IT1242014B - Procedimento per il trattamento di fette di silicio per ottenere in esse profili di precipitazione controllati per la produzione di componenti elettronici. - Google Patents

Procedimento per il trattamento di fette di silicio per ottenere in esse profili di precipitazione controllati per la produzione di componenti elettronici.

Info

Publication number
IT1242014B
IT1242014B IT48481A IT4848190A IT1242014B IT 1242014 B IT1242014 B IT 1242014B IT 48481 A IT48481 A IT 48481A IT 4848190 A IT4848190 A IT 4848190A IT 1242014 B IT1242014 B IT 1242014B
Authority
IT
Italy
Prior art keywords
face
pct
procedure
treatment
production
Prior art date
Application number
IT48481A
Other languages
English (en)
Other versions
IT9048481A0 (it
IT9048481A1 (it
Inventor
Robert Falster
Giancarlo Ferrero
Graham Fisher
Massimiliano Olmo
Marco Pagani
Original Assignee
Memc Electronic Materials
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Memc Electronic Materials filed Critical Memc Electronic Materials
Publication of IT9048481A0 publication Critical patent/IT9048481A0/it
Priority to IT48481A priority Critical patent/IT1242014B/it
Priority to ZA918831A priority patent/ZA918831B/xx
Priority to IL9997991A priority patent/IL99979A/en
Priority to MYPI91002071A priority patent/MY110258A/en
Priority to CZ93849A priority patent/CZ84993A3/cs
Priority to SK47093A priority patent/SK47093A3/sk
Priority to AT92900331T priority patent/ATE176084T1/de
Priority to DE69130802T priority patent/DE69130802T2/de
Priority to JP50121392A priority patent/JP3412636B2/ja
Priority to SG1996006807A priority patent/SG64901A1/en
Priority to FI932024A priority patent/FI932024A7/fi
Priority to AU90335/91A priority patent/AU9033591A/en
Priority to PCT/IT1991/000095 priority patent/WO1992009101A1/en
Priority to US08/064,013 priority patent/US5403406A/en
Priority to EP92900331A priority patent/EP0557415B1/en
Priority to KR1019930701407A priority patent/KR100247464B1/ko
Priority to TW080109066A priority patent/TW205110B/zh
Publication of IT9048481A1 publication Critical patent/IT9048481A1/it
Application granted granted Critical
Publication of IT1242014B publication Critical patent/IT1242014B/it
Priority to JP2002373700A priority patent/JP2003243402A/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Formation Of Insulating Films (AREA)
  • Silicon Compounds (AREA)
  • Surgical Instruments (AREA)
  • Safety Valves (AREA)
  • Vessels, Lead-In Wires, Accessory Apparatuses For Cathode-Ray Tubes (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
IT48481A 1990-11-15 1990-11-15 Procedimento per il trattamento di fette di silicio per ottenere in esse profili di precipitazione controllati per la produzione di componenti elettronici. IT1242014B (it)

Priority Applications (18)

Application Number Priority Date Filing Date Title
IT48481A IT1242014B (it) 1990-11-15 1990-11-15 Procedimento per il trattamento di fette di silicio per ottenere in esse profili di precipitazione controllati per la produzione di componenti elettronici.
ZA918831A ZA918831B (en) 1990-11-15 1991-11-07 A process for the treatment of silicon wafers in order to achieve controlled precipitation profiles therein adapted for manufacturing electronic components
IL9997991A IL99979A (en) 1990-11-15 1991-11-07 Treatment of silicon wafers in order to achieve controlled precipitation profiles therein adapted for manufacturing electronic components
MYPI91002071A MY110258A (en) 1990-11-15 1991-11-08 A process for the treatment of silicon wafers in order to achieve controlled precipitation profiles therein adapted for manufacturing electronic components
JP50121392A JP3412636B2 (ja) 1990-11-15 1991-11-11 珪素ウェーハの処理方法
US08/064,013 US5403406A (en) 1990-11-15 1991-11-11 Silicon wafers having controlled precipitation distribution
AT92900331T ATE176084T1 (de) 1990-11-15 1991-11-11 Verfahren zum erreichen kontrollierter ablagerungsprofile in siliziumwufern
DE69130802T DE69130802T2 (de) 1990-11-15 1991-11-11 Verfahren zum erreichen kontrollierter ablagerungsprofile in siliziumwufern
CZ93849A CZ84993A3 (en) 1990-11-15 1991-11-11 Process of working silicon lamellae of chips for achieving controlled sections of precipitation density
SG1996006807A SG64901A1 (en) 1990-11-15 1991-11-11 Process for achieving controlled precipitation profiles in silicon wafers
FI932024A FI932024A7 (fi) 1990-11-15 1991-11-11 Menetelmä kontrolloitujen erkautumisprofiilien aikaansaamiseksi piikie kkoihin
AU90335/91A AU9033591A (en) 1990-11-15 1991-11-11 Process for achieving controlled precipitation profiles in silicon wafers
PCT/IT1991/000095 WO1992009101A1 (en) 1990-11-15 1991-11-11 Process for achieving controlled precipitation profiles in silicon wafers
SK47093A SK47093A3 (en) 1990-11-15 1991-11-11 Process for achieving controlled precipitation profiles in silicon wafers
EP92900331A EP0557415B1 (en) 1990-11-15 1991-11-11 Process for achieving controlled precipitation profiles in silicon wafers
KR1019930701407A KR100247464B1 (ko) 1990-11-15 1991-11-11 실리콘 웨이퍼의 조절된 침전 프로파일 제공방법
TW080109066A TW205110B (it) 1990-11-15 1991-11-19
JP2002373700A JP2003243402A (ja) 1990-11-15 2002-12-25 珪素ウェーハ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT48481A IT1242014B (it) 1990-11-15 1990-11-15 Procedimento per il trattamento di fette di silicio per ottenere in esse profili di precipitazione controllati per la produzione di componenti elettronici.

Publications (3)

Publication Number Publication Date
IT9048481A0 IT9048481A0 (it) 1990-11-15
IT9048481A1 IT9048481A1 (it) 1992-05-15
IT1242014B true IT1242014B (it) 1994-02-02

Family

ID=11266818

Family Applications (1)

Application Number Title Priority Date Filing Date
IT48481A IT1242014B (it) 1990-11-15 1990-11-15 Procedimento per il trattamento di fette di silicio per ottenere in esse profili di precipitazione controllati per la produzione di componenti elettronici.

Country Status (17)

Country Link
US (1) US5403406A (it)
EP (1) EP0557415B1 (it)
JP (2) JP3412636B2 (it)
KR (1) KR100247464B1 (it)
AT (1) ATE176084T1 (it)
AU (1) AU9033591A (it)
CZ (1) CZ84993A3 (it)
DE (1) DE69130802T2 (it)
FI (1) FI932024A7 (it)
IL (1) IL99979A (it)
IT (1) IT1242014B (it)
MY (1) MY110258A (it)
SG (1) SG64901A1 (it)
SK (1) SK47093A3 (it)
TW (1) TW205110B (it)
WO (1) WO1992009101A1 (it)
ZA (1) ZA918831B (it)

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US5788763A (en) * 1995-03-09 1998-08-04 Toshiba Ceramics Co., Ltd. Manufacturing method of a silicon wafer having a controlled BMD concentration
US5593494A (en) * 1995-03-14 1997-01-14 Memc Electronic Materials, Inc. Precision controlled precipitation of oxygen in silicon
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US6485807B1 (en) 1997-02-13 2002-11-26 Samsung Electronics Co., Ltd. Silicon wafers having controlled distribution of defects, and methods of preparing the same
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US6828690B1 (en) * 1998-08-05 2004-12-07 Memc Electronic Materials, Inc. Non-uniform minority carrier lifetime distributions in high performance silicon power devices
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US6336968B1 (en) 1998-09-02 2002-01-08 Memc Electronic Materials, Inc. Non-oxygen precipitating czochralski silicon wafers
CN1181522C (zh) 1998-09-02 2004-12-22 Memc电子材料有限公司 具有改进的内部收气的热退火单晶硅片及其热处理工艺
WO2000022198A1 (en) 1998-10-14 2000-04-20 Memc Electronic Materials, Inc. Thermally annealed, low defect density single crystal silicon
JP2000154070A (ja) * 1998-11-16 2000-06-06 Suminoe Textile Co Ltd セラミックス三次元構造体及びその製造方法
US6284384B1 (en) * 1998-12-09 2001-09-04 Memc Electronic Materials, Inc. Epitaxial silicon wafer with intrinsic gettering
DE19924649B4 (de) * 1999-05-28 2004-08-05 Siltronic Ag Halbleiterscheiben mit Kristallgitter-Defekten und Verfahren zur Herstellung derselben
US20030051656A1 (en) 1999-06-14 2003-03-20 Charles Chiun-Chieh Yang Method for the preparation of an epitaxial silicon wafer with intrinsic gettering
US6635587B1 (en) 1999-09-23 2003-10-21 Memc Electronic Materials, Inc. Method for producing czochralski silicon free of agglomerated self-interstitial defects
KR100378184B1 (ko) * 1999-11-13 2003-03-29 삼성전자주식회사 제어된 결함 분포를 갖는 실리콘 웨이퍼, 그의 제조공정및 단결정 실리콘 잉곳의 제조를 위한 초크랄스키 풀러
JP2001308101A (ja) * 2000-04-19 2001-11-02 Mitsubishi Materials Silicon Corp シリコンウェーハの熱処理方法及びシリコンウェーハ
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US6339016B1 (en) 2000-06-30 2002-01-15 Memc Electronic Materials, Inc. Method and apparatus for forming an epitaxial silicon wafer with a denuded zone
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US6599815B1 (en) 2000-06-30 2003-07-29 Memc Electronic Materials, Inc. Method and apparatus for forming a silicon wafer with a denuded zone
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Also Published As

Publication number Publication date
TW205110B (it) 1993-05-01
EP0557415A1 (en) 1993-09-01
SK47093A3 (en) 1993-08-11
FI932024A0 (fi) 1993-05-05
FI932024L (fi) 1993-06-29
MY110258A (en) 1998-03-31
JPH06504878A (ja) 1994-06-02
DE69130802D1 (de) 1999-03-04
FI932024A7 (fi) 1993-06-29
JP3412636B2 (ja) 2003-06-03
AU9033591A (en) 1992-06-11
US5403406A (en) 1995-04-04
IT9048481A0 (it) 1990-11-15
IL99979A (en) 1995-07-31
ATE176084T1 (de) 1999-02-15
IL99979A0 (en) 1992-08-18
CZ84993A3 (en) 1993-11-17
KR100247464B1 (ko) 2000-03-15
DE69130802T2 (de) 1999-08-19
ZA918831B (en) 1992-08-26
IT9048481A1 (it) 1992-05-15
SG64901A1 (en) 1999-05-25
EP0557415B1 (en) 1999-01-20
WO1992009101A1 (en) 1992-05-29
JP2003243402A (ja) 2003-08-29

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Effective date: 19971129