WO2003100870A1 - Cellule photovoltaique double jonction a lumiere stereo - Google Patents

Cellule photovoltaique double jonction a lumiere stereo Download PDF

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Publication number
WO2003100870A1
WO2003100870A1 PCT/CN2003/000372 CN0300372W WO03100870A1 WO 2003100870 A1 WO2003100870 A1 WO 2003100870A1 CN 0300372 W CN0300372 W CN 0300372W WO 03100870 A1 WO03100870 A1 WO 03100870A1
Authority
WO
WIPO (PCT)
Prior art keywords
junction
substrate
light double
stereo
sided
Prior art date
Application number
PCT/CN2003/000372
Other languages
English (en)
French (fr)
Inventor
Yinghua Li
Original Assignee
Yinghua Li
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yinghua Li filed Critical Yinghua Li
Priority to AU2003242125A priority Critical patent/AU2003242125A1/en
Publication of WO2003100870A1 publication Critical patent/WO2003100870A1/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0687—Multiple junction or tandem solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

Definitions

  • the utility model relates to a technology for converting solar energy into electric energy through a photovoltaic cell, and more specifically, a three-dimensional light double-sided junction photovoltaic.
  • Figure 1 is a schematic diagram of the structure of an existing photovoltaic cell. As shown in Figure 1, it is mainly composed of a substrate 1 and a P ⁇ ⁇ junction 2 on the front of the substrate 1. On the back of the sheet 1 and on the P ⁇ -N junction are silver-plated lead-out electrodes 3.
  • This structure can only use the direct light source from the front side of the P ⁇ __ N junction 2 on the front side of the substrate 1, and cannot use the scattered light on the reverse side and the scattered light reflected on the back side in any way. Therefore, the photoelectric conversion efficiency is low, only 15% -24%, which is expensive and not conducive to universal use. Improving the efficiency of photoelectric conversion and reducing the cost of peak tiles have become common issues that have been addressed at home and abroad.
  • the purpose of the utility model is to overcome the shortcomings in the prior art, and provide a three-dimensional light double-sided junction cell capable of utilizing multi-faceted light to make the photoelectric conversion efficiency high and the cost low.
  • the two sides of the substrate of the photovoltaic cell of the utility model are respectively a P ⁇ _N junction and an N ⁇ junction, and the P "-N junction and the N-P junction are lead electrodes.
  • the lead-out electrode is a metal grid or made of a transparent conductive material.
  • the substrate is single crystal silicon, crystalline silicon, amorphous silicon, or a thin film.
  • the utility model can be applied to all application fields for converting solar energy into electric energy through photovoltaic cells.
  • the utility model has the following advantages:
  • the page can also fully replace the page through the reverse P ⁇ N junction or N- :-P junction (Article 26)
  • the reverse P ⁇ N junction or N- :-P junction (Article 26)
  • FIG. 1 is a schematic structural diagram of an existing photovoltaic cell
  • FIG. 2 is a schematic structural diagram of a three-dimensional light double-sided junction photovoltaic cell according to the present invention.
  • FIG. 1 it is mainly composed of a substrate 1 and a P ⁇ N junction 2 on the front surface of the substrate 1. On the back of the substrate 1 and the P ⁇ N junction are silver-plated lead-out electrodes 3.
  • N-P junction 4 is a metal grid or an extraction electrode made of a transparent conductive material. 5.
  • the product of the utility model can be produced by using the existing production lines of various photovoltaic cells, and only needs to add a process of forming a Mi junction or an N-P junction at the link forming the junction of the original production process, and add a P-N junction or N_P junction and plated with anti-oxidation layer. Use silver-plated electrodes on the bottom surface or use transparent conductive materials instead.

Description

立体^ R面结光电池
技术领域
本实用新型涉及通过光伏电池将太阳能转换为电能技术， 更具体地说是 立体光双面结光电 。
背景技术
目前， 国内外生产的各类光电池都是单面结构， 图 1是现有光电池结构 示意图， 如图 1所示， 主要由基片 1， 在基片 1正面的 Ρ→ί结 2构成， 基 片 1背面和 Ρ^-Ν结上面是镀银引出电极 3。 这种结构只能通过基片 1正面 的 Ρ^__Ν结 2利用正面直射光源，不能利用反面的散射光和任何方面 反射到 背面的散射光。 因此， 光电转换效率低， 只有 15%— 24%， 成本昂贵， 不利 于普及使用。 提高光电转换效率和降低峰瓦成本就成为国内外着重攻关解决 的共同课题。
实用新型内容
本实用新型的目的是克服现有技术中的不足， 提供一种能利用多面光， 使光电转换效率高， 成本低的立体光双面结光电池。
本实用新型的光电池的基片两面分别是 Ρ^_Ν结、 Ν→结， Ρ" - Ν结、 Ν— Ρ结上面是引出电极
所述引出电极是金属网栅或由透明导电材料制成。
所述基片是单晶硅、 结晶硅、 非晶硅、 或薄膜。
本实用新型可运用于把太阳能通过光伏电池转换为电能的所有运用领 域。
本实用新型与现有技术相比具有如下优点： 除了可以通过正面的 结或 Ν— Ρ结利用正面直射光源，还可以通过反面的 Ρ~Ν结或 Ν—: Ρ结充分 替换页（细则第 26条) 利用常规电池背面的散射光和反射光， 相对单面光而言， 是利用立体光， 大 大地提高了光电池转换效率和降低了成本。
附图说明
图 1是现有光电池结构示意图；
图 2是本实用新型的立体光双面结光电池结构示意图。
具体实施方式
如图 1所示， 主要由基片 1， 在基片 1正面的 P~N结 2构成， 基片 1 背面和 P~ N结上面是镀银引出电极 3。
如图 2所示， 基片 1两面分别是 P~ N结 2、 N— P结 4， ： — N结 2、 N 一 P结 4上面是金属网栅或由透明导电材料制成的引出电极 5。 本实用新型 产品可利用各类光电池已有的生产线进行生产， 只需要在原生产工艺形成结 的环节加上一道形成 Mi结或 N— P结的工艺，在原产品的背面增加一个 P 一 N结或 N_P结，并镀上防氧化层。底面用镀银电极或改用透明导电材料。
2
替换页（细则第 26条)

Claims

权 利 要 求 书
1、 一种立体光双面结光电池， 由基片、 P~N结、 N— P结、 引出电极构成， 其特征在于基片两面分别是 P"— N结、 N— P结， P~N结、 N— P结上面是引出电极。
2、根据权利要求 1所述的立体光双面结电池，其特征在于所述引出电极 是金属网栅或由透明导电材料制成。
3、 根据权利要求 1所述的立体光双面结电池， 其特征在于所 述基片是单晶硅、 结晶硅、 非晶硅、 或薄膜。
3
替换页（细则第 26条)
PCT/CN2003/000372 2002-05-27 2003-05-21 Cellule photovoltaique double jonction a lumiere stereo WO2003100870A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2003242125A AU2003242125A1 (en) 2002-05-27 2003-05-21 Stereo-light double-junction photovolatic cell

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN 02227797 CN2550906Y (zh) 2002-05-27 2002-05-27 立体光双面结光电池
CN02227797.8 2002-05-27

Publications (1)

Publication Number Publication Date
WO2003100870A1 true WO2003100870A1 (fr) 2003-12-04

Family

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PCT/CN2003/000372 WO2003100870A1 (fr) 2002-05-27 2003-05-21 Cellule photovoltaique double jonction a lumiere stereo

Country Status (3)

Country Link
CN (1) CN2550906Y (zh)
AU (1) AU2003242125A1 (zh)
WO (1) WO2003100870A1 (zh)

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US9153645B2 (en) 2005-05-17 2015-10-06 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
WO2007112066A2 (en) 2006-03-24 2007-10-04 Amberwave Systems Corporation Lattice-mismatched semiconductor structures and related methods for device fabrication
US8173551B2 (en) 2006-09-07 2012-05-08 Taiwan Semiconductor Manufacturing Co., Ltd. Defect reduction using aspect ratio trapping
WO2008039534A2 (en) 2006-09-27 2008-04-03 Amberwave Systems Corporation Quantum tunneling devices and circuits with lattice- mismatched semiconductor structures
US20080187018A1 (en) 2006-10-19 2008-08-07 Amberwave Systems Corporation Distributed feedback lasers formed via aspect ratio trapping
US7825328B2 (en) 2007-04-09 2010-11-02 Taiwan Semiconductor Manufacturing Company, Ltd. Nitride-based multi-junction solar cell modules and methods for making the same
WO2008124154A2 (en) 2007-04-09 2008-10-16 Amberwave Systems Corporation Photovoltaics on silicon
US8304805B2 (en) 2009-01-09 2012-11-06 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor diodes fabricated by aspect ratio trapping with coalesced films
US8237151B2 (en) 2009-01-09 2012-08-07 Taiwan Semiconductor Manufacturing Company, Ltd. Diode-based devices and methods for making the same
CN101312220B (zh) * 2007-05-25 2010-06-09 财团法人工业技术研究院 双面可吸光发电的薄膜太阳电池
US8329541B2 (en) 2007-06-15 2012-12-11 Taiwan Semiconductor Manufacturing Company, Ltd. InP-based transistor fabrication
JP2010538495A (ja) 2007-09-07 2010-12-09 アンバーウェーブ・システムズ・コーポレーション 多接合太陽電池
US8183667B2 (en) 2008-06-03 2012-05-22 Taiwan Semiconductor Manufacturing Co., Ltd. Epitaxial growth of crystalline material
CN100578819C (zh) * 2008-06-05 2010-01-06 古捷玉 太阳能电池的光伏板及带有该光伏板的集光发电装置
US8274097B2 (en) 2008-07-01 2012-09-25 Taiwan Semiconductor Manufacturing Company, Ltd. Reduction of edge effects from aspect ratio trapping
US8981427B2 (en) 2008-07-15 2015-03-17 Taiwan Semiconductor Manufacturing Company, Ltd. Polishing of small composite semiconductor materials
KR101216541B1 (ko) 2008-09-19 2012-12-31 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 에피텍셜층 과성장에 의한 장치의 형성
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US8253211B2 (en) 2008-09-24 2012-08-28 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor sensor structures with reduced dislocation defect densities
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CN102157587B (zh) * 2011-04-29 2012-12-26 浙江吉利汽车研究院有限公司 一种太阳能电池板
CN110289323B (zh) * 2019-06-12 2021-04-30 信利半导体有限公司 一种太阳能电池及其制备方法

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Publication number Priority date Publication date Assignee Title
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Also Published As

Publication number Publication date
CN2550906Y (zh) 2003-05-14
AU2003242125A1 (en) 2003-12-12

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