JP6321092B2 - 太陽電池及び太陽電池モジュール - Google Patents
太陽電池及び太陽電池モジュール Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 claims description 85
- 239000000758 substrate Substances 0.000 claims description 70
- 230000005684 electric field Effects 0.000 claims description 69
- 239000012535 impurity Substances 0.000 claims description 23
- 239000000853 adhesive Substances 0.000 claims description 16
- 230000001070 adhesive effect Effects 0.000 claims description 16
- 230000007423 decrease Effects 0.000 claims description 11
- 230000008859 change Effects 0.000 claims description 10
- 230000003247 decreasing effect Effects 0.000 claims description 7
- 238000002161 passivation Methods 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000011810 insulating material Substances 0.000 description 5
- 239000007769 metal material Substances 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 239000002210 silicon-based material Substances 0.000 description 5
- 229910004205 SiNX Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004012 SiCx Inorganic materials 0.000 description 1
- 229910004286 SiNxOy Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910008433 SnCU Inorganic materials 0.000 description 1
- 229910007116 SnPb Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000002313 adhesive film Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0516—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module specially adapted for interconnection of back-contact solar cells
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- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Description
Claims (19)
- 第1導電型の不純物がドーピングされた半導体基板と、
前記第1導電型と反対の第2導電型の不純物がドーピングされ、第1方向に長く伸びたエミッタ部と、
前記半導体基板より前記第1導電型の不純物が高濃度にドーピングされ、前記エミッタ部と並行するように、前記第1方向に長く伸びた背面電界部と、
前記エミッタ部に電気的に接続され、前記第1方向に長く伸びた第1電極と、
前記背面電界部に電気的に接続され、前記第1方向に長く伸びた第2電極とを含み、
前記第1電極は、前記第1方向に進行することにより、第1最大線幅を有する部分と、前記第1最大線幅より小さい第1最小線幅を有する部分が繰り返し形成され、
前記第2電極は、前記第1方向に進行することにつれて、第2最大線幅を有する部分と前記第2最大線幅より小さい第2最小線幅を有する部分が繰り返し形成され、
前記第1電極の線幅は、前記第1最小線幅と前記第1最大線幅の間で漸進的に増加するか減少し、前記第2電極の線幅は、前記第2最小線幅と前記第2最大線幅の間で漸進的に増加するか減少し、前記第1電極の平均線幅は、前記第2電極の平均線幅より大きく、
前記第1電極の前記第1最大線幅は、前記第2電極の前記第2最大線幅より大きく、
前記第1電極の前記第1最小線幅は、前記第2電極の前記第2最小線幅より大きく、
前記エミッタ部の平均線幅は、前記背面電界部の平均線幅より大きく、
前記エミッタ部は、前記第1電極が前記第1最大線幅を有する部分で最大線幅を有し、前記第1電極が前記第1最小線幅を有する部分で最小線幅を有し、
前記背面電界部は、前記第2電極が前記第2最大線幅を有する部分で最大線幅を有し、前記第2電極が前記第2最小線幅を有する部分で最小線幅を有する、太陽電池。 - 前記第1電極が前記第1最大線幅を有する部分と前記第2電極が前記第2最小線幅を有する部分は、前記第1方向と交差する第2方向に同じライン線上に位置し、
前記第1電極が前記第1最小線幅を有する部分と前記第2電極が前記第2最大線幅を有する部分は、前記第2方向に同一ライン線上に位置する、請求項1に記載の太陽電池。 - 前記第1電極の線幅が、前記第1最小線幅から前記第1最大線幅まで増加するとき、前記第1電極の線幅が増加する角は、前記第1方向に基づいて、5°〜85°の間である、請求項1に記載の太陽電池。
- 前記第2電極の線幅が、前記第2最小線幅から前記第2最大線幅まで増加するとき、前記第2電極の線幅が増加する角は、前記第1方向に基づいて、5°〜85°の間である、請求項3に記載の太陽電池。
- 前記第2電極の線幅が増加する角は、前記第1電極の線幅が増加する角より小さいか同じである、請求項4に記載の太陽電池。
- 前記第1電極の平均線幅は、前記第2電極の平均線幅の1.5倍〜3倍である、請求項1に記載の太陽電池。
- 前記第1電極において前記第1最大線幅は、前記第1最小線幅の2倍〜10倍であり、
前記第2電極において前記第2最大線幅は、前記第2最小線幅の2倍〜8倍である、請求項1に記載の太陽電池。 - 前記エミッタ部と前記背面電界部のそれぞれの線幅は、前記第1方向に進行することにより、漸進的に繰り返し変化する、請求項1に記載の太陽電池。
- 半導体基板、及び前記半導体基板の背面に第1方向に長く伸びて形成された複数の第1、第2電極を含む複数の太陽電池と、
前記複数の太陽電池の内、互いに隣接する2つの太陽電池の内、いずれか1つの第1太陽電池に備えられた複数の第1電極と電気的に接続され、前記第1方向と交差する第2方向に長く伸びている複数の第1導電性配線と、残りの1つの第2太陽電池に備えられた複数の第2電極と電気的に接続され、前記第2方向に長く伸びている複数の第2導電性配線とを含み、
前記複数の太陽電池は、
第1導電型を有する前記半導体基板と反対の導電型の第2導電型の不純物がドーピングされ、第1方向に長く伸びたエミッタ部と前記半導体基板より前記第1導電型の不純物が高濃度にドーピングされ、前記エミッタ部と並行するように、前記第1方向に長く伸びた背面電界部とを備え、
前記第1電極の線幅は、前記第1電極の前記第1方向線上の内、前記第1導電性配線と交差して電気的に接続される地点で第1最大線幅を有し、前記第2導電性配線と交差し絶縁される地点で第1最小線幅を有するように繰り返し形成され、
前記第2電極の線幅は、前記第2電極の前記第1方向線上の内、前記第1導電性配線と交差し絶縁される地点で第2最小線幅を有し、前記第2導電性配線と交差して電気的に接続される地点で第2最大線幅を有するように繰り返し形成され、
前記第1、第2電極のそれぞれの線幅は、それぞれの最大線幅と最小線幅の間で第1、第2電極の長さ方向に沿って漸進的に減少するか増加し、
前記第1電極の前記第1最大線幅は、前記第2電極の前記第2最大線幅より大きく、
前記第1電極の前記第1最小線幅は、前記第2電極の前記第2最小線幅より大きく、
前記エミッタ部の平均線幅は、前記背面電界部の平均線幅より大きく、
前記エミッタ部は、前記第1電極が前記第1最大線幅を有する部分で最大線幅を有し、前記第1電極が前記第1最小線幅を有する部分で最小線幅を有し、
前記背面電界部は、前記第2電極が前記第2最大線幅を有する部分で最大線幅を有し、前記第2電極が前記第2最小線幅を有する部分で最小線幅を有する、太陽電池モジュール。 - 前記第1電極の最大線幅は、前記第2電極の最小線幅の2倍〜10倍である、請求項9に記載の太陽電池モジュール。
- 前記第2電極の最大線幅は、前記第1電極の最小線幅の2倍〜8倍である、請求項9に記載の太陽電池モジュール。
- 前記第2電極の最小線幅:前記第1電極の最大線幅の割合は、前記第1電極の最小線幅:前記第2電極の最大線幅の割合と互いに異なる、請求項9に記載の太陽電池モジュール。
- 前記第1、第2電極のそれぞれは、前記最大線幅と前記最小線幅の間で線幅が漸進的に増加するか減少する、請求項9に記載の太陽電池モジュール。
- 前記背面電界部に接続される前記第2電極の最小線幅は、前記エミッタ部に接続される前記第1電極の最小線幅より小さい、請求項9に記載の太陽電池モジュール。
- 前記エミッタ部に接続される前記第1電極の平均線幅は、前記背面電界部に接続される前記第2電極の平均線幅より大きい、請求項9に記載の太陽電池モジュール。
- 前記第1電極は、前記第1導電性配線との間に導電性接着剤を介して電気的に接続され、前記第2導電性配線との間には絶縁層によって絶縁され、
前記第2電極は、前記第2導電性配線との間に導電性接着剤を介して電気的に接続され、前記第1導電性配線との間には前記絶縁層によって絶縁される、請求項9に記載の太陽電池モジュール。 - 前記エミッタ部の線幅と前記背面電界部の線幅は、前記第1方向に沿って前記第1、第2電極の線幅の変化に対応して増加するか減少する、請求項9に記載の太陽電池モジュール。
- 前記第1太陽電池に接続された複数の第1導電性配線と前記第2太陽電池に接続された複数の第2導電性配線は、互いに重畳されて接続されたり一体に形成される、請求項9に記載の太陽電池モジュール。
- 前記第1太陽電池に接続された複数の第1導電性配線と前記第2太陽電池に接続された複数の第2導電性配線は、前記第1、第2太陽電池との間で、前記第1方向に長く伸びたインターコネクタに共通に接続される、請求項9に記載の太陽電池モジュール。
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