SK47093A3 - Process for achieving controlled precipitation profiles in silicon wafers - Google Patents
Process for achieving controlled precipitation profiles in silicon wafers Download PDFInfo
- Publication number
- SK47093A3 SK47093A3 SK47093A SK47093A SK47093A3 SK 47093 A3 SK47093 A3 SK 47093A3 SK 47093 A SK47093 A SK 47093A SK 47093 A SK47093 A SK 47093A SK 47093 A3 SK47093 A3 SK 47093A3
- Authority
- SK
- Slovakia
- Prior art keywords
- temperature
- quot
- carried out
- heat treatment
- silicon wafer
- Prior art date
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 28
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 28
- 239000010703 silicon Substances 0.000 title claims abstract description 28
- 238000000034 method Methods 0.000 title claims description 25
- 235000012431 wafers Nutrition 0.000 title claims description 19
- 238000001556 precipitation Methods 0.000 title description 4
- 230000007547 defect Effects 0.000 claims description 19
- 238000010438 heat treatment Methods 0.000 claims description 16
- 238000000137 annealing Methods 0.000 claims description 9
- 239000012298 atmosphere Substances 0.000 claims description 5
- 230000007797 corrosion Effects 0.000 claims description 4
- 238000005260 corrosion Methods 0.000 claims description 4
- 241000207836 Olea <angiosperm> Species 0.000 claims description 3
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 2
- 230000001105 regulatory effect Effects 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 238000001179 sorption measurement Methods 0.000 claims description 2
- 238000004904 shortening Methods 0.000 claims 2
- NENBAISIHCWPKP-UHFFFAOYSA-N Clofenamide Chemical compound NS(=O)(=O)C1=CC=C(Cl)C(S(N)(=O)=O)=C1 NENBAISIHCWPKP-UHFFFAOYSA-N 0.000 claims 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims 1
- 229910052785 arsenic Inorganic materials 0.000 claims 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 1
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 230000012447 hatching Effects 0.000 claims 1
- 239000011261 inert gas Substances 0.000 claims 1
- 238000003672 processing method Methods 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 18
- 229910052760 oxygen Inorganic materials 0.000 abstract description 18
- 239000001301 oxygen Substances 0.000 abstract description 18
- 239000002244 precipitate Substances 0.000 abstract description 8
- 230000006911 nucleation Effects 0.000 abstract description 6
- 238000010899 nucleation Methods 0.000 abstract description 6
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 238000009828 non-uniform distribution Methods 0.000 abstract 1
- 239000002243 precursor Substances 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000001816 cooling Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000006213 oxygenation reaction Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 241000242759 Actiniaria Species 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000002939 deleterious effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000005242 forging Methods 0.000 description 1
- 230000030279 gene silencing Effects 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002773 nucleotide Substances 0.000 description 1
- 125000003729 nucleotide group Chemical group 0.000 description 1
- 230000003534 oscillatory effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000011200 topical administration Methods 0.000 description 1
- 241001430294 unidentified retrovirus Species 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
- H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Formation Of Insulating Films (AREA)
- Vessels, Lead-In Wires, Accessory Apparatuses For Cathode-Ray Tubes (AREA)
- Surgical Instruments (AREA)
- Safety Valves (AREA)
- Silicon Compounds (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT48481A IT1242014B (it) | 1990-11-15 | 1990-11-15 | Procedimento per il trattamento di fette di silicio per ottenere in esse profili di precipitazione controllati per la produzione di componenti elettronici. |
| PCT/IT1991/000095 WO1992009101A1 (en) | 1990-11-15 | 1991-11-11 | Process for achieving controlled precipitation profiles in silicon wafers |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SK47093A3 true SK47093A3 (en) | 1993-08-11 |
Family
ID=11266818
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SK47093A SK47093A3 (en) | 1990-11-15 | 1991-11-11 | Process for achieving controlled precipitation profiles in silicon wafers |
Country Status (17)
| Country | Link |
|---|---|
| US (1) | US5403406A (ja) |
| EP (1) | EP0557415B1 (ja) |
| JP (2) | JP3412636B2 (ja) |
| KR (1) | KR100247464B1 (ja) |
| AT (1) | ATE176084T1 (ja) |
| AU (1) | AU9033591A (ja) |
| CZ (1) | CZ84993A3 (ja) |
| DE (1) | DE69130802T2 (ja) |
| FI (1) | FI932024A (ja) |
| IL (1) | IL99979A (ja) |
| IT (1) | IT1242014B (ja) |
| MY (1) | MY110258A (ja) |
| SG (1) | SG64901A1 (ja) |
| SK (1) | SK47093A3 (ja) |
| TW (1) | TW205110B (ja) |
| WO (1) | WO1992009101A1 (ja) |
| ZA (1) | ZA918831B (ja) |
Families Citing this family (48)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0574782A (ja) * | 1991-09-10 | 1993-03-26 | Mitsubishi Materials Corp | シリコン基板の製造方法 |
| JPH0684925A (ja) * | 1992-07-17 | 1994-03-25 | Toshiba Corp | 半導体基板およびその処理方法 |
| JP2874834B2 (ja) * | 1994-07-29 | 1999-03-24 | 三菱マテリアル株式会社 | シリコンウェーハのイントリンシックゲッタリング処理法 |
| US5788763A (en) * | 1995-03-09 | 1998-08-04 | Toshiba Ceramics Co., Ltd. | Manufacturing method of a silicon wafer having a controlled BMD concentration |
| US5593494A (en) * | 1995-03-14 | 1997-01-14 | Memc Electronic Materials, Inc. | Precision controlled precipitation of oxygen in silicon |
| US6485807B1 (en) | 1997-02-13 | 2002-11-26 | Samsung Electronics Co., Ltd. | Silicon wafers having controlled distribution of defects, and methods of preparing the same |
| SG64470A1 (en) | 1997-02-13 | 1999-04-27 | Samsung Electronics Co Ltd | Methods of manufacturing monocrystalline silicon ingots and wafers by controlling pull rate profiles in a hot zone furnace and ingots and wafers manufactured thereby |
| US6503594B2 (en) | 1997-02-13 | 2003-01-07 | Samsung Electronics Co., Ltd. | Silicon wafers having controlled distribution of defects and slip |
| US5994761A (en) * | 1997-02-26 | 1999-11-30 | Memc Electronic Materials Spa | Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor |
| DE69841714D1 (de) * | 1997-04-09 | 2010-07-22 | Memc Electronic Materials | Silicium mit niedriger Fehlerdichte und idealem Sauerstoffniederschlag |
| TW429478B (en) * | 1997-08-29 | 2001-04-11 | Toshiba Corp | Semiconductor device and method for manufacturing the same |
| US5882989A (en) * | 1997-09-22 | 1999-03-16 | Memc Electronic Materials, Inc. | Process for the preparation of silicon wafers having a controlled distribution of oxygen precipitate nucleation centers |
| US6340392B1 (en) | 1997-10-24 | 2002-01-22 | Samsung Electronics Co., Ltd. | Pulling methods for manufacturing monocrystalline silicone ingots by controlling temperature at the center and edge of an ingot-melt interface |
| JPH11150119A (ja) * | 1997-11-14 | 1999-06-02 | Sumitomo Sitix Corp | シリコン半導体基板の熱処理方法とその装置 |
| JP3746153B2 (ja) * | 1998-06-09 | 2006-02-15 | 信越半導体株式会社 | シリコンウエーハの熱処理方法 |
| US6828690B1 (en) * | 1998-08-05 | 2004-12-07 | Memc Electronic Materials, Inc. | Non-uniform minority carrier lifetime distributions in high performance silicon power devices |
| US6336968B1 (en) | 1998-09-02 | 2002-01-08 | Memc Electronic Materials, Inc. | Non-oxygen precipitating czochralski silicon wafers |
| WO2000013226A1 (en) | 1998-09-02 | 2000-03-09 | Memc Electronic Materials, Inc. | Process for preparing an ideal oxygen precipitating silicon wafer |
| DE69941196D1 (de) | 1998-09-02 | 2009-09-10 | Memc Electronic Materials | Wärmebehandelte Siliziumscheiben mit verbesserter Eigengetterung |
| EP1114454A2 (en) | 1998-09-02 | 2001-07-11 | MEMC Electronic Materials, Inc. | Silicon on insulator structure from low defect density single crystal silicon |
| EP1125008B1 (en) * | 1998-10-14 | 2003-06-18 | MEMC Electronic Materials, Inc. | Thermally annealed, low defect density single crystal silicon |
| JP2000154070A (ja) * | 1998-11-16 | 2000-06-06 | Suminoe Textile Co Ltd | セラミックス三次元構造体及びその製造方法 |
| US6284384B1 (en) | 1998-12-09 | 2001-09-04 | Memc Electronic Materials, Inc. | Epitaxial silicon wafer with intrinsic gettering |
| DE19924649B4 (de) * | 1999-05-28 | 2004-08-05 | Siltronic Ag | Halbleiterscheiben mit Kristallgitter-Defekten und Verfahren zur Herstellung derselben |
| US20030051656A1 (en) | 1999-06-14 | 2003-03-20 | Charles Chiun-Chieh Yang | Method for the preparation of an epitaxial silicon wafer with intrinsic gettering |
| US6635587B1 (en) | 1999-09-23 | 2003-10-21 | Memc Electronic Materials, Inc. | Method for producing czochralski silicon free of agglomerated self-interstitial defects |
| KR100378184B1 (ko) * | 1999-11-13 | 2003-03-29 | 삼성전자주식회사 | 제어된 결함 분포를 갖는 실리콘 웨이퍼, 그의 제조공정및 단결정 실리콘 잉곳의 제조를 위한 초크랄스키 풀러 |
| JP2001308101A (ja) * | 2000-04-19 | 2001-11-02 | Mitsubishi Materials Silicon Corp | シリコンウェーハの熱処理方法及びシリコンウェーハ |
| DE10024710A1 (de) * | 2000-05-18 | 2001-12-20 | Steag Rtp Systems Gmbh | Einstellung von Defektprofilen in Kristallen oder kristallähnlichen Strukturen |
| EP1295324A1 (en) * | 2000-06-30 | 2003-03-26 | MEMC Electronic Materials, Inc. | Method and apparatus for forming a silicon wafer with a denuded zone |
| US6599815B1 (en) | 2000-06-30 | 2003-07-29 | Memc Electronic Materials, Inc. | Method and apparatus for forming a silicon wafer with a denuded zone |
| US6339016B1 (en) | 2000-06-30 | 2002-01-15 | Memc Electronic Materials, Inc. | Method and apparatus for forming an epitaxial silicon wafer with a denuded zone |
| JP4055343B2 (ja) * | 2000-09-26 | 2008-03-05 | 株式会社Ｓｕｍｃｏ | シリコン半導体基板の熱処理方法 |
| JP4106862B2 (ja) | 2000-10-25 | 2008-06-25 | 信越半導体株式会社 | シリコンウェーハの製造方法 |
| US6897084B2 (en) * | 2001-04-11 | 2005-05-24 | Memc Electronic Materials, Inc. | Control of oxygen precipitate formation in high resistivity CZ silicon |
| WO2002086960A1 (en) * | 2001-04-20 | 2002-10-31 | Memc Electronic Materials, Inc. | Method for the preparation of a silicon wafer having stabilized oxygen precipitates |
| FR2827078B1 (fr) * | 2001-07-04 | 2005-02-04 | Soitec Silicon On Insulator | Procede de diminution de rugosite de surface |
| US7883628B2 (en) * | 2001-07-04 | 2011-02-08 | S.O.I.Tec Silicon On Insulator Technologies | Method of reducing the surface roughness of a semiconductor wafer |
| US7749910B2 (en) * | 2001-07-04 | 2010-07-06 | S.O.I.Tec Silicon On Insulator Technologies | Method of reducing the surface roughness of a semiconductor wafer |
| JP4567251B2 (ja) * | 2001-09-14 | 2010-10-20 | シルトロニック・ジャパン株式会社 | シリコン半導体基板およびその製造方法 |
| US6955718B2 (en) * | 2003-07-08 | 2005-10-18 | Memc Electronic Materials, Inc. | Process for preparing a stabilized ideal oxygen precipitating silicon wafer |
| JP2005051040A (ja) * | 2003-07-29 | 2005-02-24 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法及び半導体基板 |
| KR100531552B1 (ko) * | 2003-09-05 | 2005-11-28 | 주식회사 하이닉스반도체 | 실리콘 웨이퍼 및 그 제조방법 |
| US7485928B2 (en) * | 2005-11-09 | 2009-02-03 | Memc Electronic Materials, Inc. | Arsenic and phosphorus doped silicon wafer substrates having intrinsic gettering |
| US20090004458A1 (en) * | 2007-06-29 | 2009-01-01 | Memc Electronic Materials, Inc. | Diffusion Control in Heavily Doped Substrates |
| US20090004426A1 (en) * | 2007-06-29 | 2009-01-01 | Memc Electronic Materials, Inc. | Suppression of Oxygen Precipitation in Heavily Doped Single Crystal Silicon Substrates |
| JP2009177194A (ja) * | 2009-03-19 | 2009-08-06 | Sumco Corp | シリコンウェーハの製造方法、シリコンウェーハ |
| EP3653761B1 (en) * | 2016-12-28 | 2024-02-28 | Sunedison Semiconductor Limited | Silicon wafers with intrinsic gettering and gate oxide integrity yield |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5680139A (en) * | 1979-12-05 | 1981-07-01 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Manufacture of semiconductor device |
| JPS56158431A (en) * | 1980-05-13 | 1981-12-07 | Meidensha Electric Mfg Co Ltd | Forming of oxidized film of semiconductor element for electric power |
| JPS5787119A (en) * | 1980-11-19 | 1982-05-31 | Toshiba Corp | Manufacture of semiconductor device |
| US4430995A (en) * | 1981-05-29 | 1984-02-14 | Hilton Joseph R | Power assisted air-purifying respirators |
| JPS57197827A (en) * | 1981-05-29 | 1982-12-04 | Hitachi Ltd | Semiconductor substrate |
| US4548654A (en) * | 1983-06-03 | 1985-10-22 | Motorola, Inc. | Surface denuding of silicon wafer |
| JPS60133734A (ja) * | 1983-12-21 | 1985-07-16 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| JPH0697664B2 (ja) * | 1984-05-11 | 1994-11-30 | 住友電気工業株式会社 | 化合物半導体のアニ−ル法 |
| US4622082A (en) * | 1984-06-25 | 1986-11-11 | Monsanto Company | Conditioned semiconductor substrates |
| US4868133A (en) * | 1988-02-11 | 1989-09-19 | Dns Electronic Materials, Inc. | Semiconductor wafer fabrication with improved control of internal gettering sites using RTA |
| US4851358A (en) * | 1988-02-11 | 1989-07-25 | Dns Electronic Materials, Inc. | Semiconductor wafer fabrication with improved control of internal gettering sites using rapid thermal annealing |
| US5228927A (en) * | 1988-03-25 | 1993-07-20 | Shin-Etsu Handotai Company Limited | Method for heat-treating gallium arsenide monocrystals |
| US5096839A (en) * | 1989-09-20 | 1992-03-17 | Kabushiki Kaisha Toshiba | Silicon wafer with defined interstitial oxygen concentration |
-
1990
- 1990-11-15 IT IT48481A patent/IT1242014B/it active IP Right Grant
-
1991
- 1991-11-07 ZA ZA918831A patent/ZA918831B/xx unknown
- 1991-11-07 IL IL9997991A patent/IL99979A/en not_active IP Right Cessation
- 1991-11-08 MY MYPI91002071A patent/MY110258A/en unknown
- 1991-11-11 AU AU90335/91A patent/AU9033591A/en not_active Abandoned
- 1991-11-11 WO PCT/IT1991/000095 patent/WO1992009101A1/en active IP Right Grant
- 1991-11-11 JP JP50121392A patent/JP3412636B2/ja not_active Expired - Lifetime
- 1991-11-11 DE DE69130802T patent/DE69130802T2/de not_active Expired - Lifetime
- 1991-11-11 SK SK47093A patent/SK47093A3/sk unknown
- 1991-11-11 EP EP92900331A patent/EP0557415B1/en not_active Expired - Lifetime
- 1991-11-11 CZ CZ93849A patent/CZ84993A3/cs unknown
- 1991-11-11 SG SG1996006807A patent/SG64901A1/en unknown
- 1991-11-11 AT AT92900331T patent/ATE176084T1/de not_active IP Right Cessation
- 1991-11-11 US US08/064,013 patent/US5403406A/en not_active Expired - Lifetime
- 1991-11-11 KR KR1019930701407A patent/KR100247464B1/ko not_active IP Right Cessation
- 1991-11-19 TW TW080109066A patent/TW205110B/zh not_active IP Right Cessation
-
1993
- 1993-05-05 FI FI932024A patent/FI932024A/fi unknown
-
2002
- 2002-12-25 JP JP2002373700A patent/JP2003243402A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| FI932024A (fi) | 1993-06-29 |
| MY110258A (en) | 1998-03-31 |
| IT9048481A1 (it) | 1992-05-15 |
| JPH06504878A (ja) | 1994-06-02 |
| KR100247464B1 (ko) | 2000-03-15 |
| ATE176084T1 (de) | 1999-02-15 |
| WO1992009101A1 (en) | 1992-05-29 |
| US5403406A (en) | 1995-04-04 |
| DE69130802T2 (de) | 1999-08-19 |
| ZA918831B (en) | 1992-08-26 |
| AU9033591A (en) | 1992-06-11 |
| IT1242014B (it) | 1994-02-02 |
| TW205110B (ja) | 1993-05-01 |
| IL99979A0 (en) | 1992-08-18 |
| EP0557415B1 (en) | 1999-01-20 |
| FI932024A0 (fi) | 1993-05-05 |
| DE69130802D1 (de) | 1999-03-04 |
| CZ84993A3 (en) | 1993-11-17 |
| IT9048481A0 (it) | 1990-11-15 |
| SG64901A1 (en) | 1999-05-25 |
| JP3412636B2 (ja) | 2003-06-03 |
| IL99979A (en) | 1995-07-31 |
| JP2003243402A (ja) | 2003-08-29 |
| EP0557415A1 (en) | 1993-09-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| SK47093A3 (en) | Process for achieving controlled precipitation profiles in silicon wafers | |
| JP3144631B2 (ja) | シリコン半導体基板の熱処理方法 | |
| JPS6255697B2 (ja) | ||
| CN105900219B (zh) | 硅晶片及其制备方法 | |
| WO2016171055A1 (ja) | 銅合金材料およびその製造方法 | |
| JP2010261066A (ja) | 電子部品用チタン銅の製造方法 | |
| JP2007235153A (ja) | 高抵抗シリコンウエーハ及びその製造方法 | |
| KR100491823B1 (ko) | 산소석출물 핵형성 중심의 분포가 제어된 실리콘 웨이퍼의 제조방법 | |
| WO2002027778A1 (fr) | Procédé de traitement thermique d'une plaquette de silicium | |
| KR20020042688A (ko) | 셀프-인터스티셜 응집 결함이 없는 초크랄스키 실리콘을제조하기 위한 방법 | |
| JPH1180862A (ja) | 耐熱性に優れたリードフレーム用Ｃｕ−Ｆｅ系合金材 | |
| DE19924649B4 (de) | Halbleiterscheiben mit Kristallgitter-Defekten und Verfahren zur Herstellung derselben | |
| CN100366782C (zh) | 机械性能改善的铝-硅-合金 | |
| JP3439302B2 (ja) | ＺｎＳｅ結晶の熱処理方法 | |
| KR100685260B1 (ko) | 실리콘 웨이퍼의 열처리 방법 | |
| JP5319578B2 (ja) | 電子部品用チタン銅の製造方法 | |
| JP2001077120A (ja) | エピタキシャルシリコンウェーハの製造方法 | |
| JPH093612A (ja) | 高純度金合金の硬質化方法 | |
| JPH0714755A (ja) | シリコン半導体基板及びその製造方法 | |
| KR102104074B1 (ko) | 실리콘 웨이퍼의 제조 방법 | |
| JPH08111444A (ja) | 半導体基板用シリコンウェハの原子空孔分布評価法 | |
| JPS6338561A (ja) | 電子機器リ−ド用銅合金の製造法 | |
| JPS6221800A (ja) | ＧａＡｓ単結晶基板の製造方法 | |
| JPS586140A (ja) | シリコンウエ−ハの製造方法 | |
| JPS63182831A (ja) | キヤリアテ−プ及びその製造方法 |