JPH06504878A - 珪素ウェーハ中の析出状態を制御する方法 - Google Patents
珪素ウェーハ中の析出状態を制御する方法Info
- Publication number
- JPH06504878A JPH06504878A JP4501213A JP50121392A JPH06504878A JP H06504878 A JPH06504878 A JP H06504878A JP 4501213 A JP4501213 A JP 4501213A JP 50121392 A JP50121392 A JP 50121392A JP H06504878 A JPH06504878 A JP H06504878A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- heat treatment
- silicon
- temperature
- wafers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
- H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Formation Of Insulating Films (AREA)
- Surgical Instruments (AREA)
- Safety Valves (AREA)
- Vessels, Lead-In Wires, Accessory Apparatuses For Cathode-Ray Tubes (AREA)
- Silicon Compounds (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (12)
- 1.珪素ウェーハ内部に析出物密度の制御された分布状態を達成するための珪素 ウェーハ処理方法において、次の操作、 (a)ウェーハを950℃〜1150℃、特に約1100℃の温度で約15分間 予備的熱処理にかけ、 (b)標準的化学的腐食(エッチング)処理の後、互いに熱的に密接に接触した 状態に組み合わせて対にしたウェーハを1200℃〜1275℃の温度で数十秒 間速いアニーリング熱処理にかけ、 (c)前記ウェーハを更に900℃〜1000℃の温度で長い熱処理にかけ、そ して最後に、 (d)前記ウェーハを炉から取り出し、前記速いアニーリング処理中互いに密接 に接触していた表面を表面研磨にかける、 操作からなることを特徴とする珪素ウェーハ処理方法。
- 2.予備的熱処理が約1100℃で行われ、「欠陥」密度を更に減少させる機能 を果たし、均質な出発状態を確立する請求項1に記載の珪素ウェーハの処理方法 。
- 3.速いアニーリング熱処理が、対に組合せたウェーハを10〜40秒の時間の 熱的パルスにかけ、析出物前駆物質の発生を行わせることからなる請求項1に記 載の珪素ウェーハの処理方法。
- 4.更に長い熱処理が一又は二段階で行われる請求項1に記載の珪素ウェーハの 処理方法。
- 5.更に長い熱処理が二段階で行われ、特に第一段階では900℃の温度で、第 二段階で1000℃の温度で、夫々4時間及び16時間の時間行われる請求項4 に記載の珪素ウェーハ処理方法。
- 6.ウェーハの密接な熱的接触組合せが、それらの表面の間の簡単な物理的熱的 接触で実現される請求項1に記載の珪素ウェーハ処理方法。
- 7.ウェーハの密接な熱的接触組合せが、それらの表面の間の原子的待合(ウェ ーハ結合)を実現する緊密な結合方法により実現される請求項1に記載の珪素ウ ェーハ処理方法。
- 8.珪素ウェーハ内部に析出物密度の制御された分布状態を達成するための珪素 ウェーハの処理方法において、次の操作、 (a)ウェーハを950℃〜1150℃の温度で約15分間予備的熱処理にかけ 、 (b)標準的化学的腐食処理の後、ウェーハを不活性ガス雰囲気中で、表面を遮 蔽して、1200℃〜1275℃の温度で数十秒間速いアニーリング熱処理にか け、(c)前記ウェーハを更に900℃〜1000℃の温度で長い熱処理にかけ 、そして最後に、 (d)前記ウェーハを炉から取り出し、前記速いアニーリング処理中遮蔽されて いた表面を表面研磨にかける、操作からなることを特徴とする珪素ウェーハ処理 方法。
- 9.不活性雰囲気が窒素であることを特徴とする請求項8に記載の方法。
- 10.遮蔽が別の珪素スライスを用いて実現される請求項8及び9に記載の方法 。
- 11.遮蔽が石英板を用いて実現される請求項8及び9に記載の方法。
- 12.窒素雰囲気に対するウェーハの一方の面の遮蔽が、その面上にアルゴン雰 囲気を適用することにより実現されることを特徴とする請求項8及び9に記載の 方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT48481A/90 | 1990-11-15 | ||
IT48481A IT1242014B (it) | 1990-11-15 | 1990-11-15 | Procedimento per il trattamento di fette di silicio per ottenere in esse profili di precipitazione controllati per la produzione di componenti elettronici. |
PCT/IT1991/000095 WO1992009101A1 (en) | 1990-11-15 | 1991-11-11 | Process for achieving controlled precipitation profiles in silicon wafers |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2002373700A Division JP2003243402A (ja) | 1990-11-15 | 2002-12-25 | 珪素ウェーハ |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH06504878A true JPH06504878A (ja) | 1994-06-02 |
JP3412636B2 JP3412636B2 (ja) | 2003-06-03 |
Family
ID=11266818
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50121392A Expired - Lifetime JP3412636B2 (ja) | 1990-11-15 | 1991-11-11 | 珪素ウェーハの処理方法 |
JP2002373700A Pending JP2003243402A (ja) | 1990-11-15 | 2002-12-25 | 珪素ウェーハ |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2002373700A Pending JP2003243402A (ja) | 1990-11-15 | 2002-12-25 | 珪素ウェーハ |
Country Status (17)
Country | Link |
---|---|
US (1) | US5403406A (ja) |
EP (1) | EP0557415B1 (ja) |
JP (2) | JP3412636B2 (ja) |
KR (1) | KR100247464B1 (ja) |
AT (1) | ATE176084T1 (ja) |
AU (1) | AU9033591A (ja) |
CZ (1) | CZ84993A3 (ja) |
DE (1) | DE69130802T2 (ja) |
FI (1) | FI932024A (ja) |
IL (1) | IL99979A (ja) |
IT (1) | IT1242014B (ja) |
MY (1) | MY110258A (ja) |
SG (1) | SG64901A1 (ja) |
SK (1) | SK47093A3 (ja) |
TW (1) | TW205110B (ja) |
WO (1) | WO1992009101A1 (ja) |
ZA (1) | ZA918831B (ja) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0574782A (ja) * | 1991-09-10 | 1993-03-26 | Mitsubishi Materials Corp | シリコン基板の製造方法 |
JPH11150119A (ja) * | 1997-11-14 | 1999-06-02 | Sumitomo Sitix Corp | シリコン半導体基板の熱処理方法とその装置 |
JP2001308101A (ja) * | 2000-04-19 | 2001-11-02 | Mitsubishi Materials Silicon Corp | シリコンウェーハの熱処理方法及びシリコンウェーハ |
JP2002110683A (ja) * | 2000-09-26 | 2002-04-12 | Sumitomo Metal Ind Ltd | シリコン半導体基板の熱処理方法 |
JP2002134515A (ja) * | 2000-10-25 | 2002-05-10 | Shin Etsu Handotai Co Ltd | シリコンウェーハの製造方法およびシリコンウェーハ |
JP2009016864A (ja) * | 1999-11-13 | 2009-01-22 | Samsung Electronics Co Ltd | シリコンウェーハの製造方法 |
JP2009147357A (ja) * | 1998-09-02 | 2009-07-02 | Memc Electron Materials Inc | 欠陥密度が低い単結晶シリコンから得られるシリコン・オン・インシュレーター構造体 |
JP2009177194A (ja) * | 2009-03-19 | 2009-08-06 | Sumco Corp | シリコンウェーハの製造方法、シリコンウェーハ |
Families Citing this family (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0684925A (ja) * | 1992-07-17 | 1994-03-25 | Toshiba Corp | 半導体基板およびその処理方法 |
JP2874834B2 (ja) * | 1994-07-29 | 1999-03-24 | 三菱マテリアル株式会社 | シリコンウェーハのイントリンシックゲッタリング処理法 |
US5788763A (en) * | 1995-03-09 | 1998-08-04 | Toshiba Ceramics Co., Ltd. | Manufacturing method of a silicon wafer having a controlled BMD concentration |
US5593494A (en) * | 1995-03-14 | 1997-01-14 | Memc Electronic Materials, Inc. | Precision controlled precipitation of oxygen in silicon |
US6503594B2 (en) | 1997-02-13 | 2003-01-07 | Samsung Electronics Co., Ltd. | Silicon wafers having controlled distribution of defects and slip |
US6485807B1 (en) | 1997-02-13 | 2002-11-26 | Samsung Electronics Co., Ltd. | Silicon wafers having controlled distribution of defects, and methods of preparing the same |
SG64470A1 (en) | 1997-02-13 | 1999-04-27 | Samsung Electronics Co Ltd | Methods of manufacturing monocrystalline silicon ingots and wafers by controlling pull rate profiles in a hot zone furnace and ingots and wafers manufactured thereby |
US5994761A (en) | 1997-02-26 | 1999-11-30 | Memc Electronic Materials Spa | Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor |
MY137778A (en) | 1997-04-09 | 2009-03-31 | Memc Electronic Materials | Low defect density, ideal oxygen precipitating silicon |
TW429478B (en) * | 1997-08-29 | 2001-04-11 | Toshiba Corp | Semiconductor device and method for manufacturing the same |
US5882989A (en) * | 1997-09-22 | 1999-03-16 | Memc Electronic Materials, Inc. | Process for the preparation of silicon wafers having a controlled distribution of oxygen precipitate nucleation centers |
US6340392B1 (en) | 1997-10-24 | 2002-01-22 | Samsung Electronics Co., Ltd. | Pulling methods for manufacturing monocrystalline silicone ingots by controlling temperature at the center and edge of an ingot-melt interface |
JP3746153B2 (ja) * | 1998-06-09 | 2006-02-15 | 信越半導体株式会社 | シリコンウエーハの熱処理方法 |
US6828690B1 (en) * | 1998-08-05 | 2004-12-07 | Memc Electronic Materials, Inc. | Non-uniform minority carrier lifetime distributions in high performance silicon power devices |
CN1155064C (zh) | 1998-09-02 | 2004-06-23 | Memc电子材料有限公司 | 制备理想析氧硅晶片的工艺 |
US6361619B1 (en) | 1998-09-02 | 2002-03-26 | Memc Electronic Materials, Inc. | Thermally annealed wafers having improved internal gettering |
US6336968B1 (en) | 1998-09-02 | 2002-01-08 | Memc Electronic Materials, Inc. | Non-oxygen precipitating czochralski silicon wafers |
EP1125008B1 (en) | 1998-10-14 | 2003-06-18 | MEMC Electronic Materials, Inc. | Thermally annealed, low defect density single crystal silicon |
JP2000154070A (ja) * | 1998-11-16 | 2000-06-06 | Suminoe Textile Co Ltd | セラミックス三次元構造体及びその製造方法 |
US6284384B1 (en) * | 1998-12-09 | 2001-09-04 | Memc Electronic Materials, Inc. | Epitaxial silicon wafer with intrinsic gettering |
DE19924649B4 (de) * | 1999-05-28 | 2004-08-05 | Siltronic Ag | Halbleiterscheiben mit Kristallgitter-Defekten und Verfahren zur Herstellung derselben |
US20030051656A1 (en) | 1999-06-14 | 2003-03-20 | Charles Chiun-Chieh Yang | Method for the preparation of an epitaxial silicon wafer with intrinsic gettering |
US6635587B1 (en) | 1999-09-23 | 2003-10-21 | Memc Electronic Materials, Inc. | Method for producing czochralski silicon free of agglomerated self-interstitial defects |
DE10024710A1 (de) | 2000-05-18 | 2001-12-20 | Steag Rtp Systems Gmbh | Einstellung von Defektprofilen in Kristallen oder kristallähnlichen Strukturen |
US6599815B1 (en) | 2000-06-30 | 2003-07-29 | Memc Electronic Materials, Inc. | Method and apparatus for forming a silicon wafer with a denuded zone |
KR20030021185A (ko) * | 2000-06-30 | 2003-03-12 | 엠이엠씨 일렉트로닉 머티리얼즈 인코포레이티드 | 디누디드 존을 갖는 실리콘 웨이퍼를 형성하는 방법 및 장치 |
US6339016B1 (en) | 2000-06-30 | 2002-01-15 | Memc Electronic Materials, Inc. | Method and apparatus for forming an epitaxial silicon wafer with a denuded zone |
JP2004537161A (ja) * | 2001-04-11 | 2004-12-09 | エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド | 高抵抗率czシリコンにおけるサーマルドナー生成の制御 |
TW541581B (en) * | 2001-04-20 | 2003-07-11 | Memc Electronic Materials | Method for the preparation of a semiconductor substrate with a non-uniform distribution of stabilized oxygen precipitates |
US7883628B2 (en) * | 2001-07-04 | 2011-02-08 | S.O.I.Tec Silicon On Insulator Technologies | Method of reducing the surface roughness of a semiconductor wafer |
FR2827078B1 (fr) * | 2001-07-04 | 2005-02-04 | Soitec Silicon On Insulator | Procede de diminution de rugosite de surface |
US7749910B2 (en) * | 2001-07-04 | 2010-07-06 | S.O.I.Tec Silicon On Insulator Technologies | Method of reducing the surface roughness of a semiconductor wafer |
JP4567251B2 (ja) * | 2001-09-14 | 2010-10-20 | シルトロニック・ジャパン株式会社 | シリコン半導体基板およびその製造方法 |
US6955718B2 (en) * | 2003-07-08 | 2005-10-18 | Memc Electronic Materials, Inc. | Process for preparing a stabilized ideal oxygen precipitating silicon wafer |
JP2005051040A (ja) * | 2003-07-29 | 2005-02-24 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法及び半導体基板 |
KR100531552B1 (ko) * | 2003-09-05 | 2005-11-28 | 주식회사 하이닉스반도체 | 실리콘 웨이퍼 및 그 제조방법 |
US7485928B2 (en) * | 2005-11-09 | 2009-02-03 | Memc Electronic Materials, Inc. | Arsenic and phosphorus doped silicon wafer substrates having intrinsic gettering |
US20090004458A1 (en) * | 2007-06-29 | 2009-01-01 | Memc Electronic Materials, Inc. | Diffusion Control in Heavily Doped Substrates |
US20090004426A1 (en) * | 2007-06-29 | 2009-01-01 | Memc Electronic Materials, Inc. | Suppression of Oxygen Precipitation in Heavily Doped Single Crystal Silicon Substrates |
WO2018125565A1 (en) * | 2016-12-28 | 2018-07-05 | Sunedison Semiconductor Limited | Method of treating silicon wafers to have intrinsic gettering and gate oxide integrity yield |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS5680139A (en) * | 1979-12-05 | 1981-07-01 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Manufacture of semiconductor device |
JPS56158431A (en) * | 1980-05-13 | 1981-12-07 | Meidensha Electric Mfg Co Ltd | Forming of oxidized film of semiconductor element for electric power |
JPS5787119A (en) * | 1980-11-19 | 1982-05-31 | Toshiba Corp | Manufacture of semiconductor device |
US4430995A (en) * | 1981-05-29 | 1984-02-14 | Hilton Joseph R | Power assisted air-purifying respirators |
JPS57197827A (en) * | 1981-05-29 | 1982-12-04 | Hitachi Ltd | Semiconductor substrate |
US4548654A (en) * | 1983-06-03 | 1985-10-22 | Motorola, Inc. | Surface denuding of silicon wafer |
JPS60133734A (ja) * | 1983-12-21 | 1985-07-16 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
JPH0697664B2 (ja) * | 1984-05-11 | 1994-11-30 | 住友電気工業株式会社 | 化合物半導体のアニ−ル法 |
US4622082A (en) * | 1984-06-25 | 1986-11-11 | Monsanto Company | Conditioned semiconductor substrates |
US4868133A (en) * | 1988-02-11 | 1989-09-19 | Dns Electronic Materials, Inc. | Semiconductor wafer fabrication with improved control of internal gettering sites using RTA |
US4851358A (en) * | 1988-02-11 | 1989-07-25 | Dns Electronic Materials, Inc. | Semiconductor wafer fabrication with improved control of internal gettering sites using rapid thermal annealing |
US5228927A (en) * | 1988-03-25 | 1993-07-20 | Shin-Etsu Handotai Company Limited | Method for heat-treating gallium arsenide monocrystals |
US5096839A (en) * | 1989-09-20 | 1992-03-17 | Kabushiki Kaisha Toshiba | Silicon wafer with defined interstitial oxygen concentration |
-
1990
- 1990-11-15 IT IT48481A patent/IT1242014B/it active IP Right Grant
-
1991
- 1991-11-07 ZA ZA918831A patent/ZA918831B/xx unknown
- 1991-11-07 IL IL9997991A patent/IL99979A/en not_active IP Right Cessation
- 1991-11-08 MY MYPI91002071A patent/MY110258A/en unknown
- 1991-11-11 DE DE69130802T patent/DE69130802T2/de not_active Expired - Lifetime
- 1991-11-11 JP JP50121392A patent/JP3412636B2/ja not_active Expired - Lifetime
- 1991-11-11 WO PCT/IT1991/000095 patent/WO1992009101A1/en active IP Right Grant
- 1991-11-11 SG SG1996006807A patent/SG64901A1/en unknown
- 1991-11-11 AU AU90335/91A patent/AU9033591A/en not_active Abandoned
- 1991-11-11 US US08/064,013 patent/US5403406A/en not_active Expired - Lifetime
- 1991-11-11 KR KR1019930701407A patent/KR100247464B1/ko not_active IP Right Cessation
- 1991-11-11 AT AT92900331T patent/ATE176084T1/de not_active IP Right Cessation
- 1991-11-11 EP EP92900331A patent/EP0557415B1/en not_active Expired - Lifetime
- 1991-11-11 CZ CZ93849A patent/CZ84993A3/cs unknown
- 1991-11-11 SK SK47093A patent/SK47093A3/sk unknown
- 1991-11-19 TW TW080109066A patent/TW205110B/zh not_active IP Right Cessation
-
1993
- 1993-05-05 FI FI932024A patent/FI932024A/fi unknown
-
2002
- 2002-12-25 JP JP2002373700A patent/JP2003243402A/ja active Pending
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0574782A (ja) * | 1991-09-10 | 1993-03-26 | Mitsubishi Materials Corp | シリコン基板の製造方法 |
JPH11150119A (ja) * | 1997-11-14 | 1999-06-02 | Sumitomo Sitix Corp | シリコン半導体基板の熱処理方法とその装置 |
JP2009147357A (ja) * | 1998-09-02 | 2009-07-02 | Memc Electron Materials Inc | 欠陥密度が低い単結晶シリコンから得られるシリコン・オン・インシュレーター構造体 |
JP2009016864A (ja) * | 1999-11-13 | 2009-01-22 | Samsung Electronics Co Ltd | シリコンウェーハの製造方法 |
JP2009021623A (ja) * | 1999-11-13 | 2009-01-29 | Samsung Electronics Co Ltd | シリコンウェーハの製造方法 |
JP2001308101A (ja) * | 2000-04-19 | 2001-11-02 | Mitsubishi Materials Silicon Corp | シリコンウェーハの熱処理方法及びシリコンウェーハ |
JP2002110683A (ja) * | 2000-09-26 | 2002-04-12 | Sumitomo Metal Ind Ltd | シリコン半導体基板の熱処理方法 |
JP2002134515A (ja) * | 2000-10-25 | 2002-05-10 | Shin Etsu Handotai Co Ltd | シリコンウェーハの製造方法およびシリコンウェーハ |
US7078357B2 (en) | 2000-10-25 | 2006-07-18 | Shin-Etsu Handotai Co., Ltd. | Method for manufacturing silicon wafer and silicon wafer |
JP2009177194A (ja) * | 2009-03-19 | 2009-08-06 | Sumco Corp | シリコンウェーハの製造方法、シリコンウェーハ |
Also Published As
Publication number | Publication date |
---|---|
MY110258A (en) | 1998-03-31 |
JP3412636B2 (ja) | 2003-06-03 |
US5403406A (en) | 1995-04-04 |
SK47093A3 (en) | 1993-08-11 |
FI932024A0 (fi) | 1993-05-05 |
IT9048481A0 (it) | 1990-11-15 |
SG64901A1 (en) | 1999-05-25 |
IT9048481A1 (it) | 1992-05-15 |
CZ84993A3 (en) | 1993-11-17 |
JP2003243402A (ja) | 2003-08-29 |
TW205110B (ja) | 1993-05-01 |
ATE176084T1 (de) | 1999-02-15 |
KR100247464B1 (ko) | 2000-03-15 |
DE69130802T2 (de) | 1999-08-19 |
IT1242014B (it) | 1994-02-02 |
WO1992009101A1 (en) | 1992-05-29 |
IL99979A0 (en) | 1992-08-18 |
ZA918831B (en) | 1992-08-26 |
DE69130802D1 (de) | 1999-03-04 |
FI932024A (fi) | 1993-06-29 |
EP0557415A1 (en) | 1993-09-01 |
EP0557415B1 (en) | 1999-01-20 |
IL99979A (en) | 1995-07-31 |
AU9033591A (en) | 1992-06-11 |
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