CN2550906Y - 立体光双面结光电池 - Google Patents

立体光双面结光电池 Download PDF

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Publication number
CN2550906Y
CN2550906Y CN 02227797 CN02227797U CN2550906Y CN 2550906 Y CN2550906 Y CN 2550906Y CN 02227797 CN02227797 CN 02227797 CN 02227797 U CN02227797 U CN 02227797U CN 2550906 Y CN2550906 Y CN 2550906Y
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light
substrate
knot
junction
utility
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李映华
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Priority to PCT/CN2003/000372 priority patent/WO2003100870A1/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0687—Multiple junction or tandem solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

Abstract

一种立体光双面结光电池，由基片、P－N结、引出电极构成，基片两面分别是P－N结、N－P结，P－N结、N－P结上面是引出电极；引出电极由透明导电材料制成；基片是单晶硅、或结晶硅、或薄膜；本实用新型能利用多面光，使光电转换效率高，成本低。

Description

立体光双面结光电池
技术领域
本实用新型涉及通过光伏电池将太阳能转换为电能技术，更具体地是立体光双面结光电池。
背景技术
目前，国内外生产的各类光电池都是单面结构，图1是现有光电池结构示意图，如图1所示，主要由基片1，在基片1正面的P-N结2构成，基片1背面和P--N结上面是镀银引出电极3。这种结构只能通过基片1正面的P--N结2利用正面直射光源，不能利用反面的散射光和任何方面反射到背面的散射光。因此，光电转换效率低，只有15％-24％，成本昂贵，不利于普及使用。提高光电转换效率和降低峰瓦成本就成为国内外着重攻关解决的共同课题。
实用新型内容
本实用新型的目的是克服现有技术中的不足，提供一种能利用多面光，使光电转换效率高，成本低的立体光双面结光电池。
本实用新型的光电池的基片两面分别是P-N结、N-P结，P-N结、N-P结上面是引出电极。
所述引出电极由透明导电材料制成，可以提高对光的利用率。
可见，基片两面的P-N结、N-P结构成P-N-P-N串联电路。
所述的基片是单晶硅、或结晶硅、或薄膜。
本实用新型可运用于把太阳能通过光伏电池转换为电能的所有应用领域。
本实用新型与现有技术相比具有如下优点：除了可以通过正面的P-N结利用正面直射光源，还可以通过反面的P--N结充分利用常规电池背面的散射光和反射光，相对单面光而言，是利用立体光，大大地提高了光电转换效率和降低了成本。
附图说明
图1是现有光电池结构示意图；
图2是本实用新型的立体光双面结光电池结构示意图。
具体实施方式
如图1所示，主要由基片1，在基片1正面的P-N结2构成，基片1背面和P--N结上面是镀银引出电极3。
如图2所示，基片1两面分别是P-N结2、N-P结4，P-N结2、N-P结4上面是透明导电材料制成的引出电极5。本实用新型产品可利用各类光电池已有的生产线进行生产，只需要在原生产工艺形成结的环节加上一道形成P-N结的工艺，在原产品的背面增加一个P-N结，并镀上防氧化层。底面的镀银电极采改用透明导电材料。

Claims (3)

1、一种立体光双面结光电池，由基片、P-N结、引出电极构成，其特征在于基片两面分别是P-N结、N-P结，P-N结、N-P结上面是引出电极。
2、根据权利要求1所述的立体光双面结光电池，其特征在于所述引出电极由透明导电材料制成。
3、根据权利要求1所述的立体光双面结光电池，其特征在于所述基片是单晶硅、或结晶硅、或薄膜。
CN 02227797 2002-05-27 2002-05-27 立体光双面结光电池 Expired - Lifetime CN2550906Y (zh)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN 02227797 CN2550906Y (zh) 2002-05-27 2002-05-27 立体光双面结光电池
AU2003242125A AU2003242125A1 (en) 2002-05-27 2003-05-21 Stereo-light double-junction photovolatic cell
PCT/CN2003/000372 WO2003100870A1 (fr) 2002-05-27 2003-05-21 Cellule photovoltaique double jonction a lumiere stereo

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Application Number Priority Date Filing Date Title
CN 02227797 CN2550906Y (zh) 2002-05-27 2002-05-27 立体光双面结光电池

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AU (1) AU2003242125A1 (zh)
WO (1) WO2003100870A1 (zh)

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WO2009146592A1 (zh) * 2008-06-05 2009-12-10 Gu Jieyu 太阳能电池的光伏板及带有该光伏板的集光发电装置
CN101312220B (zh) * 2007-05-25 2010-06-09 财团法人工业技术研究院 双面可吸光发电的薄膜太阳电池
CN102157587A (zh) * 2011-04-29 2011-08-17 浙江吉利汽车研究院有限公司 一种太阳能电池板
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US8237151B2 (en) 2009-01-09 2012-08-07 Taiwan Semiconductor Manufacturing Company, Ltd. Diode-based devices and methods for making the same
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US8304805B2 (en) 2009-01-09 2012-11-06 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor diodes fabricated by aspect ratio trapping with coalesced films
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US8324660B2 (en) 2005-05-17 2012-12-04 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
US8329541B2 (en) 2007-06-15 2012-12-11 Taiwan Semiconductor Manufacturing Company, Ltd. InP-based transistor fabrication
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US8384196B2 (en) 2008-09-19 2013-02-26 Taiwan Semiconductor Manufacturing Company, Ltd. Formation of devices by epitaxial layer overgrowth
US8502263B2 (en) 2006-10-19 2013-08-06 Taiwan Semiconductor Manufacturing Company, Ltd. Light-emitter-based devices with lattice-mismatched semiconductor structures
US8624103B2 (en) 2007-04-09 2014-01-07 Taiwan Semiconductor Manufacturing Company, Ltd. Nitride-based multi-junction solar cell modules and methods for making the same
US8629446B2 (en) 2009-04-02 2014-01-14 Taiwan Semiconductor Manufacturing Company, Ltd. Devices formed from a non-polar plane of a crystalline material and method of making the same
US8822248B2 (en) 2008-06-03 2014-09-02 Taiwan Semiconductor Manufacturing Company, Ltd. Epitaxial growth of crystalline material
US8847279B2 (en) 2006-09-07 2014-09-30 Taiwan Semiconductor Manufacturing Company, Ltd. Defect reduction using aspect ratio trapping
US8878243B2 (en) 2006-03-24 2014-11-04 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures and related methods for device fabrication
US8981427B2 (en) 2008-07-15 2015-03-17 Taiwan Semiconductor Manufacturing Company, Ltd. Polishing of small composite semiconductor materials
US9508890B2 (en) 2007-04-09 2016-11-29 Taiwan Semiconductor Manufacturing Company, Ltd. Photovoltaics on silicon
US9859381B2 (en) 2005-05-17 2018-01-02 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
US9984872B2 (en) 2008-09-19 2018-05-29 Taiwan Semiconductor Manufacturing Company, Ltd. Fabrication and structures of crystalline material
CN110289323A (zh) * 2019-06-12 2019-09-27 信利半导体有限公司 一种太阳能电池及其制备方法

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JP2675754B2 (ja) * 1994-07-08 1997-11-12 株式会社日立製作所 太陽電池
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