JPWO2012105146A1 - 光電変換装置及び光電変換モジュール - Google Patents
光電変換装置及び光電変換モジュール Download PDFInfo
- Publication number
- JPWO2012105146A1 JPWO2012105146A1 JP2012555705A JP2012555705A JPWO2012105146A1 JP WO2012105146 A1 JPWO2012105146 A1 JP WO2012105146A1 JP 2012555705 A JP2012555705 A JP 2012555705A JP 2012555705 A JP2012555705 A JP 2012555705A JP WO2012105146 A1 JPWO2012105146 A1 JP WO2012105146A1
- Authority
- JP
- Japan
- Prior art keywords
- photoelectric conversion
- metal film
- electrode
- film
- conversion module
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 177
- 229910052751 metal Inorganic materials 0.000 claims abstract description 118
- 239000002184 metal Substances 0.000 claims abstract description 118
- 239000000853 adhesive Substances 0.000 claims description 53
- 230000001070 adhesive effect Effects 0.000 claims description 51
- 239000000463 material Substances 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 20
- 239000004065 semiconductor Substances 0.000 claims description 12
- 239000010408 film Substances 0.000 description 188
- 229910021417 amorphous silicon Inorganic materials 0.000 description 47
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 13
- 239000007769 metal material Substances 0.000 description 8
- 239000010409 thin film Substances 0.000 description 7
- 239000000969 carrier Substances 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 239000003566 sealing material Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0512—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module made of a particular material or composition of materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
また、本発明に係る光電変換モジュールによれば、改善された光電変換効率を有し、信頼性の高い光電変換モジュールを提供することができる。
以下の実施形態は、単なる例示である。本発明は、以下の実施形態に限定されない。また、実施形態において参照する図面は、模式的に記載されたものであり、図面に描画された物体の寸法比率などは、現実の物体の寸法比率などとは異なる場合がある。具体的な物体の寸法比率等は、以下の説明を参酌して判断されるべきである。
光電変換モジュール10は、複数の光電変換装置11と、各光電変換装置11を電気的に接続する配線材12とを備える。また、光電変換モジュール10は、光電変換装置11の受光面側を保護する第1保護部材13と、光電変換装置11の裏面側を保護する第2保護部材14とを備えることが好適である。そして、第1保護部材13と第2保護部材14との間には、封止材15が充填される。光電変換装置11と配線材12とは、接着剤16(後述の図6に参照)を用いて接続できる。
図2は、光電変換装置11を受光面側から見た図であり、図3は、光電変換装置11を裏面側から見た図である。図4は、図2及び図3のB‐B線に沿った断面図(テクスチャ構造は省略)を示す。
Claims (18)
- 受光面及び裏面にテクスチャ構造が形成された光電変換部と、
前記光電変換部の受光面に設けられた受光面電極と、
前記光電変換部の裏面に設けられた裏面電極と、
を備え、
前記裏面電極は、
前記光電変換部の裏面に積層された透明導電膜と、
前記透明導電膜上の略全面に積層され、前記テクスチャ構造を反映した表面凹凸を有する金属膜と、
前記金属膜上に形成され、該金属膜の表面凹凸高さ以上の厚みを有する突起電極と、
を含む光電変換装置。 - 請求項1に記載の光電変換装置であって、
前記突起電極は、受光面電極の厚みよりも薄く形成された光電変換装置。 - 請求項1又は2に記載の光電変換装置であって、
前記金属膜は、前記透明導電膜上の全面に積層された光電変換装置。 - 請求項1〜3のいずれか1に記載の光電変換装置であって、
前記金属膜の反射率は、少なくとも波長800nm〜1200nmの赤外領域の光について、前記透明導電膜の反射率よりも高い光電変換装置。 - 請求項1〜3のいずれか1に記載の光電変換装置であって、
前記金属膜は、少なくともAgを含む膜である光電変換装置。 - 請求項1〜5のいずれか1に記載の光電変換装置であって、
前記光電変換部は、
結晶系半導体基板と、
前記結晶系半導体基板の裏面に積層された非晶質半導体膜と、
を含み、
前記透明導電膜は、前記非晶質半導体膜の裏面に積層されている光電変換装置。 - 光電変換装置と、
前記光電変換装置に電気的に接続された配線材と、
を備え、
前記光電変換装置は、
光電変換部と、
前記光電変換部の受光面に設けられた受光面電極と、
前記光電変換部の裏面に積層された透明導電膜、前記透明導電膜上の略全面に積層された金属膜、及び前記金属膜上に形成された突起電極を有する裏面電極と、
を含み、
前記配線材は、
接着剤を介して前記突起電極に電気的に接続され、前記金属膜上の前記突起電極の周囲の少なくとも一部において前記接着剤により前記金属膜上に直接接着されている光電変換モジュール。 - 請求項7に記載の光電変換モジュールにおいて、
前記配線材は、その側面に前記接着剤が付着しており、該側面と前記金属膜とが前記接着剤により直接接着されている光電変換モジュール。 - 請求項7又は8に記載の光電変換モジュールであって、
前記金属膜は、前記透明導電膜上の全面に積層された光電変換モジュール。 - 請求項7〜9のいずれか1に記載の光電変換モジュールであって、
前記光電変換部の前記受光面及び前記裏面には、テクスチャ構造が形成されると共に、前記金属膜は、該テクスチャ構造を反映した表面凹凸を含むように薄く形成され、
前記突起電極の厚みは、前記金属膜の表面凹凸高さ以上受光面電極の厚み未満である光電変換モジュール。 - 請求項7〜10のいずれか1に記載の光電変換モジュールであって、
前記配線材は、少なくとも前記金属膜上の前記突起電極の幅方向片側において、前記接着剤により前記金属膜上に直接接着されている光電変換モジュール。 - 請求項11に記載の光電変換モジュールであって、
前記配線材は、前記金属膜上の前記突起電極の幅方向両側において、前記接着剤により前記金属膜上に直接接着されている光電変換モジュール。 - 請求項11又は12に記載の光電変換モジュールであって、
前記配線材は、前記突起電極よりも幅広であり、少なくとも該突起電極の幅方向片側から張り出した状態で互いに接続されている光電変換モジュール。 - 請求項7〜10のいずれか1に記載の光電変換モジュールであって、
前記配線材は、前記金属膜上の前記突起電極の全周囲に亘って、前記接着剤により前記金属膜上に直接接着されている光電変換モジュール。 - 請求項7〜10のいずれか1に記載の光電変換モジュールであって、
複数の前記突起電極が、互いに間隔をあけて列状に並んで配置され、
前記配線材は、隣り合う前記突起電極の間隙において、前記接着剤により前記金属膜上に直接接着されている光電変換モジュール。 - 請求項7〜15のいずれか1に記載の光電変換モジュールであって、
前記金属膜の反射率は、少なくとも波長800nm〜1200nmの赤外領域の光について、前記透明導電膜の反射率よりも高い光電変換モジュール。 - 請求項7〜16のいずれか1に記載の光電変換モジュールであって、
前記金属膜は、少なくともAgを含む膜である光電変換モジュール。 - 請求項7〜17のいずれか1に記載の光電変換モジュールであって、
前記光電変換部は、
結晶系半導体基板と、
前記結晶系半導体基板の裏面に積層された非晶質半導体膜と、
を含み、
前記透明導電膜は、前記非晶質半導体膜の裏面に積層されている光電変換モジュール。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011018381 | 2011-01-31 | ||
JP2011018381 | 2011-01-31 | ||
PCT/JP2011/080165 WO2012105146A1 (ja) | 2011-01-31 | 2011-12-27 | 光電変換装置及び光電変換モジュール |
Publications (1)
Publication Number | Publication Date |
---|---|
JPWO2012105146A1 true JPWO2012105146A1 (ja) | 2014-07-03 |
Family
ID=46602376
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012555705A Pending JPWO2012105146A1 (ja) | 2011-01-31 | 2011-12-27 | 光電変換装置及び光電変換モジュール |
Country Status (4)
Country | Link |
---|---|
US (1) | US20130312826A1 (ja) |
EP (1) | EP2657981A4 (ja) |
JP (1) | JPWO2012105146A1 (ja) |
WO (1) | WO2012105146A1 (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014132287A1 (ja) | 2013-02-27 | 2014-09-04 | 三洋電機株式会社 | 太陽電池モジュール及び太陽電池モジュールの製造方法 |
JP6410106B2 (ja) * | 2013-05-28 | 2018-10-24 | パナソニックIpマネジメント株式会社 | 太陽電池モジュール |
JP2015060847A (ja) | 2013-09-17 | 2015-03-30 | 三洋電機株式会社 | 太陽電池 |
KR20150045309A (ko) * | 2013-10-18 | 2015-04-28 | 엘지이노텍 주식회사 | 태양전지 모듈 |
JP6435340B2 (ja) * | 2014-09-30 | 2018-12-05 | 株式会社カネカ | 結晶シリコン系太陽電池の製造方法、及び太陽電池モジュールの製造方法 |
WO2016112029A1 (en) * | 2015-01-06 | 2016-07-14 | SunEdison Energy India Private Limited | Texturing ribbons for photovoltaic module production |
EP4300597A3 (en) * | 2015-10-08 | 2024-03-27 | Shangrao Xinyuan YueDong Technology Development Co. Ltd | Solar cell module |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08508368A (ja) * | 1993-10-11 | 1996-09-03 | ユニヴェルシテ ドゥ ヌーシャテル アンスティチュ ドゥ ミクロテクニク | 光電池および光電池を製造するための方法 |
JP2006278710A (ja) * | 2005-03-29 | 2006-10-12 | Kyocera Corp | 太陽電池モジュール及びその製造方法 |
JP2010238938A (ja) * | 2009-03-31 | 2010-10-21 | Sanyo Electric Co Ltd | 太陽電池セル、太陽電池モジュールおよび太陽電池システム |
WO2010125679A1 (ja) * | 2009-04-30 | 2010-11-04 | 三菱電機株式会社 | 太陽電池セル |
JP2011003750A (ja) * | 2009-06-19 | 2011-01-06 | Kaneka Corp | 結晶シリコン系太陽電池 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002141534A (ja) * | 2000-11-02 | 2002-05-17 | Sharp Corp | 半導体基板の電極及びその製造方法 |
JPWO2005109524A1 (ja) * | 2004-05-07 | 2008-03-21 | 三菱電機株式会社 | 太陽電池及びその製造方法 |
JP4463297B2 (ja) * | 2007-08-07 | 2010-05-19 | 三洋電機株式会社 | 太陽電池モジュール |
JP5515367B2 (ja) * | 2009-03-31 | 2014-06-11 | 三洋電機株式会社 | 太陽電池セル、太陽電池モジュールおよび太陽電池システム |
JP5031007B2 (ja) | 2009-09-07 | 2012-09-19 | 三洋電機株式会社 | 光起電力素子 |
-
2011
- 2011-12-27 EP EP20110857750 patent/EP2657981A4/en not_active Withdrawn
- 2011-12-27 WO PCT/JP2011/080165 patent/WO2012105146A1/ja active Application Filing
- 2011-12-27 JP JP2012555705A patent/JPWO2012105146A1/ja active Pending
-
2013
- 2013-07-30 US US13/954,549 patent/US20130312826A1/en not_active Abandoned
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08508368A (ja) * | 1993-10-11 | 1996-09-03 | ユニヴェルシテ ドゥ ヌーシャテル アンスティチュ ドゥ ミクロテクニク | 光電池および光電池を製造するための方法 |
JP2006278710A (ja) * | 2005-03-29 | 2006-10-12 | Kyocera Corp | 太陽電池モジュール及びその製造方法 |
JP2010238938A (ja) * | 2009-03-31 | 2010-10-21 | Sanyo Electric Co Ltd | 太陽電池セル、太陽電池モジュールおよび太陽電池システム |
WO2010125679A1 (ja) * | 2009-04-30 | 2010-11-04 | 三菱電機株式会社 | 太陽電池セル |
JP2011003750A (ja) * | 2009-06-19 | 2011-01-06 | Kaneka Corp | 結晶シリコン系太陽電池 |
Also Published As
Publication number | Publication date |
---|---|
WO2012105146A1 (ja) | 2012-08-09 |
US20130312826A1 (en) | 2013-11-28 |
EP2657981A1 (en) | 2013-10-30 |
EP2657981A4 (en) | 2014-02-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5687506B2 (ja) | 太陽電池及び太陽電池モジュール | |
WO2012105146A1 (ja) | 光電変換装置及び光電変換モジュール | |
JP6434481B2 (ja) | 光電変換モジュール | |
JP5874011B2 (ja) | 太陽電池及び太陽電池モジュール | |
WO2012105155A1 (ja) | 光電変換装置及びその製造方法 | |
WO2019146366A1 (ja) | 太陽電池モジュール | |
WO2010021204A1 (ja) | 太陽電池モジュール、太陽電池及び太陽電池モジュールの製造方法 | |
US10014426B2 (en) | Solar cell and solar cell module | |
JP6677801B2 (ja) | 結晶シリコン系太陽電池およびその製造方法、ならびに太陽電池モジュール | |
JP5554409B2 (ja) | 光電変換装置 | |
WO2013001861A1 (ja) | 太陽電池及びその製造方法 | |
JP7270631B2 (ja) | 太陽電池モジュール | |
JP7353272B2 (ja) | 太陽電池デバイスおよび太陽電池デバイスの製造方法 | |
WO2013014972A1 (ja) | 光起電力モジュール | |
JP2016086154A (ja) | 太陽電池モジュール | |
WO2012105153A1 (ja) | 光電変換素子 | |
JP7270607B2 (ja) | 太陽電池セルの製造方法、太陽電池モジュールの製造方法、および、太陽電池モジュール | |
WO2015045263A1 (ja) | 太陽電池及び太陽電池モジュール | |
WO2019008955A1 (ja) | 太陽電池および太陽電池モジュール | |
JPH11298020A (ja) | 薄膜太陽電池モジュール | |
JP2018198236A (ja) | 太陽電池モジュール | |
WO2013046338A1 (ja) | 太陽電池及び太陽電池モジュール |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20140805 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20150224 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20150901 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20151016 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20160308 |