JP6106403B2 - 光電変換素子及び光電変換素子の製造方法 - Google Patents
光電変換素子及び光電変換素子の製造方法 Download PDFInfo
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- 238000006243 chemical reaction Methods 0.000 title claims description 68
- 238000004519 manufacturing process Methods 0.000 title claims description 25
- 239000010410 layer Substances 0.000 claims description 393
- 239000004065 semiconductor Substances 0.000 claims description 201
- 239000000758 substrate Substances 0.000 claims description 99
- 238000002161 passivation Methods 0.000 claims description 89
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 87
- 239000012535 impurity Substances 0.000 claims description 42
- 238000000034 method Methods 0.000 claims description 38
- 229910052751 metal Inorganic materials 0.000 claims description 27
- 239000002184 metal Substances 0.000 claims description 27
- 230000005684 electric field Effects 0.000 claims description 22
- 239000011241 protective layer Substances 0.000 claims description 20
- 238000000059 patterning Methods 0.000 claims description 13
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- 230000003667 anti-reflective effect Effects 0.000 claims 1
- 239000010408 film Substances 0.000 description 26
- 230000008569 process Effects 0.000 description 20
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 19
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 230000031700 light absorption Effects 0.000 description 7
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 239000005083 Zinc sulfide Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 229910052984 zinc sulfide Inorganic materials 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 229910021478 group 5 element Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- ZZJYHWQWYHSJGL-UHFFFAOYSA-N [O-2].[Nd+3].[In+3].[O-2].[O-2] Chemical compound [O-2].[Nd+3].[In+3].[O-2].[O-2] ZZJYHWQWYHSJGL-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- GGHJPYSCFMCCFG-UHFFFAOYSA-N gadolinium(3+) indium(3+) oxygen(2-) Chemical compound [O--].[O--].[O--].[In+3].[Gd+3] GGHJPYSCFMCCFG-UHFFFAOYSA-N 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000007646 gravure printing Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- HJZPJSFRSAHQNT-UHFFFAOYSA-N indium(3+) oxygen(2-) zirconium(4+) Chemical compound [O-2].[Zr+4].[In+3] HJZPJSFRSAHQNT-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000007645 offset printing Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000011197 physicochemical method Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- -1 regions Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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Description
120、320 ギャップパッシベーション層
120a パッシベーション層
130、330 前面保護層
140、340 前面電界層
150、350 反射防止膜
161、361 第1非晶質シリコン層
162、362 第1導電型半導体層
163、363 第1透明導電層
171、371 第2非晶質シリコン層
172、372 第2導電型半導体層
173、373 第2透明導電層
180、380 第1金属電極
190、390 第2金属電極
Claims (20)
- 結晶質の半導体基板と、
前記半導体基板の背面の第1領域に形成され、第1不純物を含む非晶質の第1導電型半導体層と、
前記半導体基板の背面の第2領域に形成され、前記第1不純物と異なる第2不純物を含む非晶質の第2導電型半導体層と、
前記半導体基板の背面上の前記第1領域と前記第2領域との間の第3領域に備えられるギャップパッシベーション層と、を備え、
前記第1領域に形成された第1導電型半導体層、および前記第2領域に形成された第2導電型半導体層の各々は、前記第3領域には横方向に延伸されておらず、かつ
前記ギャップパッシベーション層上には、前記第1領域に形成された第1導電型半導体層とは異なる高さに、前記第1導電型半導体層が形成される光電変換素子。 - 前記ギャップパッシベーション層上には、全域にわたって前記第1導電型半導体層が備えられる請求項1に記載の光電変換素子。
- 前記半導体基板の少なくともいずれか一面はテクスチャリングされた請求項1又は2に記載の光電変換素子。
- 前記半導体基板と前記第1導電型半導体層との間に形成された第1非晶質シリコン層と、
前記第1導電型半導体層上に形成された第1透明導電層と、
前記第1透明導電層上に形成された第1金属電極と、を備える請求項1〜3のいずれか一項に記載の光電変換素子。 - 前記ギャップパッシベーション層の厚さは、前記第1非晶質シリコン層、前記第1導電型半導体層、及び前記第1透明導電層の厚さの和より厚い請求項4に記載の光電変換素子。
- 前記ギャップパッシベーション層上には、全域にわたって前記第1非晶質シリコン層、前記第1導電型半導体層、及び前記第1透明導電層のみが備えられる請求項4又は5に記載の光電変換素子。
- 前記半導体基板と前記第2導電型半導体層との間に形成された第2非晶質シリコン層と、
前記第2導電型半導体層上に形成された第2透明導電層と、
前記第2透明導電層上に形成された第2金属電極と、をさらに備える請求項4〜6のいずれか一項に記載の光電変換素子。 - 前記ギャップパッシベーション層の厚さは、前記第2非晶質シリコン層、前記第2導電型半導体層、及び前記第2透明導電層の厚さの和より厚い請求項7に記載の光電変換素子。
- 前記半導体基板の前面に形成された前面保護層と、
前記半導体基板の前面に形成された前面電界層と、
前記前面保護層及び前記前面電界層上に形成された反射防止膜と、を備える請求項1〜8のいずれか一項に記載の光電変換素子。 - 前記ギャップパッシベーション層は、
SiOxとSiNxとの二重層、またはSiOxとSiONとの二重層を含む請求項1〜9のいずれか一項に記載の光電変換素子。 - 前記第1非晶質シリコン層、及び前記第2非晶質シリコン層のうち少なくともいずれか一つは、20Å(2nm)〜100Å(10nm)の厚さに形成される請求項7又は8に記載の光電変換素子。
- 前記第1透明導電層、及び前記第2透明導電層のうち少なくともいずれか一つは、200Å(20nm)〜1000Å(100nm)の厚さに形成される請求項7又は8に記載の光電変換素子。
- 前記第1導電型半導体層及び前記第2導電型半導体層のうち少なくともいずれか一つは、30Å(3nm)〜100Å(10nm)の厚さに形成される請求項1〜12のいずれか一項に記載の光電変換素子。
- 前記第1導電型半導体層はp型であり、前記第2導電型半導体層はn型である請求項1〜13のいずれか一項に記載の光電変換素子。
- 前記第1導電型半導体層はn型であり、前記第2導電型半導体層はp型である請求項1〜13のいずれか一項に記載の光電変換素子。
- 前記第1領域と前記第2領域とは、交互に備えられ、前記ギャップパッシベーション層を介して互いに離隔されている請求項1〜15のいずれか一項に記載の光電変換素子。
- 半導体基板の背面にパッシベーション層を形成する段階と、
前記パッシベーション層に第1パターニングを行うことで、前記半導体基板の背面に第1領域を定義する段階と、
前記第1領域、および前記パッシベーション層の上に、第1非晶質シリコン層、第1導電型半導体層、及び第1透明導電層を順次形成する段階と、
前記第1領域、及び前記第1領域の両側に備えられた前記パッシベーション層の一部を覆うようにエッチレジストを形成する段階と、
前記エッチレジストをマスクとして、前記半導体基板の背面に形成された前記パッシベーション層、前記第1非晶質シリコン層、前記第1導電型半導体層、及び前記第1透明導電層に第2パターニングを行うことで、前記パッシベーション層に第2領域を定義する段階と、
前記半導体基板の背面上の前記第2領域に、第2非晶質シリコン層、第2導電型半導体層、及び第2透明導電層を順次形成する段階と、
前記エッチレジストを除去し、前記半導体基板の背面上の前記第1領域と前記第2領域との間の第3領域にギャップパッシベーション層を形成し、前記第1領域に形成された第1導電型半導体層、および前記第2領域に形成された第2導電型半導体層の各々は、前記第3領域までは横方向に延伸されないようにする段階と、を含む光電変換素子の製造方法。 - 前記パッシベーション層を形成する段階は、
SiOx及びSiNxの二重層を形成する段階、またはSiOx及びSiOxNyの二重層を形成する段階を含む請求項17に記載の光電変換素子の製造方法。 - 前記第1領域と前記第2領域とは交互に備えられ、互いに離隔している請求項17又は18に記載の光電変換素子の製造方法。
- 前記半導体基板をテクスチャリングする段階をさらに含む請求項17〜19のいずれか一項に記載の光電変換素子の製造方法。
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9018517B2 (en) * | 2011-11-07 | 2015-04-28 | International Business Machines Corporation | Silicon heterojunction photovoltaic device with wide band gap emitter |
JP2013125890A (ja) * | 2011-12-15 | 2013-06-24 | Sharp Corp | 光電変換素子およびその製造方法 |
KR20160046887A (ko) | 2013-08-27 | 2016-04-29 | 헤일로우 뉴로 아이엔씨. | 전기 자극을 사용자에게 제공하기 위한 방법 및 시스템 |
US9782585B2 (en) | 2013-08-27 | 2017-10-10 | Halo Neuro, Inc. | Method and system for providing electrical stimulation to a user |
WO2015031510A1 (en) | 2013-08-27 | 2015-03-05 | Halo Neuro, Inc. | Electrode system for electrical stimulation |
KR101622090B1 (ko) | 2013-11-08 | 2016-05-18 | 엘지전자 주식회사 | 태양 전지 |
KR101867855B1 (ko) * | 2014-03-17 | 2018-06-15 | 엘지전자 주식회사 | 태양 전지 |
KR101661948B1 (ko) * | 2014-04-08 | 2016-10-04 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
NL2014040B1 (en) * | 2014-12-23 | 2016-10-12 | Stichting Energieonderzoek Centrum Nederland | Method of making a curent collecting grid for solar cells. |
CN106159030B (zh) * | 2015-03-24 | 2017-11-21 | 英属开曼群岛商精曜有限公司 | 太阳能电池的制作方法 |
JPWO2017056934A1 (ja) * | 2015-09-29 | 2018-07-12 | シャープ株式会社 | バスバー電極、太陽電池セル、および太陽電池モジュール |
CN108290037B (zh) | 2015-10-26 | 2021-10-08 | 福禄神经学公司 | 电极定位系统及方法 |
CN108778409B (zh) | 2016-02-08 | 2022-04-08 | 哈洛纽罗公司 | 用于改善电刺激的提供的方法和系统 |
CN109314152B (zh) | 2016-06-15 | 2022-04-05 | 株式会社钟化 | 太阳能电池及其制造方法以及太阳能电池模块 |
US10485443B2 (en) | 2016-06-20 | 2019-11-26 | Halo Neuro, Inc. | Electrical interface system |
US10525255B2 (en) | 2017-03-08 | 2020-01-07 | Halo Neuro, Inc. | System for electrical stimulation |
CN107093649B (zh) * | 2017-03-28 | 2019-08-30 | 浙江正泰太阳能科技有限公司 | 一种hjt光伏电池的制备方法 |
US10507324B2 (en) | 2017-11-17 | 2019-12-17 | Halo Neuro, Inc. | System and method for individualizing modulation |
CN115985974B (zh) * | 2023-01-04 | 2024-07-05 | 隆基绿能科技股份有限公司 | 背接触太阳能电池及其制备方法、光伏组件 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4745078A (en) | 1986-01-30 | 1988-05-17 | Siemens Aktiengesellschaft | Method for integrated series connection of thin film solar cells |
JPH0622245B2 (ja) | 1986-05-02 | 1994-03-23 | 富士ゼロックス株式会社 | 薄膜トランジスタの製造方法 |
EP0334111A1 (de) | 1988-03-24 | 1989-09-27 | Siemens Aktiengesellschaft | Verfahren zur integrierten Serienverschaltung von Dickschichtsolarzellen sowie Verwendung dieses Verfahrens bei der Herstellung einer Tandem-Solarzelle |
KR100366348B1 (ko) | 2001-01-03 | 2002-12-31 | 삼성에스디아이 주식회사 | 실리콘 태양 전지의 제조 방법 |
EP1529317A2 (en) | 2002-08-06 | 2005-05-11 | Avecia Limited | Organic electronic devices |
CN100431177C (zh) * | 2003-09-24 | 2008-11-05 | 三洋电机株式会社 | 光生伏打元件及其制造方法 |
FR2880989B1 (fr) * | 2005-01-20 | 2007-03-09 | Commissariat Energie Atomique | Dispositif semi-conducteur a heterojonctions et a structure inter-digitee |
KR100756286B1 (ko) | 2005-03-16 | 2007-09-06 | 한국과학기술원 | 집적형 박막 태양전지 및 그 제조 방법 |
ES2624054T3 (es) | 2006-12-21 | 2017-07-12 | Hyet Energy Systems B.V. | Procedimiento para la fabricación de subcélulas solares a partir de una célula solar |
US20110041898A1 (en) * | 2009-08-19 | 2011-02-24 | Emcore Solar Power, Inc. | Back Metal Layers in Inverted Metamorphic Multijunction Solar Cells |
US9508890B2 (en) * | 2007-04-09 | 2016-11-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photovoltaics on silicon |
US20110000532A1 (en) * | 2008-01-30 | 2011-01-06 | Kyocera Corporation | Solar Cell Device and Method of Manufacturing Solar Cell Device |
JP2010147102A (ja) | 2008-12-16 | 2010-07-01 | Sharp Corp | 太陽電池セルの製造方法 |
KR101539047B1 (ko) * | 2008-12-24 | 2015-07-23 | 인텔렉츄얼 키스톤 테크놀로지 엘엘씨 | 광기전력 변환 소자 및 그의 제조방법 |
JP5294316B2 (ja) | 2009-01-05 | 2013-09-18 | シャープ株式会社 | 太陽電池素子の製造方法 |
CN102349166A (zh) | 2009-03-10 | 2012-02-08 | 三洋电机株式会社 | 太阳能电池的制造方法和太阳能电池 |
US8525018B2 (en) * | 2009-09-07 | 2013-09-03 | Lg Electronics Inc. | Solar cell |
KR20110087168A (ko) * | 2010-01-25 | 2011-08-02 | 삼성전자주식회사 | 태양 전지의 제조 방법 |
WO2011093329A1 (ja) * | 2010-01-26 | 2011-08-04 | 三洋電機株式会社 | 太陽電池及びその製造方法 |
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