JP7168809B1 - 太陽電池およびその製造方法、光起電力モジュール - Google Patents
太陽電池およびその製造方法、光起電力モジュール Download PDFInfo
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- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 2
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
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Abstract
Description
Claims (14)
- ベースと、
前記ベースの第1面に位置し、前記ベースから離れる方向に順に設けられたトンネル酸化層、ドープ導電層および第1パッシベーション層と、
前記第1パッシベーション層を貫通して前記ドープ導電層に電気的に接続された第1金属電極、および、前記トンネル酸化層を貫通して前記ベースに接触し、かつ前記第1金属電極の幅より小さい幅を有し、前記第1金属電極の前記ベースを向く表面に接続される第2金属電極と、
前記ベース内に位置し、前記ベース内に位置する前記第2金属電極を被覆する局所ドーピングエリアであって、前記ベースと同じ導電型のドーパントを有し、かつドーピング濃度が前記ベースのドーピング濃度よりも大きい局所ドーピングエリアと、
を備えることを特徴とする太陽電池。 - 前記第2金属電極と前記第1金属電極との接触面積の、前記第1金属電極の断面積に対する比が、1:16~2:3である、
ことを特徴とする請求項1に記載の太陽電池。 - 前記第2金属電極は、間隔を置いて配列された複数のサブ電極を含み、かつ、前記トンネル酸化層が前記ベースに向かう方向に沿って、前記サブ電極の幅が徐々に小さくなつている、
ことを特徴とする請求項1に記載の太陽電池。 - 前記トンネル酸化層が前記ベースに向かう方向に沿った方向において、前記ベース内にある前記第2金属電極の長さと前記第2金属電極の長さとの比が、1:10~9:10である、
ことを特徴とする請求項1に記載の太陽電池。 - 前記ベースのドーピング濃度に対する前記局所ドーピングエリアのドーピング濃度の比が、10000:1~200000:1である、
ことを特徴とする請求項1に記載の太陽電池。 - 前記局所ドーピングエリアのドーピング濃度は、1×1020atoms/cm3~2×1021atoms/cm3である、
ことを特徴とする請求項5に記載の太陽電池。 - 前記ベースは、前記トンネル酸化層が前記ベースに向かう方向に沿って並べられる第1エリアと第2エリアを有し、前記第1エリアと前記第2エリアとの境界線が前記局所ドーピングエリアの前記第2金属電極から離間している上面と面一となり、そのうち、前記第1エリアのドーピング濃度が前記第2エリアのドーピング濃度よりも大きく、かつ、前記局所ドーピングエリアのドーピング濃度が前記第1エリアのドーピング濃度よりも大きい、
ことを特徴とする請求項1に記載の太陽電池。 - 前記第2金属電極は、前記第1金属電極と間接的に接続する、
ことを特徴とする請求項1に記載の太陽電池。 - 請求項1~8のいずれか1項に記載の太陽電池を複数接続してなるセルストリングと、
前記セルストリングの表面を覆う封止層と、
前記封止層の前記セルストリングから離れた面を覆うカバープレートと、を備える、
ことを特徴とする光起電力モジュール。 - ベースを提供することと、
前記ベースの第1面にかつ前記ベースから離れる方向に、トンネル酸化層、ドープ導電層、および第1パッシベーション層を順に形成することと、
前記第1パッシベーション層を貫通して前記ドープ導電層に電気的に接続された第1金属電極、および、前記トンネル酸化層を貫通して前記ベースに接触し、かつ前記第1金属電極の幅より小さい幅を有し、前記第1金属電極の前記ベースを向く表面に接続される第2金属電極を形成することと、
前記ベース内には、前記ベース内に位置する前記第2金属電極を被覆する局所ドーピングエリアであって、前記ベースと同じ導電型のドーパントを有し、かつドーピング濃度が前記ベースのドーピング濃度よりも大きい局所ドーピングエリアが形成されることと、を含む、
ことを特徴とする太陽電池の製造方法。 - 前記第1金属電極および第2金属電極を形成する方法には、
前記ベースの前記第1パッシベーション層の一部にレーザ加工を施すことにより、レーザ処理領域を形成し、前記レーザ処理領域が前記第2金属電極形成待ち領域に対応し、前記第1パッシベーション層において、前記レーザ処理領域以外の領域が、前記第1金属電極形成待ち領域を含む平坦エリアとなり、前記レーザ処理領域が前記第1金属電極形成待ち領域に位置されることと、
前記第1面のレーザ処理領域及び前記第1金属電極形成待ち領域に、前記ベースのドーピングイオンと同じ種である第1ドーピングイオンを含む導電性ペーストを印刷することと、
前記導電性ペーストに対して焼結処理を行い、前記第2金属電極及び前記第1金属電極を形成することと、が含まれる、
ことを特徴とする請求項10に記載の太陽電池の製造方法。 - 前記ベースの第1パッシベーション層の一部にレーザ加工を施すことによりレーザ処理領域を形成する方法には、レーザ加工により、前記のレーザ処理領域を形成する第1パッシベーション層を、前記ドープ導電層の表面の一部が露出するまでレーザエッチングして、前記レーザ処理領域を形成することが含まれる、
ことを特徴とする請求項11に記載の太陽電池の製造方法。 - 前記ベースの第1パッシベーション層の一部にレーザ加工を施すことによりレーザ処理領域を形成する方法には、レーザ加工により、前記のレーザ処理領域を形成する第1パッシベーション層に対してレーザエッチングを行うことが含まれ、前記形成待ちレーザ処理領域は、第1形成待ちレーザ処理領域と第2形成待ちレーザ処理領域を含み、そのうち、前記ドープ導電層の表面の一部が露出するように、前記第1形成待ちレーザ処理領域をレーザエッチングし、予め設定された厚さを有する第2パッシベーション層を形成するように、第2形成待ちレーザ処理領域をレーザエッチングする、
ことを特徴とする請求項11に記載の太陽電池の製造方法。 - 前記第1パッシベーション層の厚さに対する前記第2パッシベーション層の厚さの比は、1:10~2:3である、
ことを特徴とする請求項13に記載の太陽電池の製造方法。
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