543092 A7 B7 五、發明説明（1) 【發明所屬之技術領域】 (請先閲讀背面之注意事項再填寫本頁) 本發明係關於矽晶圓之熱處理方法，尤其係關於一種 即使是直徑3 0 0 m m以上的矽晶圓，也可防止滑動錯位 的矽晶圓之熱處理方法。 【背景技術】 在利用C Z法所製成的矽結晶當中，由於使用石英製 的坩堝，因此多少會混入氧。已知該氧會在結晶製造過程 以及切斷•基板加工後之元件製程中的熱處理時變成析出 物。氧析出物位於元件活性領域時，會成爲導致元件產率 下降的主因，另一方面，在基板內部有氧析出物形成時， 則具有改善對於重金屬污染種類之除氣能力的效果。從這 些觀點看來，控制矽基板中氧析出物的量（控制氧析出特 性）極爲重要。 經濟部智慧財產笱員工消費合作社印製 過去，此氧析出特性的控制係在矽結晶製造時控制結 晶中氧濃度、或是對基板施以長時間的熱處理來進行。然 而，關於前者之控制，必須對於所要求的氧濃度設定結晶 製造條件，不僅製造作業繁雜，其精密度也不準確。此外 ，即使相對於矽結晶之成長方法爲相同的氧濃度，由於結 晶製造時之熱履歷的影響，成長軸方向的氧析出特性也不 均一，爲了使其均一就需要長時間的熱處理，所以生產性 很低。 因此，本案申請人先前提出申請的日本特開 2 0 0 0 - 3 1 1 5 0號公報所記載的技術並不是控制由 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -4- 543092 A7 B7__ 五、發明説明（2) (請先閲讀背面之注意事項再填寫本頁) C Z法所製成的矽晶圓中的氧濃度，而係使用急速加熱· 急速冷卻裝置（Rapid Thermal Annealer ··以下亦稱爲 RTA裝置）進行熱處理，以獲得具有所希望之氧析出特 性的矽晶圓之熱處理方法。 根據此方法，不管氧濃度是否爲14ppma (曰本 電子工業振興協會（J E I D A )規格）以下的低氧濃度 ，皆可獲得一種在晶圓中具有成爲氧析出之根本的核，也 就是具有內部缺陷的氧析出物密度爲3 X 1 0 9個/ c m 3 以上之作爲除氣區域所需之標準之氧析出核的矽晶圓，除 了這個優點之外，由於熱處理所使用的氣體爲氮1 0 0% 或氧1 0 0 %或是氧與氮之混合氣體，因此熱處理後的晶 圓表面最後會形成氮化膜或氧化膜，因而需要將其去除的 步驟。 而且，在此方法中，完全沒有考慮到因爲使用RTA 裝置所發生的滑動錯位，因此尤其在適用於容易發生滑動 錯位之直徑3 0 0 m m以上的大口徑晶圓時會產生問題。 經濟部智慧財產局員工消費合作社印製 另一方面，在使用RTA裝置進行熱處理時，以降低 這種滑動錯位的發明當中，還是有本案申請人先前所提出 的曰本特開平1 1 一 1 3 5 5 1 4號公報。此技術係使用 氫的比例爲1 0至8 0容量％之氫與氬的混合氣體作爲熱 處理時的環境，因而可同時減少滑動錯位及C ◦ P ( Crystal Originated Particle)。而且，所使用的氣體爲氬及 氫，因此會如前述日本特開2 0 0 0 - 3 1 1 5 0號公報 的情況一樣，在熱處理後的晶圓表面不會形成不必要的膜 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -5- 543092 A7 ___ B7_ 五、發明説明（3) 〇 _然而，在使用這種熱處理環境的情況下，雖|具有因 (請先閲讀背面之注意事項再填寫本頁) 爲可降低晶圓表面的c 0 p而可提高元件特性的優點，但 是卻也具有在元件製程中，無法充分形成會成爲除氣區域 之氧析出物的缺點。 【發明之揭示】 本發明係鑒於這種問題點而硏創者，其目的在於提供 一種矽晶圓之熱處理方法，該方法係利用R T A裝置進行 熱處理，因此即使是直徑3 0 〇mm以上的砂晶圓，也可 防止滑動錯位，且在元件製程中可充分形成會成爲除氣區 域的氧析出物，而且在熱處理後，晶圓表面不會形成不必 要的膜，因此不需要追加步驟。 經濟部智慧財產局員工消費合作社印製 爲了解決上述課題，本發明矽晶圓之熱處理方法的第 1樣態係利用急速加熱•急速冷卻裝置，對於由切克勞斯 基法製成的矽晶圓進行熱處理的方法，其特徵在於：在氮 的比例爲1至5 0容量％之氮與氬的混合氣體環境下，以 1 1 5 0至1 3 5 CTC的溫度進行1至6 0秒的熱處理。 如上述於熱處理環境至少含有1容量％的氮，即可在 元件製程中充分形成會成爲除氣區域的氧析出物，若氮爲 5 0容量％以下，則可抑制滑動錯位的發生，同時亦可避 免於表面形成氮化膜。 另外，本發明矽晶圓之熱處理方法的第2樣態係利用 急速加熱。急速冷卻裝置，對於由切克勞斯基法製成的矽 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -6 - 543092 A7 B7 五、發明説明（4) (請先閱讀背面之注意事項再填寫本頁) 晶圓進行熱處理的方法，其特徵在於：在含有氮1容量％ 以上，且含有氫1 0至4 0容量％之氮、氫以及氬的混合 氣體環境下，以1 1 5 0至1 3 5 0 °C的溫度進行1至 6 0秒的熱處理。 如上述若形成除了 1容量％以上的氮，又含有1 0至 4 0容量％的氫的環境，則除了可形成充分的除氣區域以 及避免滑動錯位之外，還可利用矽原子的遷移來除去晶圓 表面的C〇P，因而可獲得一種具有優良品質的矽晶圓。 再者，在熱處理前的晶圓表面，有時會有潔淨室之空 氣瀘淸器所引起的硼污染之附著，但是如果在含有氫的環 境下進行熱處理，則同時具有可除去這種硼污染的效果， 因而可防止熱處理後之晶圓表面附近的電阻率變動。 經濟部智慧財產¾員工消費合作社印製 另外，任一樣態的熱處理方法皆係熱處理溫度若爲超 過1 3 5 0艽的高溫時，便會有容易發生滑動錯位及金屬 污染等的問題發生，另一方面，不滿1 1 5 0 °C時，又可 能會使除氣區域的形成及C〇P的除去變得不充分。而且 係單片式處理，因此考慮到生產性（產率）時，熱處理時 間最好在6 0秒以下，爲了獲得本發明之效果，則必須在 1 1 5 0至1 3 5 0 °C的範圍進行1秒以上之熱處理。 而要進行熱處理的矽晶圓若是直徑3 0 〇mm或 4 0 0 m m或更大的c Z矽晶圓，則本發明方法中抑制滑 動錯位的效果就非常大。 以下對於本發明之成立過程再詳加說明。 本發明者群爲了在近來矽晶圓之大口徑化及晶圓品質 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 543092 A7 ___ B7 五、發明説明（5)543092 A7 B7 V. Description of the invention (1) [Technical field to which the invention belongs] (Please read the precautions on the back before filling out this page) The present invention relates to a method for heat treatment of silicon wafers, and more particularly to an even diameter of 3 0 Heat treatment methods for silicon wafers with a thickness of 0 mm or more can prevent sliding misalignment. [Background Art] Among the silicon crystals produced by the CZ method, since a crucible made of quartz is used, some oxygen is mixed. This oxygen is known to become a precipitate during heat treatment in the crystal manufacturing process and in the element manufacturing process after cutting and substrate processing. When oxygen precipitates are located in the active area of the element, it will be the main cause of the decrease in device yield. On the other hand, when oxygen precipitates are formed inside the substrate, it has the effect of improving the degassing ability for heavy metal contamination types. From these viewpoints, it is extremely important to control the amount of oxygen precipitates (controlling the characteristics of oxygen precipitation) in the silicon substrate. Printed by the Intellectual Property of the Ministry of Economic Affairs and Employee Cooperatives In the past, the control of this oxygen evolution characteristic was performed by controlling the oxygen concentration in the crystal during silicon crystal manufacturing, or by subjecting the substrate to long-term heat treatment. However, regarding the former control, it is necessary to set crystal manufacturing conditions for the required oxygen concentration, which is not only complicated in manufacturing operations but also inaccurate in accuracy. In addition, even if the same oxygen concentration is used for the growth method of silicon crystals, due to the influence of thermal history during the production of crystals, the oxygen precipitation characteristics in the growth axis direction are not uniform. In order to make them uniform, long-term heat treatment is required. Sex is very low. Therefore, the technology described in Japanese Patent Application Laid-Open No. 2000- 3 1 1 50 previously filed by the applicant of this case does not control the application of the Chinese National Standard (CNS) A4 specification (210X297 mm) to this paper size -4 -543092 A7 B7__ 5. Description of the invention (2) (Please read the precautions on the back before filling this page) The oxygen concentration in the silicon wafer produced by the CZ method uses a rapid heating and rapid cooling device (Rapid Thermal Annealer (hereinafter also referred to as an RTA device) is a method of heat treatment to obtain a silicon wafer having desired oxygen precipitation characteristics. According to this method, regardless of whether the oxygen concentration is lower than 14 ppma (the Japanese Electronics Industry Promotion Association (JEIDA) specification), a low-oxygen concentration can be obtained in the wafer, which has a core that becomes the root of oxygen precipitation, that is, it has internal defects. In addition to this advantage, silicon wafers with a density of oxygen precipitates of 3 X 1 0 9 / cm 3 or more are used as standard oxygen precipitation nuclei for the degassing area. Because the gas used for heat treatment is nitrogen 1 0 0% or 100% oxygen or a mixed gas of oxygen and nitrogen, so a nitride film or an oxide film is finally formed on the surface of the wafer after the heat treatment, and a step of removing it is required. Furthermore, in this method, no consideration is given to sliding misalignment due to the use of the RTA device, and therefore a problem occurs particularly when applied to a large-aperture wafer having a diameter of 300 mm or more, which is liable to cause sliding misalignment. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. On the other hand, among the inventions that use RTA equipment to perform heat treatment to reduce such sliding dislocations, there are still Japanese patent publications 1 1 1 1 3 previously proposed by the applicant of this case. 5 5 1 Bulletin 4. This technology uses a mixed gas of hydrogen and argon at a hydrogen ratio of 10 to 80% by volume as the environment during heat treatment, so it can reduce sliding dislocations and C (Crystal Originated Particle) at the same time. In addition, since the gases used are argon and hydrogen, as in the case of the aforementioned Japanese Patent Laid-Open No. 2000-3-1150, unnecessary film and paper will not be formed on the surface of the wafer after heat treatment. The dimensions are applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) -5- 543092 A7 ___ B7_ V. Description of the invention (3) 〇_ However, in the case of using this heat treatment environment, although | (Please read the notes on the back and fill in this page again.) In order to reduce the c 0 p of the wafer surface and improve the characteristics of the device, it also has the disadvantage that in the device manufacturing process, oxygen precipitates that can become outgassing regions cannot be formed sufficiently. Disadvantages. [Disclosure of the invention] The present invention was created in view of this problem, and its purpose is to provide a heat treatment method for silicon wafers. This method uses RTA equipment for heat treatment, so even sand with a diameter of 300 mm or more The wafer can also prevent sliding displacement, and can sufficiently form oxygen precipitates that will become outgassing regions in the element manufacturing process. After the heat treatment, unnecessary films are not formed on the wafer surface, so no additional steps are required. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. In order to solve the above-mentioned problems, the first aspect of the heat treatment method of the silicon wafer of the present invention uses a rapid heating and rapid cooling device for silicon crystals made by the Cheklaussky method The method for performing heat treatment in a circle is characterized in that: in a mixed gas environment of nitrogen and argon with a nitrogen ratio of 1 to 50% by volume, the temperature is 1 to 60 seconds at a temperature of 1 150 to 1 35 CTC. Heat treatment. As mentioned above, in the heat treatment environment, it contains at least 1% by volume of nitrogen, which can sufficiently form oxygen precipitates that will become outgassing regions in the element manufacturing process. If the nitrogen is 50% by volume or less, the occurrence of sliding dislocation can be suppressed, and at the same time, It is possible to avoid the formation of a nitride film on the surface. The second aspect of the method for heat-treating a silicon wafer according to the present invention uses rapid heating. Rapid cooling device, applicable to the Chinese paper standard (CNS) A4 (210X297 mm) for the size of the silicon paper made by the Cheklaussky method -6-543092 A7 B7 V. Description of the invention (4) (Please read first (Notes on the back page, please fill in this page again.) The method for heat treatment of wafers is characterized in a mixed gas environment containing nitrogen, hydrogen, and argon containing 1% by volume or more of nitrogen and 10 to 40% by volume of hydrogen. The heat treatment is performed at a temperature of 1 150 to 1 350 ° C for 1 to 60 seconds. As described above, if an environment containing not less than 1% by volume of nitrogen and 10% to 40% by volume of hydrogen is formed, in addition to forming a sufficient degassing area and avoiding sliding dislocations, the migration of silicon atoms can also be used to The CoP on the surface of the wafer is removed, so that a silicon wafer with excellent quality can be obtained. In addition, on the surface of the wafer before heat treatment, boron contamination caused by air purifiers in clean rooms may adhere. However, if the heat treatment is performed in an environment containing hydrogen, the boron contamination can be removed at the same time. This prevents the resistivity from changing around the surface of the wafer after the heat treatment. Printed by the Intellectual Property of the Ministry of Economics ¾ Printed by employee consumer cooperatives. In addition, any heat treatment method in the same state is a heat treatment temperature of higher than 1350 ° C, which may cause problems such as sliding misalignment and metal pollution. On the other hand, when the temperature is less than 1 150 ° C, the formation of the outgassing area and the removal of COP may become insufficient. Moreover, it is a single-piece process. Therefore, in consideration of productivity (yield), the heat treatment time is preferably 60 seconds or less. In order to obtain the effect of the present invention, it must be at a temperature of 1 150 to 1350 ° C. The range is heat-treated for 1 second or more. And if the silicon wafer to be heat-treated is a cZ silicon wafer with a diameter of 300 mm or 400 mm or more, the effect of suppressing slip dislocation in the method of the present invention is very great. The establishment process of the present invention will be described in detail below. The present inventors' group is aiming at the recent increase in the diameter and quality of silicon wafers. The paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) 543092 A7 ___ B7 V. Description of the invention (5)
(除氣能力、無缺陷化）的嚴格要求下，對大口徑晶圓進 理以提局該晶圓品質，認爲可進行單片處理的*tRA (請先閲讀背面之注意事項再填寫本頁) —置最爲合適，因而著眼於利用該裝置的熱處理方法。 現在，利用R τ A裝置對於成爲主流的直徑2 〇 〇 mm矽晶圓，到數年前希望成爲主流的直徑3 〇 〇mm或 4 0 〇mm等大口徑晶圓進行熱處理時，防止滑動錯位成 爲一大課題。 在之前申請的日本特開平1 1 一 1 3 5 5 1 4號公報 中，熱處理中的環境若是氫的比例爲1 0至8 0容量％、 較佳爲4 0容量％以下之氫與氬的混合氣體，則可維持氫 的COP除去效果，同時防止滑動錯位。在此，有關可藉 由降低氫氣的濃度來防止滑動錯位的理由，日本特開平 1 1 - 1 3 5 5 1 4號公報中推測滑動錯位的發生與氫氣 的活性有關。 經濟部智慧財產笱員工消費合作社印製 因此，關於這點，本發明者群再詳加檢討時發現，不 僅與氫氣的活性有關，另一大原因在於：藉由混合比熱較 氫氣小一位數以上的氬氣，整個環境的比熱會下降，晶圓 表面上的溫度不均情況會減少，且晶圓之熱膨脹的面內均 一性會獲得改善。 因此，使用比熱與氬一樣小的氮來代替氫，不僅可防 止滑動錯位，也可利用氮環境下的熱處理來促進氧析出。 此時若將氫完全取代爲氮，則不易獲得利用氫來降低矽表 面之C ◦ P的效果，但是在該情況下，只要使用以原本 C〇P就很少的條件製作之矽單結晶所製成的砂晶圓即可 本紙張尺度適用中國國家標準（CNS ) A#見格（210X297公釐） -8 - 543092 A7 B7 五、發明説明（7) 19 氣體導入口 20 氣體排出丘_ 【發明之最佳實施形態】 本發明之方法當中’可急速加熱•急速冷卻政晶圓的 裝置之代表例可舉出利用熱放射的燈光加熱裝置’本發明 適合使用的砂晶圓之急速加熱·急速冷卻裝置（RT A裝 置）之一例則利用第4圖加以說明。第4圖係R T A裝置 之一例的槪略說明圖。 第4圖中，符號1 0係熱處理裝置，也就是RT A裝 置。此熱處理裝置1 0具有石英所構成的反應室1 1 ’可 在此反應室1 1內對晶圓1 8進行熱處理。加熱係利用從 上下左右圍繞反應室1 1而配置的加熱燈1 2來進行。此 加熱燈1 2可控制各自獨立供應的電力。 在此反應室1 1的氣體導入側設有氣體導入口 1 9 ’ 在氣體的排出側則裝設有自動閥1 3，可封鎖外部空氣。 於自動閥1 3則設有可利用閘閥開閉的未圖示晶圓插入口 。在自動閥1 3還設有氣體排出口 2 0，可調整爐內環境 〇 另外，晶圓1 8係配置於石英托盤1 4上所形成的3 點支撐部1 5上。在石英托盤1 4的氣體導入口側設有石 英製的緩衝器1 6，可防止從氣體導入口 1 9所導入的氣 體直接接觸晶圓1 8。 在反應室1 1還設有未圖示的溫度測量用特殊窗口， 本紙張又度適用中國國家標準（CNS ) Α4規格（21〇Χ29<7公釐） 丨__丨 —.-----#11 (請先閲讀背面之注意事項再填寫本頁)(Degassing ability, defect-free) under strict requirements, processing large-caliber wafers to improve the quality of the wafer, and * tRA that can be processed in a single wafer (please read the precautions on the back before filling in this Page)-the most suitable setting, so focus on the heat treatment method using this device. At present, the R τ A device is used to heat-treat large-diameter wafers, such as diameters of 300 mm and 400 mm, which have become mainstream in the past several years. Became a big issue. In Japanese Patent Application Laid-Open No. 1 1-1 3 5 5 1 4 previously applied, if the ratio of hydrogen in the heat treatment environment is 10 to 80% by volume, preferably 40% by volume or less of hydrogen and argon The mixed gas can maintain the COP removal effect of hydrogen and prevent sliding displacement. Here, regarding the reason that slipping dislocation can be prevented by reducing the hydrogen concentration, Japanese Patent Laid-Open No. 1 1-1 3 5 5 1 4 speculates that the occurrence of slipping dislocation is related to the activity of hydrogen. Printed by the Intellectual Property of the Ministry of Economic Affairs and the Consumer Consumption Cooperative. Therefore, when reviewing this in detail, the inventors found that it is not only related to the activity of hydrogen, but also because the specific heat of mixing is one digit less than hydrogen With the above argon, the specific heat of the entire environment will be reduced, the temperature unevenness on the wafer surface will be reduced, and the in-plane uniformity of the thermal expansion of the wafer will be improved. Therefore, the use of nitrogen with a specific heat as small as that of argon instead of hydrogen can not only prevent sliding dislocations, but also use heat treatment in a nitrogen environment to promote the precipitation of oxygen. At this time, if hydrogen is completely replaced by nitrogen, it is difficult to obtain the effect of reducing the C ◦ P of the silicon surface by using hydrogen. However, in this case, as long as a silicon single crystal plant is used, which is produced under conditions where CoP is rare. The finished sand wafer can be used in accordance with Chinese National Standards (CNS) A # see the standard (210X297 mm) -8-543092 A7 B7 V. Description of the invention (7) 19 Gas inlet 20 Gas exhaust mound _ [Invention Best Mode of Implementation] In the method of the present invention, "a representative example of a device capable of rapid heating and rapid cooling of a government wafer is a light heating device utilizing thermal radiation." The rapid heating and rapid processing of a sand wafer suitable for the present invention An example of a cooling device (RT A device) will be described with reference to FIG. 4. Fig. 4 is a schematic explanatory diagram of an example of the R T A device. In Fig. 4, reference numeral 10 denotes a heat treatment apparatus, that is, an RT A apparatus. This heat treatment apparatus 10 has a reaction chamber 11 1 'made of quartz. The wafer 18 can be heat-treated in the reaction chamber 11. The heating system is performed using heating lamps 12 arranged around the reaction chamber 11 from up, down, left, and right. The heating lamps 12 can control the power supplied independently. A gas introduction port 1 9 ′ is provided on the gas introduction side of the reaction chamber 11, and an automatic valve 13 is installed on the gas discharge side to block external air. The automatic valve 13 is provided with a wafer insertion port (not shown) that can be opened and closed by a gate valve. The automatic valve 13 is also provided with a gas exhaust port 20 to adjust the environment in the furnace. In addition, the wafer 18 is arranged on a three-point support portion 15 formed on the quartz tray 14. A gas buffer 16 is provided on the gas inlet side of the quartz tray 14 to prevent the gas introduced from the gas inlet 19 from directly contacting the wafer 18. The reaction chamber 11 is also provided with a special window for temperature measurement, which is not shown. This paper is also applicable to the Chinese National Standard (CNS) A4 specification (21〇 × 29 < 7 mm) 丨 __ 丨 --.---- -# 11 (Please read the notes on the back before filling this page)
、1T 線 經濟部智慧財產局員工消費合作社印製 -10- 543092 A7 B7 五、發明説明（8) 可利用設置於反應室1 1外部的高溫計1 7，透過該特殊 窗口測量晶圓1 8之溫度。 _ (請先閱讀背面之注意事項再填寫本頁) 利用上述熱處理裝置1 0急速加熱·急速冷卻晶圓 1 8的處理係以如下方式進行。 首先，利用與熱處理裝置1 〇相鄰而配置的未圖示晶 圓處理裝置，將晶圓1 8從未圖示的晶圓插入口放入反應 室1 1內，並且在配置於石英托盤1 4上之後，關閉自動 閥1 3。然後對加熱燈1 2供應電力，使晶圓1 8例如上 升至1 1 5 0至1 3 5 0 °C之預定溫度。此時，到形成目 的溫度的時間例如爲2 0秒左右。 接下來，藉由在該溫度下保持預定時間，可對晶圓 1 8施加高溫熱處理。經過預定時間且結束高溫熱處理後 ’使加熱燈1 2的輸出下降，以降低晶圓1 8的溫度。此 降、溫亦可以例如2 0秒左右來進行。最後，利用晶圓處理 裝置取出晶圓，以完成熱處理。 實施例 以下舉出實施例，以更爲具體地說明本發明。 經濟部智慧財產苟員工消費合作社印製 (實驗例1 ) 製作以C Z法提拉的結晶方位〈1 〇 〇〉、直徑 3 〇 0 m m、晶格間氧濃度 1 6 p P m a ( J E I D A ) 的矽晶圓，並且使用與第4圖所示者相同的R T A裝置， 在氬（A ι* )與氮（n2)的混合氣體環境下，如第1圖的 橫軸所示，改變環境中氮氣的濃度（容量％ )來進行 本紙張尺度適用巾關家標準（CNS) A4·^ (210X297公釐） -11 - 543092 A7 __B7___ 五、發明説明（ 根據第2圖，在氫氣濃度爲4 0%以下時完全沒有觀 __察到滑動錯位。另一方面，根據第3圖，氫氣濃度若爲 1 0 %左右以上，則C〇P的降低效果很高。 再者，利用與實驗例1相同的方法測量這些晶圓的內 部缺陷密度時，可知在環境中若含有1 %左右以上的氮氣 ，內部缺陷密度便高，而且即使再提高氮氣濃度也不會增 加太多。 【產業上的利用可能性】 如以上所述，根據本發明之方法，由於係利用R T A 裝置進行熱處理，因此可達成即使是直徑3 0 Onim以上 的矽晶圓，也可防止滑動錯位，且在元件製程中可充分形 成會成爲除氣區域的氧析出物，而且在熱處理後，晶圓表 面不會形成不必要的膜，因此不需要追加步驟的效果。 (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS ) A4規格（210乂297公釐） -13-Printed by the Consumer Cooperative of Intellectual Property Bureau, Ministry of Economic Affairs, 1T Line -10- 543092 A7 B7 V. Description of Invention (8) The pyrometer 1 7 outside the reaction chamber 1 1 can be used to measure wafers through this special window 1 8 Of temperature. _ (Please read the precautions on the reverse side before filling out this page.) The rapid heating and rapid cooling of wafers 18 using the heat treatment device 10 are performed as follows. First, a wafer processing apparatus (not shown) arranged adjacent to the heat treatment apparatus 10 is used to place a wafer 18 into a reaction chamber 11 from a wafer insertion port (not shown), and the wafer is placed on a quartz tray 1 After 4 is closed, close the automatic valve 1 3. Then, electric power is supplied to the heating lamp 12 to raise the wafer 18 to, for example, a predetermined temperature of 1150 to 1350 ° C. At this time, the time to the target temperature is, for example, about 20 seconds. Next, by holding at this temperature for a predetermined time, a high-temperature heat treatment can be applied to the wafer 18. After a predetermined time has elapsed and the high-temperature heat treatment is completed, the output of the heating lamp 12 is decreased to reduce the temperature of the wafer 18. This temperature reduction and temperature may be performed, for example, in about 20 seconds. Finally, the wafer is taken out by a wafer processing apparatus to complete the heat treatment. Examples The following examples are given to explain the present invention more specifically. Printed by the Intellectual Property of the Ministry of Economic Affairs and the Consumers' Cooperative (Experiment Example 1) The crystal orientation of CZ pulling method (100), diameter of 3000 mm, and inter-lattice oxygen concentration of 16 p P ma (JEIDA) were produced. Silicon wafer, and using the same RTA device as shown in Figure 4, under a mixed gas environment of argon (A *) and nitrogen (n2), as shown in the horizontal axis of Figure 1, change the nitrogen in the environment Concentration (volume%) to carry out the paper standard applicable to household standards (CNS) A4 · ^ (210X297 mm) -11-543092 A7 __B7___ 5. Description of the invention (According to the second figure, the hydrogen concentration is 40% In the following, no sliding dislocation was observed at all. On the other hand, according to Fig. 3, if the hydrogen concentration is about 10% or more, the reduction effect of CoP is very high. Moreover, the utilization is the same as that of Experimental Example 1. When measuring the internal defect density of these wafers, it can be seen that if the environment contains more than 1% nitrogen, the internal defect density will be high, and even if the nitrogen concentration is increased, it will not increase too much. [Industrial use may be possible Properties] as described above, according to the present invention Since the method uses a RTA device to perform heat treatment, even silicon wafers with a diameter of 30 Onim or more can be prevented from slipping and dislodged, and oxygen precipitates that can become outgassing regions can be sufficiently formed in the element manufacturing process. After heat treatment, unnecessary film will not be formed on the surface of the wafer, so there is no need for additional steps. (Please read the precautions on the back before filling out this page.) Printed on paper. China National Standard (CNS) A4 Specification (210 乂 297mm) -13-