JP5735474B2 - 太陽電池及びその製造方法 - Google Patents
太陽電池及びその製造方法 Download PDFInfo
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- JP5735474B2 JP5735474B2 JP2012251206A JP2012251206A JP5735474B2 JP 5735474 B2 JP5735474 B2 JP 5735474B2 JP 2012251206 A JP2012251206 A JP 2012251206A JP 2012251206 A JP2012251206 A JP 2012251206A JP 5735474 B2 JP5735474 B2 JP 5735474B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 27
- 239000000758 substrate Substances 0.000 claims description 127
- 239000012535 impurity Substances 0.000 claims description 92
- 230000005684 electric field Effects 0.000 claims description 68
- 238000007747 plating Methods 0.000 claims description 63
- 238000000034 method Methods 0.000 claims description 56
- 239000004065 semiconductor Substances 0.000 claims description 20
- 230000001681 protective effect Effects 0.000 claims description 10
- 239000010408 film Substances 0.000 description 89
- 239000000463 material Substances 0.000 description 40
- 229910052709 silver Inorganic materials 0.000 description 39
- 239000004332 silver Substances 0.000 description 39
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 37
- 230000015572 biosynthetic process Effects 0.000 description 35
- 238000005755 formation reaction Methods 0.000 description 35
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 30
- 229910052751 metal Inorganic materials 0.000 description 15
- 239000002184 metal Substances 0.000 description 15
- 238000007650 screen-printing Methods 0.000 description 14
- 229910052782 aluminium Inorganic materials 0.000 description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 10
- 229910052759 nickel Inorganic materials 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 230000003667 anti-reflective effect Effects 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 239000010949 copper Substances 0.000 description 8
- 239000011521 glass Substances 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 239000011574 phosphorus Substances 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 230000001678 irradiating effect Effects 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 239000011701 zinc Substances 0.000 description 4
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- 229910004205 SiNX Inorganic materials 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 229910052797 bismuth Inorganic materials 0.000 description 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 3
- 229910021334 nickel silicide Inorganic materials 0.000 description 3
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical group [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical class N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- -1 B 2 O 3 Substances 0.000 description 2
- 229910020286 SiOxNy Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 150000003376 silicon Chemical class 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 229910016909 AlxOy Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000012789 electroconductive film Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 229940098221 silver cyanide Drugs 0.000 description 1
- LFAGQMCIGQNPJG-UHFFFAOYSA-N silver cyanide Chemical compound [Ag+].N#[C-] LFAGQMCIGQNPJG-UHFFFAOYSA-N 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical class [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
- H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
- H01L31/0201—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules comprising specially adapted module bus-bar structures
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- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
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- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Description
並びに伸びていて、各前面バスバー142は複数の第2開口部182を介して露出した第2エミッタ部分1212の複数のバスバー用第2エミッタ部分12bと電気的及び物理的に接続している。
一般的にスクリーン印刷法(screen printing)を用いて銀(Ag)を含む銀ペースト(Ag paste)を前面電極部の形状にしたがって決まったパターンに塗布した後熱処理して製作する。
Claims (27)
- 第1導電型を有する基板と、
前記基板に位置し前記第1導電型と反対の第2導電型を有するエミッタ部と、
前記エミッタ部上に位置し、
前記エミッタ部を露出する第1開口部及び前記エミッタ部を露出し互いに離隔された複数の第2開口部を備えた反射防止部と、
前記第1開口部を介して露出した前記エミッタ部の第1部分の上に位置し、前記エミッタ部の前記第1部分と接続している第1電極と、
前記複数の第2開口部を介して露出した前記エミッタ部の第2部分の上に位置し、前記エミッタ部の前記第2部分及び前記第1電極と接続している第1バスバーと、
前記基板に位置し前記基板に接続している第2電極を含み、
前記反射防止部は前記複数の第2開口部が形成された第1バスバー形成領域を含み、
前記第1電極と前記第1バスバーはメッキ法で形成し、
前記第1バスバーは前記第1バスバー形成領域に位置し、
前記第1バスバー形成領域で、前記第1バスバー形成領域の中央部分に位置した隣接した第2開口部の間の間隔は、前記第1バスバー形成領域の端部分に位置した隣接した第2開口部の間の間隔より大きく、
前記第1バスバーの端部分の高さは前記第1バスバーの中央部分の高さより高く、
前記第1バスバー形成領域の中央部分に位置した隣接した二つの第2開口部の間の間隔は、前記第1バスバー形成領域の端部分に位置した隣接した二つの第2開口部の間の間隔の1.5倍乃至5倍である太陽電池。 - 前記複数の第2開口部の個数は30個乃至70個である、請求項1記載の太陽電池。
- 前記反射防止部の第1バスバー形成領域の幅に対してその下部に位置した前記複数の第2開口部のすべて幅の割合が1:0.2乃至0.5である、請求項1記載の太陽電池。
- 隣接した前記二つの第2開口部の間隔は15μm乃至30μmである、請求項3記載の太陽電池。
- 前記第1バスバーは前記複数の第2開口部の間に位置した反射防止部の上に追加で位置する、請求項1記載の太陽電池。
- 前記第1バスバーの上部面は曲面である、請求項1記載の太陽電池。
- 前記反射防止部上に位置した前記第1バスバーの高さは前記第2開口部を介して露出した前記エミッタ部の第2部分の上に位置した前記第1バスバーの高さより低い、請求項6記載の太陽電池。
- 前記第1開口部は前記第1電極下部で第1方向に伸びていて、
前記複数の第2開口部それぞれは前記第1バスバー下部で前記第1方向と交差する第2方向に伸びている、請求項1記載の太陽電池。 - 前記第1開口部及び前記第2開口部の中で少なくとも一つの側面は平坦面である、請求項1記載の太陽電池。
- 前記第1開口部及び前記第2開口部の中で少なくとも一つの側面は凹凸面である、請求項1記載の太陽電池。
- 前記エミッタ部は第1シート抵抗値を有する第1エミッタ部分と前記第1シート抵抗値より小さな第2シート抵抗値を有する第2エミッタ部分を含む、請求項1記載の太陽電池。
- 前記第2エミッタ部分は前記第1開口部を介して露出した前記エミッタ部の前記第1部分と前記複数の第2開口部を介して露出した前記エミッタ部の前記第2部分に位置する、
請求項11記載の太陽電池。 - 前記第2エミッタ部分の幅は前記第1開口部の幅及び前記複数の第2開口部それぞれの幅と同一である、請求項12記載の太陽電池。
- 前記第1開口部を介して露出した前記エミッタ部の前記第1部分に形成された第2エミッタ部分の幅は前記第1電極の幅より小さい、請求項12記載の太陽電池。
- 前記反射防止部は前記複数の第2開口部が形成された第1バスバー形成領域を含み、
前記第1バスバーは前記第1バスバー形成領域に位置し、前記第1バスバー形成領域で、前記第1バスバー形成領域の幅より前記第1バスバーの幅がさらに大きい、請求項12記載の太陽電池。 - 前記第2電極の下部に位置した前記基板に位置し前記基板と接続されていて前記第1導電型を有する電界部をさらに含む、請求項1記載の太陽電池。
- 前記電界部上に位置し前記電界部の第1部分を露出する第3開口部を備える保護部をさらに含み、
前記第2電極は前記第3開口部を介して露出した前記電界部の前記第1部分の上に位置し前記電界部と接続している、請求項16記載の太陽電池。 - 前記保護部は前記電界部の前記第1部分と異なる前記電界部の第2部分に互いに離隔されるように位置した複数の第4開口部をさらに備え、
前記太陽電池は前記複数の第4開口部を介して露出した前記電界部の前記第2部分の上に位置し前記第2電極と接続している第2バスバーをさらに備える、請求項17記載の太陽電池。 - 前記複数の第4開口部の個数は30個乃至70個である、請求項18記載の太陽電池。
- 前記保護部の第2バスバー形成領域の幅に対してその下部に位置した前記複数の第4開口部のすべて幅の割合が1:0.2乃至0.5である、請求項18記載の太陽電池。
- 前記複数の第4開口部で隣接した第4開口部の間の間隔は相異なる、請求項18記載の太陽電池。
- 前記第2バスバーは前記複数の第2開口部の間に位置した保護部上に追加で位置する、請求項15記載の太陽電池。
- 第1導電型を有する半導体基板の第1面に前記第1導電型または前記第1導電型と異なる第2導電型を有する不純物をドーピングして不純物部を形成する段階と、
前記不純物部上に保護部を形成する段階と、
前記保護部上にレーザービームを選択的に照射し、前記保護部に前記不純物部の第1部分を露出する第1開口部と前記第1開口部と離隔されており前記不純物部の第2部分を露出する複数の第2開口部を形成する段階と、
前記第1開口部を介して露出した前記不純物部の前記第1部分の上に電極を形成し、前記複数の第2開口部を介して露出した前記不純物部の前記第2部分の上に前記電極と接続されるバスバーを形成する段階と、
を含み、
前記反射防止部は前記複数の第2開口部が形成された第1バスバー形成領域を含み、
前記第1バスバーは前記第1バスバー形成領域に位置し、
前記第1バスバー形成領域で、前記第1バスバー形成領域の中央部分に位置した隣接した第2開口部の間の間隔は、前記第1バスバー形成領域の端部分に位置した隣接した第2開口部の間の間隔より大きく、
前記第1バスバーの端部分の高さは前記第1バスバーの中央部分の高さより高く、
前記第1電極と前記第1バスバーはメッキ法を用いた形成し、
前記第1バスバー形成領域の中央部分に位置した隣接した二つの第2開口部の間の間隔は、前記第1バスバー形成領域の端部分に位置した隣接した二つの第2開口部の間の間隔の1.5倍乃至5倍である太陽電池の製造方法。 - 前記第1開口部の幅と前記第2開口部の幅は同一である、請求項23記載の太陽電池の製造方法。
- 前記複数の第2開口部で隣接した二つの第2開口部の間の間隔は相異なる、請求項23記載の太陽電池の製造方法。
- 隣接した前記二つの第2開口部の間隔は15μm乃至30μmである、請求項25記載の太陽電池の製造方法。
- 前記保護部上に前記不純物部と同一である導電型を有する不純物膜を形成する段階をさらに含み、
前記レーザービームは前記不純物膜の上に選択的に照射され、
前記保護部下部に位置した前記不純物部の部分は第1シート抵抗値を有する第1不純物部分になり、
前記第1開口部と前記複数の第2開口部を介して露出した前記不純物部の前記第1部分と前記第2部分は前記第1シート抵抗値より小さな第2シート抵抗値を有する第2不純物部分になる、請求項23記載の太陽電池の製造方法。
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