JP2017120906A - 太陽電池モジュール - Google Patents
太陽電池モジュール Download PDFInfo
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- JP2017120906A JP2017120906A JP2016253494A JP2016253494A JP2017120906A JP 2017120906 A JP2017120906 A JP 2017120906A JP 2016253494 A JP2016253494 A JP 2016253494A JP 2016253494 A JP2016253494 A JP 2016253494A JP 2017120906 A JP2017120906 A JP 2017120906A
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- 239000004065 semiconductor Substances 0.000 claims abstract description 63
- 239000000853 adhesive Substances 0.000 claims abstract description 59
- 230000001070 adhesive effect Effects 0.000 claims abstract description 59
- 239000000758 substrate Substances 0.000 claims abstract description 57
- 239000011247 coating layer Substances 0.000 claims abstract description 46
- 239000010410 layer Substances 0.000 claims description 22
- 239000004840 adhesive resin Substances 0.000 claims description 18
- 229920006223 adhesive resin Polymers 0.000 claims description 18
- 239000002245 particle Substances 0.000 claims description 18
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 10
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 230000000994 depressogenic effect Effects 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- 229910000679 solder Inorganic materials 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 238000002844 melting Methods 0.000 claims description 4
- 230000008018 melting Effects 0.000 claims description 4
- 229920005989 resin Polymers 0.000 claims description 4
- 239000011347 resin Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 239000004925 Acrylic resin Substances 0.000 claims description 3
- 229920000178 Acrylic resin Polymers 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 239000003822 epoxy resin Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 238000010030 laminating Methods 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229920000647 polyepoxide Polymers 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 abstract description 2
- 238000000576 coating method Methods 0.000 abstract description 2
- 230000005684 electric field Effects 0.000 description 8
- 239000012535 impurity Substances 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical class N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 229910004286 SiNxOy Inorganic materials 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0508—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module the interconnection means having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0512—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module made of a particular material or composition of materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
Description
Claims (20)
- それぞれが半導体基板と、前記半導体基板の表面に形成された電極を備える複数の太陽電池と、
前記複数の太陽電池の内、互いに隣接する複数の太陽電池を互いに電気的に接続するために前記複数の太陽電池のそれぞれに備えられた電極に導電性接着剤を介して接続される複数の配線とを含み、
前記複数の配線のそれぞれは、複数の導電性コアが束で形成されたコアバンドル(core bundle)と、前記コアバンドルの外面をコーティングする導電性コーティング層を含み、
前記複数の配線のそれぞれの表面には、前記コアバンドル(bundle)の外面形状に沿って屈曲した複数の配線凹凸が形成される、太陽電池モジュール。 - 前記コアバンドルの外面には、前記複数のコアによって形成されるコア凹凸を備え、前記コア凹凸は、前記複数のコアの間で陥没し、
前記複数の配線凹凸は、前記コーティング層の表面に形成され、前記複数のコアの間で陥没する、請求項1に記載の太陽電池モジュール。 - 前記コーティング層の最大厚さは、前記コア凹凸の高さまたは幅より小さい、請求項2に記載の太陽電池モジュール。
- 前記コーティング層の最大厚さは、前記コアバンドルの外面に形成された前記コア凹凸の高さの1/10〜1/2である、請求項2に記載の太陽電池モジュール。
- 前記コアバンドルの外面を形成するコアの線幅は、70μm〜160μmであり、前記コーティング層の平均厚さは5μm〜20μmである、請求項2に記載の太陽電池モジュール。
- 前記コアは、銅(cu)、銀(Ag)、金(Au)、またはアルミニウム(Al)の内、いずれか1つで形成され、
前記コーティング層は、スズ(Sn)またはスズ(Sn)を含む合金で形成される、請求項1に記載の太陽電池モジュール。 - 前記複数の配線のそれぞれにおいて、前記電極と接続される第1部分の表面及び前記配線の中心に基づいて、第1部分の反対側である第2部分の表面には、前記配線凹凸が形成される、請求項1に記載の太陽電池モジュール。
- 前記コアバンドルは、前記複数のコアが少なくとも3つ以上の層で積層されて形成され、
前記第1部分と前記第2部分に積層されたコアの個数は、前記第1、第2部分との間に積層されたコアの個数より小さい、請求項7に記載の太陽電池モジュール。 - 前記配線の表面に形成された前記配線凹凸の幅は70μm〜150μmであり、
前記配線の表面に形成された前記配線凹凸の高さは10μm〜70μmである、請求項1に記載の太陽電池モジュール。 - 前記コアバンドルに備えられる前記複数のコアは、前記配線の長さ方向に長く伸びているか、互いにねじれている、請求項1に記載の太陽電池モジュール。
- 前記コアの断面は、円形、楕円形、または全体的に円形形状を有する多角形の内、少なくともいずれか一つである、請求項1に記載の太陽電池モジュール。
- 前記配線の最大線幅は200μm〜500μmである、請求項1に記載の太陽電池モジュール。
- 前記導電性接着剤の幅は、前記導電性接着剤と接続される前記配線凹凸の幅より大きく、前記配線の最大線幅より小さい、請求項1に記載の太陽電池モジュール。
- 前記導電性接着剤の幅は320μm〜380μmである、請求項13に記載の太陽電池モジュール。
- 前記導電性接着剤は、スズ(Sn)を含むはんだペーストの形態である、又は接着性樹脂内に複数の導電性粒子が分布される導電性接着ペースト形態を有する、請求項1に記載の太陽電池モジュール。
- 前記導電性接着剤は、接着性樹脂内に複数の導電性粒子が分布して形成された導電性接着ペーストの形態を有し、
前記接着性樹脂は、エポキシ系の樹脂、シリコン系の樹脂またはアクリル系の樹脂の内、少なくともいずれか一つの樹脂で形成され、
前記導電性粒子は、Ni、AgまたはSnBiの内、少なくとも1つを含んで形成される、請求項15に記載の太陽電池モジュール。 - 前記導電性粒子の大きさは、前記配線凹凸の幅または高さより小さい、請求項16に記載の太陽電池モジュール。
- 前記導電性粒子の大きさは1μm〜10μmである、請求項16に記載の太陽電池モジュール。
- 前記導電性接着剤に含まれる前記接着性樹脂の融点は、前記配線に含まれたコーティング層の融点より低い、請求項16に記載の太陽電池モジュール。
- 前記接着性樹脂の硬化温度は155℃〜185℃である、請求項16に記載の太陽電池モジュール。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020150187561A KR101751946B1 (ko) | 2015-12-28 | 2015-12-28 | 태양 전지 모듈 |
KR10-2015-0187561 | 2015-12-28 |
Publications (2)
Publication Number | Publication Date |
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JP2017120906A true JP2017120906A (ja) | 2017-07-06 |
JP6392307B2 JP6392307B2 (ja) | 2018-09-19 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2016253494A Expired - Fee Related JP6392307B2 (ja) | 2015-12-28 | 2016-12-27 | 太陽電池モジュール |
Country Status (5)
Country | Link |
---|---|
US (1) | US20170186899A1 (ja) |
EP (1) | EP3188257B1 (ja) |
JP (1) | JP6392307B2 (ja) |
KR (1) | KR101751946B1 (ja) |
CN (1) | CN107039552A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019169711A (ja) * | 2018-03-22 | 2019-10-03 | エルジー エレクトロニクス インコーポレイティド | 太陽電池パネル用配線材及びこれを含む太陽電池パネル |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111937162A (zh) | 2018-03-29 | 2020-11-13 | 太阳能公司 | 太阳能电池的基于导线的金属化和串接 |
CN111048612A (zh) * | 2019-12-26 | 2020-04-21 | 无锡市斯威克科技有限公司 | 一种多股铜线圆型涂锡光伏焊带及其制备方法与应用 |
CN111092134A (zh) * | 2019-12-26 | 2020-05-01 | 无锡市斯威克科技有限公司 | 一种多股铜线光伏焊带及其制备方法与应用 |
DE102021119776A1 (de) | 2021-07-29 | 2023-02-02 | Hanwha Q Cells Gmbh | Mehradriger Anschlussverbinder für Photovoltaikmodule |
DE102022122448A1 (de) | 2022-09-05 | 2024-03-07 | Hanwha Q Cells Gmbh | Solarmodul-Halbzeug und Verfahren zur Herstellung eines Solarmoduls |
Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004363293A (ja) * | 2003-06-04 | 2004-12-24 | Sharp Corp | 太陽電池モジュール及びその製造方法 |
JP2005243935A (ja) * | 2004-02-26 | 2005-09-08 | Shin Etsu Handotai Co Ltd | 太陽電池モジュール及び太陽電池モジュールの製造方法 |
JP2006140039A (ja) * | 2004-11-12 | 2006-06-01 | Hitachi Cable Ltd | リード線及びそれを用いた太陽電池 |
JP2012232320A (ja) * | 2011-04-28 | 2012-11-29 | Mitsubishi Cable Ind Ltd | 太陽電池用リード線の製造方法および太陽電池用リード線 |
JP2013080982A (ja) * | 2007-07-13 | 2013-05-02 | Sanyo Electric Co Ltd | 太陽電池モジュールの製造方法及び太陽電池モジュール製造装置 |
JP2013211266A (ja) * | 2012-02-29 | 2013-10-10 | Nippon Steel & Sumitomo Metal | テープ状導電材料、太陽電池用インターコネクター及び太陽電池モジュール |
EP2660878A1 (en) * | 2012-05-04 | 2013-11-06 | Sol Invictus Energy | Hybrid woven materials useful in the production of back-contact solar cells. |
JP2014203999A (ja) * | 2013-04-05 | 2014-10-27 | 日立化成株式会社 | 太陽電池セル及び太陽電池モジュール |
JP2015185731A (ja) * | 2014-03-25 | 2015-10-22 | デクセリアルズ株式会社 | 太陽電池モジュール及びその製造方法 |
WO2016096422A1 (en) * | 2014-12-15 | 2016-06-23 | Imec Vzw | Method for interconnecting back-contact photovoltaic cells |
JP2016219799A (ja) * | 2015-05-20 | 2016-12-22 | 株式会社マイティ | タブ電極および太陽電池モジュール |
WO2017009957A1 (ja) * | 2015-07-14 | 2017-01-19 | 三菱電機株式会社 | 太陽電池モジュールおよび太陽電池モジュールの製造方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3753278A (en) * | 1970-03-23 | 1973-08-21 | Tatsuta Densen Kk | Solder coated wire |
JP2001135846A (ja) * | 1999-11-05 | 2001-05-18 | Honda Motor Co Ltd | 太陽電池 |
JP2005191116A (ja) * | 2003-12-24 | 2005-07-14 | Kyocera Corp | 太陽電池素子接続用インナーリード及び太陽電池モジュール |
JP5288790B2 (ja) * | 2007-08-02 | 2013-09-11 | 三洋電機株式会社 | 太陽電池モジュール及びその製造方法 |
KR100924070B1 (ko) * | 2009-04-06 | 2009-10-27 | 백치흠 | 주석도금 알루미늄 연선 |
DE102010017180A1 (de) * | 2010-06-01 | 2011-12-01 | Solarworld Innovations Gmbh | Solarzelle, Solarmodul, und Verfahren zum Verdrahten einer Solarzelle, und Kontaktdraht |
KR101279975B1 (ko) * | 2010-10-05 | 2013-07-05 | 제일모직주식회사 | 도체간 전기적 접속 재료 |
JP2014002899A (ja) * | 2012-06-18 | 2014-01-09 | Sekisui Chem Co Ltd | 導電接着材料、太陽電池モジュール部品及び太陽電池モジュール部品の製造方法 |
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2015
- 2015-12-28 KR KR1020150187561A patent/KR101751946B1/ko active IP Right Grant
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2016
- 2016-12-27 EP EP16206937.1A patent/EP3188257B1/en not_active Not-in-force
- 2016-12-27 JP JP2016253494A patent/JP6392307B2/ja not_active Expired - Fee Related
- 2016-12-28 US US15/392,613 patent/US20170186899A1/en not_active Abandoned
- 2016-12-28 CN CN201611234830.6A patent/CN107039552A/zh active Pending
Patent Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004363293A (ja) * | 2003-06-04 | 2004-12-24 | Sharp Corp | 太陽電池モジュール及びその製造方法 |
JP2005243935A (ja) * | 2004-02-26 | 2005-09-08 | Shin Etsu Handotai Co Ltd | 太陽電池モジュール及び太陽電池モジュールの製造方法 |
JP2006140039A (ja) * | 2004-11-12 | 2006-06-01 | Hitachi Cable Ltd | リード線及びそれを用いた太陽電池 |
JP2013080982A (ja) * | 2007-07-13 | 2013-05-02 | Sanyo Electric Co Ltd | 太陽電池モジュールの製造方法及び太陽電池モジュール製造装置 |
JP2012232320A (ja) * | 2011-04-28 | 2012-11-29 | Mitsubishi Cable Ind Ltd | 太陽電池用リード線の製造方法および太陽電池用リード線 |
JP2013211266A (ja) * | 2012-02-29 | 2013-10-10 | Nippon Steel & Sumitomo Metal | テープ状導電材料、太陽電池用インターコネクター及び太陽電池モジュール |
EP2660878A1 (en) * | 2012-05-04 | 2013-11-06 | Sol Invictus Energy | Hybrid woven materials useful in the production of back-contact solar cells. |
JP2014203999A (ja) * | 2013-04-05 | 2014-10-27 | 日立化成株式会社 | 太陽電池セル及び太陽電池モジュール |
JP2015185731A (ja) * | 2014-03-25 | 2015-10-22 | デクセリアルズ株式会社 | 太陽電池モジュール及びその製造方法 |
WO2016096422A1 (en) * | 2014-12-15 | 2016-06-23 | Imec Vzw | Method for interconnecting back-contact photovoltaic cells |
JP2016219799A (ja) * | 2015-05-20 | 2016-12-22 | 株式会社マイティ | タブ電極および太陽電池モジュール |
WO2017009957A1 (ja) * | 2015-07-14 | 2017-01-19 | 三菱電機株式会社 | 太陽電池モジュールおよび太陽電池モジュールの製造方法 |
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US20170186899A1 (en) | 2017-06-29 |
KR101751946B1 (ko) | 2017-06-28 |
EP3188257B1 (en) | 2019-05-15 |
CN107039552A (zh) | 2017-08-11 |
EP3188257A1 (en) | 2017-07-05 |
JP6392307B2 (ja) | 2018-09-19 |
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