JP7301104B2 - 太陽電池及びその製造方法、光起電力モジュール - Google Patents
太陽電池及びその製造方法、光起電力モジュール Download PDFInfo
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- JP7301104B2 JP7301104B2 JP2021158240A JP2021158240A JP7301104B2 JP 7301104 B2 JP7301104 B2 JP 7301104B2 JP 2021158240 A JP2021158240 A JP 2021158240A JP 2021158240 A JP2021158240 A JP 2021158240A JP 7301104 B2 JP7301104 B2 JP 7301104B2
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 123
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
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- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/0214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
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- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
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Description
入射光の波長=4×厚さ×屈折率
調合された混酸でベース領域101の裏面のホウ珪酸ガラスを除去し、混酸には、質量分率が0.1%~10%のフッ化水素酸溶液、質量分率が10%~20%の硫酸溶液、及び質量分率が25%~50%の硝酸溶液が含まれ、酸洗いの時間は10s~180sである、酸洗いの温度は7°C~20°Cであるステップ、
酸洗い後の裏面1に対して水洗、乾燥処理を行うステップ。
なお、酸洗い後の基板100の裏面100bには、多孔質構造が現れる。
まず、アルカリ研磨後の基板100を堆積装置に置き、酸素源(例えば、酸素、亜酸化窒素、オゾンであってもよい)を20L~60L導入し、昇温速度0.5°C/min~3°C/minに従って堆積装置内の温度を560°C~620°Cに加熱し、堆積時間を3min~10minとし、トンネル酸化層121を形成し、酸素導入が終了した後、恒温段階に入り、その後、適量のシランガスを導入し、多結晶シリコン層を形成し、最後に、多結晶シリコン層をIn-situドープして、ドープ導電層122を形成する。
Claims (12)
- 対向する前面及び裏面を有する基板と、
前記前面に位置するパッシベーション積層体であって、前記パッシベーション積層体は、前記前面から離れる方向に順次設置された酸素含有誘電体層、第1パッシベーション層及び第2パッシベーション層を含み、ここで、前記酸素含有誘電体層は金属酸化物材料を含み、前記第1パッシベーション層は窒化ケイ素材料を含み、前記第2パッシベーション層は酸窒化ケイ素材料を含むパッシベーション積層体と、
前記裏面に位置しかつ前記裏面から離れる方向に順次設置されたトンネル酸化層及びドープ導電層とを備え、
そのうち、前記前面から離れる方向において、前記第1パッシベーション層における窒素元素含有量及びケイ素元素含有量は、増加してから減少する変化を示し、前記第2パッシベーション層における窒素元素含有量及びケイ素元素含有量は減少する変化を示し、前記第1パッシベーション層における酸素元素含有量は、減少してから増加する変化を示し、前記第2パッシベーション層における酸素元素含有量は増加する変化を示し、
前記ドープ導電層と前記基板とは、同じ導電型のドーパント元素を有する、
ことを特徴とする太陽電池。 - 前記前面から離れる方向において、前記パッシベーション積層体における酸素元素含有量の最大ピーク値と酸素元素含有量の第二ピーク値との間の距離は、40nm~100nmであり、ケイ素元素含有量の最大ピーク値と前記前面との間の距離は、0nmよりも大きくかつ30nm以下であり、窒素元素含有量の最大ピーク値と前記前面との間の距離は、30nm以上である、
ことを特徴とする請求項1に記載の太陽電池。 - 前記金属酸化物材料は、酸化アルミニウム、酸化チタン、酸化ガリウム、又は酸化ハフニウムのうちの少なくとも1つを含む、
ことを特徴とする請求項1又は2に記載の太陽電池。 - 前記酸素含有誘電体層における酸素元素含有量の割合は、15%~50%である、
ことを特徴とする請求項1又は2に記載の太陽電池。 - 前記第1パッシベーション層は、少なくとも2層のサブパッシベーション層を含み、前記前面から離れる方向において、隣接する前記サブパッシベーション層におけるケイ素元素含有量の割合は徐々に減少し、隣接する前記サブパッシベーション層における窒素元素含有量の割合は徐々に増加する、
ことを特徴とする請求項1又は2に記載の太陽電池。 - 前記第1パッシベーション層は、前記前面に最も近い下層サブパッシベーション層と、前記前面から最も遠い上層サブパッシベーション層とを含み、そのうち、前記下層サブパッシベーション層において、ケイ素元素含有量の割合は60%~70%であり、窒素元素含有量の割合は20%~40%であり、前記上層サブパッシベーション層において、ケイ素元素含有量の割合は45%~60%であり、窒素元素含有量の割合は30%~50%である、
ことを特徴とする請求項5に記載の太陽電池。 - 前記第2パッシベーション層において、ケイ素元素含有量の割合は30%~60%であり、酸素元素含有量の割合は3%~50%であり、窒素元素含有量の割合は5%~50%である、
ことを特徴とする請求項1又は6に記載の太陽電池。 - 前記前面に垂直な方向において、前記酸素含有誘電体層の厚さは、1nm~15nmである、
ことを特徴とする請求項1に記載の太陽電池。 - 前記前面に垂直な方向において、前記第1パッシベーション層の厚さは、30nm~60nmである、
ことを特徴とする請求項1に記載の太陽電池。 - 前記前面に垂直な方向において、前記第2パッシベーション層の厚さは、20nm~40nmである、
ことを特徴とする請求項1に記載の太陽電池。 - 複数の請求項1乃至10のいずれか一項に記載の太陽電池を接続することで形成されたセルストリングと、
前記セルストリングの表面を被覆するための封止用接着フィルムと、
前記封止用接着フィルムの前記セルストリングから離れた表面を覆うためのカバープレートとを備える、
ことを特徴とする光起電力モジュール。 - 基板を提供することであって、前記基板は、対向する前面及び裏面を有することと、
前記前面にパッシベーション積層体を形成することであって、前記パッシベーション積層体は、前記前面から離れる方向に順次設置された酸素含有誘電体層、第1パッシベーション層及び第2パッシベーション層を含み、ここで、前記酸素含有誘電体層は金属酸化物材料を含み、前記第1パッシベーション層は窒化ケイ素材料を含み、前記第2パッシベーション層は酸窒化ケイ素材料を含むことと、
前記裏面にかつ前記裏面から離れる方向にトンネル酸化層及びドープ導電層を順次形成することと、を含み、
そのうち、前記前面から離れる方向において、前記第1パッシベーション層における窒素元素含有量及びケイ素元素含有量は、増加してから減少する変化を示し、前記第2パッシベーション層における窒素元素含有量及びケイ素元素含有量は減少する変化を示し、前記第1パッシベーション層における酸素元素含有量は、減少してから増加する変化を示し、前記第2パッシベーション層における酸素元素含有量は増加する変化を示し、
前記ドープ導電層と前記基板とは、同じ導電型のドーパント元素を有する、
ことを特徴とする太陽電池の製造方法。
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