WO1995010856A1 - Cellule photovoltaique et procede de fabrication d'une telle cellule - Google Patents
Cellule photovoltaique et procede de fabrication d'une telle cellule Download PDFInfo
- Publication number
- WO1995010856A1 WO1995010856A1 PCT/CH1994/000192 CH9400192W WO9510856A1 WO 1995010856 A1 WO1995010856 A1 WO 1995010856A1 CH 9400192 W CH9400192 W CH 9400192W WO 9510856 A1 WO9510856 A1 WO 9510856A1
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- WIPO (PCT)
- Prior art keywords
- layer
- substrate
- photovoltaic cell
- cell according
- transparent conductive
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 238000000034 method Methods 0.000 title claims description 36
- 239000000758 substrate Substances 0.000 claims abstract description 76
- 238000002161 passivation Methods 0.000 claims abstract description 34
- 239000004065 semiconductor Substances 0.000 claims abstract description 9
- 239000010936 titanium Substances 0.000 claims abstract description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052709 silver Inorganic materials 0.000 claims abstract description 4
- 239000004332 silver Substances 0.000 claims abstract description 4
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 4
- 238000000151 deposition Methods 0.000 claims description 29
- 230000008021 deposition Effects 0.000 claims description 23
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 11
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 9
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 5
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 4
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical class [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000002800 charge carrier Substances 0.000 description 3
- 238000012864 cross contamination Methods 0.000 description 3
- 150000003376 silicon Chemical class 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 239000002699 waste material Substances 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT® solar cells; solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022483—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of zinc oxide [ZnO]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/958—Passivation layer
Definitions
- the present invention relates to a photovoltaic cell comprising a semiconductor substrate, an emitter formed by a layer having a first conductivity (p or n), a front passivation layer placed between the substrate and the emitter, a transparent conductive layer before , a rear passivation layer deposited on the rear surface of the substrate and a reflective element comprising a rear transparent conductive layer, a bonding layer and a reflective layer.
- a photovoltaic cell comprising a semiconductor substrate, an emitter formed by a layer having a first conductivity (p or n), a front passivation layer placed between the substrate and the emitter, a transparent conductive layer before , a rear passivation layer deposited on the rear surface of the substrate and a reflective element comprising a rear transparent conductive layer, a bonding layer and a reflective layer.
- It also relates to a method of manufacturing such a photovoltaic cell.
- the present invention relates to the field of photovoltaic cells, commonly called solar cells, which operate essentially on the following principle: when a photon arrives on a semiconductor, it modifies the number of charge carriers by passage of an electron from the valence band to the conduction band and produces an electron / hole pair. An electromotive force then appears at the terminals of the junction which behaves like a battery.
- photovoltaic cells Two ways are explored to make photovoltaic cells. One of them consists in using a material with high photovoltaic efficiency (greater than 10%) of a crystalline nature which is cut into platelets. The other is to deposit a thin layer a material with a lower yield (5% to 10%) on an inexpensive support (glass, stainless steel, plastic, etc.) of large dimensions.
- the present invention relates to the first route mentioned.
- a first method for producing such cells consists in doping a substrate formed of silicon, by thermal diffusion of an element such as boron or phosphorus, at a temperature higher than 1000 ° C.
- This process has a number of drawbacks. It requires a high temperature treatment which consumes a lot of energy and leads to a high manufacturing cost and moreover, if a thin substrate and a high temperature are used, the risk of folding or breaking of said substrate becomes high and the waste is important.
- the solar cells obtained according to this process are therefore relatively expensive.
- the cell comprises a silicon substrate of positive conductivity p on which a front layer of negative conductivity n and a passivation layer of silica (SiO.sub.) Are added.
- the passivation layer of silica is first deposited on the rear face of the substrate. Part of this passivation layer is then removed, and finally the positive conductivity layer doped with boron is deposited to form the rear contact by locally creating the surface field.
- the use of a passivation layer of silica necessarily involves the creation of non-passivated zones to make the rear contact.
- An embodiment has also been devised making it possible to increase the optical path of the light rays in a solar cell, while keeping the thickness of this cell as small as possible.
- This embodiment consists in providing the upper surface of the cell with a transparent layer, textured in such a way that the light rays which arrive on this layer perpendicular to the plane of the cell are deflected by refraction and pass through the cell in a direction in which its thickness is not minimal.
- Another method leading to the same result consists in using a textured substrate and in depositing on this substrate layers of substantially uniform thickness.
- a cell as defined in the preamble characterized in that the rear passivation layer covers the entire rear surface of the substrate, and in that said passivation layer is covered with a rear layer, producing a surface field, having a second conductivity (n or p) opposite to the first conductivity of the emitter.
- the semiconductor substrate can have said second conductivity (n or p), be intrinsic or be compensated.
- the semiconductor substrate can be made of crystalline or polycrystalline silicon and its thickness can be between 50 ⁇ m and 150 ⁇ m and preferably substantially equal to 80 ⁇ m.
- the emitter is advantageously formed from hydrogenated microcrystalline silicon or from hydrogenated silicon carbide. Its thickness is between 20 ⁇ and 500 ⁇ and preferably substantially equal to
- the front passivation layer is preferably made of intrinsic hydrogenated amorphous silicon and its thickness is advantageously between 20 ⁇ and 500 A and preferably substantially equal to
- said transparent conductive layer comprises zinc oxide (ZnO) and its thickness is preferably between 500 ⁇ and 5000 ⁇ and substantially equal to 1000 ⁇ .
- the rear passivation layer may be made of intrinsic hydrogenated amorphous silicon and its thickness is advantageously between 20 A and 500 A and preferably substantially equal to 80 A.
- the rear layer producing a surface field is advantageously made of hydrogenated microcrystalline silicon and its thickness is preferably between 100 ⁇ and 1000 ⁇ and substantially equal to 300 ⁇ .
- the rear transparent conductive layer is made of highly doped zinc oxide (ZnO) and its thickness is between 500 ⁇ and 5000 ⁇ and substantially equal to 2000 A.
- ZnO highly doped zinc oxide
- the bonding layer of the reflective element is preferably a layer of titanium (Ti) of thickness between 10 A and 100 ⁇ and substantially equal to 15 A and the reflective layer of this element is composed of silver and a a thickness substantially equal to 2000 . AT.
- the transparent conductive layers front and rear of the cell according to the invention can be textured and the substrate can be smooth.
- This substrate can also be textured and the transparent conductive layers front and rear can have a substantially uniform thickness.
- the method of manufacturing a photovoltaic cell according to the invention is characterized in that the following steps are carried out: - a semiconductor substrate is placed in a deposition chamber; - A plasma is deposited successively at a deposition frequency between 35 and 200 MHz and preferably substantially equal to 70 MHz, a layer of frontal passivation, an emitter, a layer of back passivation and a layer of back producing a field of area;
- a front transparent conductive layer and a rear transparent conductive layer are deposited by a magnetron sputtering method at a radio frequency between 1 and 100 MHz and preferably substantially equal to 13.56 MHz; and - a bonding layer and a reflective layer are deposited on the rear transparent conductive layer.
- the substrate which is placed in the deposition chamber, has undergone chemical attack.
- the substrate which is placed in the deposition chamber, is a raw substrate obtained after sawing, the front surface and the rear surface of which are attacked by means of a plasma at a frequency included between 1 and 200 MHz and preferably equal to 70 MHz.
- a textured transparent conductive layer is deposited on a substantially smooth substrate.
- the substrate is attacked by a plasma at a frequency between and between 1 and 200 MHz and layers of substantially uniform thickness are deposited on the textured substrate thus obtained.
- the whole of the operations is preferably carried out at a temperature between 20 ° C and 600 ° C and preferably between 150 ° C and 300 ° C.
- FIG. 1 is a schematic sectional view of a first embodiment of a photovoltaic cell according to the invention, obtained from a smooth substrate;
- FIG. 2 is a schematic sectional view of a second embodiment of a photovoltaic cell according to the invention, obtained from a textured substrate;
- FIG. 3 illustrates the steps of the manufacturing process of a photovoltaic cell according to the invention.
- the photovoltaic cell 10 essentially consists of a substrate 11, provided on one of its faces, with a frontal passivation layer 12, with an emitter 14 and with a transparent conductive layer 15 and on its other face, a rear passivation layer 17, a rear layer 18 producing a surface field and a reflective element 19.
- Light rays 16 arrive on the photovoltaic cell on the side of the front transparent conductive layer 15.
- the substrate 11 is made of crystalline silicon and in the embodiment described, has a thickness of about 80 ⁇ m.
- the front passivation layer 12 is obtained by depositing on the front face of this substrate, an intrinsic layer of hydrogenated amorphous silicon of thickness approximately 80 ⁇ . Then deposited on this front passivation layer 12, a microcrystalline layer of hydrogenated silicon of thickness about 100 A having a conductivity, called first conductivity which, in the example shown here, is a negative conductivity n.
- the layer thus obtained constitutes the emitter 14-.
- a transparent conductive layer 15 (for example made of zinc oxide ZnO) and having a textured surface obtained by chemical attack, by plasma, or by any other similar process, is then deposited on this emitter 14-.
- This transparent conductive layer 15 with an average thickness of 1000 ⁇ , taking into account its texture, constitutes a "light trap".
- the incident light rays 16 arriving perpendicularly to the plane of the cell 10 are deflected by refraction so that the actual length traveled by each ray in the cell is lengthened. This has the effect of increasing the number of band-changing electrons, and therefore the number of electron / hole pairs, and thus increasing the efficiency of the cell.
- this transparent conductive layer 15 can be made of any transparent conductor. Its thickness is chosen so as to constitute an anti-reflective layer for the range of wavelengths used. In the application described, the thickness is optimized for the solar spectrum.
- the rear passivation layer 17 deposited on the rear face of the substrate 11 is identical in composition and thickness to the layer 12.
- the rear layer 18 producing a surface field is obtained by depositing, on the layer 17, hydrogenated silicon, the conductivity, called second conductivity, is opposite to the conductivity of the emitter 14, and in this case, positive. The deposit is made over a thickness of approximately 300 A.
- the three layers constituting the reflecting element 19 are successively deposited on the monocrystalline layer thus obtained.
- the first layer 20 of this reflecting element is a transparent conductive layer which prevents light from inside the cell from coming out, returning it back into the cell through the two junctions.
- This transparent conductive layer 20 is composed of zinc oxide (ZnO) and has a thickness of 2000 ⁇ .
- a reflective layer is composed of zinc oxide (ZnO) and has a thickness of 2000 ⁇ .
- This reflective layer 22 also plays the role of rear contact element.
- the substrate 11 has a conductivity.
- This conductivity which must be opposite to that of the emitter 14, is a positive conductivity p. It should however be noted that a similar photovoltaic cell can be produced by reversing all the conductivities.
- the substrate then has a negative conductivity, as well as the microcrystalline layer 18 and the emitter 14 has a positive conductivity.
- the substrate can be compensated or intrinsic.
- Figure 2 shows an embodiment in which the substrate 11 'is made of a material identical to that of the substrate 11 of Figure 1, but has textured front and rear surfaces.
- the emitter 14 and the rear layer 18 producing a surface field are similar to those described with reference to FIG. 1.
- the transparent conductive layers front 15 and rear 20 also have a uniform thickness.
- the final surface of the finished cell is textured in the same way as in the cell shown in Figure 1.
- FIG. 3 represents the stages of the manufacturing process of a photovoltaic cell as described above.
- the substrate 11 is placed in a deposition chamber 30, on a support 31 allowing the two faces of this substrate to be exposed simultaneously to etching and deposition devices 32.
- the substrate introduced may have undergone before its introduction into the deposition chamber, a chemical attack according to a method known per se making it possible to remove the layers of material which have been damaged during its sawing. It can also be introduced as is.
- the first operation to be carried out consists in removing the deteriorated layer by carrying out a plasma attack at a frequency of approximately 13.56 MHz on both sides. of the substrate.
- the second step of the process is optional. It consists in attacking the substrate by means of a plasma at a frequency between 1 and 200 MHz. This attack makes it possible to obtain the texture of the surfaces of the substrate. This step is of course only carried out if one wishes to texturize the substrate and not the transparent conductive layers.
- the front passivation layer of intrinsic hydrogenated amorphous silicon is deposited on the substrate.
- This deposition is carried out according to the very high frequency plasma deposition method as described in European patent EP-A-0 263 788, this frequency preferably being of the order of 70 MHz.
- microcrystalline layer of hydrogenated silicon serving as emitter 14 is then successively deposited, the rear passivation layer of hydrogenated amorphous silicon and the rear layer 18 producing a surface field.
- a fourth step consists in depositing by a vaporization process known per se, such as a magnetron cathode sputtering process at a frequency equal to 13.56 MHz, the transparent conductive layer before 15 and the layers forming the reflecting element 19 - If the substrate is smooth, conductive layers with surface texturing will be deposited. On the other hand, if the substrate is textured, the conductive layers will be produced so as to have a substantially uniform thickness.
- a vaporization process known per se such as a magnetron cathode sputtering process at a frequency equal to 13.56 MHz
- This process has the advantage of making it possible to carry out all of the steps continuously without intermediate manipulation between the moment when the substrate is introduced into the deposition chamber, even when it is introduced there directly after sawing, and that when the cell is complete. This not only saves manufacturing time compared to conventional manufacturing processes in which the substrates must be handled during manufacturing, but also allows the use of particularly fine substrates while reducing the risk of breakage which can occur during these manipulations.
- the substrate may as well be monocrystalline as polycrystalline, or have a given negative or positive conductivity, be intrinsic or compensated, without the manufacturing process being modified. This makes it possible to use a very poor quality base material, therefore particularly inexpensive, without affecting the final yield of the cell;
- VHF process very high frequency plasma deposition process at a frequency substantially equal to 70 MHz
- VHF process very high frequency plasma deposition process at a frequency substantially equal to 70 MHz
- the deposition of the emitter and the back layer producing a surface field gives layers with a lower activation energy than that obtained using other methods. The behavior of these layers is then more favorable.
- the deposition of the doped microcrystalline layers makes it possible to obtain a better conductivity than using the methods of the prior art. This reduces the serial resistance of the cell, which increases its efficiency;
- the deposition of a microcrystalline silicon emitter reduces the absorption of the wavelengths belonging to the visible spectrum compared to a doped amorphous silicon emitter;
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP94926766A EP0673549A1 (fr) | 1993-10-11 | 1994-09-27 | Cellule photovoltaique et procede de fabrication d'une telle cellule |
JP7511140A JPH08508368A (ja) | 1993-10-11 | 1994-09-27 | 光電池および光電池を製造するための方法 |
US08/446,628 US5589008A (en) | 1993-10-11 | 1994-09-27 | Photovoltaic cell and method for fabrication of said cell |
AU76506/94A AU7650694A (en) | 1993-10-11 | 1994-09-27 | Photovoltaic cell and method for fabrication of said cell |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR93/12246 | 1993-10-11 | ||
FR9312246A FR2711276B1 (fr) | 1993-10-11 | 1993-10-11 | Cellule photovoltaïque et procédé de fabrication d'une telle cellule. |
Publications (1)
Publication Number | Publication Date |
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WO1995010856A1 true WO1995010856A1 (fr) | 1995-04-20 |
Family
ID=9451834
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/CH1994/000192 WO1995010856A1 (fr) | 1993-10-11 | 1994-09-27 | Cellule photovoltaique et procede de fabrication d'une telle cellule |
Country Status (6)
Country | Link |
---|---|
US (1) | US5589008A (fr) |
EP (1) | EP0673549A1 (fr) |
JP (1) | JPH08508368A (fr) |
AU (1) | AU7650694A (fr) |
FR (1) | FR2711276B1 (fr) |
WO (1) | WO1995010856A1 (fr) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1113505A2 (fr) * | 1999-12-28 | 2001-07-04 | SANYO ELECTRIC Co., Ltd. | Dispositif à semiconducteur et sa méthode de fabrication |
WO2012105153A1 (fr) * | 2011-01-31 | 2012-08-09 | 三洋電機株式会社 | Élément de conversion photoélectrique |
WO2012105154A1 (fr) * | 2011-01-31 | 2012-08-09 | 三洋電機株式会社 | Procédé de fabrication d'un élément de conversion photoélectrique |
Families Citing this family (80)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6339013B1 (en) * | 1997-05-13 | 2002-01-15 | The Board Of Trustees Of The University Of Arkansas | Method of doping silicon, metal doped silicon, method of making solar cells, and solar cells |
DE19743692A1 (de) * | 1997-10-02 | 1999-04-08 | Zae Bayern | Multifunktionsschicht zur Verbesserung des Wirkungsgrades von kristallinen Dünnschicht Silizium Solarzellen |
ES2149126B1 (es) * | 1999-01-11 | 2001-05-16 | Univ Pais Vasco | Procedimiento para la fabricacion de celulas solares de silicio con estructura de campo retrodifusor, bajo espesor de base y metalizacion serigrafica. |
US6787692B2 (en) | 2000-10-31 | 2004-09-07 | National Institute Of Advanced Industrial Science & Technology | Solar cell substrate, thin-film solar cell, and multi-junction thin-film solar cell |
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US20080223436A1 (en) * | 2007-03-15 | 2008-09-18 | Guardian Industries Corp. | Back reflector for use in photovoltaic device |
EP1973167B1 (fr) * | 2007-03-19 | 2018-06-13 | Panasonic Intellectual Property Management Co., Ltd. | Dispositif photovoltaïque et son procédé de fabrication |
US7875486B2 (en) | 2007-07-10 | 2011-01-25 | Applied Materials, Inc. | Solar cells and methods and apparatuses for forming the same including I-layer and N-layer chamber cleaning |
KR20090075421A (ko) * | 2008-01-04 | 2009-07-08 | 삼성에스디아이 주식회사 | 태양 전지 |
US20090211627A1 (en) * | 2008-02-25 | 2009-08-27 | Suniva, Inc. | Solar cell having crystalline silicon p-n homojunction and amorphous silicon heterojunctions for surface passivation |
US8076175B2 (en) * | 2008-02-25 | 2011-12-13 | Suniva, Inc. | Method for making solar cell having crystalline silicon P-N homojunction and amorphous silicon heterojunctions for surface passivation |
US20090211623A1 (en) * | 2008-02-25 | 2009-08-27 | Suniva, Inc. | Solar module with solar cell having crystalline silicon p-n homojunction and amorphous silicon heterojunctions for surface passivation |
KR100976454B1 (ko) * | 2008-03-04 | 2010-08-17 | 삼성에스디아이 주식회사 | 태양 전지 및 이의 제조 방법 |
US20090242031A1 (en) * | 2008-03-27 | 2009-10-01 | Twin Creeks Technologies, Inc. | Photovoltaic Assembly Including a Conductive Layer Between a Semiconductor Lamina and a Receiver Element |
US20090242010A1 (en) * | 2008-03-27 | 2009-10-01 | Twin Creeks Technologies, Inc. | Method to Form a Photovoltaic Cell Comprising a Thin Lamina Bonded to a Discrete Receiver Element |
JP4418500B2 (ja) * | 2008-03-28 | 2010-02-17 | 三菱重工業株式会社 | 光電変換装置及びその製造方法 |
US20090286349A1 (en) * | 2008-05-13 | 2009-11-19 | Georgia Tech Research Corporation | Solar cell spin-on based process for simultaneous diffusion and passivation |
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US7858427B2 (en) * | 2009-03-03 | 2010-12-28 | Applied Materials, Inc. | Crystalline silicon solar cells on low purity substrate |
US20100132775A1 (en) * | 2009-03-05 | 2010-06-03 | Applied Materials, Inc. | Adhesion between azo and ag for the back contact in tandem junction cell by metal alloy |
US20100224243A1 (en) * | 2009-03-05 | 2010-09-09 | Applied Materials, Inc. | Adhesion between azo and ag for the back contact in tandem junction cell by metal alloy |
US20100243042A1 (en) * | 2009-03-24 | 2010-09-30 | JA Development Co., Ltd. | High-efficiency photovoltaic cells |
US8418418B2 (en) | 2009-04-29 | 2013-04-16 | 3Form, Inc. | Architectural panels with organic photovoltaic interlayers and methods of forming the same |
DE102009025977A1 (de) | 2009-06-16 | 2010-12-23 | Q-Cells Se | Solarzelle und Herstellungsverfahren einer Solarzelle |
JP2011003639A (ja) * | 2009-06-17 | 2011-01-06 | Kaneka Corp | 結晶シリコン系太陽電池とその製造方法 |
WO2011002086A1 (fr) * | 2009-07-03 | 2011-01-06 | 株式会社カネカ | Cellule solaire de type à silicium cristallin et son processus de fabrication |
US9911781B2 (en) | 2009-09-17 | 2018-03-06 | Sionyx, Llc | Photosensitive imaging devices and associated methods |
US9673243B2 (en) | 2009-09-17 | 2017-06-06 | Sionyx, Llc | Photosensitive imaging devices and associated methods |
JP5307688B2 (ja) * | 2009-10-27 | 2013-10-02 | 株式会社カネカ | 結晶シリコン系太陽電池 |
CN102725868A (zh) * | 2009-11-30 | 2012-10-10 | 京瓷株式会社 | 光电转换模块及其制造方法、以及发电装置 |
TW201121066A (en) * | 2009-12-14 | 2011-06-16 | Ind Tech Res Inst | Bificial solar cell |
US20120068289A1 (en) * | 2010-03-24 | 2012-03-22 | Sionyx, Inc. | Devices Having Enhanced Electromagnetic Radiation Detection and Associated Methods |
US8692198B2 (en) | 2010-04-21 | 2014-04-08 | Sionyx, Inc. | Photosensitive imaging devices and associated methods |
EP2583312A2 (fr) | 2010-06-18 | 2013-04-24 | Sionyx, Inc. | Dispositifs photosensibles à grande vitesse et procédés associés |
JP2012060080A (ja) * | 2010-09-13 | 2012-03-22 | Ulvac Japan Ltd | 結晶太陽電池及びその製造方法 |
US8513046B2 (en) * | 2010-10-07 | 2013-08-20 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and manufacturing method thereof |
US8815635B2 (en) * | 2010-11-05 | 2014-08-26 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of photoelectric conversion device |
US8558341B2 (en) * | 2010-12-17 | 2013-10-15 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion element |
US8268645B2 (en) | 2010-12-29 | 2012-09-18 | Twin Creeks Technologies, Inc. | Method and apparatus for forming a thin lamina |
US8101451B1 (en) | 2010-12-29 | 2012-01-24 | Twin Creeks Technologies, Inc. | Method to form a device including an annealed lamina and having amorphous silicon on opposing faces |
JP5884077B2 (ja) * | 2010-12-29 | 2016-03-15 | パナソニックIpマネジメント株式会社 | 太陽電池及び太陽電池モジュール |
US8173452B1 (en) | 2010-12-29 | 2012-05-08 | Twin Creeks Technologies, Inc. | Method to form a device by constructing a support element on a thin semiconductor lamina |
US8536448B2 (en) | 2010-12-29 | 2013-09-17 | Gtat Corporation | Zener diode within a diode structure providing shunt protection |
US8435804B2 (en) | 2010-12-29 | 2013-05-07 | Gtat Corporation | Method and apparatus for forming a thin lamina |
US8773018B2 (en) * | 2011-01-25 | 2014-07-08 | Paul F. Hensley | Tuning a dielectric barrier discharge cleaning system |
WO2012105146A1 (fr) * | 2011-01-31 | 2012-08-09 | 三洋電機株式会社 | Convertisseur photoélectrique et module de conversion photoélectrique |
US10011920B2 (en) | 2011-02-23 | 2018-07-03 | International Business Machines Corporation | Low-temperature selective epitaxial growth of silicon for device integration |
US9496308B2 (en) | 2011-06-09 | 2016-11-15 | Sionyx, Llc | Process module for increasing the response of backside illuminated photosensitive imagers and associated methods |
JP2013012606A (ja) * | 2011-06-29 | 2013-01-17 | Sanyo Electric Co Ltd | 太陽電池及びその製造方法 |
CN103946867A (zh) | 2011-07-13 | 2014-07-23 | 西奥尼克斯公司 | 生物计量成像装置和相关方法 |
JP2013030520A (ja) | 2011-07-27 | 2013-02-07 | Sanyo Electric Co Ltd | 太陽電池 |
DE102011052480A1 (de) * | 2011-08-08 | 2013-02-14 | Roth & Rau Ag | Solarzelle und Verfahren zur Herstellung einer Solarzelle |
KR101918737B1 (ko) * | 2012-03-19 | 2019-02-08 | 엘지전자 주식회사 | 태양 전지 |
US9064764B2 (en) | 2012-03-22 | 2015-06-23 | Sionyx, Inc. | Pixel isolation elements, devices, and associated methods |
CN102693893B (zh) * | 2012-04-28 | 2015-01-14 | 北京工业大学 | 一种利用调频的方式改善高频放电等离子体均匀性的方法 |
US9059212B2 (en) | 2012-10-31 | 2015-06-16 | International Business Machines Corporation | Back-end transistors with highly doped low-temperature contacts |
US8912071B2 (en) | 2012-12-06 | 2014-12-16 | International Business Machines Corporation | Selective emitter photovoltaic device |
US8642378B1 (en) | 2012-12-18 | 2014-02-04 | International Business Machines Corporation | Field-effect inter-digitated back contact photovoltaic device |
US9762830B2 (en) | 2013-02-15 | 2017-09-12 | Sionyx, Llc | High dynamic range CMOS image sensor having anti-blooming properties and associated methods |
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WO2014209421A1 (fr) | 2013-06-29 | 2014-12-31 | Sionyx, Inc. | Régions texturées formées de tranchées peu profondes et procédés associés. |
KR20150114792A (ko) | 2014-04-02 | 2015-10-13 | 한국에너지기술연구원 | 초박형 hit 태양전지 및 그 제조방법 |
US20150318412A1 (en) * | 2014-05-01 | 2015-11-05 | Jesse A. Frantz | Microstructured ZnO coatings for improved performance in Cu(In, Ga)Se2 photovoltaic devices |
US9525083B2 (en) * | 2015-03-27 | 2016-12-20 | Sunpower Corporation | Solar cell emitter region fabrication with differentiated P-type and N-type architectures and incorporating a multi-purpose passivation and contact layer |
JP6191925B2 (ja) * | 2015-10-15 | 2017-09-06 | パナソニックIpマネジメント株式会社 | 太陽電池モジュール |
TWI572050B (zh) * | 2015-11-10 | 2017-02-21 | 財團法人金屬工業研究發展中心 | 異質接面之矽基太陽能電池製作方法及直列式製作設備 |
CN109378347A (zh) * | 2018-09-19 | 2019-02-22 | 黄剑鸣 | 一种基于n型硅片的异质结太阳能电池及其制作方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0795603B2 (ja) * | 1990-09-20 | 1995-10-11 | 三洋電機株式会社 | 光起電力装置 |
US5213628A (en) * | 1990-09-20 | 1993-05-25 | Sanyo Electric Co., Ltd. | Photovoltaic device |
JP2994735B2 (ja) * | 1990-11-27 | 1999-12-27 | シャープ株式会社 | 太陽電池 |
-
1993
- 1993-10-11 FR FR9312246A patent/FR2711276B1/fr not_active Expired - Fee Related
-
1994
- 1994-09-27 US US08/446,628 patent/US5589008A/en not_active Expired - Lifetime
- 1994-09-27 EP EP94926766A patent/EP0673549A1/fr not_active Withdrawn
- 1994-09-27 WO PCT/CH1994/000192 patent/WO1995010856A1/fr not_active Application Discontinuation
- 1994-09-27 JP JP7511140A patent/JPH08508368A/ja not_active Ceased
- 1994-09-27 AU AU76506/94A patent/AU7650694A/en not_active Abandoned
Non-Patent Citations (6)
Title |
---|
D. FISCHER ET AL.: "Amorphous silicon solar cells with graded low-level doped i-layers characterised by bifacial measurements", 23RD IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, 10 May 1993 (1993-05-10), LOUISVILLE, USA, pages 878 - 884 * |
M. TANAKA ET AL.: "Development of a new heterojunction structure (ACJ-HIT) and its application to polycrystalline silicon solar cells", PROGRESS IN PHOTOVOLTAICS: RESEARCH AND APPLICATION, vol. 1, no. 2, April 1993 (1993-04-01), CHICHESTER, GB, pages 85 - 92 * |
M. TANAKA ET AL.: "Development of new a-Si/c-Si heterojunction solar cells: ACJ-HIT (Artificially Constructed Junction-Hetrojunction with Intrinsic Thin-Layer)", JAPANESE JOURNAL OF APPLIED PHYSICS., vol. 31 PT. 1, no. 11, November 1992 (1992-11-01), TOKYO JP, pages 3518 - 3522 * |
R. FLÜCKIGER ET AL.: "Microcrystalline silicon prepared with the very high frequency glow discharge technique for p-i-n solar cell applications", 11TH EC PHOTOVOLTAIC SOLAR ENERGY CONFERENCE, 12 October 1992 (1992-10-12), MONTREUX, CH, pages 617 - 620 * |
R. FLÜCKIGER ET AL.: "Preparation of undoped and doped microcrystalline silicon (uc-Si:H) by VHF-GD for p-i-n solar cells", 23RD IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, 10 May 1993 (1993-05-10), LOUISVILLE, USA, pages 839 - 844 * |
T. TAKAHAMA ET AL.: "High efficiency single- and poly-crystalline silicon solar cells using ACJ-HIT structure", 11TH E.C. PHOTOVOLTAIC SOLAR ENERGY CONFERENCE, 12 October 1992 (1992-10-12), MONTREUX, CH, pages 1057 - 1060 * |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1113505A2 (fr) * | 1999-12-28 | 2001-07-04 | SANYO ELECTRIC Co., Ltd. | Dispositif à semiconducteur et sa méthode de fabrication |
EP1113505A3 (fr) * | 1999-12-28 | 2004-01-21 | SANYO ELECTRIC Co., Ltd. | Dispositif à semiconducteur et sa méthode de fabrication |
WO2012105153A1 (fr) * | 2011-01-31 | 2012-08-09 | 三洋電機株式会社 | Élément de conversion photoélectrique |
WO2012105154A1 (fr) * | 2011-01-31 | 2012-08-09 | 三洋電機株式会社 | Procédé de fabrication d'un élément de conversion photoélectrique |
Also Published As
Publication number | Publication date |
---|---|
AU7650694A (en) | 1995-05-04 |
EP0673549A1 (fr) | 1995-09-27 |
US5589008A (en) | 1996-12-31 |
JPH08508368A (ja) | 1996-09-03 |
FR2711276A1 (fr) | 1995-04-21 |
FR2711276B1 (fr) | 1995-12-01 |
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