JP5628952B2 - 太陽電池 - Google Patents
太陽電池 Download PDFInfo
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- JP5628952B2 JP5628952B2 JP2013058846A JP2013058846A JP5628952B2 JP 5628952 B2 JP5628952 B2 JP 5628952B2 JP 2013058846 A JP2013058846 A JP 2013058846A JP 2013058846 A JP2013058846 A JP 2013058846A JP 5628952 B2 JP5628952 B2 JP 5628952B2
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- 239000000758 substrate Substances 0.000 claims description 87
- 239000012535 impurity Substances 0.000 claims description 28
- 238000000034 method Methods 0.000 description 18
- 239000004065 semiconductor Substances 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 12
- 230000005684 electric field Effects 0.000 description 9
- 239000010949 copper Substances 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- 239000000969 carrier Substances 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- -1 [eg Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Description
Claims (17)
- 第1導電性不純物を含有する基板と、
前記基板の第1シートに配置され、前記第1導電性不純物と反対の第2導電性不純物を含有して前記基板とp−n接合を形成するエミッタ部と、
前記エミッタ部上に位置する反射防止膜と、
前記反射防止膜の上に位置して、前記エミッタ部と接続する第1電極と、
前記基板の第2シート上に配置して、前記基板と接続する第2電極とを含み、
前記反射防止膜は前記第1電極の下に位置する第1領域と前記第1電極が位置しない残りの第2領域を含み、
前記反射防止膜中で前記第1電極の下に位置する第1領域は、複数の開口部を備え、前記第1電極は、前記複数の開口部を介して露出された前記エミッタ部に接触し、
前記複数の開口部の各々の最大幅は4μm以下であり、前記複数の開口部の間の最大間隔は5μm以下であり、
前記反射防止膜の前記第1領域及び前記第2領域と接する前記エミッタ部の第1シートには、突出形状を有する複数の凹凸が形成され、
前記エミッタ部の第1シート内で前記反射防止膜の第1領域に形成した複数の開口部を介して露出した凹凸の突出高さは、前記エミッタ部の第1シート内で前記反射防止膜の第2領域の下に形成した凹凸の突出高さより小さい、太陽電池。 - 前記反射防止膜において、前記複数の開口部は、前記第1領域内に形成され、第2領域には形成されない、請求項1記載の太陽電池。
- 前記反射防止膜の第1領域は、第1方向に伸びるフィンガー領域と前記第1方向と交差する第2方向に伸びるバスバー領域を含む、請求項1記載の太陽電池。
- 前記反射防止膜の第1領域内に形成される前記複数の開口部それぞれは、互いに離隔して配置される、請求項1記載の太陽電池。
- 前記複数の開口部の平面形状は、互いに離隔したドット形状または多角形形状を含む、請求項4記載の太陽電池。
- 前記反射防止膜の第1領域の中で、前記フィンガー領域の幅は5μm〜20μmの間である、請求項3記載の太陽電池。
- 前記エミッタ部は、第1シート抵抗値を有する低濃度ドーピング部と前記第1シート抵抗値より高い第2シート抵抗値を有する高濃度ドーピング部を含み、
前記高濃度ドーピング部は、前記反射防止膜の第1領域の下に位置し、
前記低濃度ドーピング部は、前記反射防止膜の第2領域の下に位置する、請求項2記載の太陽電池。 - 前記高濃度ドーピング部は、前記反射防止膜の第1領域内に形成された前記複数の開口部のそれぞれの下に位置する、請求項7記載の太陽電池。
- 前記反射防止膜の第1領域の下に位置する前記のエミッタ部の中で、
前記複数の開口部のそれぞれの下に位置する高濃度ドーピング部を除外した第1領域の残りの部分は、前記低濃度ドーピング部をさらに含む、請求項7記載の太陽電池。 - 前記高濃度ドーピング部は、前記複数の開口部それぞれの下に位置して複数本で形成される、請求項7記載の太陽電池。
- 前記複数本の高濃度ドーピング部は平面で見たときに島形で形成され、一部は互いに離隔され、又は、一部は互に接続される、請求項10記載の太陽電池。
- 前記開口部の開口幅は、前記開口部の下に形成された前記高濃度ドーピング部の幅より狭い、請求項7記載の太陽電池。
- 前記複数の開口部の下に形成された前記高濃度ドーピング部それぞれの幅の合計は、前記第1電極の幅より狭い、請求項10記載の太陽電池。
- 前記高濃度ドーピング部は、前記反射防止膜の第1領域内に形成された前記複数の開口部を介して前記第1電極と直接接触する、請求項7記載の太陽電池。
- 前記エミッタ部の第1シートの内前記反射防止膜の第2領域の下に形成される低濃度ドーピング部に形成された凹凸の突起形状はピラミッド形状を含む、請求項7記載の太陽電池。
- 前記エミッタ部の第1シートの内で前記反射防止膜の第1領域に形成した複数の開口部を介して露出された高濃度ドーピング部に形成された凹凸の突起形状はピラミッド形状と異なる、請求項15記載の太陽電池。
- 前記第1電極は、前記エミッタ部の内部に埋め込まれず、前記反射防止膜の開口部を介して露出された前記エミッタ部の表面に接触される、請求項1記載の太陽電池。
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KR10-2012-0068443 | 2012-06-26 | ||
KR1020120068443A KR101921738B1 (ko) | 2012-06-26 | 2012-06-26 | 태양 전지 |
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JP2014007382A JP2014007382A (ja) | 2014-01-16 |
JP5628952B2 true JP5628952B2 (ja) | 2014-11-19 |
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US (1) | US10573767B2 (ja) |
EP (1) | EP2680313B1 (ja) |
JP (1) | JP5628952B2 (ja) |
KR (1) | KR101921738B1 (ja) |
CN (1) | CN103515456B (ja) |
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Publication number | Priority date | Publication date | Assignee | Title |
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TWI583010B (zh) * | 2016-07-05 | 2017-05-11 | 新日光能源科技股份有限公司 | 太陽能電池 |
JP7064823B2 (ja) * | 2016-08-31 | 2022-05-11 | 株式会社マテリアル・コンセプト | 太陽電池及びその製造方法 |
CN112349809B (zh) * | 2020-10-22 | 2023-06-06 | 泰州中来光电科技有限公司 | 一种局域发射极的太阳能电池及其制备方法 |
CN114334911B (zh) | 2022-03-03 | 2022-08-05 | 晶科能源(海宁)有限公司 | 光伏电池及其形成方法、光伏组件 |
CN116722056A (zh) | 2022-05-26 | 2023-09-08 | 浙江晶科能源有限公司 | 太阳能电池及太阳能电池的制备方法、光伏组件 |
CN116722054A (zh) * | 2022-06-10 | 2023-09-08 | 浙江晶科能源有限公司 | 太阳能电池及太阳能电池的制备方法、光伏组件 |
CN114823951A (zh) * | 2022-06-28 | 2022-07-29 | 晶科能源(海宁)有限公司 | 太阳能电池及光伏组件 |
CN115249751B (zh) * | 2022-07-27 | 2023-08-29 | 浙江晶科能源有限公司 | 改善选择性发射极与金属印刷对位的方法 |
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JPS6489569A (en) * | 1987-09-30 | 1989-04-04 | Sharp Kk | Solar cell element |
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US5356488A (en) * | 1991-12-27 | 1994-10-18 | Rudolf Hezel | Solar cell and method for its manufacture |
JP3244369B2 (ja) * | 1993-11-19 | 2002-01-07 | 三洋電機株式会社 | ヘテロ接合を有する光起電力装置 |
KR100366349B1 (ko) * | 2001-01-03 | 2002-12-31 | 삼성에스디아이 주식회사 | 태양 전지 및 그의 제조 방법 |
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CN103515456B (zh) | 2017-03-01 |
CN103515456A (zh) | 2014-01-15 |
KR101921738B1 (ko) | 2018-11-23 |
KR20140003729A (ko) | 2014-01-10 |
US10573767B2 (en) | 2020-02-25 |
EP2680313A2 (en) | 2014-01-01 |
JP2014007382A (ja) | 2014-01-16 |
US20130340822A1 (en) | 2013-12-26 |
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EP2680313B1 (en) | 2017-11-01 |
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