JP2017520928A - 太陽電池セル - Google Patents
太陽電池セル Download PDFInfo
- Publication number
- JP2017520928A JP2017520928A JP2016576064A JP2016576064A JP2017520928A JP 2017520928 A JP2017520928 A JP 2017520928A JP 2016576064 A JP2016576064 A JP 2016576064A JP 2016576064 A JP2016576064 A JP 2016576064A JP 2017520928 A JP2017520928 A JP 2017520928A
- Authority
- JP
- Japan
- Prior art keywords
- region
- electrical contacts
- conductive material
- side electrical
- solar cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004020 conductor Substances 0.000 claims abstract description 95
- 238000002161 passivation Methods 0.000 claims abstract description 30
- 239000000463 material Substances 0.000 claims abstract description 29
- 230000008878 coupling Effects 0.000 claims abstract description 27
- 238000010168 coupling process Methods 0.000 claims abstract description 27
- 238000005859 coupling reaction Methods 0.000 claims abstract description 27
- 230000003287 optical effect Effects 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 239000004065 semiconductor Substances 0.000 claims abstract description 11
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 229910001092 metal group alloy Inorganic materials 0.000 claims description 4
- 239000002105 nanoparticle Substances 0.000 claims description 4
- LKJPSUCKSLORMF-UHFFFAOYSA-N Monolinuron Chemical compound CON(C)C(=O)NC1=CC=C(Cl)C=C1 LKJPSUCKSLORMF-UHFFFAOYSA-N 0.000 claims 1
- 230000031700 light absorption Effects 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 88
- 238000000034 method Methods 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 239000012943 hotmelt Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT® solar cells; solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Abstract
Description
Claims (14)
- 光入射用の表側(11)と、前記表側(11)とは反対に位置する裏側(12)とを有する太陽電池セル(1,1a,1b,1c)であって、
前記太陽電池セル(1,1a,1b,1c)は、
第1導電型又は前記第1導電型とは反対の第2導電型の結晶性半導体基板(10)と、
少なくとも1つのパッシベーション層(2)と、前記第1導電型の少なくとも1つの導電層(3)とによって形成された表側パッシベーション領域(20)と、
少なくとも1つのパッシベーション層(7)と、前記第2導電型の少なくとも1つの導電層(8)とによって形成された裏側パッシベーション領域(30)と、
単一の表側導電性材料(4)と、前記表側導電性材料(4)の上面に形成された複数の表側電気コンタクト(6)のパターンとによって形成された表側コンタクトと、
前記太陽電池セル(1,1a,1b,1c)の前記表側(11)に設けられた少なくとも1つの表側光結合層(5)と、
前記表側コンタクトの反対側に位置しており、裏側導電性材料(9)と、前記裏側導電性材料(9)の上に形成された少なくとも1つの裏側電気コンタクト(14,14a,14b)とによって形成された裏側コンタクトと、
を有する太陽電池セル(1,1a,1b,1c)において、
前記表側導電性材料(4)は、前記複数の表側電気コンタクト(6)同士間の領域(4b)及び/又は前記複数の表側電気コンタクト(6)以外の領域(4b)において、前記表側電気コンタクト(6)の下方の領域(4a)よりも薄くなっている、
ことを特徴とする太陽電池セル(1,1a,1b,1c)。 - 前記表側導電性材料(4)は、前記複数の表側電気コンタクト(6)同士間の領域(4b)及び/又は前記複数の表側電気コンタクト(6)以外の領域(4b)には存在しておらず、前記複数の表側電気コンタクト(6)の下方の領域(4a)にのみ配置されている、
請求項1記載の太陽電池セル。 - 前記太陽電池セル(1,1a,1b,1c)のエミッタは、前記太陽電池セル(1,1a,1b,1c)の前記裏側(12)に位置する、
請求項1又は2記載の太陽電池セル。 - 前記裏側導電性材料(9)は、単一の材料であり、所定の領域(9a)において局所的に増加された厚さを有しており、
少なくとも1つの裏側光結合層(13)は、増加された厚さを有する前記領域(9a)同士間にのみ設けられている、
請求項1から3の少なくとも1項記載の太陽電池セル。 - 前記裏側導電性材料(9)は、前記少なくとも1つの裏側光結合層(13)の下方には設けられていない、
請求項4記載の太陽電池セル。 - 前記少なくとも1つの裏側電気コンタクトは、裏側電気コンタクト(14a)のパターンを含み、
前記裏側電気コンタクト(14a)は、前記裏側導電性材料(9)の、局所的に増加された厚さを有する前記領域(9a)にのみ設けられている、
請求項4又は5記載の太陽電池セル。 - 前記少なくとも1つの裏側電気コンタクトは、前記少なくとも1つの裏側光結合層(13)を少なくとも部分的に覆うように延在する裏側電気コンタクト層(14b)を含む、
請求項4又は5記載の太陽電池セル。 - 前記少なくとも1つの導電層(3)は、前記複数の表側電気コンタクト(6)同士間の領域(3b)及び/又は前記複数の表側電気コンタクト(6)以外の領域(3b)において、前記複数の表側電気コンタクト(6)の下方の領域(3a)よりも薄くなっており、
及び/又は、
前記少なくとも1つの導電層(8)は、前記裏側電気コンタクト(14a)同士間の領域(8b)及び/又は前記裏側電気コンタクト(14a)以外の領域(8b)において、前記裏側電気コンタクト(14a)の下方の領域(8a)よりも薄くなっており、
及び/又は、
前記少なくとも1つの導電層(8)は、前記裏側導電性材料(9)の局所的に厚さが増加された領域(9a)同士間の領域(8b)及び/又は前記局所的に厚さが増加された領域(9a)以外の領域(8b)において、前記局所的に厚さが増加された領域(9a)の下方の領域(8a)よりも薄くなっている、
請求項1から7の少なくとも1項記載の太陽電池セル。 - 前記複数の表側電気コンタクト(6)の材料及び/又は前記裏側電気コンタクト(14,14a)の材料は、少なくとも1つの導電性酸化物、少なくとも1つの金属、少なくとも1つの金属合金、少なくとも1つの導電性化合物、又は、これらの導電性材料のうちの少なくとも2つの材料の組み合わせを含む、
請求項1から8の少なくとも1項記載の太陽電池セル。 - 前記少なくとも1つの表側光結合層(5)の材料及び/又は前記少なくとも1つの裏側光結合層(13)の材料は、SiNx、SiOx、SiOxNy、AlOx、AlNx、TiOx、MgFx、導電性酸化物、ナノ粒子含有層、又は、これらの材料のうちの少なくとも2つの材料の組み合わせ、を含む材料群のうちの少なくとも1つの材料から選択されている、
請求項1から9の少なくとも1項記載の太陽電池セル。 - 前記表側導電性材料(4)及び/又は前記裏側導電性材料(9)は、透明導電性酸化物、金属、金属合金、又は、導電性酸化物を含む材料群のうちの1つの材料から選択されている、
請求項1から10の少なくとも1項記載の太陽電池セル。 - 前記表側導電性材料(4,4b)及び/又は前記裏側導電性材料(9,9b)は、前記複数の表側電気コンタクト(6)同士間の領域及び/又は前記複数の表側電気コンタクト(6)以外の領域において、及び/又は、前記裏側電気コンタクト(14a)同士間の領域及び/又は前記裏側電気コンタクト(14a)以外の領域において、0〜150nmの間の厚さを有する、
請求項1から11の少なくとも1項記載の太陽電池セル。 - 前記表側導電性材料(4,4b)及び/又は前記裏側導電性材料(9,9b)は、前記複数の表側電気コンタクト(6)同士間の領域及び/又は前記複数の表側電気コンタクト(6)以外の領域において、及び/又は、前記裏側電気コンタクト(14a)同士間の領域及び/又は前記裏側電気コンタクト(14a)以外の領域において、0〜70nmの間の厚さを有する、
請求項12記載の太陽電池セル。 - 前記表側導電性材料(4,4b)及び/又は前記裏側導電性材料(9,9b)は、前記複数の表側電気コンタクト(6)同士間の領域及び/又は前記複数の表側電気コンタクト(6)以外の領域において、及び/又は、前記裏側電気コンタクト(14a)同士間の領域及び/又は前記裏側電気コンタクト(14a)以外の領域において、0〜30nmの間の厚さを有する、
請求項12又は13記載の太陽電池セル。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP14175329.3A EP2963691B1 (en) | 2014-07-01 | 2014-07-01 | Solar cell |
EP14175329.3 | 2014-07-01 | ||
PCT/IB2015/054895 WO2016001828A1 (en) | 2014-07-01 | 2015-06-30 | Solar cell |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2017520928A true JP2017520928A (ja) | 2017-07-27 |
Family
ID=51033040
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016576064A Pending JP2017520928A (ja) | 2014-07-01 | 2015-06-30 | 太陽電池セル |
Country Status (10)
Country | Link |
---|---|
US (1) | US20170162725A1 (ja) |
EP (1) | EP2963691B1 (ja) |
JP (1) | JP2017520928A (ja) |
KR (1) | KR20170024103A (ja) |
CN (1) | CN106663715A (ja) |
EA (1) | EA032130B1 (ja) |
ES (1) | ES2759328T3 (ja) |
HU (1) | HUE047530T2 (ja) |
TW (1) | TWI603494B (ja) |
WO (1) | WO2016001828A1 (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10396219B2 (en) | 2016-06-16 | 2019-08-27 | Arizona Board Of Regents On Behalf Of Arizona State University | Transparent conductive oxide in silicon heterojunction solar cells |
EP3493274A1 (de) * | 2017-12-04 | 2019-06-05 | Bengbu Design & Research Institute for Glass Industry | Dünnschichtsolarmodul mit verbessertem shunt-widerstand |
CN110797418A (zh) * | 2018-08-03 | 2020-02-14 | 国家电投集团科学技术研究院有限公司 | 硅异质结太阳电池的铜合金电极的制备方法 |
CN109950354A (zh) * | 2019-03-26 | 2019-06-28 | 天合光能股份有限公司 | 一种同质-异质结太阳能电池及其制备方法 |
CN114005888A (zh) * | 2021-12-30 | 2022-02-01 | 杭州晶宝新能源科技有限公司 | 一种太阳能电池及其制备方法 |
NL2031897B1 (en) * | 2022-05-17 | 2023-11-24 | Univ Delft Tech | Localized passivated contacts for Solar Cells |
FR3139666A1 (fr) | 2022-09-09 | 2024-03-15 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Cellule photovoltaique a contacts passives en double face et comportant des portions d’otc localisees sous les metallisations avant |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2669952A1 (en) * | 2012-06-01 | 2013-12-04 | Roth & Rau AG | Photovoltaic device and method of manufacturing same |
WO2014054600A1 (ja) * | 2012-10-02 | 2014-04-10 | 株式会社カネカ | 結晶シリコン太陽電池の製造方法、太陽電池モジュールの製造方法、結晶シリコン太陽電池並びに太陽電池モジュール |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3557148B2 (ja) * | 2000-02-21 | 2004-08-25 | 三洋電機株式会社 | 太陽電池モジュール |
JP2004214442A (ja) * | 2003-01-06 | 2004-07-29 | Sanyo Electric Co Ltd | 光起電力装置およびその製造方法 |
DE102009044052A1 (de) * | 2009-09-18 | 2011-03-24 | Schott Solar Ag | Kristalline Solarzelle, Verfahren zur Herstellung einer solchen sowie Verfahren zur Herstellung eines Solarzellenmoduls |
KR101046219B1 (ko) * | 2010-04-02 | 2011-07-04 | 엘지전자 주식회사 | 선택적 에미터를 갖는 태양전지 |
KR101714779B1 (ko) * | 2010-10-11 | 2017-03-09 | 엘지전자 주식회사 | 태양전지 및 이의 제조 방법 |
US20120318336A1 (en) * | 2011-06-17 | 2012-12-20 | International Business Machines Corporation | Contact for silicon heterojunction solar cells |
WO2013062727A1 (en) * | 2011-10-24 | 2013-05-02 | Applied Materials, Inc. | Method and apparatus of removing a passivation film and improving contact resistance in rear point contact solar cells |
JP5325349B1 (ja) | 2011-11-22 | 2013-10-23 | 株式会社カネカ | 太陽電池およびその製造方法、ならびに太陽電池モジュール |
WO2013106827A1 (en) * | 2012-01-13 | 2013-07-18 | Crystal Solar, Inc. | Silicon heterojunction solar cells |
-
2014
- 2014-07-01 ES ES14175329T patent/ES2759328T3/es active Active
- 2014-07-01 EP EP14175329.3A patent/EP2963691B1/en active Active
- 2014-07-01 HU HUE14175329A patent/HUE047530T2/hu unknown
-
2015
- 2015-06-30 WO PCT/IB2015/054895 patent/WO2016001828A1/en active Application Filing
- 2015-06-30 KR KR1020177002909A patent/KR20170024103A/ko not_active Application Discontinuation
- 2015-06-30 CN CN201580035451.1A patent/CN106663715A/zh active Pending
- 2015-06-30 US US15/323,492 patent/US20170162725A1/en not_active Abandoned
- 2015-06-30 JP JP2016576064A patent/JP2017520928A/ja active Pending
- 2015-06-30 EA EA201692520A patent/EA032130B1/ru not_active IP Right Cessation
- 2015-07-01 TW TW104121344A patent/TWI603494B/zh active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2669952A1 (en) * | 2012-06-01 | 2013-12-04 | Roth & Rau AG | Photovoltaic device and method of manufacturing same |
WO2014054600A1 (ja) * | 2012-10-02 | 2014-04-10 | 株式会社カネカ | 結晶シリコン太陽電池の製造方法、太陽電池モジュールの製造方法、結晶シリコン太陽電池並びに太陽電池モジュール |
Also Published As
Publication number | Publication date |
---|---|
KR20170024103A (ko) | 2017-03-06 |
EA201692520A1 (ru) | 2017-06-30 |
CN106663715A (zh) | 2017-05-10 |
US20170162725A1 (en) | 2017-06-08 |
WO2016001828A1 (en) | 2016-01-07 |
EP2963691B1 (en) | 2019-10-16 |
EP2963691A1 (en) | 2016-01-06 |
EA032130B1 (ru) | 2019-04-30 |
TW201622166A (zh) | 2016-06-16 |
HUE047530T2 (hu) | 2020-04-28 |
TWI603494B (zh) | 2017-10-21 |
ES2759328T3 (es) | 2020-05-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10573770B2 (en) | Solar cell and method of manufacturing the same | |
JP5848421B2 (ja) | 太陽電池及びその製造方法 | |
US10084107B2 (en) | Transparent conducting oxide for photovoltaic devices | |
JP6106403B2 (ja) | 光電変換素子及び光電変換素子の製造方法 | |
JP2019208079A (ja) | 高効率太陽電池構造体および製造方法 | |
JP2017520928A (ja) | 太陽電池セル | |
US20100084013A1 (en) | Solar cell | |
JP2015525961A (ja) | 太陽電池 | |
JP3205613U (ja) | ヘテロ接合太陽電池構造 | |
KR20130016848A (ko) | Hit 태양전지 | |
KR20150013306A (ko) | 헤테로접합 태양 전지 및 그 제조 방법 | |
US20110155229A1 (en) | Solar cell and method for manufacturing the same | |
US20110036392A1 (en) | Thin-film solar cell module and a manufacturing method thereof | |
KR101322628B1 (ko) | 태양전지의 후면반사막 형성방법, 이를 포함하는후면전극부 형성방법 및 태양전지의 제조방법 | |
KR101172619B1 (ko) | Ain 패시베이션막을 구비하는 실리콘 태양전지 | |
US11862738B2 (en) | Photovoltaic cell with passivated contacts and with non-reflective coating | |
CN114068750A (zh) | 钙钛矿/硅异质结双面叠层太阳能电池及其制备方法和太阳能系统 | |
CN117238979A (zh) | 异质结太阳能电池及其制作方法、光伏组件及光伏系统 | |
JP2015228526A (ja) | 太陽電池モジュール | |
KR20130017558A (ko) | 태양 전지 | |
KR20100136638A (ko) | 태양 전지 및 그 제조 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20180312 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20190129 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20190304 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190530 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20191105 |