KR970060539A - 후면 함몰전극형 태양전지의 제조방법 - Google Patents

후면 함몰전극형 태양전지의 제조방법 Download PDF

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KR970060539A
KR970060539A KR1019960000305A KR19960000305A KR970060539A KR 970060539 A KR970060539 A KR 970060539A KR 1019960000305 A KR1019960000305 A KR 1019960000305A KR 19960000305 A KR19960000305 A KR 19960000305A KR 970060539 A KR970060539 A KR 970060539A
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South Korea
Prior art keywords
forming
semiconductor substrate
groove
solar cell
layer
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KR1019960000305A
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English (en)
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KR100370410B1 (ko
Inventor
김동섭
지일환
이수홍
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김광호
삼성전자 주식회사
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Publication of KR970060539A publication Critical patent/KR970060539A/ko
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Publication of KR100370410B1 publication Critical patent/KR100370410B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

본 발명은 p형 반도체 기판의 전면에 피라미드 구조를 형성한 다음, 이미터를 확산하여 pn접합을 형성하는 단계; 반도체 기판의 전면과 후면에 산화막을 형성하는 단계; 반도체 기판 후면에 양그홈을 형성하는 단계; 상기 양극홈에 p+층을 형성하는 단계; 반도체 기판 후면에 음극홈을 형성하는 단계; 상기 음극홈에 n+층을 형성하는단계; 상기 반도체 기판 후면에 형성되어 있는 양극홈 및 음극홈에 전도성 금속을 도금하여 전극을 형성하는 단계를 포함하는 것을 특징으로 하는 후면 함몰전극형 태양전지의 제조방법을 제공한다. 본 발명의 제조방법은 사진식각공정과 같은 복잡한 공정이 불필요하고, 제조공정이 비교적 간단하면서 생산성이 높은 방법이다. 이 방법에 따라 제조된 태양전지는 캐리아의 수집효울이 증대되며, 효과적인 후면전계가 형성된다.

Description

후면 함목전극형 태양전지의 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2a도는 본 발명의 후면 함목 전극형 태양전지를 나타내고, 제2b도는 본 발명의 후면 함몰전극형 태양전지에서 후면전극의 모양을 나타낸 도면이다.

Claims (4)

  1. p형 반도체 기판의 전면에 피라미드 구조를 형성한 다음, 이미터를 확산하여 pn접합을 형성하는 단계; 반도체 기판의 전면과 후면에 산화막을 형성하는 단계; 반도체 기판 후면에 양극홈을 형성하는 단계; 상기 양극홈에 p+층을 형성하는 단계; 반도체 기판 후면에 음극홈을 형성하는 단계; 상기 음극홈에 n+층을 형성하는 단계; 상기 반도체 기판 후면에 형성되어 있는 양극홈 및 음극홈에 전도성 금속을 도금하여 전극을 형성하는 단계를 포함하는 것을 특징으로 하는 후면 함몰전극형 태양전지의 제조방법.
  2. 제1항에 있어서, 상기 반도체 기판과 후면에 산화막을 형성하기 이전에, 반도체 기판 전면에 n+층을 형성하는 단계를 더 포함하는 것을 특징으로 하는 후면 함몰전극 태양전지의 제조 방법.
  3. 제1항에 있어서, 상기 전극을 형성하는 단계에서 전도성 금속이 나켈, 아연 구리, 은 티타늄 및 팔라듐으로 이루어진 군으로부터 선택된 적어도 하나인 것을 특징으로 하는 후면 함몰전극 태양전지의 제조 방법.
  4. 제1항에 있어서, 상기 홈의 깊이가 5~100㎛, 폭이 5~40㎛인 것을 특징으로 하는 후면 함몰전극형 태양 전지의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960000305A 1996-01-09 1996-01-09 후면 함몰전극형 태양전지의 제조방법 KR100370410B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019960000305A KR100370410B1 (ko) 1996-01-09 1996-01-09 후면 함몰전극형 태양전지의 제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960000305A KR100370410B1 (ko) 1996-01-09 1996-01-09 후면 함몰전극형 태양전지의 제조방법

Publications (2)

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KR970060539A true KR970060539A (ko) 1997-08-12
KR100370410B1 KR100370410B1 (ko) 2003-03-28

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009002463A2 (en) * 2007-06-23 2008-12-31 Sunpower Corporation Back-contact solar cell for high power-over-weight applications

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101597532B1 (ko) * 2009-09-23 2016-02-25 엘지전자 주식회사 후면전극형 태양전지의 제조방법
KR101661358B1 (ko) * 2010-01-05 2016-09-29 엘지전자 주식회사 태양 전지 및 그 제조 방법
KR101276888B1 (ko) 2010-08-25 2013-06-19 엘지전자 주식회사 태양 전지
KR101940074B1 (ko) * 2012-04-30 2019-04-10 주성엔지니어링(주) 태양 전지 및 그 제조 방법

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009002463A2 (en) * 2007-06-23 2008-12-31 Sunpower Corporation Back-contact solar cell for high power-over-weight applications
WO2009002463A3 (en) * 2007-06-23 2009-03-19 Sunpower Corp Back-contact solar cell for high power-over-weight applications

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KR100370410B1 (ko) 2003-03-28

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