WO2002027778A1 - Procédé de traitement thermique d'une plaquette de silicium - Google Patents

Procédé de traitement thermique d'une plaquette de silicium Download PDF

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Publication number
WO2002027778A1
WO2002027778A1 PCT/JP2001/008327 JP0108327W WO0227778A1 WO 2002027778 A1 WO2002027778 A1 WO 2002027778A1 JP 0108327 W JP0108327 W JP 0108327W WO 0227778 A1 WO0227778 A1 WO 0227778A1
Authority
WO
WIPO (PCT)
Prior art keywords
heat treatment
heat
wafer
silicon wafer
nitrogen
Prior art date
Application number
PCT/JP2001/008327
Other languages
English (en)
Japanese (ja)
Inventor
Norihiro Kobayashi
Masaro Tamatsuka
Original Assignee
Shin-Etsu Handotai Co.,Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin-Etsu Handotai Co.,Ltd. filed Critical Shin-Etsu Handotai Co.,Ltd.
Publication of WO2002027778A1 publication Critical patent/WO2002027778A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

L'invention concerne un procédé de traitement thermique d'une plaquette de silicium. Ce procédé permet de limiter même la dislocation par glissement d'une plaquette de silicium d'au moins 300 mm de diamètre par le traitement thermique de celle-ci au moyen d'un dispositif RTA, forme des dépôts d'oxygène servant de site de piégeage pendant le procédé de production du dispositif et ne nécessite pas un procédé supplémentaire en raison de l'absence d'un film inutile sur la surface de la plaquette après le traitement thermique. L'invention concerne également un procédé de traitement thermique d'une plaquette de silicium produite au moyen de la méthode de Czochralski consistant à utiliser un dispositif de chauffage rapide et de refroidissement rapide, une plaquette de silicium étant traitée thermiquement en atmosphère de gaz mixte, azote et argon, renfermant entre 1 et 50 % en volume d'azote à une température comprise entre 1150 et 1350 °C pendant une durée comprise entre 1 et 60 secondes.
PCT/JP2001/008327 2000-09-27 2001-09-26 Procédé de traitement thermique d'une plaquette de silicium WO2002027778A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000294406A JP2002110685A (ja) 2000-09-27 2000-09-27 シリコンウェーハの熱処理方法
JP2000-294406 2000-09-27

Publications (1)

Publication Number Publication Date
WO2002027778A1 true WO2002027778A1 (fr) 2002-04-04

Family

ID=18777021

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2001/008327 WO2002027778A1 (fr) 2000-09-27 2001-09-26 Procédé de traitement thermique d'une plaquette de silicium

Country Status (3)

Country Link
JP (1) JP2002110685A (fr)
TW (1) TW543092B (fr)
WO (1) WO2002027778A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102560629A (zh) * 2012-03-10 2012-07-11 天津市环欧半导体材料技术有限公司 一种低成本直拉硅单晶的生产方法

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6503594B2 (en) * 1997-02-13 2003-01-07 Samsung Electronics Co., Ltd. Silicon wafers having controlled distribution of defects and slip
KR100378184B1 (ko) * 1999-11-13 2003-03-29 삼성전자주식회사 제어된 결함 분포를 갖는 실리콘 웨이퍼, 그의 제조공정및 단결정 실리콘 잉곳의 제조를 위한 초크랄스키 풀러
KR20040007025A (ko) * 2002-07-16 2004-01-24 주식회사 하이닉스반도체 반도체 웨이퍼 제조 방법
CN100472001C (zh) * 2003-02-25 2009-03-25 株式会社上睦可 硅晶片、soi衬底、硅单晶生长方法，硅晶片制造方法及soi衬底制造方法
KR101087905B1 (ko) * 2004-07-22 2011-11-30 한양대학교 산학협력단 근접 게터링 능력을 가진 나노 에스오아이 웨이퍼의 제조방법 및 그에 따라 제조된 나노 에스오아이 웨이퍼
JP2008053521A (ja) 2006-08-25 2008-03-06 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 シリコンウェーハの熱処理方法
JP6111614B2 (ja) * 2012-11-22 2017-04-12 信越半導体株式会社 シリコンウェーハの熱処理方法
JP7463911B2 (ja) 2020-08-26 2024-04-09 信越半導体株式会社 シリコン単結晶基板の製造方法及びシリコンエピタキシャルウェーハの製造方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06163557A (ja) * 1992-11-27 1994-06-10 Toshiba Ceramics Co Ltd シリコンウェーハ
JP3037794U (ja) * 1996-11-15 1997-05-20 株式会社エフティーエル 半導体装置の製造装置
JPH1167781A (ja) * 1997-08-08 1999-03-09 Sumitomo Metal Ind Ltd シリコン半導体基板の熱処理方法
EP0915502A2 (fr) * 1997-10-30 1999-05-12 Shin-Etsu Handotai Co., Ltd Procédé de traitement thermique d'une plaquette de silicium et plaquette de silicium traitée par ce procédé
US5994761A (en) * 1997-02-26 1999-11-30 Memc Electronic Materials Spa Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor
EP0964443A2 (fr) * 1998-06-09 1999-12-15 Shin-Etsu Handotai Company Limited Procédé de traitement thermique d'une plaquette de silicium et plaquette de silicium
JP2001203210A (ja) * 1999-11-13 2001-07-27 Samsung Electronics Co Ltd 制御された欠陥分布をもつシリコンウェーハ、その製造方法及び単結晶シリコンインゴットを製造するためのチョクラルスキープーラ
JP2001308101A (ja) * 2000-04-19 2001-11-02 Mitsubishi Materials Silicon Corp シリコンウェーハの熱処理方法及びシリコンウェーハ

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06163557A (ja) * 1992-11-27 1994-06-10 Toshiba Ceramics Co Ltd シリコンウェーハ
JP3037794U (ja) * 1996-11-15 1997-05-20 株式会社エフティーエル 半導体装置の製造装置
US5994761A (en) * 1997-02-26 1999-11-30 Memc Electronic Materials Spa Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor
JPH1167781A (ja) * 1997-08-08 1999-03-09 Sumitomo Metal Ind Ltd シリコン半導体基板の熱処理方法
EP0915502A2 (fr) * 1997-10-30 1999-05-12 Shin-Etsu Handotai Co., Ltd Procédé de traitement thermique d'une plaquette de silicium et plaquette de silicium traitée par ce procédé
EP0964443A2 (fr) * 1998-06-09 1999-12-15 Shin-Etsu Handotai Company Limited Procédé de traitement thermique d'une plaquette de silicium et plaquette de silicium
JP2001203210A (ja) * 1999-11-13 2001-07-27 Samsung Electronics Co Ltd 制御された欠陥分布をもつシリコンウェーハ、その製造方法及び単結晶シリコンインゴットを製造するためのチョクラルスキープーラ
JP2001308101A (ja) * 2000-04-19 2001-11-02 Mitsubishi Materials Silicon Corp シリコンウェーハの熱処理方法及びシリコンウェーハ

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
C. MADDALON-VINANTE AND D. BARBIER: "Charged particle activate analysis study of oxygen outdiffusion from Czochralski-grown silicon during classical and rapid thermal annealing in various gas ambient", J. APPL. PHYS., vol. 74, no. 10, 15 November 1993 (1993-11-15), pages 6115 - 6119, XP002907757 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102560629A (zh) * 2012-03-10 2012-07-11 天津市环欧半导体材料技术有限公司 一种低成本直拉硅单晶的生产方法

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JP2002110685A (ja) 2002-04-12
TW543092B (en) 2003-07-21

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