JP6240267B2 - 太陽電池モジュール - Google Patents
太陽電池モジュール Download PDFInfo
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- JP6240267B2 JP6240267B2 JP2016134900A JP2016134900A JP6240267B2 JP 6240267 B2 JP6240267 B2 JP 6240267B2 JP 2016134900 A JP2016134900 A JP 2016134900A JP 2016134900 A JP2016134900 A JP 2016134900A JP 6240267 B2 JP6240267 B2 JP 6240267B2
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- 239000010410 layer Substances 0.000 claims description 88
- 239000004065 semiconductor Substances 0.000 claims description 69
- 239000000758 substrate Substances 0.000 claims description 61
- 239000000853 adhesive Substances 0.000 claims description 49
- 230000001070 adhesive effect Effects 0.000 claims description 49
- 239000012535 impurity Substances 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 15
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 14
- 239000011247 coating layer Substances 0.000 claims description 14
- 239000005038 ethylene vinyl acetate Substances 0.000 claims description 12
- 239000000945 filler Substances 0.000 claims description 12
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 claims description 11
- DQXBYHZEEUGOBF-UHFFFAOYSA-N but-3-enoic acid;ethene Chemical compound C=C.OC(=O)CC=C DQXBYHZEEUGOBF-UHFFFAOYSA-N 0.000 claims description 9
- 229910000679 solder Inorganic materials 0.000 claims description 9
- 239000004593 Epoxy Substances 0.000 claims description 8
- 239000007769 metal material Substances 0.000 claims description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 239000010936 titanium Substances 0.000 claims description 6
- 229910007637 SnAg Inorganic materials 0.000 claims description 5
- 229910007116 SnPb Inorganic materials 0.000 claims description 5
- 229910000838 Al alloy Inorganic materials 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- 239000004642 Polyimide Substances 0.000 claims description 3
- NPXOKRUENSOPAO-UHFFFAOYSA-N Raney nickel Chemical compound [Al].[Ni] NPXOKRUENSOPAO-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910000756 V alloy Inorganic materials 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- HBVFXTAPOLSOPB-UHFFFAOYSA-N nickel vanadium Chemical compound [V].[Ni] HBVFXTAPOLSOPB-UHFFFAOYSA-N 0.000 claims description 3
- 229920001721 polyimide Polymers 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 230000005684 electric field Effects 0.000 description 15
- 238000000034 method Methods 0.000 description 10
- 239000011810 insulating material Substances 0.000 description 8
- 238000002161 passivation Methods 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 229910004205 SiNX Inorganic materials 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000000969 carrier Substances 0.000 description 5
- 238000010030 laminating Methods 0.000 description 5
- 239000002210 silicon-based material Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 238000003475 lamination Methods 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 239000004698 Polyethylene Substances 0.000 description 2
- -1 SnBi Substances 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 229920002313 fluoropolymer Polymers 0.000 description 2
- 239000004811 fluoropolymer Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004012 SiCx Inorganic materials 0.000 description 1
- 229910004286 SiNxOy Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000005341 toughened glass Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0516—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module specially adapted for interconnection of back-contact solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/049—Protective back sheets
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0512—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module made of a particular material or composition of materials
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
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- Y02E10/547—Monocrystalline silicon PV cells
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- Condensed Matter Physics & Semiconductors (AREA)
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- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
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Description
Claims (14)
- 第1導電性の不純物がドーピングされた半導体基板と、
前記第1導電性と反対の第2導電性の不純物がドーピングされるエミッタ部と、
前記半導体基板より前記第1導電性の不純物を高濃度にドーピングされる背面電界部と、
前記エミッタ部に接続する第1電極と、
前記背面電界部に接続する第2電極と、
それぞれが前記第1、第2電極と交差する方向に長く形成され、前記複数の第1電極と導電性接着剤を介して接続され、前記複数の第2電極と絶縁層によって絶縁される複数の第1導電性配線と、前記複数の第2電極と前記導電性接着剤を介して接続され、前記複数の第1電極と前記絶縁層によって絶縁される複数の第2導電性配線を含み、
前記第1導電性配線と前記第1電極との間及び前記第2導電性配線と前記第2電極との間に位置する前記導電性接着剤の厚さは、前記第1導電性配線と前記第2電極との間及び前記第2導電性配線と前記第1電極との間に位置する前記絶縁層の厚さより厚い、太陽電池モジュール。 - 前記絶縁層と、前記第1及び第2導電性配線の間は、互いに離隔されている、請求項1に記載の太陽電池モジュール。
- 前記絶縁層と、前記第1及び第2導電性配線との間の離隔された空間には、外部の衝撃から前記半導体基板を保護する充填材がさらに位置する、請求項2に記載の太陽電池モジュール。
- 前記絶縁層は、エポキシ、ポリイミドまたはシリコンのうちの少なくともいずれか1つを含む、請求項3に記載の太陽電池モジュール。
- 前記充填材の材質は、前記絶縁層の材質と異なる、請求項4に記載の太陽電池モジュール。
- 前記充填材は、EVA(EVA、ethylene vinyl acetate)である、請求項4に記載の太陽電池モジュール。
- 前記導電性接着剤の材質は、スズ(Sn)を含む、請求項1に記載の太陽電池モジュール。
- 前記導電性接着剤は、ソルダーペースト(solder paste)エポキシソルダーペースト(epoxy solder paste)または導電性ペースト(Conductive psate)の内、いずれか1つで形成される、請求項7に記載の太陽電池モジュール。
- 前記第1、第2電極のそれぞれは、前記導電性接着剤と他の金属材質を含む、請求項1に記載の太陽電池モジュール。
- 前記第1、第2電極のそれぞれは、チタン(Ti)、銀(Ag)、アルミニウム(Al)、ニッケル−バナジウム合金(NiV)、ニッケル、ニッケル−アルミニウム合金(NixAly)、モリブデン(Mo)、スズ(Sn)の内、少なくとも1つの材質が少なくとも1つの層で形成される、請求項9に記載の太陽電池モジュール。
- 前記第1、第2導電性配線は、
銅(Cu)またはアルミニウム(Al)の内、少なくとも1つの材質を含むコアと、
前記コアの表面にコーティングされており、スズ(Sn)を含むコーティング層を含む、請求項1に記載の太陽電池モジュール。 - 前記コーティング層は、SnPb、SnAgCu、SnBiAg、SnBi、SnまたはSnAgの内、少なくとも1つを含む、請求項11に記載の太陽電池モジュール。
- 前記コアの厚さは50μm〜250μmの間であり、前記コーティング層の厚さは1μm〜30μmの間である、請求項11に記載の太陽電池モジュール。
- 前記導電性接着剤の厚さは、10μm〜100μmの間であり、前記絶縁層の厚さは1μm〜50μmの間である、請求項1に記載の太陽電池モジュール。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2015-0096930 | 2015-07-08 | ||
KR1020150096930A KR101658733B1 (ko) | 2015-07-08 | 2015-07-08 | 태양 전지 모듈 |
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JP2017022380A JP2017022380A (ja) | 2017-01-26 |
JP6240267B2 true JP6240267B2 (ja) | 2017-11-29 |
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JP2016134900A Active JP6240267B2 (ja) | 2015-07-08 | 2016-07-07 | 太陽電池モジュール |
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US (1) | US10516070B2 (ja) |
EP (2) | EP3570332B1 (ja) |
JP (1) | JP6240267B2 (ja) |
KR (1) | KR101658733B1 (ja) |
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KR20150100146A (ko) * | 2014-02-24 | 2015-09-02 | 엘지전자 주식회사 | 태양 전지 모듈 |
KR101820103B1 (ko) * | 2014-10-27 | 2018-01-18 | 엘지전자 주식회사 | 태양전지 모듈, 그 리페어 방법 및 리페어 장치 |
KR102457928B1 (ko) * | 2017-08-04 | 2022-10-25 | 상라오 징코 솔라 테크놀러지 디벨롭먼트 컴퍼니, 리미티드 | 태양 전지 패널 및 이의 제조 방법 |
DE102018105472A1 (de) * | 2018-03-09 | 2019-09-12 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Herstellung einer photovoltaischen Solarzelle, photovoltaische Solarzelle und Photovoltaikmodul |
CN108649087B (zh) * | 2018-05-09 | 2020-11-13 | 晶澳太阳能有限公司 | 一种太阳能电池组件及其制备方法 |
EP3573113B1 (en) * | 2018-05-24 | 2020-04-15 | Solyco Technology GmbH | Photovoltaic module |
CN112397607A (zh) * | 2019-08-16 | 2021-02-23 | 福建金石能源有限公司 | 一种硅基柔性电池及其模组的制作方法 |
CN116722056A (zh) | 2022-05-26 | 2023-09-08 | 浙江晶科能源有限公司 | 太阳能电池及太阳能电池的制备方法、光伏组件 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080216887A1 (en) | 2006-12-22 | 2008-09-11 | Advent Solar, Inc. | Interconnect Technologies for Back Contact Solar Cells and Modules |
JP2008205137A (ja) * | 2007-02-19 | 2008-09-04 | Sanyo Electric Co Ltd | 太陽電池及び太陽電池モジュール |
JP2009206366A (ja) | 2008-02-28 | 2009-09-10 | Sanyo Electric Co Ltd | 太陽電池モジュール |
JP5410050B2 (ja) | 2008-08-08 | 2014-02-05 | 三洋電機株式会社 | 太陽電池モジュール |
JP2011003724A (ja) | 2009-06-18 | 2011-01-06 | Sanyo Electric Co Ltd | 太陽電池モジュール |
JP4678698B2 (ja) * | 2009-09-15 | 2011-04-27 | シャープ株式会社 | 太陽電池モジュールおよびその製造方法 |
US8840700B2 (en) * | 2009-11-05 | 2014-09-23 | Ormet Circuits, Inc. | Preparation of metallurgic network compositions and methods of use thereof |
KR20140015247A (ko) * | 2010-08-05 | 2014-02-06 | 솔렉셀, 인크. | 태양전지용 백플레인 보강 및 상호연결부 |
JP5140132B2 (ja) | 2010-10-29 | 2013-02-06 | シャープ株式会社 | 配線基板付き裏面電極型太陽電池セル、太陽電池モジュールおよび配線基板付き裏面電極型太陽電池セルの製造方法 |
US20120167978A1 (en) * | 2011-01-03 | 2012-07-05 | Lg Electronics Inc. | Solar cell and method for manufacturing the same |
US20140124027A1 (en) * | 2011-05-31 | 2014-05-08 | Kyocera Corporation | Solar cell and method of manufacturing a solar cell |
JP5729474B2 (ja) | 2011-07-25 | 2015-06-03 | 日立化成株式会社 | 配線部材及びその製造方法、並びに配線部材接着体の製造方法 |
EP2624303A1 (en) | 2012-01-31 | 2013-08-07 | Samsung SDI Co., Ltd. | Solar cell module and fabrication method thereof |
US9293635B2 (en) * | 2012-03-19 | 2016-03-22 | Rec Solar Pte. Ltd. | Back junction back contact solar cell module and method of manufacturing the same |
WO2014077688A1 (en) | 2012-11-16 | 2014-05-22 | Dsm Ip Assets B.V. | D1531 radiation-curable resin composition for wire coating layer formation |
NL2009836C2 (en) * | 2012-11-19 | 2014-05-21 | Stichting Energie | Back-contacted solar panel and method for manufacturing such a solar panel. |
KR101441975B1 (ko) * | 2012-12-11 | 2014-09-25 | 주식회사 제우스 | 후면전극형 태양전지모듈과 이것의 제조방법 |
KR102124520B1 (ko) | 2013-10-29 | 2020-06-18 | 엘지전자 주식회사 | 태양 전지 모듈 및 그 제조 방법 |
KR102132940B1 (ko) * | 2013-11-29 | 2020-07-10 | 엘지전자 주식회사 | 태양 전지 및 그 제조 방법 |
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