JP2013030520A - 太陽電池 - Google Patents
太陽電池 Download PDFInfo
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- JP2013030520A JP2013030520A JP2011163823A JP2011163823A JP2013030520A JP 2013030520 A JP2013030520 A JP 2013030520A JP 2011163823 A JP2011163823 A JP 2011163823A JP 2011163823 A JP2011163823 A JP 2011163823A JP 2013030520 A JP2013030520 A JP 2013030520A
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- Prior art keywords
- layer
- metal layer
- transparent conductive
- solar cell
- intermediate layer
- Prior art date
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 90
- 239000002184 metal Substances 0.000 claims abstract description 90
- 238000006243 chemical reaction Methods 0.000 claims abstract description 21
- 230000008033 biological extinction Effects 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims description 22
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 claims description 4
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 claims description 2
- 229910001634 calcium fluoride Inorganic materials 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 2
- 239000000395 magnesium oxide Substances 0.000 claims description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052748 manganese Inorganic materials 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 229910052718 tin Inorganic materials 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 description 24
- 230000007423 decrease Effects 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT® solar cells; solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
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- Engineering & Computer Science (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Sustainable Development (AREA)
- Photovoltaic Devices (AREA)
Abstract
【解決手段】太陽電池1は、光電変換部10と、金属層17と、中間層20とを備えている。光電変換部10は、表面に透明導電層15を含む。金属層17は、透明導電層15の上に配されている。中間層20は、金属層17と透明導電層15との間に配されている。中間層20は、金属層17よりも小さな消衰係数を有する。
【選択図】図1
Description
図1は、本発明の一実施形態に係る太陽電池1の略図的断面図である。図2は、太陽電池1の略図的裏面図である。
・第2の半導体層13:厚み9.1nmのアモルファスシリコン層
・透明導電層15:厚み61.5nmのWのドーパントがドープされた酸化インジウムからなる層
・中間層20:フッ化マグネシウム層
・金属層17:厚み400nmのAg層
・第2の半導体層13:厚み9.1nmのアモルファスシリコン層
・透明導電層15:Wのドーパントがドープされた酸化インジウムからなる層
・中間層20:厚み61.5nmのフッ化マグネシウム層
・金属層17:厚み400nmのAg層
10…光電変換部
11…基板
12…第1の半導体層
13…第2の半導体層
14…第1の透明導電層
15…第2の透明導電層
17…金属層
20…中間層
Claims (8)
- 表面に透明導電層を含む光電変換部と、
前記透明導電層の上に配された金属層と、
前記金属層と前記透明導電層との間に配されており、前記金属層よりも小さな消衰係数を有する中間層と、
を備える、太陽電池。 - 請求項1に記載の太陽電池において、
前記中間層は、前記金属層よりも電気抵抗率が高く、前記金属層の一部と前記透明導電層との間に配されている。 - 請求項2に記載の太陽電池において、
前記金属層が設けられた領域における前記中間層が設けられた領域の占める面積割合が20%〜80%である。 - 請求項2又は3に記載の太陽電池において、
前記金属層の厚みは、前記中間層の厚みよりも大きい。 - 請求項1〜4のいずれか一項に記載の太陽電池において、
前記中間層の屈折率は、前記金属層の屈折率よりも高く、前記透明導電層の屈折率よりも低い。 - 請求項1〜5のいずれか一項に記載の太陽電池において、
前記中間層は、フッ化マグネシウム、窒化シリコン、酸化アルミニウム、フッ化カルシウム及び酸化マグネシウムからなる群から選ばれた少なくとも一種からなる。 - 請求項1〜6のいずれか一項に記載の太陽電池において、
前記金属層は、Ag、Cu、Ni、Mn、Cr、Sn、Mg、W、Co、及びZnからなる群から選ばれた少なくとも一種からなる。 - 請求項1〜7のいずれか一項に記載の太陽電池において、
前記光電変換部は、結晶性シリコンならなる基板を含み、前記基板の厚みが300μm以下である。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011163823A JP2013030520A (ja) | 2011-07-27 | 2011-07-27 | 太陽電池 |
PCT/JP2012/056859 WO2013014967A1 (ja) | 2011-07-27 | 2012-03-16 | 太陽電池 |
EP12817558.5A EP2738819B1 (en) | 2011-07-27 | 2012-03-16 | Solar cell |
US14/159,677 US20140130861A1 (en) | 2011-07-27 | 2014-01-21 | Solar cell |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011163823A JP2013030520A (ja) | 2011-07-27 | 2011-07-27 | 太陽電池 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2013030520A true JP2013030520A (ja) | 2013-02-07 |
Family
ID=47600827
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011163823A Pending JP2013030520A (ja) | 2011-07-27 | 2011-07-27 | 太陽電池 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20140130861A1 (ja) |
EP (1) | EP2738819B1 (ja) |
JP (1) | JP2013030520A (ja) |
WO (1) | WO2013014967A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2015050161A1 (ja) * | 2013-10-04 | 2015-04-09 | 長州産業株式会社 | 光発電素子 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019179838A (ja) * | 2018-03-30 | 2019-10-17 | パナソニック株式会社 | 太陽電池セル、及び、太陽電池セルの製造方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07321362A (ja) * | 1994-05-24 | 1995-12-08 | Sanyo Electric Co Ltd | 光起電力装置 |
JPH08508368A (ja) * | 1993-10-11 | 1996-09-03 | ユニヴェルシテ ドゥ ヌーシャテル アンスティチュ ドゥ ミクロテクニク | 光電池および光電池を製造するための方法 |
JPH09237910A (ja) * | 1996-02-28 | 1997-09-09 | Sharp Corp | 太陽電池 |
JPH11220154A (ja) * | 1997-10-29 | 1999-08-10 | Canon Inc | 光起電力素子および光起電力素子モジュール |
WO2009116580A1 (ja) * | 2008-03-19 | 2009-09-24 | 三洋電機株式会社 | 太陽電池及びその製造方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5569332A (en) * | 1995-08-07 | 1996-10-29 | United Solar Systems Corporation | Optically enhanced photovoltaic back reflector |
EP0915523A3 (en) * | 1997-10-29 | 2005-11-02 | Canon Kabushiki Kaisha | A photovoltaic element having a back side transparent and electrically conductive layer with a light incident side surface region having a specific cross section and a module comprising said photovoltaic element |
US7994420B2 (en) * | 2004-07-07 | 2011-08-09 | Saint-Gobain Glass France | Photovoltaic solar cell and solar module |
DE102004032810B4 (de) * | 2004-07-07 | 2009-01-08 | Saint-Gobain Glass Deutschland Gmbh | Photovoltaische Solarzelle mit einer Schicht mit Licht streuenden Eigenschaften und Solarmodul |
WO2008059857A1 (fr) * | 2006-11-17 | 2008-05-22 | Kaneka Corporation | Dispositif de conversion photoélectrique en film mince |
JP2009231505A (ja) * | 2008-03-21 | 2009-10-08 | Sanyo Electric Co Ltd | 太陽電池 |
JP5535709B2 (ja) * | 2010-03-19 | 2014-07-02 | 三洋電機株式会社 | 太陽電池、その太陽電池を用いた太陽電池モジュール及び太陽電池の製造方法 |
-
2011
- 2011-07-27 JP JP2011163823A patent/JP2013030520A/ja active Pending
-
2012
- 2012-03-16 EP EP12817558.5A patent/EP2738819B1/en active Active
- 2012-03-16 WO PCT/JP2012/056859 patent/WO2013014967A1/ja active Application Filing
-
2014
- 2014-01-21 US US14/159,677 patent/US20140130861A1/en not_active Abandoned
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08508368A (ja) * | 1993-10-11 | 1996-09-03 | ユニヴェルシテ ドゥ ヌーシャテル アンスティチュ ドゥ ミクロテクニク | 光電池および光電池を製造するための方法 |
JPH07321362A (ja) * | 1994-05-24 | 1995-12-08 | Sanyo Electric Co Ltd | 光起電力装置 |
JPH09237910A (ja) * | 1996-02-28 | 1997-09-09 | Sharp Corp | 太陽電池 |
JPH11220154A (ja) * | 1997-10-29 | 1999-08-10 | Canon Inc | 光起電力素子および光起電力素子モジュール |
WO2009116580A1 (ja) * | 2008-03-19 | 2009-09-24 | 三洋電機株式会社 | 太陽電池及びその製造方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2015050161A1 (ja) * | 2013-10-04 | 2015-04-09 | 長州産業株式会社 | 光発電素子 |
JP2015073057A (ja) * | 2013-10-04 | 2015-04-16 | 長州産業株式会社 | 光発電素子 |
Also Published As
Publication number | Publication date |
---|---|
EP2738819A1 (en) | 2014-06-04 |
WO2013014967A1 (ja) | 2013-01-31 |
EP2738819A4 (en) | 2015-04-08 |
US20140130861A1 (en) | 2014-05-15 |
EP2738819B1 (en) | 2018-05-30 |
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