JP4540447B2 - 太陽電池および太陽電池の製造方法 - Google Patents
太陽電池および太陽電池の製造方法 Download PDFInfo
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- JP4540447B2 JP4540447B2 JP2004312140A JP2004312140A JP4540447B2 JP 4540447 B2 JP4540447 B2 JP 4540447B2 JP 2004312140 A JP2004312140 A JP 2004312140A JP 2004312140 A JP2004312140 A JP 2004312140A JP 4540447 B2 JP4540447 B2 JP 4540447B2
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- 238000000034 method Methods 0.000 title claims description 14
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 72
- 239000010703 silicon Substances 0.000 claims description 72
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 71
- 239000000758 substrate Substances 0.000 claims description 71
- 238000002161 passivation Methods 0.000 claims description 65
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 45
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 45
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 12
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 3
- 229910000077 silane Inorganic materials 0.000 claims description 3
- 239000010408 film Substances 0.000 description 155
- 239000007789 gas Substances 0.000 description 29
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 17
- 229910052814 silicon oxide Inorganic materials 0.000 description 15
- 239000002253 acid Substances 0.000 description 8
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 239000000969 carrier Substances 0.000 description 6
- 238000005215 recombination Methods 0.000 description 6
- 230000006798 recombination Effects 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 239000012808 vapor phase Substances 0.000 description 4
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000000572 ellipsometry Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 150000001639 boron compounds Chemical class 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- -1 phosphorus compound Chemical class 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Description
Jianhua Zhao, Aihaua Wang, Martin A.Green, ゛24.7% EFFICIENT PERL SILICON SOLAR CELLS AND OTHER HIGH EFFICIENCY SOLAR CELL AND MODULE RESEARCH AT THE UNIVERSITY OF NEW SOUTH WALES", Applied Physics Letters, Vol.44(12), pp.1163-1164 Jan Schmidt, Mark Kerr, Andres Cuevas, ゛Surface passivation of silicon solar cells using plasma-enhanced chemical-vapour-deposited SiN films and thin thermal SiO2/plasma SiN stacks", Semicond.Sci.Technol., 16(2001), pp.164-170
まず、250μmの厚みにスライスされた縦12.5cm×横12.5cmの正方形状のn型の単結晶シリコン基板からスライスダメージを除去するため、NaOH溶液によりこのシリコン基板の表面を厚み200μmまでエッチングした。次に、シリコン基板の受光面および裏面に酸化シリコン膜を形成し、この酸化シリコン膜を拡散マスクとした。次いで、シリコン基板の裏面の酸化シリコン膜に対してフォトリソグラフィにより耐酸性レジストをパターンニングし、露出している酸化シリコン膜をフッ酸によりエッチングした。そして、970℃の雰囲気で50分間、BBr3を気相拡散することによって、上記のエッチングされたシリコン基板の裏面に櫛形状のp+層を形成した。
シリコン基板の受光面上にパッシベーション膜を形成する際のRFパワー密度を140W/m2にしたこと以外は実施例1と同様にして太陽電池を製造した。この太陽電池の特性を調査した結果を表1に示す。この太陽電池の短絡電流密度(Jsc)は37.80mA/cm2であって、開放電圧(Voc)は0.651V、フィルファクタ(F.F)は0.776、最大電力(Pmax)は1.725Wであった。
SiH4ガスとNH3ガスとを流量比(NH3/SiH4)が3となるようにして導入し、シリコン基板の受光面上にパッシベーション膜として屈折率が2.2の窒化シリコン膜を膜厚37nm形成した。その後、SiH4ガスとNH3ガスとの流量比(NH3/SiH4)を変更することなく、パッシベーション膜上に反射防止膜として屈折率が2.2の窒化シリコン膜を膜厚37nm形成した。上記以外は実施例1と同様にして太陽電池を製造した。この太陽電池の特性を調査した結果を表1に示す。この太陽電池の短絡電流密度(Jsc)は37.50mA/cm2であって、開放電圧(Voc)は0.648V、フィルファクタ(F.F)は0.770、最大電力(Pmax)は1.689Wであった。
Claims (6)
- シリコン基板の受光面上に形成されたパッシベーション膜と、前記パッシベーション膜上に形成された反射防止膜と、を含み、前記パッシベーション膜の屈折率が前記反射防止膜の屈折率よりも高く、
前記パッシベーション膜および前記反射防止膜が共に窒化シリコン膜からなり、
前記パッシベーション膜の屈折率が2.9以上であることを特徴とする、太陽電池。 - 前記パッシベーション膜の膜厚が10nm以下であることを特徴とする、請求項1に記載の太陽電池。
- 請求項1または2に記載の太陽電池を製造するための方法であって、第1のガスを用いたプラズマCVD法により前記シリコン基板の受光面上に前記パッシベーション膜を形成する工程と、前記第1のガスと組成が異なる第2のガスを用いたプラズマCVD法により前記パッシベーション膜上に前記反射防止膜を形成する工程と、を含む、太陽電池の製造方法。
- 前記パッシベーション膜の形成時におけるRFパワー密度が前記反射防止膜の形成時におけるRFパワー密度よりも小さいことを特徴とする、請求項3に記載の太陽電池の製造方法。
- 前記パッシベーション膜の形成に用いられる製膜チャンバと前記反射防止膜の形成に用いられる製膜チャンバとが異なることを特徴とする、請求項3または4に記載の太陽電池の製造方法。
- 前記第1のガスおよび前記第2のガスが、シランガスと、アンモニアガスと、を含むことを特徴とする、請求項3から5のいずれかに記載の太陽電池の製造方法。
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004312140A JP4540447B2 (ja) | 2004-10-27 | 2004-10-27 | 太陽電池および太陽電池の製造方法 |
PCT/JP2005/018847 WO2006046407A1 (ja) | 2004-10-27 | 2005-10-13 | 太陽電池および太陽電池の製造方法 |
CN200580035580A CN100583461C (zh) | 2004-10-27 | 2005-10-13 | 太阳能电池及太阳能电池的制造方法 |
DE602005008766T DE602005008766D1 (de) | 2004-10-27 | 2005-10-13 | Solarzelle und verfahren zur herstellung einer solarzelle |
US11/665,015 US8383930B2 (en) | 2004-10-27 | 2005-10-13 | Solar cell and method for producing solar cell |
CN2009100032035A CN101471390B (zh) | 2004-10-27 | 2005-10-13 | 太阳能电池及太阳能电池的制造方法 |
ES05793185T ES2309800T3 (es) | 2004-10-27 | 2005-10-13 | Celula solar y metodo para su produccion. |
EP05793185A EP1816683B1 (en) | 2004-10-27 | 2005-10-13 | Solar cell and method for producing solar cell |
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JP2004312140A JP4540447B2 (ja) | 2004-10-27 | 2004-10-27 | 太陽電池および太陽電池の製造方法 |
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JP2008309986A Division JP5004932B2 (ja) | 2008-12-04 | 2008-12-04 | 太陽電池および太陽電池の製造方法 |
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JP2006128258A JP2006128258A (ja) | 2006-05-18 |
JP4540447B2 true JP4540447B2 (ja) | 2010-09-08 |
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Country Status (7)
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US (1) | US8383930B2 (ja) |
EP (1) | EP1816683B1 (ja) |
JP (1) | JP4540447B2 (ja) |
CN (2) | CN101471390B (ja) |
DE (1) | DE602005008766D1 (ja) |
ES (1) | ES2309800T3 (ja) |
WO (1) | WO2006046407A1 (ja) |
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CN101044630A (zh) | 2007-09-26 |
JP2006128258A (ja) | 2006-05-18 |
US20090007966A1 (en) | 2009-01-08 |
CN100583461C (zh) | 2010-01-20 |
ES2309800T3 (es) | 2008-12-16 |
EP1816683A1 (en) | 2007-08-08 |
CN101471390B (zh) | 2013-01-16 |
DE602005008766D1 (de) | 2008-09-18 |
WO2006046407A1 (ja) | 2006-05-04 |
EP1816683B1 (en) | 2008-08-06 |
EP1816683A4 (en) | 2007-11-28 |
US8383930B2 (en) | 2013-02-26 |
CN101471390A (zh) | 2009-07-01 |
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