JP5844797B2 - 太陽電池の製造方法 - Google Patents
太陽電池の製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 26
- 239000000758 substrate Substances 0.000 claims description 103
- 238000000034 method Methods 0.000 claims description 53
- 230000005684 electric field Effects 0.000 claims description 47
- 230000008569 process Effects 0.000 claims description 38
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 37
- 229910052751 metal Inorganic materials 0.000 claims description 34
- 239000002184 metal Substances 0.000 claims description 34
- 229910052759 nickel Inorganic materials 0.000 claims description 15
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 13
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 13
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 12
- 238000009792 diffusion process Methods 0.000 claims description 11
- 238000001039 wet etching Methods 0.000 claims description 10
- 238000001312 dry etching Methods 0.000 claims description 9
- 230000004888 barrier function Effects 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 7
- 238000010030 laminating Methods 0.000 claims description 4
- 229910021332 silicide Inorganic materials 0.000 claims 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 1
- 239000010949 copper Substances 0.000 description 19
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 15
- 229910052802 copper Inorganic materials 0.000 description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- 238000007747 plating Methods 0.000 description 12
- 239000012535 impurity Substances 0.000 description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 8
- 239000010931 gold Substances 0.000 description 8
- 229910052709 silver Inorganic materials 0.000 description 8
- 239000004332 silver Substances 0.000 description 8
- 239000010936 titanium Substances 0.000 description 8
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 229910052738 indium Inorganic materials 0.000 description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 6
- 230000002265 prevention Effects 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000007769 metal material Substances 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 229910021334 nickel silicide Inorganic materials 0.000 description 4
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 229910005883 NiSi Inorganic materials 0.000 description 3
- 229910005881 NiSi 2 Inorganic materials 0.000 description 3
- 229910004205 SiNX Inorganic materials 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- 238000001579 optical reflectometry Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- -1 for example Chemical compound 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0684—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells double emitter cells, e.g. bifacial solar cells
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Description
Claims (14)
- 基板の第1表面には、エミッタ部及び第1反射防止膜を形成し、前記基板の第2表面には、後面電界部及び第2反射防止膜を形成するステップと、
レーザーを利用したドライエッチング工程を使用して、前記第1反射防止膜には、複数の第1コンタクトラインを形成し、前記第2反射防止膜の後面には、複数の第2コンタクトラインを形成するステップと、
前記複数の第1コンタクトラインを介して露出したエミッタ部に第1電極を形成し、前記複数の第2コンタクトラインを介して露出した後面電界部に第2電極を形成して、前記第1電極及び前記第2電極を形成するステップと
を含み、
前記第1電極及び第2電極を同じ物質から形成し、
前記第1電極及び第2電極を形成するステップは、
前記エミッタ部及び前記後面電界部と直接接触しニッケルシリサイドを含む金属シード層を50nm〜200nmの厚さで形成するステップと、
ニッケルからなる拡散防止膜を前記金属シード層上に形成するステップと、
少なくとも一つの導電層を拡散防止膜上に形成するステップを含む、
両面受光型太陽電池の製造方法。 - 前記エミッタ部及び前記後面電界部を形成する前に、第1テクスチャリング表面及び第2テクスチャリング表面を形成するように前記基板の第1表面及び第2表面をそれぞれテクスチャリングするステップ
をさらに含む、請求項1に記載の両面受光型太陽電池の製造方法。 - 前記エミッタ部、前記第1反射防止膜、前記後面電界部及び前記第2反射防止膜を形成するステップは、
前記基板の前記第1表面及び前記第2表面にそれぞれ前記後面電界部を形成するステップと、
前記基板の前記第2表面に位置した前記後面電界部の後面に第2反射防止膜を形成するステップと、
前記基板の前記第1表面に位置した前記後面電界部を除去するステップと、
前記基板の前記第1表面に前記エミッタ部を形成するステップと、
前記エミッタ部の上面に前記第1反射防止膜を形成するステップとを含む、請求項1に記載の両面受光型太陽電池の製造方法。 - 前記基板の前記第1表面に位置した前記後面電界部を除去するステップにおいて、前記第2反射防止膜をマスクとして利用したエッチバック工程を使用する、請求項3に記載の両面受光型太陽電池の製造方法。
- 前記第1反射防止膜を形成するステップは、アルミニウム酸化膜及びシリコン窒化膜を順次積層することを含む、請求項3に記載の両面受光型太陽電池の製造方法。
- 前記複数の第1コンタクトライン及び前記複数の第2コンタクトラインを形成するステップは、前記レーザーにより発生したエミッタ部の損傷層をウェットエッチング工程で除去するステップをさらに含む、請求項1に記載の両面受光型太陽電池の製造方法。
- 前記エミッタ部及び前記後面電界部を形成する前に、第1テクスチャリング表面及び第2テクスチャリング表面を形成するように前記基板の前記第1表面及び前記第2表面をそれぞれテクスチャリングするステップをさらに含む、請求項6に記載の太陽電池の製造方法。
- 前記エミッタ部、前記第1反射防止膜、前記後面電界部及び前記第2反射防止膜を形成するステップは、
前記基板の前記第1表面及び前記第2表面にそれぞれ後面電界部を形成するステップと、
前記基板の前記第2表面に位置した前記後面電界部の後面に前記第2反射防止膜を形成するステップと、
前記基板の前記第1表面に位置した前記後面電界部を除去するステップと、
前記基板の前記第1表面に前記エミッタ部を形成するステップと、
前記エミッタ部の上面に前記第1反射防止膜を形成するステップとを含む、請求項6に記載の両面受光型太陽電池の製造方法。 - 前記基板の前記第1表面に位置した前記後面電界部を除去するステップにおいて、前記第2反射防止膜をマスクとして利用したエッチバック工程を使用する、請求項8に記載の両面受光型太陽電池の製造方法。
- 前記第1反射防止膜を形成するステップは、アルミニウム酸化膜及びシリコン窒化膜を順次積層することを含む、請求項8に記載の両面受光型太陽電池の製造方法。
- 前記エミッタ部及び前記後面電界部を形成する前に、第1テクスチャリング表面及び第2テクスチャリング表面を形成するように前記基板の前記第1表面及び前記第2表面をそれぞれテクスチャリングするステップをさらに含む、請求項1に記載の両面受光型太陽電池の製造方法。
- 前記エミッタ部、前記第1反射防止膜、前記後面電界部及び前記第2反射防止膜を形成するステップは、
前記基板の前記第1表面及び前記第2表面にそれぞれ後面電界部を形成するステップと、
前記基板の前記第2表面に位置した前記後面電界部の後面に前記第2反射防止膜を形成するステップと、
前記基板の前記第1表面に位置した前記後面電界部を除去するステップと、
前記基板の前記第1表面に前記エミッタ部を形成するステップと、
前記エミッタ部の上面に前記第1反射防止膜を形成するステップとを含む、請求項1に記載の両面受光型太陽電池の製造方法。 - 前記基板の前記第1表面に位置した前記後面電界部を除去するステップにおいて、前記第2反射防止膜をマスクとして利用したエッチバック工程を使用する、請求項12に記載の両面受光型太陽電池の製造方法。
- 前記第1反射防止膜を形成するステップは、アルミニウム酸化膜及びシリコン窒化膜を順次積層することを含む、請求項12に記載の両面受光型太陽電池の製造方法。
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Application Number | Priority Date | Filing Date | Title |
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KR1020100086464A KR101661768B1 (ko) | 2010-09-03 | 2010-09-03 | 태양전지 및 이의 제조 방법 |
KR10-2010-0086464 | 2010-09-03 | ||
PCT/KR2010/007460 WO2012030019A1 (en) | 2010-09-03 | 2010-10-28 | Solar cell and method for manufacturing the same |
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JP2013526053A JP2013526053A (ja) | 2013-06-20 |
JP5844797B2 true JP5844797B2 (ja) | 2016-01-20 |
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JP2013507860A Active JP5844797B2 (ja) | 2010-09-03 | 2010-10-28 | 太陽電池の製造方法 |
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US10090428B2 (en) | 2018-10-02 |
JP2013526053A (ja) | 2013-06-20 |
EP2612369B1 (en) | 2019-04-17 |
WO2012030019A1 (en) | 2012-03-08 |
EP2612369A1 (en) | 2013-07-10 |
EP2612369A4 (en) | 2017-05-03 |
US20160155885A1 (en) | 2016-06-02 |
US8697475B2 (en) | 2014-04-15 |
US20180233621A1 (en) | 2018-08-16 |
US20130025678A1 (en) | 2013-01-31 |
KR101661768B1 (ko) | 2016-09-30 |
CN102934236B (zh) | 2015-12-02 |
US20140116507A1 (en) | 2014-05-01 |
CN102934236A (zh) | 2013-02-13 |
US9972738B2 (en) | 2018-05-15 |
US10424685B2 (en) | 2019-09-24 |
US20110139243A1 (en) | 2011-06-16 |
KR20120023391A (ko) | 2012-03-13 |
DE202010018467U1 (de) | 2017-01-03 |
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