JP6215972B2 - 太陽電池モジュール及びその製造方法 - Google Patents
太陽電池モジュール及びその製造方法 Download PDFInfo
- Publication number
- JP6215972B2 JP6215972B2 JP2016000207A JP2016000207A JP6215972B2 JP 6215972 B2 JP6215972 B2 JP 6215972B2 JP 2016000207 A JP2016000207 A JP 2016000207A JP 2016000207 A JP2016000207 A JP 2016000207A JP 6215972 B2 JP6215972 B2 JP 6215972B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- semiconductor substrate
- solar cell
- metal
- melting point
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 36
- 239000004065 semiconductor Substances 0.000 claims description 151
- 239000000758 substrate Substances 0.000 claims description 151
- 229910052751 metal Inorganic materials 0.000 claims description 144
- 239000002184 metal Substances 0.000 claims description 144
- 238000002844 melting Methods 0.000 claims description 104
- 230000008018 melting Effects 0.000 claims description 104
- 238000000034 method Methods 0.000 claims description 42
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 17
- 239000004020 conductor Substances 0.000 claims description 10
- 239000003870 refractory metal Substances 0.000 claims description 6
- 229910017944 Ag—Cu Inorganic materials 0.000 claims description 3
- 229910020816 Sn Pb Inorganic materials 0.000 claims description 3
- 229910020922 Sn-Pb Inorganic materials 0.000 claims description 3
- 229910020994 Sn-Zn Inorganic materials 0.000 claims description 3
- 229910008783 Sn—Pb Inorganic materials 0.000 claims description 3
- 229910009069 Sn—Zn Inorganic materials 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 2
- 229910000679 solder Inorganic materials 0.000 description 82
- 230000005684 electric field Effects 0.000 description 49
- 239000012535 impurity Substances 0.000 description 25
- 230000008569 process Effects 0.000 description 18
- 239000000463 material Substances 0.000 description 16
- 239000000853 adhesive Substances 0.000 description 12
- 230000001070 adhesive effect Effects 0.000 description 12
- 238000005476 soldering Methods 0.000 description 12
- 239000011248 coating agent Substances 0.000 description 11
- 238000000576 coating method Methods 0.000 description 11
- 230000001681 protective effect Effects 0.000 description 10
- 238000009792 diffusion process Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 230000004907 flux Effects 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229910052796 boron Inorganic materials 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000010304 firing Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 229910007116 SnPb Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910052797 bismuth Inorganic materials 0.000 description 4
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 4
- 229910052793 cadmium Inorganic materials 0.000 description 4
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 238000005304 joining Methods 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 229910004205 SiNX Inorganic materials 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 229910052787 antimony Inorganic materials 0.000 description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 230000035939 shock Effects 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000002210 silicon-based material Substances 0.000 description 3
- 239000005341 toughened glass Substances 0.000 description 3
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910020830 Sn-Bi Inorganic materials 0.000 description 2
- 229910007637 SnAg Inorganic materials 0.000 description 2
- 229910008433 SnCU Inorganic materials 0.000 description 2
- -1 SnCuAg Inorganic materials 0.000 description 2
- 229910006913 SnSb Inorganic materials 0.000 description 2
- 229910005728 SnZn Inorganic materials 0.000 description 2
- 229910018728 Sn—Bi Inorganic materials 0.000 description 2
- 229910018956 Sn—In Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000002003 electrode paste Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229920002313 fluoropolymer Polymers 0.000 description 2
- 239000004811 fluoropolymer Substances 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 238000005036 potential barrier Methods 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000027756 respiratory electron transport chain Effects 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 239000005368 silicate glass Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910000756 V alloy Inorganic materials 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 239000005038 ethylene vinyl acetate Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- HBVFXTAPOLSOPB-UHFFFAOYSA-N nickel vanadium Chemical compound [V].[Ni] HBVFXTAPOLSOPB-UHFFFAOYSA-N 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 229920005672 polyolefin resin Polymers 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0508—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module the interconnection means having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0516—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module specially adapted for interconnection of back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Description
〔先行技術文献〕
〔特許文献〕
〔特許文献1〕米国特許出願公開第2014/124027号明細書
〔特許文献2〕米国特許出願公開第2013/333744号明細書
Claims (14)
- 半導体基板に複数の太陽電池の電極を形成する段階であって、
前記半導体基板の第1面に第1金属を塗布する段階と、
前記第1金属に超音波振動を発生させ、第1電極を形成する段階と、
前記第1電極を形成した後、前記半導体基板の第2面に第2金属を塗布する段階と、
前記第2金属に超音波振動を発生させ、第2電極を形成する段階と
を含む、電極を形成する段階と
前記第1電極と前記第2電極をインターコネクタにより接続する段階とを含み、
前記第1金属は、高融点金属であり、前記第2金属は低融点金属である、太陽電池モジュールの製造方法。 - 前記高融点金属の溶融点は150℃以上であり、前記低融点金属の溶融点は150℃以下である、請求項1に記載の太陽電池モジュールの製造方法。
- 前記高融点金属は、Sn−Ag−Cu系、Sn−Zn系、Sn−Pb系の内の少なくとも一つの導電性物質を含む、請求項2に記載の太陽電池モジュールの製造方法。
- 前記高融点金属に含まれるスズ(Sn)の含有量が60〜100重量%であり、
前記低融点金属に含まれるスズ(Sn)の含有量が10〜60重量%である、請求項2に記載の太陽電池モジュールの製造方法。 - 前記第1電極と前記第2電極を形成する前に、
前記半導体基板の第1面に第1反射防止膜を形成し、
前記半導体基板の第2面に第2反射防止膜を形成する段階を含む、請求項1に記載の太陽電池モジュールの製造方法。 - 前記第1電極を形成する段階は、
前記超音波振動によりキャビテーション現象が発生して前記第1反射防止膜の一部がエッチングされる段階と、
前記第1反射防止膜のエッチングされた部分を介して前記第1金属が前記半導体基板の第1面と接続される段階を含む、請求項5に記載の太陽電池モジュールの製造方法。 - 前記第2電極を形成する段階は、
前記超音波振動によりキャビテーション現象が発生して前記第2反射防止膜の一部がエッチングされる段階と、
前記第2反射防止膜のエッチングされた部分を介して前記第2金属が前記半導体基板の第2面と接続される段階を含む、請求項5に記載の太陽電池モジュールの製造方法。 - 前記半導体基板の第1面と前記第1電極との間に位置する第1接続層をさらに含む、請求項6に記載の太陽電池モジュールの製造方法。
- 前記第1接続層は、
前記キャビテーション現象により前記第1反射防止膜の内部に亀裂が発生して形成される、請求項8に記載の太陽電池モジュールの製造方法。 - 前記第1接続層は、前記第1反射防止膜と、前記第1金属が混合されて位置する、請求項9に記載の太陽電池モジュールの製造方法。
- 前記半導体基板の第2面と前記第2電極との間に位置する第2接続層をさらに含む、請求項7に記載の太陽電池モジュールの製造方法。
- 前記第2接続層は、
前記キャビテーション現象により前記第2反射防止膜の内部に亀裂が発生して形成される、請求項11に記載の太陽電池モジュールの製造方法。 - 前記第2接続層は、前記第2反射防止膜と前記第2金属が混合されて位置する、請求項12に記載の太陽電池モジュールの製造方法。
- 前記第1面は、光が入射されない非入射面であり、前記第2面は、光が入射される入射面である、請求項1に記載の太陽電池モジュールの製造方法。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2014-0195636 | 2014-12-31 | ||
KR1020140195636A KR102316787B1 (ko) | 2014-12-31 | 2014-12-31 | 태양 전지 모듈 |
KR10-2015-0097115 | 2015-07-08 | ||
KR1020150097115A KR102470790B1 (ko) | 2015-07-08 | 2015-07-08 | 태양 전지 및 이의 제조 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016127294A JP2016127294A (ja) | 2016-07-11 |
JP6215972B2 true JP6215972B2 (ja) | 2017-10-18 |
Family
ID=55070643
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016000207A Expired - Fee Related JP6215972B2 (ja) | 2014-12-31 | 2016-01-04 | 太陽電池モジュール及びその製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US9818891B2 (ja) |
EP (1) | EP3041055A3 (ja) |
JP (1) | JP6215972B2 (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10686087B2 (en) | 2016-09-19 | 2020-06-16 | Lg Electronics Inc. | Solar cell and method for manufacturing the same |
US10084098B2 (en) | 2016-09-30 | 2018-09-25 | Sunpower Corporation | Metallization of conductive wires for solar cells |
KR101935802B1 (ko) * | 2017-01-11 | 2019-01-07 | 엘지전자 주식회사 | 윈도우 블라인드 |
EP3447804B1 (de) * | 2017-08-25 | 2022-02-16 | Heraeus Deutschland GmbH & Co. KG | Solarzellenverbinder mit funktioneller längsbeschichtung |
CN111937162A (zh) | 2018-03-29 | 2020-11-13 | 太阳能公司 | 太阳能电池的基于导线的金属化和串接 |
CN108672867B (zh) * | 2018-05-28 | 2021-03-02 | 东莞市新玛博创超声波科技有限公司 | 铜基材料的无助焊剂脉冲超声低温钎焊方法 |
CN115188834B (zh) | 2021-09-10 | 2023-09-22 | 上海晶科绿能企业管理有限公司 | 太阳能电池及其制备方法、光伏组件 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2758749B2 (ja) | 1991-10-17 | 1998-05-28 | シャープ株式会社 | 光電変換装置及びその製造方法 |
JP2645953B2 (ja) | 1992-01-16 | 1997-08-25 | 三洋電機株式会社 | 太陽電池の製造方法 |
JPH06209115A (ja) | 1993-01-12 | 1994-07-26 | Sanyo Electric Co Ltd | 太陽電池の半田部形成方法 |
JPH06283735A (ja) | 1993-03-25 | 1994-10-07 | Sanyo Electric Co Ltd | 太陽電池の半田部形成方法及び半田部形成装置 |
JPH08264819A (ja) | 1995-03-20 | 1996-10-11 | Kanegafuchi Chem Ind Co Ltd | 半導体装置及び該製造方法 |
JPH1121660A (ja) | 1997-07-03 | 1999-01-26 | Hitachi Cable Ltd | 太陽電池用接続線 |
DE102006035626A1 (de) * | 2006-07-31 | 2008-02-07 | Zentrum für Material- und Umwelttechnik GmbH | Verfahren zum Anbringen eines Verbindungsleiters an einer photovoltaischen Solarzelle |
WO2008080160A1 (en) * | 2006-12-22 | 2008-07-03 | Advent Solar, Inc. | Interconnect technologies for back contact solar cells and modules |
JP5100206B2 (ja) | 2007-05-28 | 2012-12-19 | 三洋電機株式会社 | 太陽電池モジュール |
DE102010000520A1 (de) | 2010-02-23 | 2011-08-25 | SCHOTT Solar AG, 55122 | Verfahren und Vorrichtung zum Aufbringen von Lot auf ein Werkstück |
JP5535709B2 (ja) * | 2010-03-19 | 2014-07-02 | 三洋電機株式会社 | 太陽電池、その太陽電池を用いた太陽電池モジュール及び太陽電池の製造方法 |
JP5562733B2 (ja) | 2010-06-16 | 2014-07-30 | 東芝三菱電機産業システム株式会社 | 部材接合方法 |
KR101661768B1 (ko) | 2010-09-03 | 2016-09-30 | 엘지전자 주식회사 | 태양전지 및 이의 제조 방법 |
JP2012109423A (ja) | 2010-11-18 | 2012-06-07 | Nippon Avionics Co Ltd | 薄膜太陽電池モジュールのインターコネクタのはんだ付け方法およびはんだ付け装置 |
US20130333744A1 (en) | 2011-01-27 | 2013-12-19 | Hitachi Chemical Company, Ltd. | Conductive binder composition, metal wire with conductive binder, bonded unit, and solar cell module |
JP5806304B2 (ja) | 2011-05-31 | 2015-11-10 | 京セラ株式会社 | 太陽電池およびその製造方法 |
TWI535043B (zh) * | 2011-06-29 | 2016-05-21 | 國立屏東科技大學 | 以活性焊料製做的太陽能電池電極及其方法 |
WO2013024829A1 (ja) | 2011-08-12 | 2013-02-21 | 日立化成工業株式会社 | はんだ接着体、はんだ接着体の製造方法、素子、太陽電池、素子の製造方法および太陽電池の製造方法 |
US9246026B2 (en) * | 2011-11-22 | 2016-01-26 | Kaneka Corporation | Solar cell and method of manufacture thereof, and solar cell module |
JP2013143459A (ja) | 2012-01-11 | 2013-07-22 | Shirakuseru Kk | 薄形シリコン太陽電池セル |
JP6196031B2 (ja) | 2012-11-27 | 2017-09-13 | 株式会社カネカ | 太陽電池およびその製造方法、ならびに太陽電池モジュール |
-
2015
- 2015-12-30 US US14/985,113 patent/US9818891B2/en active Active
- 2015-12-30 EP EP15003694.5A patent/EP3041055A3/en not_active Withdrawn
-
2016
- 2016-01-04 JP JP2016000207A patent/JP6215972B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2016127294A (ja) | 2016-07-11 |
EP3041055A2 (en) | 2016-07-06 |
US9818891B2 (en) | 2017-11-14 |
EP3041055A3 (en) | 2016-11-09 |
US20160190363A1 (en) | 2016-06-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6215972B2 (ja) | 太陽電池モジュール及びその製造方法 | |
US9040409B2 (en) | Methods of forming solar cells and solar cell modules | |
US10636921B2 (en) | Solar cell module and method for manufacturing the same | |
EP2575184B1 (en) | Solar cell module | |
EP2575183B1 (en) | Solar cell module | |
US20160204300A1 (en) | Solar cell and method of manufacturing the same | |
JP5833350B2 (ja) | 太陽電池及びその製造方法 | |
JP5735474B2 (ja) | 太陽電池及びその製造方法 | |
CN108713257B (zh) | 太阳能电池板 | |
JP6006279B2 (ja) | 太陽電池モジュール | |
EP2535950B1 (en) | Solar cell module | |
EP2421049B1 (en) | Solar cell panel | |
US10170647B2 (en) | Solar cell and method for manufacturing the same | |
JP6321092B2 (ja) | 太陽電池及び太陽電池モジュール | |
KR20120136044A (ko) | 태양전지 모듈 | |
KR101788169B1 (ko) | 태양 전지 모듈 및 태양 전지 | |
KR101747344B1 (ko) | 태양전지 모듈 | |
KR102316787B1 (ko) | 태양 전지 모듈 | |
KR102470790B1 (ko) | 태양 전지 및 이의 제조 방법 | |
US20220223748A1 (en) | Solar cell panel manufacturing method and paste for solar cell electrode used therefor | |
KR102619351B1 (ko) | 태양 전지 모듈 | |
KR101760008B1 (ko) | 태양 전지 모듈 및 그 제조 방법 | |
KR101798148B1 (ko) | 태양전지 모듈 | |
WO2017056483A1 (ja) | 太陽電池モジュール |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20161130 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20161206 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170306 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20170516 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170619 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20170822 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20170921 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6215972 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |