JP5848421B2 - 太陽電池及びその製造方法 - Google Patents
太陽電池及びその製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 37
- 239000000758 substrate Substances 0.000 claims description 111
- 230000001681 protective effect Effects 0.000 claims description 88
- 238000000034 method Methods 0.000 claims description 50
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 31
- 230000005684 electric field Effects 0.000 claims description 25
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 19
- 239000012811 non-conductive material Substances 0.000 claims description 15
- 239000004020 conductor Substances 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 11
- 238000005229 chemical vapour deposition Methods 0.000 claims description 10
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 10
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 7
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 7
- 229910052725 zinc Inorganic materials 0.000 claims description 7
- 239000011701 zinc Substances 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 5
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 4
- 239000006117 anti-reflective coating Substances 0.000 claims description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 2
- 239000011241 protective layer Substances 0.000 claims description 2
- 230000008569 process Effects 0.000 description 28
- 239000010410 layer Substances 0.000 description 19
- 239000012535 impurity Substances 0.000 description 18
- 229910004298 SiO 2 Inorganic materials 0.000 description 14
- 238000002161 passivation Methods 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 11
- 239000000463 material Substances 0.000 description 10
- 238000004544 sputter deposition Methods 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052738 indium Inorganic materials 0.000 description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 5
- 239000007769 metal material Substances 0.000 description 5
- 238000007650 screen-printing Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000012670 alkaline solution Substances 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 230000002265 prevention Effects 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- 229910004205 SiNX Inorganic materials 0.000 description 3
- 239000003929 acidic solution Substances 0.000 description 3
- 230000002411 adverse Effects 0.000 description 3
- 229910052787 antimony Inorganic materials 0.000 description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 230000031700 light absorption Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000001579 optical reflectometry Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
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- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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- Y02E10/00—Energy generation through renewable energy sources
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- Y02E10/547—Monocrystalline silicon PV cells
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Description
背面保護膜140上に位置した複数のエミッタ部151は互いに離隔され、ほとんど平行に決定された方向に延長されている。各エミッタ部151は基板110の導電性タイプと反対である第2導電性タイプを有して基板110と異なる半導体、例えば、非晶質シリコン(a−Si)からなる。これにより、複数のエミッタ部151は基板110とp−n接合だけではなく異種接合(hetero junction)を形成する。
これら導電性金属物質の例はニッケル(Ni)、銅(Cu)、銀(Ag)、アルミニウム(Al)、錫(Sn)、亜鉛(Zn)、インジウム(In)、チタン(Ti)、金(Au)及びこれらの組合からなる群から選択された少なくとも一つでもよいが、他の導電性金属物質からなることがある。
図3は本発明の他の実施形態に係る太陽電池の部分断面図である。
図3で、図1と比べると同一である機能を遂行する構成要素に対しては図1と同一の図面符号を付与し、それに対する詳細な説明は省略する。
すなわち、図3を参照すれば、本実施形態に係る太陽電池10は複数の凹凸111を有する基板110の前面に順次位置する前面保護膜120と反射防止膜130、基板110の背面に位置した背面保護膜140、背面保護膜140上に互いに離隔されるように位置する複数のエミッタ部151と複数の背面電界部152、並びに、複数のエミッタ部151と複数の背面電界部152上にそれぞれ位置する複数の第1電極161と複数の第2電極162を備える。図1に示す太陽電池1と同一に、反射防止膜130は透明な伝導性物質からなる。
すなわち、図3を参照すれば、本実施形態に係る太陽電池10は複数の凹凸111を有する基板110の前面に順次位置する前面保護膜120と反射防止膜130、基板110の背面に位置した背面保護膜141、背面保護膜141上に互いに離隔されるように位置した複数のエミッタ部151と複数の背面電界部152、複数のエミッタ部151と複数の背面電界部152上にそれぞれ位置する複数の第1電極161と複数の第2電極162、並びに、複数のエミッタ部151及びその上部の複数の第1電極151と複数の背面電界部152及びその上部の複数の第2電極152の間に複数の絶縁部171を備える。
すなわち、図5を参照すれば、本実施形態に係る太陽電池20は複数の凹凸111を有する基板110の前面に順次位置する前面保護膜120と反射防止膜131、基板110の背面に位置する背面保護膜140、背面保護膜140上に互いに離隔されるように位置する複数のエミッタ部151と複数の背面電界部152、並びに、複数のエミッタ部151及び背面電界部152上にそれぞれ位置する複数の第1電極161及び複数の第2電極162を備える。この場合、反射防止膜131はZnO、ZnO:Al、ZnO:Bなどのような亜鉛系酸化物で形成された方がよい。
10 太陽電池
11 太陽電池
20 太陽電池
110 基板
111 凹凸
120 前面保護膜
130 反射防止膜
131 反射防止膜
133 凹凸
140 背面保護膜
141 背面保護膜
151 エミッタ部
152 背面電界部
155 第1不純物膜
156 第2不純物膜
161 第1電極
162 第2電極
170 絶縁部
171 絶縁部
180 テクスチャリング防止膜
Claims (14)
- 第1温度で第1導電性タイプの基板の第1面上に第1保護膜を形成する段階と、
第2温度で前記基板の上に反射防止膜を形成する段階と、
前記第1保護膜が形成された前記基板の第1面の反対面の第2面上に第2保護膜を形成する段階と、
前記第2保護膜の上に前記第1導電性タイプと反対である第2導電性タイプの複数のドーピング部を形成する段階と、
前記複数のドーピング部が形成されない前記第2保護膜の上に前記第1導電性タイプの複数の後面電界部を形成する段階と、
前記複数のドーピング部及び前記複数の後面電界部の上にそれぞれ複数の第1電極及び複数の第2電極を形成する段階と、
前記複数のドーピング部と前記複数の後面電界部との間の前記第2保護膜を除去する段階と、
前記複数のドーピング部と前記複数の後面電界部との間の前記第2保護膜が除去された前記基板の第2面の上に複数の絶縁部を形成する段階と、を含み、
前記第1温度は、前記第2温度と同一であるかまたは前記第2温度より高い、太陽電池の製造方法。 - 前記第1保護膜及び前記第2保護膜は非伝導性物質からなる、請求項1に記載の太陽電池の製造方法。
- 前記反射防止膜は、酸化インジウムスズ、錫系酸化物、亜鉛系酸化物及びこれらの混合物からなる群から選択された少なくとも一つの透明な伝導性物質で形成される、請求項1に記載の太陽電池の製造方法。
- 前記複数の絶縁部は化学的蒸着(CVD)法で形成される、請求項1に記載の太陽電池の製造方法。
- 前記非伝導性物質は、非晶質シリコン(a−Si)、シリコン酸化物(SiO 2 )または非晶質シリコン酸化物(a−SiO 2 )で形成される請求項2に記載の太陽電池の製造方法。
- 前記複数の絶縁部は非伝導性物質で形成される、請求項5に記載の太陽電池の製造方法。
- 前記反射防止膜の表面を蝕刻する段階をさらに含む、請求項1に記載の太陽電池の製造方法。
- 前記第1温度は約200℃−400℃である、請求項1に記載の太陽電池の製造方法。
- 前記第2温度は約200℃である、請求項1に記載の太陽電池の製造方法。
- 前記基板の表面を蝕刻する段階をさらに含み、
前記基板の表面は複数の第1凹凸を備える、請求項7に記載の太陽電池の製造方法。 - 前記基板側の前記反射防止膜の下部表面は複数の第2凹凸を備え、
前記基板と反対側の前記反射防止膜の上部表面は、前記複数の第2凹凸と、前記複数の第2凹凸の表面に複数の第3凹凸と、を備える、請求項10に記載の太陽電池の製造方法。 - 前記複数の第1凹凸と前記複数の第2凹凸とは同一の形状を有し、
前記複数の第3凹凸は、前記複数の第1凹凸及び第2凹凸より微細な形状を有する、請求項11に記載の太陽電池の製造方法。 - 前記基板と前記複数のドーピング部及び前記複数の後面電界部とは互いに異なる結晶度を有する、請求項1に記載の太陽電池の製造方法。
- 前記基板は結晶質シリコンからなり、前記複数のドーピング部及び前記複数の後面電界部は非晶質シリコンからなる、請求項13に記載の太陽電池の製造方法。
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