JP7073566B1 - 太陽電池及び光起電力モジュール - Google Patents
太陽電池及び光起電力モジュール Download PDFInfo
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- JP7073566B1 JP7073566B1 JP2021152725A JP2021152725A JP7073566B1 JP 7073566 B1 JP7073566 B1 JP 7073566B1 JP 2021152725 A JP2021152725 A JP 2021152725A JP 2021152725 A JP2021152725 A JP 2021152725A JP 7073566 B1 JP7073566 B1 JP 7073566B1
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- dielectric layer
- oxygen
- rich dielectric
- silicon
- layer
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- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 238
- 239000001301 oxygen Substances 0.000 claims abstract description 238
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- 229910052710 silicon Inorganic materials 0.000 claims abstract description 185
- 239000010703 silicon Substances 0.000 claims abstract description 180
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- 229910052814 silicon oxide Inorganic materials 0.000 claims description 29
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 27
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- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
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- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
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Abstract
Description
調合された混酸でベース領域101の裏面10bのホウ珪酸ガラスを除去し、混酸には、質量分率が0.1%~10%のフッ化水素酸溶液、質量分率が10%~20%の硫酸溶液、及び質量分率が25%~50%の硝酸溶液が含まれ、酸洗浄の時間は10s~180sである、酸洗浄の温度は7°C~20°Cであるステップ、
酸洗浄後の裏面10bに対して水洗、乾燥処理を行うステップ。
なお、酸洗浄後の基板10の裏面10bには、多孔質構造が現れる。
まず、アルカリ研磨後の基板10を堆積装置に置き、酸素源(例えば、酸素、亜酸化窒素、オゾンであってもよい)を20L~60L導入し、昇温速度0.5°C/min~3°C/minに従って堆積装置内の温度を560°C~620°Cに加熱し、堆積時間を3min~10minとし、トンネル酸化層121を形成し、酸素導入の終了後、恒温段階に入り、その後、適量のシランガスを導入し、多結晶シリコン層を形成し、最後に、多結晶シリコン層をIn-situドープし、ドープ導電層122を形成する。
Claims (18)
- 対向する第1表面及び第2表面を有する基板と、
前記第1表面に設けられた第1パッシベーション積層体と、
前記第2表面に設けられたトンネル酸化層と、
前記トンネル酸化層の表面に設けられたドープ導電層と、
前記ドープ導電層の表面に設けられた第2パッシベーション層とを備え、
前記基板は、シリコン基板材料であり、
前記第1パッシベーション積層体は、前記第1表面から離れる方向に順次設置される第
1酸素リッチ誘電体層、第1ケイ素リッチ誘電体層、第2酸素リッチ誘電体層及び第2ケ
イ素リッチ誘電体層を含み、前記第1酸素リッチ誘電体層における酸素原子分率は、40%~70%であり、前記第1ケイ素リッチ誘電体層における酸素原子分率は0%を超えかつ10%以下であり、前記第2酸素リッチ誘電体層における酸素原子分率は50%~80%であり、前記第2ケイ素リッチ誘電体層における酸素原子分率は0%を超えかつ10%以下であり、且つ、前記第1酸素リッチ誘電体層における酸素原子分率は、前記第2酸素リッチ誘電体層における酸素原子分率よりも小さい、
ことを特徴とする太陽電池。 - 前記第1酸素リッチ誘電体層における酸素原子分率は、40%~60%であり、前記第
1ケイ素リッチ誘電体層における酸素原子分率は、0%を超えかつ7%以下であり、前記第2ケイ素リッチ誘電体層における酸素原子分率は、0%を超えかつ7%以下である、
ことを特徴とする請求項1に記載の太陽電池。 - 前記第1酸素リッチ誘電体層の材料は、酸化アルミニウム、酸化ケイ素、酸窒化ケイ素、酸化ガリウム、酸化チタン、又は酸化ハフニウムのうちの1つ又は複数の組み合わせを含む、
ことを特徴とする請求項1に記載の太陽電池。 - 前記第1酸素リッチ誘電体層は酸化アルミニウム層と酸窒化ケイ素層とを含み、前記酸化アルミニウム層は、前記酸窒化ケイ素層と前記基板との間に位置する、
ことを特徴とする請求項3に記載の太陽電池。 - 前記酸化アルミニウムにおける酸素原子数とアルミニウム原子数の比は、[0.6~2.4]である、
ことを特徴とする請求項3に記載の太陽電池。 - 前記第1酸素リッチ誘電体層の屈折率は、前記第2酸素リッチ誘電体層の屈折率よりも大きい、
ことを特徴とする請求項1に記載の太陽電池。 - 前記第1酸素リッチ誘電体層は、酸化ケイ素材料を含み、前記第1酸素リッチ誘電体層の屈折率は1.58~1.61であり、前記第1表面に垂直な方向において、前記第1酸素リッチ誘電体層の厚さは2nm~15nmである、
ことを特徴とする請求項1又は6に記載の太陽電池。 - 前記第1酸素リッチ誘電体層は、酸窒化ケイ素材料を含み、前記第1酸素リッチ誘電体層の屈折率は、1.61~1.71であり、前記第1表面に垂直な方向において、前記第1酸素リッチ誘電体層の厚さは、8nm~20nmである、
ことを特徴とする請求項1又は6に記載の太陽電池。 - 前記第1酸素リッチ誘電体層は、酸化アルミニウム材料を含み、前記第1酸素リッチ誘電体層の屈折率は、1.71~1.81であり、前記第1表面に垂直な方向において、前記第1酸素リッチ誘電体層の厚さは、1nm~20nmである、
ことを特徴とする請求項1又は6に記載の太陽電池。 - 前記第2酸素リッチ誘電体層は、酸窒化ケイ素材料を含み、前記第2酸素リッチ誘電体層の屈折率は、1.56~1.62であり、前記第1表面に垂直な方向において、前記第2酸素リッチ誘電体層の厚さは、5nm~20nmである、
ことを特徴とする請求項1又は6に記載の太陽電池。 - 前記第1ケイ素リッチ誘電体層の屈折率は、前記第2ケイ素リッチ誘電体層の屈折率よりも大きい、
ことを特徴とする請求項1に記載の太陽電池。 - 前記第1ケイ素リッチ誘電体層の屈折率は、2.02~2.2であり、前記第2ケイ素リッチ誘電体層の屈折率は、1.98~2.06である、
ことを特徴とする請求項11に記載の太陽電池。 - 前記第1ケイ素リッチ誘電体層の材料は、第1窒化ケイ素材料を含み、前記第1窒化ケイ素材料におけるケイ素原子数と窒素原子数との比は、0.66~2.3である、
ことを特徴とする請求項1又は11に記載の太陽電池。 - 前記第1ケイ素リッチ誘電体層の屈折率は、2.02~2.2であり、前記第1表面に垂直な方向において、前記第1ケイ素リッチ誘電体層の厚さは、20nm~50nmである、
ことを特徴とする請求項13に記載の太陽電池。 - 前記第2ケイ素リッチ誘電体層の材料は、第2窒化ケイ素材料を含み、前記第2窒化ケイ素材料におけるケイ素原子数と窒素原子数との比は、0.46~1.87である、
ことを特徴とする請求項1又は11に記載の太陽電池。 - 前記第2ケイ素リッチ誘電体層の屈折率は、1.98~2.06であり、前記第1表面に垂直な方向において、前記第2ケイ素リッチ誘電体層の厚さは、20nm~50nmである、
ことを特徴とする請求項15に記載の太陽電池。 - 前記第2パッシベーション層の屈折率は、2.04~2.2であり、前記第2表面に垂直な方向において、前記第2パッシベーション層の厚さは、60nm~100nmである、
ことを特徴とする請求項1に記載の太陽電池。 - 複数の請求項1乃至17のいずれか一項に記載の太陽電池を接続することで形成された電池ストリングと、
前記電池ストリングの表面を被覆するための封止用接着フィルムと、
前記封止用接着フィルムの前記電池ストリングから離れた表面を覆うためのカバープレートとを備える、
ことを特徴とする光起電力モジュール。
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JP7248856B1 (ja) | 2022-08-05 | 2023-03-29 | ジョジアン ジンコ ソーラー カンパニー リミテッド | 太陽電池および太陽電池の製造方法、光起電力モジュール |
JP2024022416A (ja) * | 2022-08-05 | 2024-02-16 | ジョジアン ジンコ ソーラー カンパニー リミテッド | 太陽電池および太陽電池の製造方法、光起電力モジュール |
US11973152B2 (en) | 2022-08-05 | 2024-04-30 | Zhejiang Jinko Solar Co., Ltd. | Solar cell and photovoltaic module |
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JP2023029209A (ja) | 2023-03-03 |
US20230058215A1 (en) | 2023-02-23 |
EP4138147C0 (en) | 2023-07-26 |
AU2022204453A1 (en) | 2022-07-14 |
EP4220737A1 (en) | 2023-08-02 |
AU2021232800B1 (en) | 2022-05-26 |
CN115472701A (zh) | 2022-12-13 |
PL4138147T3 (pl) | 2024-04-08 |
US20230253514A1 (en) | 2023-08-10 |
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AU2022204453B2 (en) | 2023-11-09 |
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US11664467B2 (en) | 2023-05-30 |
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