JP7148694B1 - 太陽電池およびその製造方法、光起電力モジュール - Google Patents
太陽電池およびその製造方法、光起電力モジュール Download PDFInfo
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- JP7148694B1 JP7148694B1 JP2021154789A JP2021154789A JP7148694B1 JP 7148694 B1 JP7148694 B1 JP 7148694B1 JP 2021154789 A JP2021154789 A JP 2021154789A JP 2021154789 A JP2021154789 A JP 2021154789A JP 7148694 B1 JP7148694 B1 JP 7148694B1
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
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- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0543—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the refractive type, e.g. lenses
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
- H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
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Abstract
Description
Claims (11)
- 対向する前面と裏面を有するベースと、
前記前面に位置しかつ前記前面から離れる方向に順次設置されている、誘電体材料を含む第1パッシベーション層、第1窒化ケイ素SimNn(n/m∈[0.5、1])材料を含む第2パッシベーション層、及び酸窒化ケイ素SiOiNj(j/i∈[0.1、0.6])材料を含む第3パッシベーション層と、
前記裏面に位置しかつ前記裏面から離れる方向に順次設置されている、トンネル酸化層及び前記ベースと同じ導電型のドーパントを有するドープ導電層と、を備え、
前記第1パッシベーション層の屈折率は1.6~1.7であり、前記第2パッシベーション層の屈折率は1.9~2.2であり、前記第3パッシベーション層の屈折率は1.45~1.8であることを特徴とする太陽電池。 - 前記誘電体材料は、酸化アルミニウム、酸化チタン、酸化ガリウム、酸化ハフニウムのうちの一種または複数種を含む、
ことを特徴とする請求項1に記載の太陽電池。 - 前記誘電体材料は、酸化アルミニウムAlxOy材料であり、且つy/x∈[1.1、1.5]である、
ことを特徴とする請求項2に記載の太陽電池。 - 前記前面に垂直な方向において、前記第1パッシベーション層の厚さは、3nm~10nmである、
ことを特徴とする請求項1に記載の太陽電池。 - 前記前面に垂直な方向において、前記第2パッシベーション層の厚さは、40nm~60nmである、
ことを特徴とする請求項1または4に記載の太陽電池。 - 前記前面に垂直な方向において、前記第3パッシベーション層の厚さは、20nm~50nmである、
ことを特徴とする請求項1に記載の太陽電池。 - 前記ドープ導電層における前記ベースから離反する側に位置する第4パッシベーション層をさらに備え、
前記第4パッシベーション層は、第2窒化ケイ素SiaNb(a/b∈[3.5、6.8])材料を含む、
ことを特徴とする請求項1に記載の太陽電池。 - 前記第4パッシベーション層の屈折率は、2.04~2.2であり、
前記裏面に垂直な方向において、前記第4パッシベーション層の厚さは、60nm~100nmである、
ことを特徴とする請求項7に記載の太陽電池。 - 前記第1パッシベーション層は、前記ベースと前記誘電体材料との間に介在している酸化ケイ素材料をさらに含む、
ことを特徴とする請求項1に記載の太陽電池。 - 前記ベースは、N型半導体ベースであり、
前記ドープ導電層は、N型ドープポリシリコン層、N型ドープ微結晶シリコン層、またはN型ドープアモルファスシリコン層のうちの少なくとも一種である、
ことを特徴とする請求項1に記載の太陽電池。 - 請求項1~10のいずれか1項に記載の太陽電池を複数接続してなるセルストリングと、
前記セルストリングの表面を覆うためのシーラントフィルムと、
前記シーラントフィルムにおける前記セルストリングから離反する表面を覆うためのカバープレートと、
を備えることを特徴とする光起電力モジュール。
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