PL4138147T3 - Ogniwo słoneczne i moduł fotowoltaiczny - Google Patents
Ogniwo słoneczne i moduł fotowoltaicznyInfo
- Publication number
- PL4138147T3 PL4138147T3 PL21197431.6T PL21197431T PL4138147T3 PL 4138147 T3 PL4138147 T3 PL 4138147T3 PL 21197431 T PL21197431 T PL 21197431T PL 4138147 T3 PL4138147 T3 PL 4138147T3
- Authority
- PL
- Poland
- Prior art keywords
- solar cell
- photovoltaic module
- photovoltaic
- module
- solar
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
- H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
- H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
- H10F10/166—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
- H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
- H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
- H10F19/80—Encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
- H10F19/90—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers
- H10F19/902—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
- H10F77/315—Coatings for devices having potential barriers for photovoltaic cells the coatings being antireflective or having enhancing optical properties
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/70—Surface textures, e.g. pyramid structures
- H10F77/707—Surface textures, e.g. pyramid structures of the substrates or of layers on substrates, e.g. textured ITO layer on a glass substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110963291.4A CN115472701B (zh) | 2021-08-20 | 2021-08-20 | 太阳能电池及光伏组件 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| PL4138147T3 true PL4138147T3 (pl) | 2024-04-08 |
Family
ID=77821657
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PL21197431.6T PL4138147T3 (pl) | 2021-08-20 | 2021-09-17 | Ogniwo słoneczne i moduł fotowoltaiczny |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US11664467B2 (pl) |
| EP (3) | EP4220737B1 (pl) |
| JP (2) | JP7073566B1 (pl) |
| CN (2) | CN115472701B (pl) |
| AU (2) | AU2021232800B1 (pl) |
| PL (1) | PL4138147T3 (pl) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116072739B (zh) | 2022-08-05 | 2023-10-27 | 浙江晶科能源有限公司 | 太阳能电池及太阳能电池的制备方法、光伏组件 |
| EP4318607B1 (en) | 2022-08-05 | 2024-12-04 | Zhejiang Jinko Solar Co., Ltd. | Solar cell and photovoltaic module |
| DE102022130052A1 (de) * | 2022-11-14 | 2024-05-16 | Institut Für Solarenergieforschung Gmbh | Solarzelle mit einer eine Siliziumkarbidschicht umfassenden Frontkontaktstruktur und Verfahren zu deren Herstellung |
| CN116721913A (zh) * | 2022-11-24 | 2023-09-08 | 浙江晶科能源有限公司 | 太阳能电池的制备方法及太阳能电池 |
| CN116314358A (zh) * | 2023-03-14 | 2023-06-23 | 新疆中部合盛硅业有限公司 | 一种TOPCon电池及制备方法 |
| CN117153899A (zh) * | 2023-09-22 | 2023-12-01 | 晶科能源(海宁)有限公司 | 太阳能电池及光伏组件 |
| CN119486551B (zh) * | 2024-10-30 | 2026-01-06 | 武汉大学 | 一种反式钙钛矿太阳能电池及其制备方法 |
| CN120322061A (zh) * | 2024-12-30 | 2025-07-15 | 嘉兴隆基光伏科技有限公司 | 一种太阳能电池 |
| CN120344029B (zh) * | 2025-06-20 | 2025-09-09 | 天合光能股份有限公司 | TOPCon太阳能电池及其制备方法、光伏组件 |
Family Cites Families (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040075908A1 (en) * | 2002-10-16 | 2004-04-22 | Chen Fei Chuang | Multilayer mirror |
| JP4118187B2 (ja) * | 2003-05-09 | 2008-07-16 | 信越半導体株式会社 | 太陽電池の製造方法 |
| WO2008065918A1 (fr) | 2006-12-01 | 2008-06-05 | Sharp Kabushiki Kaisha | Cellule solaire et son procédé de fabrication |
| US20110194181A1 (en) * | 2008-10-17 | 2011-08-11 | Ulvac, Inc. | Film forming method for antireflection film, antireflection film, and film forming device |
| US20110094574A1 (en) * | 2009-10-27 | 2011-04-28 | Calisolar Inc. | Polarization Resistant Solar Cell Design Using SiCN |
| KR101155890B1 (ko) * | 2009-10-28 | 2012-06-20 | 엘지전자 주식회사 | 태양 전지 및 그 제조 방법 |
| US20110162706A1 (en) * | 2010-01-04 | 2011-07-07 | Applied Materials, Inc. | Passivated polysilicon emitter solar cell and method for manufacturing the same |
| US20130130430A1 (en) * | 2011-05-20 | 2013-05-23 | Solexel, Inc. | Spatially selective laser annealing applications in high-efficiency solar cells |
| FR2979434B1 (fr) * | 2011-08-24 | 2013-09-27 | Commissariat Energie Atomique | Procede de realisation d'un reflecteur optique a nanocristaux de semi-conducteur |
| EP2751846A4 (en) * | 2011-09-02 | 2015-06-03 | Amberwave Inc | SOLAR CELL |
| CN203325916U (zh) * | 2013-07-08 | 2013-12-04 | 浙江晶科能源有限公司 | 一种新型双层膜背面钝化太阳能电池结构 |
| CN103413840A (zh) * | 2013-08-14 | 2013-11-27 | 中节能太阳能科技（镇江）有限公司 | 一种抗pid效应的晶体硅太阳能电池及其制备方法 |
| KR101614190B1 (ko) * | 2013-12-24 | 2016-04-20 | 엘지전자 주식회사 | 태양전지 및 이의 제조 방법 |
| JP5735093B1 (ja) | 2013-12-24 | 2015-06-17 | 株式会社マテリアル・コンセプト | 太陽電池及びその製造方法 |
| US20160380124A1 (en) * | 2015-06-26 | 2016-12-29 | Michael C. Johnson | Surface passivation for solar cells |
| KR102272433B1 (ko) * | 2015-06-30 | 2021-07-05 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
| KR101661859B1 (ko) * | 2015-09-09 | 2016-09-30 | 엘지전자 주식회사 | 태양 전지 모듈 및 그 제조 방법 |
| JPWO2017057618A1 (ja) * | 2015-09-29 | 2018-03-15 | 京セラ株式会社 | 太陽電池素子およびその製造方法並びに太陽電池モジュール |
| CN107068774A (zh) * | 2017-03-30 | 2017-08-18 | 中国科学院半导体研究所 | 太阳能电池减反钝化膜及其制备方法及太阳能电池片 |
| CN108962999A (zh) | 2018-06-14 | 2018-12-07 | 东方日升（常州）新能源有限公司 | 太阳能电池减低反射率的复合膜及其制备方法 |
| CN109216473B (zh) | 2018-07-20 | 2019-10-11 | 常州大学 | 一种晶硅太阳电池的表界面钝化层及其钝化方法 |
| CN109004038B (zh) | 2018-07-26 | 2020-09-08 | 东莞南玻光伏科技有限公司 | 太阳能电池及其制备方法和光伏组件 |
| CN110896118A (zh) * | 2018-09-12 | 2020-03-20 | 福建金石能源有限公司 | 一种背接触异质结太阳能电池制作方法 |
| CN109935647B (zh) * | 2019-03-29 | 2021-09-14 | 天合光能股份有限公司 | 太阳能电池及其制备方法 |
| CN110061072A (zh) * | 2019-04-08 | 2019-07-26 | 国家电投集团西安太阳能电力有限公司 | 一种tbc太阳能电池结构及其制备方法 |
| KR102735357B1 (ko) * | 2019-04-25 | 2024-11-28 | 진가오 솔라 컴퍼니 리미티드 | 태양 전지 및 그 제조 방법 |
| CN111668318B (zh) * | 2020-05-29 | 2021-09-24 | 晶科绿能(上海)管理有限公司 | 一种光伏组件、太阳能电池及其制备方法 |
| CN112259615A (zh) | 2020-09-24 | 2021-01-22 | 华南理工大学 | 一种空间用GaAs太阳电池叠层减反射膜及其制备方法与应用 |
| CN112201701B (zh) * | 2020-09-30 | 2024-05-03 | 浙江晶科能源有限公司 | 太阳能电池和光伏组件 |
| CN112531035B (zh) | 2020-12-03 | 2022-04-29 | 通威太阳能（成都）有限公司 | 太阳电池及其制备方法、太阳电池背面多层复合钝化膜 |
| CN112713203A (zh) * | 2021-01-19 | 2021-04-27 | 天合光能股份有限公司 | 一种新型太阳能电池叠层钝化结构 |
| CN116314356A (zh) * | 2021-02-23 | 2023-06-23 | 浙江晶科能源有限公司 | 太阳能电池及其制作方法、太阳能组件 |
-
2021
- 2021-08-20 CN CN202110963291.4A patent/CN115472701B/zh active Active
- 2021-08-20 CN CN202310581751.6A patent/CN117766595A/zh active Pending
- 2021-09-17 EP EP23176118.0A patent/EP4220737B1/en active Active
- 2021-09-17 EP EP21197431.6A patent/EP4138147B1/en active Active
- 2021-09-17 EP EP23209099.3A patent/EP4394893A1/en active Pending
- 2021-09-17 PL PL21197431.6T patent/PL4138147T3/pl unknown
- 2021-09-17 AU AU2021232800A patent/AU2021232800B1/en active Active
- 2021-09-19 JP JP2021152725A patent/JP7073566B1/ja active Active
- 2021-09-23 US US17/483,712 patent/US11664467B2/en active Active
-
2022
- 2022-05-11 JP JP2022078217A patent/JP7194302B1/ja active Active
- 2022-06-23 AU AU2022204453A patent/AU2022204453B2/en active Active
-
2023
- 2023-04-03 US US18/295,210 patent/US12317635B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| EP4138147A1 (en) | 2023-02-22 |
| JP7073566B1 (ja) | 2022-05-23 |
| US20230253514A1 (en) | 2023-08-10 |
| AU2022204453A1 (en) | 2022-07-14 |
| US20230058215A1 (en) | 2023-02-23 |
| CN117766595A9 (zh) | 2025-11-25 |
| CN117766595A (zh) | 2024-03-26 |
| EP4394893A1 (en) | 2024-07-03 |
| CN115472701A (zh) | 2022-12-13 |
| US11664467B2 (en) | 2023-05-30 |
| CN115472701B (zh) | 2023-07-07 |
| EP4220737A1 (en) | 2023-08-02 |
| US12317635B2 (en) | 2025-05-27 |
| JP2023029145A (ja) | 2023-03-03 |
| EP4138147C0 (en) | 2023-07-26 |
| EP4138147B1 (en) | 2023-07-26 |
| JP7194302B1 (ja) | 2022-12-21 |
| JP2023029209A (ja) | 2023-03-03 |
| EP4220737B1 (en) | 2024-01-31 |
| AU2022204453B2 (en) | 2023-11-09 |
| AU2021232800B1 (en) | 2022-05-26 |
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