JP2016127294A - 太陽電池モジュール及びその製造方法 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 43
- 229910052751 metal Inorganic materials 0.000 claims abstract description 159
- 239000002184 metal Substances 0.000 claims abstract description 159
- 238000002844 melting Methods 0.000 claims abstract description 114
- 230000008018 melting Effects 0.000 claims abstract description 112
- 239000004065 semiconductor Substances 0.000 claims description 150
- 239000000758 substrate Substances 0.000 claims description 150
- 238000000034 method Methods 0.000 claims description 48
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 17
- 239000004020 conductor Substances 0.000 claims description 10
- 239000003870 refractory metal Substances 0.000 claims description 6
- 229910017944 Ag—Cu Inorganic materials 0.000 claims description 3
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- 239000002245 particle Substances 0.000 description 6
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- 238000010304 firing Methods 0.000 description 5
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- 239000010703 silicon Substances 0.000 description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
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- 229910007116 SnPb Inorganic materials 0.000 description 4
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- 229910052793 cadmium Inorganic materials 0.000 description 4
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
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- 229910052733 gallium Inorganic materials 0.000 description 4
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- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 3
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- 239000002210 silicon-based material Substances 0.000 description 3
- 239000005341 toughened glass Substances 0.000 description 3
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910020830 Sn-Bi Inorganic materials 0.000 description 2
- 229910007637 SnAg Inorganic materials 0.000 description 2
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- -1 SnCuAg Inorganic materials 0.000 description 2
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- 229910018728 Sn—Bi Inorganic materials 0.000 description 2
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- 229910052782 aluminium Inorganic materials 0.000 description 2
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
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- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
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- 239000001257 hydrogen Substances 0.000 description 1
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- HBVFXTAPOLSOPB-UHFFFAOYSA-N nickel vanadium Chemical compound [V].[Ni] HBVFXTAPOLSOPB-UHFFFAOYSA-N 0.000 description 1
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0508—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module the interconnection means having a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0516—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module specially adapted for interconnection of back-contact solar cells
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Abstract
Description
Claims (20)
- 電極を含む複数の太陽電池の電極上に低融点金属を塗布する段階と、
前記低融点金属を溶融して前記電極上に接触層を形成する段階と、
前記接触層に超音波振動を発生させ、前記電極の表面に形成された表面酸化膜を除去する段階と、
前記電極の表面金属と前記接触層が溶融され、前記電極の表面に金属接続層を形成する段階と、
前記金属接続層にインターコネクタを接続させる段階を含む、太陽電池モジュールの製造方法。 - 前記表面酸化膜を除去する段階は、
前記接触層の表面に超音波振動を発生させる段階と、
前記超音波振動により前記接触層の内部にキャビテーション(cavitation)現象が発生する段階と、
前記キャビテーション現象により前記電極の表面に形成された前記表面酸化膜を除去する段階を含む、請求項1に記載の太陽電池モジュールの製造方法。 - 前記金属接続層と、前記インターコネクタを接続させる段階は、
前記金属接続層の前記低融点金属と前記インターコネクタの低融点金属を溶融して互いに結合する段階である、請求項1に記載の太陽電池モジュールの製造方法。 - 前記超音波振動は、超音波チップ(ultrasonic tip)によって生成される、請求項1に記載の太陽電池モジュールの製造方法。
- 前記低融点金属を塗布する前に、
前記電極を包む絶縁膜を形成する段階をさらに含む、請求項1に記載の太陽電池モジュールの製造方法。 - 前記電極を形成する段階は、
前記半導体基板の第1面に第1金属を塗布する段階と、
前記第1金属に前記超音波振動を発生させ、第1電極を形成する段階、
前記半導体基板の第2面に第2金属を塗布する段階と、
前記第2金属に超音波振動を発生させ、第2電極を形成する段階と
を含む、前記電極を形成する段階 をさらに含む、請求項1に記載の太陽電池モジュールの製造方法。 - 前記第1金属は、高融点金属であり、前記第2金属は低融点金属である、請求項6に記載の太陽電池モジュールの製造方法。
- 前記高融点金属の溶融点は約150℃以上であり、前記低融点金属の溶融点は約150℃以下である、請求項7に記載の太陽電池モジュールの製造方法。
- 前記高融点金属は、Sn−Ag−Cu系、Sn−Zn系、Sn−Pb系の内の少なくとも一つの導電性物質を含む、請求項8に記載の太陽電池モジュールの製造方法。
- 前記高融点金属に含まれるスズ(Sn)の含有量が約60〜100重量%であり、
前記低融点金属に含まれるスズ(Sn)の含有量が約10〜60重量%である、請求項8に記載の太陽電池モジュールの製造方法。 - 前記第1電極と第2電極を形成する前に、
前記半導体基板の第1面に第1反射防止膜を形成し、
前記半導体基板の第2面に第2反射防止膜を形成する段階を含む、請求項6に記載の太陽電池モジュールの製造方法。 - 前記第1電極を形成する段階は、
前記超音波振動により前記キャビテーション現象が発生して前記第1反射防止膜の一部がエッチングされる段階と、
前記第1反射防止膜のエッチングされた部分を介して前記第1金属が前記半導体基板の第1面と接続される段階を含む、請求項11に記載の太陽電池モジュールの製造方法。 - 前記第2電極を形成する段階は、
前記超音波振動により前記キャビテーション現象が発生して前記第2反射防止膜の一部がエッチングされる段階と、
前記第2反射防止膜のエッチングされた部分を介して前記第2金属が前記半導体基板の第2面と接続される段階を含む、請求項11に記載の太陽電池モジュールの製造方法。 - 前記半導体基板の第1面と前記第1電極との間に位置する第1接続層をさらに含む、請求項12に記載の太陽電池モジュールの製造方法。
- 前記第1接続層は、
前記キャビテーション現象により前記第1反射防止膜の内部に亀裂が発生して形成される、請求項14に記載の太陽電池モジュールの製造方法。 - 前記第1接続層は、前記第1反射防止膜と、前記第1金属が混合されて位置する、請求項15に記載の太陽電池モジュールの製造方法。
- 前記半導体基板の第2面と前記第2電極との間に位置する第2接続層をさらに含む、請求項13に記載の太陽電池モジュールの製造方法。
- 前記第2接続層は、
前記キャビテーション現象により前記第2反射防止膜の内部に亀裂が発生して形成される、請求項17に記載の太陽電池モジュールの製造方法。 - 前記第2接続層は、前記第2反射防止膜と前記第2金属が混合されて位置する、請求項18に記載の太陽電池モジュールの製造方法。
- 前記第1面は、光が入射されない非入射面であり、前記第2面は、光が入射される入射面である、請求項6に記載の太陽電池モジュールの製造方法。
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JP7431303B2 (ja) | 2021-09-10 | 2024-02-14 | 上海晶科緑能企業管理有限公司 | 太陽電池およびその製造方法、光起電力モジュール |
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