JP2013526053A - 太陽電池及びその製造方法 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 100
- 238000000034 method Methods 0.000 claims abstract description 59
- 238000007747 plating Methods 0.000 claims abstract description 15
- 230000005684 electric field Effects 0.000 claims description 45
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 41
- 229910052751 metal Inorganic materials 0.000 claims description 40
- 239000002184 metal Substances 0.000 claims description 40
- 230000008569 process Effects 0.000 claims description 39
- 239000010949 copper Substances 0.000 claims description 23
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 17
- 229910052802 copper Inorganic materials 0.000 claims description 17
- 229910052759 nickel Inorganic materials 0.000 claims description 16
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 13
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 13
- 238000001039 wet etching Methods 0.000 claims description 13
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 12
- 238000001312 dry etching Methods 0.000 claims description 12
- 239000010931 gold Substances 0.000 claims description 12
- 229910052709 silver Inorganic materials 0.000 claims description 12
- 239000004332 silver Substances 0.000 claims description 12
- 239000010936 titanium Substances 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 11
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 8
- 229910052738 indium Inorganic materials 0.000 claims description 8
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 5
- 229910052698 phosphorus Inorganic materials 0.000 claims description 5
- 239000011574 phosphorus Substances 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 description 9
- 239000012535 impurity Substances 0.000 description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- 230000002265 prevention Effects 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 5
- 239000007769 metal material Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- 229910021334 nickel silicide Inorganic materials 0.000 description 4
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 229910005883 NiSi Inorganic materials 0.000 description 3
- 229910005881 NiSi 2 Inorganic materials 0.000 description 3
- 229910004205 SiNX Inorganic materials 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- 238000001579 optical reflectometry Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- -1 for example Chemical compound 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
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- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
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- 230000006872 improvement Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
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Abstract
【解決手段】本発明の一側面にかかる太陽電池は、基板と、基板の第1表面に位置するエミッタ部と、エミッタ部の表面に位置し、エミッタ部の一部を露出する複数の第1コンタクトラインを備える第1反射防止膜と、複数の第1コンタクトラインを介して露出したエミッタ部と電気的に接続する第1電極と、基板の第2表面に位置する第2電極とを備え、第1電極は、エミッタ部と直接接触するメッキ層を備える。
【選択図】図1
Description
Claims (29)
- 均一な第1表面を含む基板と、
前記基板の第1表面に位置するエミッタ部と、
前記エミッタ部の表面に位置し、前記エミッタ部の一部を露出する複数の第1コンタクトラインを有する第1反射防止膜と、
前記複数の第1コンタクトラインを介して露出した前記エミッタ部と電気的に接続する第1電極と、
前記基板の第2表面に位置する第2電極とを備え、
前記第1電極は、前記エミッタ部と直接接触するメッキ層を備える太陽電池。 - 前記第1電極は、略0.83ないし1の縦横比を有する、請求項1に記載の太陽電池。
- 前記複数の第1コンタクトラインは、略20μmないし60μmの幅に各々形成される、請求項2に記載の太陽電池。
- 前記複数の第1コンタクトラインは、前記エミッタ部の平面積の略2%ないし6%の平面積で形成される、請求項3に記載の太陽電池。
- 前記第1電極は、略20μmないし50μmの厚さに形成される、請求項3に記載の太陽電池。
- 前記基板の第1表面及び第2表面が第1テクスチャリング表面及び第2テクスチャリング表面で形成されるようにそれぞれテクスチャリングされる、請求項1に記載の太陽電池。
- 前記第1反射防止膜は、シリコン窒化膜及び前記エミッタ部とシリコン窒化膜との間に位置するシリコン酸化膜又は酸化アルミニウム膜を含む、請求項1に記載の太陽電池。
- 前記基板は、リン(P)がドーピングされたn型シリコンウエハからなる、請求項1に記載の太陽電池。
- 前記基板の前記第2表面に位置する後面電界部と、
前記第2電極が位置しない前記後面電界部の表面に位置する第2反射防止膜と
をさらに含む、請求項1に記載の太陽電池。 - 前記第1電極と前記第2電極とは、互いに異なる物質から形成される、請求項9に記載の太陽電池。
- 前記第2電極が前記第1電極より大きな幅で形成される、請求項10に記載の太陽電池。
- 前記メッキ層は、前記エミッタ部と直接接触し、ニッケル(Ni)を含む金属シード層と、前記金属シード層上に位置し、銅(Cu)、銀(Ag)、アルミニウム(Al)、錫(Sn)、亜鉛(Zn)、インジウム(In)、チタニウム(Ti)、金(Au)及びこれらの組み合わせからなる群から選択された少なくとも一つの物質を含む少なくとも一つの導電層を含み、
前記第2電極は、銀(Ag)から形成される、請求項10に記載の太陽電池。 - 前記第2反射防止膜は、シリコン窒化膜を含む、請求項10に記載の太陽電池。
- 前記第2反射防止膜は、前記後面電界部の一部を露出する複数の第2コンタクトラインを含む、請求項9に記載の太陽電池。
- 前記複数の第2コンタクトラインは、略40μmないし100μmの幅に各々形成される、請求項14に記載の太陽電池。
- 前記複数の第2コンタクトラインは、前記後面電界部の平面積の略5%ないし15%の平面積で形成される、請求項14に記載の太陽電池。
- 前記第2電極は、前記複数の第2コンタクトラインを介して露出した前記後面電界部と直接接触する金属シード層及び前記金属シード層の後面に配置される少なくとも一つの導電層を含む、請求項14に記載の太陽電池。
- 前記第1電極及び第2電極の前記金属シード層は、ニッケル(Ni)を含み、前記第1及び第2電極の前記少なくとも一つの導電層は、銅(Cu)、銀(Ag)、アルミニウム(Al)、錫(Sn)、亜鉛(Zn)、インジウム(In)、チタニウム(Ti)、金(Au)及びこれらの組み合わせからなる群から選択された少なくとも一つの物質を含む、請求項17に記載の太陽電池。
- 基板の第1表面には、エミッタ部を形成し、前記基板の第2表面には、後面電界部を形成するステップと、
前記エミッタ部の表面には、第1反射防止膜を形成し、前記後面電界部の表面には、第2反射防止膜を形成するステップと、
前記第1反射防止膜に複数の第1コンタクトラインを形成するステップと、
前記第2反射防止膜の後面に第2電極を形成するステップと、
前記複数の第1コンタクトラインに第1電極を形成するステップとを含み、
前記第1電極及び第2電極を互いに異なる物質から形成する、太陽電池の製造方法。 - 前記エミッタ部及び前記後面電界部を形成する前に、第1テクスチャリング表面及び第2テクスチャリング表面を形成するように前記基板の第1表面及び第2表面をそれぞれテクスチャリングするステップをさらに含む、請求項19に記載の太陽電池の製造方法。
- 前記複数の第1コンタクトラインを形成するステップにおいて、ウェットエッチング又はレーザーを利用したドライエッチング工程を使用する、請求項19に記載の太陽電池の製造方法。
- 前記複数の第1コンタクトラインを形成するステップは、
レーザーを利用したドライエッチング工程で前記第1反射防止膜をエッチングするステップと、
前記レーザーにより発生したエミッタ部の損傷層をウェットエッチング工程で除去するステップとを含む、請求項19に記載の太陽電池の製造方法。 - 前記第2電極を形成するステップは、
銀(Ag)及びガラスフリット(glass frit)が混合された導電ペーストを前記第2反射防止膜の表面に印刷するステップと、
前記導電ペーストを乾燥及び焼成するステップとを含み、
前記第1電極を形成するステップは、
前記エミッタ部と直接接触する金属シード層を形成するステップと、
前記金属シード層上に少なくとも一つの導電層を形成するステップとを含む、請求項19に記載の太陽電池の製造方法。 - 基板の第1表面には、エミッタ部を形成し、前記基板の第2表面には、後面電界部を形成するステップと、
前記エミッタ部の表面には、第1反射防止膜を形成し、前記後面電界部の表面には、第2反射防止膜を形成するステップと、
前記第1反射防止膜には、複数の第1コンタクトラインを形成し、前記第2反射防止膜には、複数の第2コンタクトラインを形成するステップと、
前記複数の第1コンタクトラインを介して露出した前記エミッタ部には、第1電極を形成し、前記複数の第2コンタクトラインを介して露出した前記後面電界部には、第2電極を形成するステップとを含み、
前記第1電極及び第2電極を互いに同じ物質から形成する、太陽電池の製造方法。 - 前記エミッタ部及び前記後面電界部を形成する前に、第1テクスチャリング表面及び第2テクスチャリング表面を形成するように前記基板の第1表面及び第2表面をそれぞれテクスチャリングするステップをさらに含む、請求項24に記載の太陽電池の製造方法。
- 前記複数の第1コンタクトライン及び第2コンタクトラインを形成するステップにおいて、ウェットエッチング又はレーザーを利用したドライエッチング工程を使用する、請求項24に記載の太陽電池の製造方法。
- 前記複数の第1コンタクトライン及び第2コンタクトラインを形成するステップは、
レーザーを利用したドライエッチング工程で前記第1反射防止膜及び前記第2反射防止膜をそれぞれエッチングするステップと、
前記レーザーにより発生したエミッタ部及び後面電界部の損傷層をウェットエッチング工程で除去するステップとを含む、請求項24に記載の太陽電池の製造方法。 - 前記第1電極及び第2電極を形成するステップは、前記エミッタ部又は前記後面電界部と直接接触する金属シード層を形成するステップ、及び前記金属シード層上に少なくとも一つの導電層を形成するステップを含む、請求項24に記載の太陽電池の製造方法。
- 前記基板の第1表面がテクスチャリングされた、請求項1に記載の太陽電池。
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CN102934236A (zh) | 2013-02-13 |
US8697475B2 (en) | 2014-04-15 |
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US20140116507A1 (en) | 2014-05-01 |
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US20130025678A1 (en) | 2013-01-31 |
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