JP2017526155A - 高エネルギギャップ(eg)材料を用いた太陽電池の受光面の不活性化 - Google Patents
高エネルギギャップ(eg)材料を用いた太陽電池の受光面の不活性化 Download PDFInfo
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- JP2017526155A JP2017526155A JP2016559970A JP2016559970A JP2017526155A JP 2017526155 A JP2017526155 A JP 2017526155A JP 2016559970 A JP2016559970 A JP 2016559970A JP 2016559970 A JP2016559970 A JP 2016559970A JP 2017526155 A JP2017526155 A JP 2017526155A
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- 239000000463 material Substances 0.000 title claims abstract description 196
- 230000009849 deactivation Effects 0.000 title claims description 9
- 150000004767 nitrides Chemical class 0.000 claims abstract description 109
- 239000000758 substrate Substances 0.000 claims abstract description 95
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- 238000002161 passivation Methods 0.000 claims abstract description 73
- 238000000034 method Methods 0.000 claims abstract description 53
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 48
- 229910052710 silicon Inorganic materials 0.000 claims description 48
- 239000010703 silicon Substances 0.000 claims description 48
- 238000005240 physical vapour deposition Methods 0.000 claims description 28
- 229910002601 GaN Inorganic materials 0.000 claims description 27
- 238000000231 atomic layer deposition Methods 0.000 claims description 26
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 26
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 25
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 25
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 23
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 21
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 20
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 17
- 238000004519 manufacturing process Methods 0.000 claims description 16
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 15
- 235000012239 silicon dioxide Nutrition 0.000 claims description 12
- 239000000377 silicon dioxide Substances 0.000 claims description 12
- 238000012876 topography Methods 0.000 claims description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 10
- 230000000415 inactivating effect Effects 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 9
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- 238000005229 chemical vapour deposition Methods 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 238000010521 absorption reaction Methods 0.000 claims description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
- 238000001228 spectrum Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 388
- 230000015556 catabolic process Effects 0.000 description 16
- 238000006731 degradation reaction Methods 0.000 description 16
- 238000000151 deposition Methods 0.000 description 10
- 239000010408 film Substances 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 229910002704 AlGaN Inorganic materials 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 230000002779 inactivation Effects 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 230000007774 longterm Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- 238000013459 approach Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
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- 239000011888 foil Substances 0.000 description 2
- 239000002784 hot electron Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910018516 Al—O Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
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- 230000005284 excitation Effects 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
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Abstract
Description
(項目1)
受光面を有する基板と、
上記基板の上記受光面上に配された不活性化用誘電体層と、
上記不活性化用誘電体層の上方に配された第III群窒化物材料層とを備える太陽電池。
(項目2)
上記不活性化用誘電体層と上記第III群窒化物材料層との間に直接配された界面層であって、上記不活性化用誘電体層とは異なり、かつ上記第III群窒化物材料層とも異なる材料を含む界面層を更に備える、項目1に記載の太陽電池。
(項目3)
上記界面層は、シリコンリッチな非晶質シリコン層であり、約30−50オングストロームの範囲の厚さを有する、項目2に記載の太陽電池。
(項目4)
上記界面層は、酸素を有しないシリコンベースの層であり、上記シリコンベースの層は、シリコンリッチな非晶質シリコン、真性又はリンでドープされた非晶質シリコン、及び多結晶シリコンからなる群から選択され、上記シリコンベースの層は、約10−200オングストロームの範囲の厚さを有する、項目2に記載の太陽電池。
(項目5)
上記第III群窒化物材料層は、上記不活性化用誘電体層上に配されている、項目1に記載の太陽電池。
(項目6)
上記第III群窒化物材料層は、窒化アルミニウム(AlN)層、窒化アルミニウムガリウム(Al x Ga 1−x N、ここで、0<x<1)層、及び窒化ガリウム(GaN)層からなる群から選択される、項目1に記載の太陽電池。
(項目7)
上記第III群窒化物材料層上に配された反射防止膜層(ARC層)であって、上記第III群窒化物材料層とは異なる材料を含むARC層を更に備える、項目1に記載の太陽電池。
(項目8)
上記ARC層は、酸化アルミニウム(AlO x 、xが1.5以下である)層及び酸窒化ケイ素(SiO y N z 、y>0、z>0)層からなる群から選択された層であり、上記ARC層及び上記第III群窒化物材料層は、上記太陽電池のための二層式反射防止膜を共に形成する、項目7に記載の太陽電池。
(項目9)
上記第III群窒化物材料層は、約50−900オングストロームの範囲の厚さを有し、約2.0−2.4の屈折率を有し、上記ARC層は、約300−1500オングストロームの範囲の厚さを有し、約1.8の屈折率を有する、項目8に記載の太陽電池。
(項目10)
上記第III群窒化物材料層及び上記ARC層は、上記太陽電池の電流増加及び安定性を共に提供する、項目9に記載の太陽電池。
(項目11)
上記ARC層は、水素化された窒化ケイ素(SiN:H)の層である、項目7に記載の太陽電池。
(項目12)
上記第III群窒化物材料層は、約30−100オングストロームの範囲の厚さを有し、約2.0−2.4の屈折率を有し、上記SiN:Hの層は、約700オングストロームの厚さを有し、約1.9超の屈折率を有する、項目11に記載の太陽電池。
(項目13)
上記第III群窒化物材料層及び上記ARC層は、上記太陽電池の安定性を共に提供する一方で、上記高バンドEg材料は、光生成スペクトルの吸収を伴わない不活性化を提供する、項目12に記載の太陽電池。
(項目14)
上記基板は結晶シリコン基板であり、上記不活性化用誘電体層は、約10−300オングストロームの範囲の厚さを有する二酸化ケイ素(SiO 2 )の層である、項目1に記載の太陽電池。
(項目15)
上記受光面は、テクスチャ化されたトポグラフィを有し、上記不活性化用誘電体層及び上記第III群窒化物材料層の両方は、上記受光面の上記テクスチャ化されたトポグラフィと整合される、項目1に記載の太陽電池。
(項目16)
上記基板は、上記受光面に対向する裏面を更に備え、上記太陽電池は、
上記基板の上記裏面にある又は上記基板の上記裏面の上方にある複数の交互するN型及びP型の半導体領域と、
上記複数の交互するN型及びP型の半導体領域に電気的に接続された導電性コンタクト構造体とを更に備える、項目1に記載の太陽電池。
(項目17)
受光面を有する基板と、
上記基板の上記受光面上に配された不活性化用誘電体層と、
上記不活性化用誘電体層の上方に配された大型の直接バンドギャップ材料層であって、少なくとも約3.3のエネルギギャップ(Eg)を有する大型の直接バンドギャップ材料層と、
上記大型の直接バンドギャップ材料層上に配された反射防止膜層(ARC層)であって、上記大型の直接バンドギャップ材料層とは異なる材料を含むARC層とを備える、太陽電池。
(項目18)
上記不活性化用誘電体層と上記大型の直接バンドギャップ材料層との間に直接配された界面層であって、上記不活性化用誘電体層とは異なり、かつ上記大型の直接バンドギャップ材料層とも異なる材料を含む界面層を更に備える、項目17に記載の太陽電池。
(項目19)
太陽電池を製造する方法であって、
基板の受光面上に不活性化用誘電体層を形成する段階と、
上記不活性化用誘電体層の上方に第III群窒化物材料層を形成する段階と、
上記第III群窒化物材料層上に反射防止膜(ARC)層を形成する段階とを備える、方法。
(項目20)
上記不活性化用誘電体層上に界面層を形成する段階を更に備え、上記第III群窒化物材料層を形成する上記段階は、上記界面層上に上記第III群窒化物材料層を形成する段階を含む、項目19に記載の方法。
(項目21)
上記第III群窒化物材料層を形成する上記段階は、金属有機化学蒸着(MOCVD)、分子線エピタキシャル成長(MBE)、及び物理蒸着(PVD)からなる群から選択された技術により、窒化アルミニウム(AlN)多結晶層、窒化アルミニウムガリウム(Al x Ga 1−x N、ここで、0<x<1)多結晶層、及び窒化ガリウム(GaN)多結晶層からなる群から選択された多結晶層を形成する段階を含むか、あるいは、プラズマ増強化学蒸着(PECVD)、原子層堆積(ALD)、プラズマ増強原子層堆積(PEALD)、分子線エピタキシャル成長(MBE)、及び物理蒸着(PVD)からなる群から選択された技術により、窒化アルミニウム(AlN)非晶質層、窒化アルミニウムガリウム(Al x Ga 1−x N、ここで、0<x<1)非晶質層、及び窒化ガリウム(GaN)非晶質層からなる群から選択された非晶質層を形成する段階を含む、項目19に記載の方法。
(項目22)
上記第III群窒化物材料層を形成する上記段階は、金属有機化学蒸着(MOCVD)、プラズマ増強化学蒸着(PECVD)、プラズマ増強原子層堆積(PEALD)、分子線エピタキシャル成長(MBE)、及び物理蒸着(PVD)からなる群から選択された技術により、窒化アルミニウム(AlN)多結晶層、窒化アルミニウムガリウム(Al x Ga 1−x N、ここで、0<x<1)多結晶層、及び窒化ガリウム(GaN)多結晶層からなる群から選択された多結晶層を形成する段階を含むか、あるいは、プラズマ増強化学蒸着(PECVD)、原子層堆積(ALD)、プラズマ増強原子層堆積(PEALD)、分子線エピタキシャル成長(MBE)、及び物理蒸着(PVD)からなる群から選択された技術により、窒化アルミニウム(AlN)非晶質層、窒化アルミニウムガリウム(Al x Ga 1−x N、ここで、0<x<1)非晶質層、及び窒化ガリウム(GaN)非晶質層からなる群から選択された非晶質層を形成する段階を含む、項目19に記載の方法。
(項目23)
項目19に記載の方法により製造された太陽電池。
(項目24)
受光面を有する結晶シリコン基板と、
上記結晶シリコン基板の上記受光面の上方に配された第III群窒化物材料層と、
上記第III群窒化物材料層上に配された反射防止膜層(ARC層)であって、上記第III群窒化物材料層とは異なる材料を含むARC層とを備える太陽電池。
(項目25)
上記第III群窒化物材料層は、上記結晶シリコン基板の上記受光面上に配されている、項目24に記載の太陽電池。
(項目26)
上記第III群窒化物材料層と上記結晶シリコン基板の上記受光面との間に直接配された界面層であって、上記第III群窒化物材料層とは異なる材料を含む界面層を更に備える、項目24に記載の太陽電池。
(項目27)
上記界面層は、シリコンリッチな非晶質シリコン層であり、約30−50オングストロームの範囲の厚さを有する、項目26に記載の太陽電池。
(項目28)
上記界面層は、酸素を有しないシリコンベースの層であり、上記シリコンベースの層は、シリコンリッチな非晶質シリコン、真性もしくはリンでドープされた非晶質シリコン、及び多結晶シリコンからなる群から選択され、上記シリコンベースの層は、約10−200オングストロームの範囲の厚さを有する、項目26に記載の太陽電池。
(項目29)
上記第III群窒化物材料層は、窒化アルミニウム(AlN)層、窒化アルミニウムガリウム(Al x Ga 1−x N、ここで、0<x<1)層、及び窒化ガリウム(GaN)層からなる群から選択される、項目24に記載の太陽電池。
(項目30)
上記ARC層は、窒化ケイ素の層を含む、項目24に記載の太陽電池。
Claims (30)
- 受光面を有する基板と、
前記基板の前記受光面上に配された不活性化用誘電体層と、
前記不活性化用誘電体層の上方に配された第III群窒化物材料層とを備える太陽電池。 - 前記不活性化用誘電体層と前記第III群窒化物材料層との間に直接配された界面層であって、前記不活性化用誘電体層とは異なり、かつ前記第III群窒化物材料層とも異なる材料を含む界面層を更に備える、請求項1に記載の太陽電池。
- 前記界面層は、シリコンリッチな非晶質シリコン層であり、約30−50オングストロームの範囲の厚さを有する、請求項2に記載の太陽電池。
- 前記界面層は、酸素を有しないシリコンベースの層であり、前記シリコンベースの層は、シリコンリッチな非晶質シリコン、真性又はリンでドープされた非晶質シリコン、及び多結晶シリコンからなる群から選択され、前記シリコンベースの層は、約10−200オングストロームの範囲の厚さを有する、請求項2に記載の太陽電池。
- 前記第III群窒化物材料層は、前記不活性化用誘電体層上に配されている、請求項1に記載の太陽電池。
- 前記第III群窒化物材料層は、窒化アルミニウム(AlN)層、窒化アルミニウムガリウム(AlxGa1−xN、ここで、0<x<1)層、及び窒化ガリウム(GaN)層からなる群から選択される、請求項1に記載の太陽電池。
- 前記第III群窒化物材料層上に配された反射防止膜層(ARC層)であって、前記第III群窒化物材料層とは異なる材料を含むARC層を更に備える、請求項1に記載の太陽電池。
- 前記ARC層は、酸化アルミニウム(AlOx、xが1.5以下である)層及び酸窒化ケイ素(SiOyNz、y>0、z>0)層からなる群から選択された層であり、前記ARC層及び前記第III群窒化物材料層は、前記太陽電池のための二層式反射防止膜を共に形成する、請求項7に記載の太陽電池。
- 前記第III群窒化物材料層は、約50−900オングストロームの範囲の厚さを有し、約2.0−2.4の屈折率を有し、前記ARC層は、約300−1500オングストロームの範囲の厚さを有し、約1.8の屈折率を有する、請求項8に記載の太陽電池。
- 前記第III群窒化物材料層及び前記ARC層は、前記太陽電池の電流増加及び安定性を共に提供する、請求項9に記載の太陽電池。
- 前記ARC層は、水素化された窒化ケイ素(SiN:H)の層である、請求項7に記載の太陽電池。
- 前記第III群窒化物材料層は、約30−100オングストロームの範囲の厚さを有し、約2.0−2.4の屈折率を有し、前記SiN:Hの層は、約700オングストロームの厚さを有し、約1.9超の屈折率を有する、請求項11に記載の太陽電池。
- 前記第III群窒化物材料層及び前記ARC層は、前記太陽電池の安定性を共に提供する一方で、前記高バンドEg材料は、光生成スペクトルの吸収を伴わない不活性化を提供する、請求項12に記載の太陽電池。
- 前記基板は結晶シリコン基板であり、前記不活性化用誘電体層は、約10−300オングストロームの範囲の厚さを有する二酸化ケイ素(SiO2)の層である、請求項1に記載の太陽電池。
- 前記受光面は、テクスチャ化されたトポグラフィを有し、前記不活性化用誘電体層及び前記第III群窒化物材料層の両方は、前記受光面の前記テクスチャ化されたトポグラフィと整合される、請求項1に記載の太陽電池。
- 前記基板は、前記受光面に対向する裏面を更に備え、前記太陽電池は、
前記基板の前記裏面にある又は前記基板の前記裏面の上方にある複数の交互するN型及びP型の半導体領域と、
前記複数の交互するN型及びP型の半導体領域に電気的に接続された導電性コンタクト構造体とを更に備える、請求項1に記載の太陽電池。 - 受光面を有する基板と、
前記基板の前記受光面上に配された不活性化用誘電体層と、
前記不活性化用誘電体層の上方に配された大型の直接バンドギャップ材料層であって、少なくとも約3.3のエネルギギャップ(Eg)を有する大型の直接バンドギャップ材料層と、
前記大型の直接バンドギャップ材料層上に配された反射防止膜層(ARC層)であって、前記大型の直接バンドギャップ材料層とは異なる材料を含むARC層とを備える、太陽電池。 - 前記不活性化用誘電体層と前記大型の直接バンドギャップ材料層との間に直接配された界面層であって、前記不活性化用誘電体層とは異なり、かつ前記大型の直接バンドギャップ材料層とも異なる材料を含む界面層を更に備える、請求項17に記載の太陽電池。
- 太陽電池を製造する方法であって、
基板の受光面上に不活性化用誘電体層を形成する段階と、
前記不活性化用誘電体層の上方に第III群窒化物材料層を形成する段階と、
前記第III群窒化物材料層上に反射防止膜(ARC)層を形成する段階とを備える、方法。 - 前記不活性化用誘電体層上に界面層を形成する段階を更に備え、前記第III群窒化物材料層を形成する前記段階は、前記界面層上に前記第III群窒化物材料層を形成する段階を含む、請求項19に記載の方法。
- 前記第III群窒化物材料層を形成する前記段階は、金属有機化学蒸着(MOCVD)、分子線エピタキシャル成長(MBE)、及び物理蒸着(PVD)からなる群から選択された技術により、窒化アルミニウム(AlN)多結晶層、窒化アルミニウムガリウム(AlxGa1−xN、ここで、0<x<1)多結晶層、及び窒化ガリウム(GaN)多結晶層からなる群から選択された多結晶層を形成する段階を含むか、あるいは、プラズマ増強化学蒸着(PECVD)、原子層堆積(ALD)、プラズマ増強原子層堆積(PEALD)、分子線エピタキシャル成長(MBE)、及び物理蒸着(PVD)からなる群から選択された技術により、窒化アルミニウム(AlN)非晶質層、窒化アルミニウムガリウム(AlxGa1−xN、ここで、0<x<1)非晶質層、及び窒化ガリウム(GaN)非晶質層からなる群から選択された非晶質層を形成する段階を含む、請求項19に記載の方法。
- 前記第III群窒化物材料層を形成する前記段階は、金属有機化学蒸着(MOCVD)、プラズマ増強化学蒸着(PECVD)、プラズマ増強原子層堆積(PEALD)、分子線エピタキシャル成長(MBE)、及び物理蒸着(PVD)からなる群から選択された技術により、窒化アルミニウム(AlN)多結晶層、窒化アルミニウムガリウム(AlxGa1−xN、ここで、0<x<1)多結晶層、及び窒化ガリウム(GaN)多結晶層からなる群から選択された多結晶層を形成する段階を含むか、あるいは、プラズマ増強化学蒸着(PECVD)、原子層堆積(ALD)、プラズマ増強原子層堆積(PEALD)、分子線エピタキシャル成長(MBE)、及び物理蒸着(PVD)からなる群から選択された技術により、窒化アルミニウム(AlN)非晶質層、窒化アルミニウムガリウム(AlxGa1−xN、ここで、0<x<1)非晶質層、及び窒化ガリウム(GaN)非晶質層からなる群から選択された非晶質層を形成する段階を含む、請求項19に記載の方法。
- 請求項19に記載の方法により製造された太陽電池。
- 受光面を有する結晶シリコン基板と、
前記結晶シリコン基板の前記受光面の上方に配された第III群窒化物材料層と、
前記第III群窒化物材料層上に配された反射防止膜層(ARC層)であって、前記第III群窒化物材料層とは異なる材料を含むARC層とを備える太陽電池。 - 前記第III群窒化物材料層は、前記結晶シリコン基板の前記受光面上に配されている、請求項24に記載の太陽電池。
- 前記第III群窒化物材料層と前記結晶シリコン基板の前記受光面との間に直接配された界面層であって、前記第III群窒化物材料層とは異なる材料を含む界面層を更に備える、請求項24に記載の太陽電池。
- 前記界面層は、シリコンリッチな非晶質シリコン層であり、約30−50オングストロームの範囲の厚さを有する、請求項26に記載の太陽電池。
- 前記界面層は、酸素を有しないシリコンベースの層であり、前記シリコンベースの層は、シリコンリッチな非晶質シリコン、真性もしくはリンでドープされた非晶質シリコン、及び多結晶シリコンからなる群から選択され、前記シリコンベースの層は、約10−200オングストロームの範囲の厚さを有する、請求項26に記載の太陽電池。
- 前記第III群窒化物材料層は、窒化アルミニウム(AlN)層、窒化アルミニウムガリウム(AlxGa1−xN、ここで、0<x<1)層、及び窒化ガリウム(GaN)層からなる群から選択される、請求項24に記載の太陽電池。
- 前記ARC層は、窒化ケイ素の層を含む、請求項24に記載の太陽電池。
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JP7148694B1 (ja) | 2021-08-26 | 2022-10-05 | 上海晶科緑能企業管理有限公司 | 太陽電池およびその製造方法、光起電力モジュール |
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US10378106B2 (en) | 2008-11-14 | 2019-08-13 | Asm Ip Holding B.V. | Method of forming insulation film by modified PEALD |
US9394608B2 (en) | 2009-04-06 | 2016-07-19 | Asm America, Inc. | Semiconductor processing reactor and components thereof |
US8802201B2 (en) | 2009-08-14 | 2014-08-12 | Asm America, Inc. | Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species |
US9312155B2 (en) | 2011-06-06 | 2016-04-12 | Asm Japan K.K. | High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules |
US10364496B2 (en) | 2011-06-27 | 2019-07-30 | Asm Ip Holding B.V. | Dual section module having shared and unshared mass flow controllers |
US10854498B2 (en) | 2011-07-15 | 2020-12-01 | Asm Ip Holding B.V. | Wafer-supporting device and method for producing same |
US20130023129A1 (en) | 2011-07-20 | 2013-01-24 | Asm America, Inc. | Pressure transmitter for a semiconductor processing environment |
US9017481B1 (en) | 2011-10-28 | 2015-04-28 | Asm America, Inc. | Process feed management for semiconductor substrate processing |
US9659799B2 (en) | 2012-08-28 | 2017-05-23 | Asm Ip Holding B.V. | Systems and methods for dynamic semiconductor process scheduling |
US10714315B2 (en) | 2012-10-12 | 2020-07-14 | Asm Ip Holdings B.V. | Semiconductor reaction chamber showerhead |
US20160376700A1 (en) | 2013-02-01 | 2016-12-29 | Asm Ip Holding B.V. | System for treatment of deposition reactor |
US9484191B2 (en) | 2013-03-08 | 2016-11-01 | Asm Ip Holding B.V. | Pulsed remote plasma method and system |
US9589770B2 (en) | 2013-03-08 | 2017-03-07 | Asm Ip Holding B.V. | Method and systems for in-situ formation of intermediate reactive species |
US9240412B2 (en) | 2013-09-27 | 2016-01-19 | Asm Ip Holding B.V. | Semiconductor structure and device and methods of forming same using selective epitaxial process |
US10683571B2 (en) | 2014-02-25 | 2020-06-16 | Asm Ip Holding B.V. | Gas supply manifold and method of supplying gases to chamber using same |
US10167557B2 (en) | 2014-03-18 | 2019-01-01 | Asm Ip Holding B.V. | Gas distribution system, reactor including the system, and methods of using the same |
US11015245B2 (en) | 2014-03-19 | 2021-05-25 | Asm Ip Holding B.V. | Gas-phase reactor and system having exhaust plenum and components thereof |
US10858737B2 (en) | 2014-07-28 | 2020-12-08 | Asm Ip Holding B.V. | Showerhead assembly and components thereof |
US9890456B2 (en) | 2014-08-21 | 2018-02-13 | Asm Ip Holding B.V. | Method and system for in situ formation of gas-phase compounds |
US9657845B2 (en) | 2014-10-07 | 2017-05-23 | Asm Ip Holding B.V. | Variable conductance gas distribution apparatus and method |
US10941490B2 (en) | 2014-10-07 | 2021-03-09 | Asm Ip Holding B.V. | Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same |
KR102263121B1 (ko) | 2014-12-22 | 2021-06-09 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자 및 그 제조 방법 |
US10529542B2 (en) | 2015-03-11 | 2020-01-07 | Asm Ip Holdings B.V. | Cross-flow reactor and method |
US10276355B2 (en) | 2015-03-12 | 2019-04-30 | Asm Ip Holding B.V. | Multi-zone reactor, system including the reactor, and method of using the same |
US10458018B2 (en) | 2015-06-26 | 2019-10-29 | Asm Ip Holding B.V. | Structures including metal carbide material, devices including the structures, and methods of forming same |
US10600673B2 (en) | 2015-07-07 | 2020-03-24 | Asm Ip Holding B.V. | Magnetic susceptor to baseplate seal |
US9960072B2 (en) | 2015-09-29 | 2018-05-01 | Asm Ip Holding B.V. | Variable adjustment for precise matching of multiple chamber cavity housings |
US10211308B2 (en) | 2015-10-21 | 2019-02-19 | Asm Ip Holding B.V. | NbMC layers |
US10322384B2 (en) | 2015-11-09 | 2019-06-18 | Asm Ip Holding B.V. | Counter flow mixer for process chamber |
US11139308B2 (en) | 2015-12-29 | 2021-10-05 | Asm Ip Holding B.V. | Atomic layer deposition of III-V compounds to form V-NAND devices |
US10468251B2 (en) | 2016-02-19 | 2019-11-05 | Asm Ip Holding B.V. | Method for forming spacers using silicon nitride film for spacer-defined multiple patterning |
US10529554B2 (en) | 2016-02-19 | 2020-01-07 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
US10501866B2 (en) | 2016-03-09 | 2019-12-10 | Asm Ip Holding B.V. | Gas distribution apparatus for improved film uniformity in an epitaxial system |
US10343920B2 (en) | 2016-03-18 | 2019-07-09 | Asm Ip Holding B.V. | Aligned carbon nanotubes |
US9892913B2 (en) | 2016-03-24 | 2018-02-13 | Asm Ip Holding B.V. | Radial and thickness control via biased multi-port injection settings |
US10865475B2 (en) | 2016-04-21 | 2020-12-15 | Asm Ip Holding B.V. | Deposition of metal borides and silicides |
US10190213B2 (en) | 2016-04-21 | 2019-01-29 | Asm Ip Holding B.V. | Deposition of metal borides |
US10032628B2 (en) | 2016-05-02 | 2018-07-24 | Asm Ip Holding B.V. | Source/drain performance through conformal solid state doping |
US10367080B2 (en) | 2016-05-02 | 2019-07-30 | Asm Ip Holding B.V. | Method of forming a germanium oxynitride film |
KR102592471B1 (ko) | 2016-05-17 | 2023-10-20 | 에이에스엠 아이피 홀딩 비.브이. | 금속 배선 형성 방법 및 이를 이용한 반도체 장치의 제조 방법 |
US11453943B2 (en) | 2016-05-25 | 2022-09-27 | Asm Ip Holding B.V. | Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor |
WO2017222537A1 (en) * | 2016-06-23 | 2017-12-28 | Sunpower Corporation | Surface passivation for solar cells |
US10388509B2 (en) | 2016-06-28 | 2019-08-20 | Asm Ip Holding B.V. | Formation of epitaxial layers via dislocation filtering |
US9859151B1 (en) | 2016-07-08 | 2018-01-02 | Asm Ip Holding B.V. | Selective film deposition method to form air gaps |
US10612137B2 (en) | 2016-07-08 | 2020-04-07 | Asm Ip Holdings B.V. | Organic reactants for atomic layer deposition |
US10714385B2 (en) | 2016-07-19 | 2020-07-14 | Asm Ip Holding B.V. | Selective deposition of tungsten |
KR102354490B1 (ko) | 2016-07-27 | 2022-01-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 |
KR102532607B1 (ko) | 2016-07-28 | 2023-05-15 | 에이에스엠 아이피 홀딩 비.브이. | 기판 가공 장치 및 그 동작 방법 |
US9887082B1 (en) | 2016-07-28 | 2018-02-06 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US10395919B2 (en) | 2016-07-28 | 2019-08-27 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US9812320B1 (en) | 2016-07-28 | 2017-11-07 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
KR102613349B1 (ko) | 2016-08-25 | 2023-12-14 | 에이에스엠 아이피 홀딩 비.브이. | 배기 장치 및 이를 이용한 기판 가공 장치와 박막 제조 방법 |
US10410943B2 (en) | 2016-10-13 | 2019-09-10 | Asm Ip Holding B.V. | Method for passivating a surface of a semiconductor and related systems |
US10643826B2 (en) | 2016-10-26 | 2020-05-05 | Asm Ip Holdings B.V. | Methods for thermally calibrating reaction chambers |
US11532757B2 (en) | 2016-10-27 | 2022-12-20 | Asm Ip Holding B.V. | Deposition of charge trapping layers |
US10714350B2 (en) | 2016-11-01 | 2020-07-14 | ASM IP Holdings, B.V. | Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US10229833B2 (en) | 2016-11-01 | 2019-03-12 | Asm Ip Holding B.V. | Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US10643904B2 (en) | 2016-11-01 | 2020-05-05 | Asm Ip Holdings B.V. | Methods for forming a semiconductor device and related semiconductor device structures |
US10435790B2 (en) | 2016-11-01 | 2019-10-08 | Asm Ip Holding B.V. | Method of subatmospheric plasma-enhanced ALD using capacitively coupled electrodes with narrow gap |
US10134757B2 (en) | 2016-11-07 | 2018-11-20 | Asm Ip Holding B.V. | Method of processing a substrate and a device manufactured by using the method |
US20180138328A1 (en) * | 2016-11-11 | 2018-05-17 | Sunpower Corporation | Uv-curing of light-receiving surfaces of solar cells |
KR102546317B1 (ko) | 2016-11-15 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | 기체 공급 유닛 및 이를 포함하는 기판 처리 장치 |
US10340135B2 (en) | 2016-11-28 | 2019-07-02 | Asm Ip Holding B.V. | Method of topologically restricted plasma-enhanced cyclic deposition of silicon or metal nitride |
KR20180068582A (ko) | 2016-12-14 | 2018-06-22 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US11581186B2 (en) | 2016-12-15 | 2023-02-14 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
US11447861B2 (en) | 2016-12-15 | 2022-09-20 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
US20190386158A1 (en) * | 2016-12-16 | 2019-12-19 | Sunpower Corporation | Plasma-curing of light-receiving surfaces of solar cells |
KR20180070971A (ko) | 2016-12-19 | 2018-06-27 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US10269558B2 (en) | 2016-12-22 | 2019-04-23 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US10867788B2 (en) | 2016-12-28 | 2020-12-15 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US20190348563A1 (en) | 2017-01-05 | 2019-11-14 | Brilliant Light Power, Inc. | Extreme and deep ultraviolet photovoltaic cell |
US11390950B2 (en) | 2017-01-10 | 2022-07-19 | Asm Ip Holding B.V. | Reactor system and method to reduce residue buildup during a film deposition process |
US10655221B2 (en) | 2017-02-09 | 2020-05-19 | Asm Ip Holding B.V. | Method for depositing oxide film by thermal ALD and PEALD |
US10468261B2 (en) | 2017-02-15 | 2019-11-05 | Asm Ip Holding B.V. | Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures |
US10529563B2 (en) | 2017-03-29 | 2020-01-07 | Asm Ip Holdings B.V. | Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures |
US10283353B2 (en) | 2017-03-29 | 2019-05-07 | Asm Ip Holding B.V. | Method of reforming insulating film deposited on substrate with recess pattern |
KR102457289B1 (ko) | 2017-04-25 | 2022-10-21 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 및 반도체 장치의 제조 방법 |
US10892156B2 (en) | 2017-05-08 | 2021-01-12 | Asm Ip Holding B.V. | Methods for forming a silicon nitride film on a substrate and related semiconductor device structures |
US10770286B2 (en) | 2017-05-08 | 2020-09-08 | Asm Ip Holdings B.V. | Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures |
US10446393B2 (en) | 2017-05-08 | 2019-10-15 | Asm Ip Holding B.V. | Methods for forming silicon-containing epitaxial layers and related semiconductor device structures |
US10504742B2 (en) | 2017-05-31 | 2019-12-10 | Asm Ip Holding B.V. | Method of atomic layer etching using hydrogen plasma |
US10886123B2 (en) | 2017-06-02 | 2021-01-05 | Asm Ip Holding B.V. | Methods for forming low temperature semiconductor layers and related semiconductor device structures |
CN107240612B (zh) * | 2017-06-06 | 2019-02-12 | 界首市七曜新能源有限公司 | 单晶硅太阳能板 |
US11306395B2 (en) | 2017-06-28 | 2022-04-19 | Asm Ip Holding B.V. | Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus |
US10685834B2 (en) | 2017-07-05 | 2020-06-16 | Asm Ip Holdings B.V. | Methods for forming a silicon germanium tin layer and related semiconductor device structures |
KR20190009245A (ko) | 2017-07-18 | 2019-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물 |
US11018002B2 (en) | 2017-07-19 | 2021-05-25 | Asm Ip Holding B.V. | Method for selectively depositing a Group IV semiconductor and related semiconductor device structures |
US11374112B2 (en) | 2017-07-19 | 2022-06-28 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US10541333B2 (en) | 2017-07-19 | 2020-01-21 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US10605530B2 (en) | 2017-07-26 | 2020-03-31 | Asm Ip Holding B.V. | Assembly of a liner and a flange for a vertical furnace as well as the liner and the vertical furnace |
US10312055B2 (en) | 2017-07-26 | 2019-06-04 | Asm Ip Holding B.V. | Method of depositing film by PEALD using negative bias |
US10590535B2 (en) | 2017-07-26 | 2020-03-17 | Asm Ip Holdings B.V. | Chemical treatment, deposition and/or infiltration apparatus and method for using the same |
US10770336B2 (en) | 2017-08-08 | 2020-09-08 | Asm Ip Holding B.V. | Substrate lift mechanism and reactor including same |
US10692741B2 (en) | 2017-08-08 | 2020-06-23 | Asm Ip Holdings B.V. | Radiation shield |
US11139191B2 (en) | 2017-08-09 | 2021-10-05 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US11769682B2 (en) | 2017-08-09 | 2023-09-26 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US10249524B2 (en) | 2017-08-09 | 2019-04-02 | Asm Ip Holding B.V. | Cassette holder assembly for a substrate cassette and holding member for use in such assembly |
USD900036S1 (en) | 2017-08-24 | 2020-10-27 | Asm Ip Holding B.V. | Heater electrical connector and adapter |
US11830730B2 (en) | 2017-08-29 | 2023-11-28 | Asm Ip Holding B.V. | Layer forming method and apparatus |
US11295980B2 (en) | 2017-08-30 | 2022-04-05 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
US11056344B2 (en) | 2017-08-30 | 2021-07-06 | Asm Ip Holding B.V. | Layer forming method |
KR102491945B1 (ko) | 2017-08-30 | 2023-01-26 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
KR102401446B1 (ko) | 2017-08-31 | 2022-05-24 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US10607895B2 (en) | 2017-09-18 | 2020-03-31 | Asm Ip Holdings B.V. | Method for forming a semiconductor device structure comprising a gate fill metal |
KR102630301B1 (ko) | 2017-09-21 | 2024-01-29 | 에이에스엠 아이피 홀딩 비.브이. | 침투성 재료의 순차 침투 합성 방법 처리 및 이를 이용하여 형성된 구조물 및 장치 |
US10844484B2 (en) | 2017-09-22 | 2020-11-24 | Asm Ip Holding B.V. | Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
US10658205B2 (en) | 2017-09-28 | 2020-05-19 | Asm Ip Holdings B.V. | Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber |
US10403504B2 (en) | 2017-10-05 | 2019-09-03 | Asm Ip Holding B.V. | Method for selectively depositing a metallic film on a substrate |
US10319588B2 (en) | 2017-10-10 | 2019-06-11 | Asm Ip Holding B.V. | Method for depositing a metal chalcogenide on a substrate by cyclical deposition |
US10923344B2 (en) | 2017-10-30 | 2021-02-16 | Asm Ip Holding B.V. | Methods for forming a semiconductor structure and related semiconductor structures |
KR102443047B1 (ko) | 2017-11-16 | 2022-09-14 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 방법 및 그에 의해 제조된 장치 |
US10910262B2 (en) | 2017-11-16 | 2021-02-02 | Asm Ip Holding B.V. | Method of selectively depositing a capping layer structure on a semiconductor device structure |
US11022879B2 (en) | 2017-11-24 | 2021-06-01 | Asm Ip Holding B.V. | Method of forming an enhanced unexposed photoresist layer |
KR102597978B1 (ko) | 2017-11-27 | 2023-11-06 | 에이에스엠 아이피 홀딩 비.브이. | 배치 퍼니스와 함께 사용하기 위한 웨이퍼 카세트를 보관하기 위한 보관 장치 |
CN111344522B (zh) | 2017-11-27 | 2022-04-12 | 阿斯莫Ip控股公司 | 包括洁净迷你环境的装置 |
US10290508B1 (en) | 2017-12-05 | 2019-05-14 | Asm Ip Holding B.V. | Method for forming vertical spacers for spacer-defined patterning |
US10872771B2 (en) | 2018-01-16 | 2020-12-22 | Asm Ip Holding B. V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
TW202325889A (zh) | 2018-01-19 | 2023-07-01 | 荷蘭商Asm 智慧財產控股公司 | 沈積方法 |
KR20200108016A (ko) | 2018-01-19 | 2020-09-16 | 에이에스엠 아이피 홀딩 비.브이. | 플라즈마 보조 증착에 의해 갭 충진 층을 증착하는 방법 |
USD903477S1 (en) | 2018-01-24 | 2020-12-01 | Asm Ip Holdings B.V. | Metal clamp |
US11018047B2 (en) | 2018-01-25 | 2021-05-25 | Asm Ip Holding B.V. | Hybrid lift pin |
USD880437S1 (en) | 2018-02-01 | 2020-04-07 | Asm Ip Holding B.V. | Gas supply plate for semiconductor manufacturing apparatus |
US10535516B2 (en) | 2018-02-01 | 2020-01-14 | Asm Ip Holdings B.V. | Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures |
US11081345B2 (en) | 2018-02-06 | 2021-08-03 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
CN111699278B (zh) | 2018-02-14 | 2023-05-16 | Asm Ip私人控股有限公司 | 通过循环沉积工艺在衬底上沉积含钌膜的方法 |
US10896820B2 (en) | 2018-02-14 | 2021-01-19 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
US10731249B2 (en) | 2018-02-15 | 2020-08-04 | Asm Ip Holding B.V. | Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus |
US10658181B2 (en) | 2018-02-20 | 2020-05-19 | Asm Ip Holding B.V. | Method of spacer-defined direct patterning in semiconductor fabrication |
KR102636427B1 (ko) | 2018-02-20 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 및 장치 |
US10975470B2 (en) | 2018-02-23 | 2021-04-13 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
US11473195B2 (en) | 2018-03-01 | 2022-10-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
US11629406B2 (en) | 2018-03-09 | 2023-04-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate |
US11114283B2 (en) | 2018-03-16 | 2021-09-07 | Asm Ip Holding B.V. | Reactor, system including the reactor, and methods of manufacturing and using same |
KR102646467B1 (ko) | 2018-03-27 | 2024-03-11 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조 |
US11230766B2 (en) | 2018-03-29 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11088002B2 (en) | 2018-03-29 | 2021-08-10 | Asm Ip Holding B.V. | Substrate rack and a substrate processing system and method |
US10510536B2 (en) | 2018-03-29 | 2019-12-17 | Asm Ip Holding B.V. | Method of depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber |
KR102501472B1 (ko) | 2018-03-30 | 2023-02-20 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 |
TWI811348B (zh) | 2018-05-08 | 2023-08-11 | 荷蘭商Asm 智慧財產控股公司 | 藉由循環沉積製程於基板上沉積氧化物膜之方法及相關裝置結構 |
TW202349473A (zh) | 2018-05-11 | 2023-12-16 | 荷蘭商Asm Ip私人控股有限公司 | 用於基板上形成摻雜金屬碳化物薄膜之方法及相關半導體元件結構 |
KR102596988B1 (ko) | 2018-05-28 | 2023-10-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 및 그에 의해 제조된 장치 |
US11718913B2 (en) | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
US11270899B2 (en) | 2018-06-04 | 2022-03-08 | Asm Ip Holding B.V. | Wafer handling chamber with moisture reduction |
US11286562B2 (en) | 2018-06-08 | 2022-03-29 | Asm Ip Holding B.V. | Gas-phase chemical reactor and method of using same |
US10797133B2 (en) | 2018-06-21 | 2020-10-06 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
KR102568797B1 (ko) | 2018-06-21 | 2023-08-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 시스템 |
CN112292478A (zh) | 2018-06-27 | 2021-01-29 | Asm Ip私人控股有限公司 | 用于形成含金属的材料的循环沉积方法及包含含金属的材料的膜和结构 |
TWI815915B (zh) | 2018-06-27 | 2023-09-21 | 荷蘭商Asm Ip私人控股有限公司 | 用於形成含金屬材料及包含含金屬材料的膜及結構之循環沉積方法 |
KR20200002519A (ko) | 2018-06-29 | 2020-01-08 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 및 반도체 장치의 제조 방법 |
US10612136B2 (en) | 2018-06-29 | 2020-04-07 | ASM IP Holding, B.V. | Temperature-controlled flange and reactor system including same |
US10388513B1 (en) | 2018-07-03 | 2019-08-20 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10755922B2 (en) | 2018-07-03 | 2020-08-25 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10767789B2 (en) | 2018-07-16 | 2020-09-08 | Asm Ip Holding B.V. | Diaphragm valves, valve components, and methods for forming valve components |
US10483099B1 (en) | 2018-07-26 | 2019-11-19 | Asm Ip Holding B.V. | Method for forming thermally stable organosilicon polymer film |
US11053591B2 (en) | 2018-08-06 | 2021-07-06 | Asm Ip Holding B.V. | Multi-port gas injection system and reactor system including same |
US10883175B2 (en) | 2018-08-09 | 2021-01-05 | Asm Ip Holding B.V. | Vertical furnace for processing substrates and a liner for use therein |
US10829852B2 (en) | 2018-08-16 | 2020-11-10 | Asm Ip Holding B.V. | Gas distribution device for a wafer processing apparatus |
US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
US11024523B2 (en) | 2018-09-11 | 2021-06-01 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
KR20200030162A (ko) | 2018-09-11 | 2020-03-20 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 |
US11049751B2 (en) | 2018-09-14 | 2021-06-29 | Asm Ip Holding B.V. | Cassette supply system to store and handle cassettes and processing apparatus equipped therewith |
CN110970344A (zh) | 2018-10-01 | 2020-04-07 | Asm Ip控股有限公司 | 衬底保持设备、包含所述设备的系统及其使用方法 |
US11232963B2 (en) | 2018-10-03 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
KR102592699B1 (ko) | 2018-10-08 | 2023-10-23 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치 |
US10847365B2 (en) | 2018-10-11 | 2020-11-24 | Asm Ip Holding B.V. | Method of forming conformal silicon carbide film by cyclic CVD |
US10811256B2 (en) | 2018-10-16 | 2020-10-20 | Asm Ip Holding B.V. | Method for etching a carbon-containing feature |
KR102546322B1 (ko) | 2018-10-19 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 기판 처리 방법 |
KR102605121B1 (ko) | 2018-10-19 | 2023-11-23 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 기판 처리 방법 |
USD948463S1 (en) | 2018-10-24 | 2022-04-12 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate supporting apparatus |
US10381219B1 (en) | 2018-10-25 | 2019-08-13 | Asm Ip Holding B.V. | Methods for forming a silicon nitride film |
US11087997B2 (en) | 2018-10-31 | 2021-08-10 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
KR20200051105A (ko) | 2018-11-02 | 2020-05-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 유닛 및 이를 포함하는 기판 처리 장치 |
US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
US11031242B2 (en) | 2018-11-07 | 2021-06-08 | Asm Ip Holding B.V. | Methods for depositing a boron doped silicon germanium film |
US10847366B2 (en) | 2018-11-16 | 2020-11-24 | Asm Ip Holding B.V. | Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process |
US10818758B2 (en) | 2018-11-16 | 2020-10-27 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
US10559458B1 (en) | 2018-11-26 | 2020-02-11 | Asm Ip Holding B.V. | Method of forming oxynitride film |
US11217444B2 (en) | 2018-11-30 | 2022-01-04 | Asm Ip Holding B.V. | Method for forming an ultraviolet radiation responsive metal oxide-containing film |
KR102636428B1 (ko) | 2018-12-04 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치를 세정하는 방법 |
US11158513B2 (en) | 2018-12-13 | 2021-10-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
TW202037745A (zh) | 2018-12-14 | 2020-10-16 | 荷蘭商Asm Ip私人控股有限公司 | 形成裝置結構之方法、其所形成之結構及施行其之系統 |
TW202405220A (zh) | 2019-01-17 | 2024-02-01 | 荷蘭商Asm Ip 私人控股有限公司 | 藉由循環沈積製程於基板上形成含過渡金屬膜之方法 |
KR20200091543A (ko) | 2019-01-22 | 2020-07-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
CN111524788B (zh) | 2019-02-01 | 2023-11-24 | Asm Ip私人控股有限公司 | 氧化硅的拓扑选择性膜形成的方法 |
JP2020136678A (ja) | 2019-02-20 | 2020-08-31 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基材表面内に形成された凹部を充填するための方法および装置 |
KR102626263B1 (ko) | 2019-02-20 | 2024-01-16 | 에이에스엠 아이피 홀딩 비.브이. | 처리 단계를 포함하는 주기적 증착 방법 및 이를 위한 장치 |
KR20200102357A (ko) | 2019-02-20 | 2020-08-31 | 에이에스엠 아이피 홀딩 비.브이. | 3-d nand 응용의 플러그 충진체 증착용 장치 및 방법 |
CN111593319B (zh) | 2019-02-20 | 2023-05-30 | Asm Ip私人控股有限公司 | 用于填充在衬底表面内形成的凹部的循环沉积方法和设备 |
JP2020133004A (ja) | 2019-02-22 | 2020-08-31 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基材を処理するための基材処理装置および方法 |
KR20200108243A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | SiOC 층을 포함한 구조체 및 이의 형성 방법 |
KR20200108242A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체 |
US11742198B2 (en) | 2019-03-08 | 2023-08-29 | Asm Ip Holding B.V. | Structure including SiOCN layer and method of forming same |
JP2020167398A (ja) | 2019-03-28 | 2020-10-08 | エーエスエム・アイピー・ホールディング・ベー・フェー | ドアオープナーおよびドアオープナーが提供される基材処理装置 |
KR20200116855A (ko) | 2019-04-01 | 2020-10-13 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자를 제조하는 방법 |
US11447864B2 (en) | 2019-04-19 | 2022-09-20 | Asm Ip Holding B.V. | Layer forming method and apparatus |
KR20200125453A (ko) | 2019-04-24 | 2020-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 기상 반응기 시스템 및 이를 사용하는 방법 |
KR20200130121A (ko) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 딥 튜브가 있는 화학물질 공급원 용기 |
KR20200130118A (ko) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 비정질 탄소 중합체 막을 개질하는 방법 |
KR20200130652A (ko) | 2019-05-10 | 2020-11-19 | 에이에스엠 아이피 홀딩 비.브이. | 표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조 |
JP2020188254A (ja) | 2019-05-16 | 2020-11-19 | エーエスエム アイピー ホールディング ビー.ブイ. | ウェハボートハンドリング装置、縦型バッチ炉および方法 |
JP2020188255A (ja) | 2019-05-16 | 2020-11-19 | エーエスエム アイピー ホールディング ビー.ブイ. | ウェハボートハンドリング装置、縦型バッチ炉および方法 |
USD947913S1 (en) | 2019-05-17 | 2022-04-05 | Asm Ip Holding B.V. | Susceptor shaft |
USD975665S1 (en) | 2019-05-17 | 2023-01-17 | Asm Ip Holding B.V. | Susceptor shaft |
USD935572S1 (en) | 2019-05-24 | 2021-11-09 | Asm Ip Holding B.V. | Gas channel plate |
USD922229S1 (en) | 2019-06-05 | 2021-06-15 | Asm Ip Holding B.V. | Device for controlling a temperature of a gas supply unit |
KR20200141002A (ko) | 2019-06-06 | 2020-12-17 | 에이에스엠 아이피 홀딩 비.브이. | 배기 가스 분석을 포함한 기상 반응기 시스템을 사용하는 방법 |
KR20200143254A (ko) | 2019-06-11 | 2020-12-23 | 에이에스엠 아이피 홀딩 비.브이. | 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조 |
USD944946S1 (en) | 2019-06-14 | 2022-03-01 | Asm Ip Holding B.V. | Shower plate |
USD931978S1 (en) | 2019-06-27 | 2021-09-28 | Asm Ip Holding B.V. | Showerhead vacuum transport |
KR20210005515A (ko) | 2019-07-03 | 2021-01-14 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법 |
JP7499079B2 (ja) | 2019-07-09 | 2024-06-13 | エーエスエム・アイピー・ホールディング・ベー・フェー | 同軸導波管を用いたプラズマ装置、基板処理方法 |
CN112216646A (zh) | 2019-07-10 | 2021-01-12 | Asm Ip私人控股有限公司 | 基板支撑组件及包括其的基板处理装置 |
KR20210010307A (ko) | 2019-07-16 | 2021-01-27 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
KR20210010820A (ko) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 게르마늄 구조를 형성하는 방법 |
KR20210010816A (ko) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 라디칼 보조 점화 플라즈마 시스템 및 방법 |
US11643724B2 (en) | 2019-07-18 | 2023-05-09 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
CN112242296A (zh) | 2019-07-19 | 2021-01-19 | Asm Ip私人控股有限公司 | 形成拓扑受控的无定形碳聚合物膜的方法 |
TW202113936A (zh) | 2019-07-29 | 2021-04-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於利用n型摻雜物及/或替代摻雜物選擇性沉積以達成高摻雜物併入之方法 |
CN112309899A (zh) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112309900A (zh) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | 基板处理设备 |
US11227782B2 (en) | 2019-07-31 | 2022-01-18 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
CN112323048B (zh) | 2019-08-05 | 2024-02-09 | Asm Ip私人控股有限公司 | 用于化学源容器的液位传感器 |
USD965044S1 (en) | 2019-08-19 | 2022-09-27 | Asm Ip Holding B.V. | Susceptor shaft |
USD965524S1 (en) | 2019-08-19 | 2022-10-04 | Asm Ip Holding B.V. | Susceptor support |
JP2021031769A (ja) | 2019-08-21 | 2021-03-01 | エーエスエム アイピー ホールディング ビー.ブイ. | 成膜原料混合ガス生成装置及び成膜装置 |
USD979506S1 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Insulator |
USD940837S1 (en) | 2019-08-22 | 2022-01-11 | Asm Ip Holding B.V. | Electrode |
KR20210024423A (ko) | 2019-08-22 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 홀을 구비한 구조체를 형성하기 위한 방법 |
USD949319S1 (en) | 2019-08-22 | 2022-04-19 | Asm Ip Holding B.V. | Exhaust duct |
USD930782S1 (en) | 2019-08-22 | 2021-09-14 | Asm Ip Holding B.V. | Gas distributor |
KR20210024420A (ko) | 2019-08-23 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 비스(디에틸아미노)실란을 사용하여 peald에 의해 개선된 품질을 갖는 실리콘 산화물 막을 증착하기 위한 방법 |
US11286558B2 (en) | 2019-08-23 | 2022-03-29 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
KR20210029090A (ko) | 2019-09-04 | 2021-03-15 | 에이에스엠 아이피 홀딩 비.브이. | 희생 캡핑 층을 이용한 선택적 증착 방법 |
KR20210029663A (ko) | 2019-09-05 | 2021-03-16 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
CN112593212B (zh) | 2019-10-02 | 2023-12-22 | Asm Ip私人控股有限公司 | 通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法 |
CN112635282A (zh) | 2019-10-08 | 2021-04-09 | Asm Ip私人控股有限公司 | 具有连接板的基板处理装置、基板处理方法 |
KR20210042810A (ko) | 2019-10-08 | 2021-04-20 | 에이에스엠 아이피 홀딩 비.브이. | 활성 종을 이용하기 위한 가스 분배 어셈블리를 포함한 반응기 시스템 및 이를 사용하는 방법 |
KR20210043460A (ko) | 2019-10-10 | 2021-04-21 | 에이에스엠 아이피 홀딩 비.브이. | 포토레지스트 하부층을 형성하기 위한 방법 및 이를 포함한 구조체 |
US12009241B2 (en) | 2019-10-14 | 2024-06-11 | Asm Ip Holding B.V. | Vertical batch furnace assembly with detector to detect cassette |
TWI834919B (zh) | 2019-10-16 | 2024-03-11 | 荷蘭商Asm Ip私人控股有限公司 | 氧化矽之拓撲選擇性膜形成之方法 |
US11637014B2 (en) | 2019-10-17 | 2023-04-25 | Asm Ip Holding B.V. | Methods for selective deposition of doped semiconductor material |
KR20210047808A (ko) | 2019-10-21 | 2021-04-30 | 에이에스엠 아이피 홀딩 비.브이. | 막을 선택적으로 에칭하기 위한 장치 및 방법 |
KR20210050453A (ko) | 2019-10-25 | 2021-05-07 | 에이에스엠 아이피 홀딩 비.브이. | 기판 표면 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조 |
US11646205B2 (en) | 2019-10-29 | 2023-05-09 | Asm Ip Holding B.V. | Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same |
KR20210054983A (ko) | 2019-11-05 | 2021-05-14 | 에이에스엠 아이피 홀딩 비.브이. | 도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템 |
US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
KR20210062561A (ko) | 2019-11-20 | 2021-05-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템 |
US11450529B2 (en) | 2019-11-26 | 2022-09-20 | Asm Ip Holding B.V. | Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface |
CN112951697A (zh) | 2019-11-26 | 2021-06-11 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112885693A (zh) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112885692A (zh) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | 基板处理设备 |
JP2021090042A (ja) | 2019-12-02 | 2021-06-10 | エーエスエム アイピー ホールディング ビー.ブイ. | 基板処理装置、基板処理方法 |
KR20210070898A (ko) | 2019-12-04 | 2021-06-15 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US11885013B2 (en) | 2019-12-17 | 2024-01-30 | Asm Ip Holding B.V. | Method of forming vanadium nitride layer and structure including the vanadium nitride layer |
KR20210080214A (ko) | 2019-12-19 | 2021-06-30 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조 |
TW202140135A (zh) | 2020-01-06 | 2021-11-01 | 荷蘭商Asm Ip私人控股有限公司 | 氣體供應總成以及閥板總成 |
US11993847B2 (en) | 2020-01-08 | 2024-05-28 | Asm Ip Holding B.V. | Injector |
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012132995A1 (ja) * | 2011-03-25 | 2012-10-04 | 三洋電機株式会社 | 光電変換素子の製造方法 |
JP2013135155A (ja) * | 2011-12-27 | 2013-07-08 | Sharp Corp | 太陽電池の製造方法 |
US20130175648A1 (en) * | 2012-01-10 | 2013-07-11 | Hyun-Jong Kim | Photovoltaic device |
US20130247965A1 (en) * | 2012-03-23 | 2013-09-26 | Richard M. Swanson | Solar cell having an emitter region with wide bandgap semiconductor material |
JP2014022428A (ja) * | 2012-07-13 | 2014-02-03 | Sharp Corp | 太陽電池および太陽電池モジュール |
JP2014045187A (ja) * | 2012-08-28 | 2014-03-13 | Lg Electronics Inc | 太陽電池の製造方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1634323A4 (en) * | 2003-06-13 | 2008-06-04 | Univ North Carolina State | COMPLEX OXIDES FOR USE IN SEMICONDUCTOR DEVICES AND ASSOCIATED METHODS |
US8916768B2 (en) | 2005-04-14 | 2014-12-23 | Rec Solar Pte. Ltd. | Surface passivation of silicon based wafers |
US8283559B2 (en) | 2009-04-09 | 2012-10-09 | Silevo, Inc. | Silicon-based dielectric stack passivation of Si-epitaxial thin-film solar cells |
KR20110062598A (ko) | 2009-12-03 | 2011-06-10 | 삼성전자주식회사 | 적층막 제조방법, 이를 이용한 태양전지의 제조방법 |
GB201011729D0 (en) * | 2010-07-13 | 2010-08-25 | Pilkington Group Ltd | Transparent front electrode for a photovoltaic device |
TWI495120B (zh) * | 2011-02-09 | 2015-08-01 | Sino American Silicon Prod Inc | 光電元件及其製造方法 |
TWI463682B (zh) * | 2011-03-02 | 2014-12-01 | Nat Univ Tsing Hua | 異質接面太陽能電池 |
KR20120129272A (ko) * | 2011-05-19 | 2012-11-28 | 삼성디스플레이 주식회사 | 태양 전지 및 이의 제조방법 |
US9842949B2 (en) * | 2011-08-09 | 2017-12-12 | Ob Realty, Llc | High-efficiency solar photovoltaic cells and modules using thin crystalline semiconductor absorbers |
KR20130050721A (ko) | 2011-11-08 | 2013-05-16 | 삼성에스디아이 주식회사 | 태양 전지 |
CN103858239A (zh) * | 2011-11-16 | 2014-06-11 | 天合光能发展有限公司 | 全背接触太阳能电池和制造方法 |
TWI452714B (zh) * | 2012-01-20 | 2014-09-11 | Univ Nat Taiwan | 太陽能電池及其製造方法 |
US20130298973A1 (en) * | 2012-05-14 | 2013-11-14 | Silevo, Inc. | Tunneling-junction solar cell with shallow counter doping layer in the substrate |
DE102012016298A1 (de) * | 2012-08-16 | 2014-05-15 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Halbleiterbauelement mit einer Passivierungsschicht aus hydriertem Aluminiumnitrid sowie Verfahren zur Oberflächenpassivierung von Halbleiterbauelementen |
-
2014
- 2014-06-27 US US14/317,686 patent/US9825191B2/en active Active
-
2015
- 2015-06-25 CN CN201580021016.3A patent/CN106663700A/zh active Pending
- 2015-06-25 SG SG11201610601VA patent/SG11201610601VA/en unknown
- 2015-06-25 EP EP15812315.8A patent/EP3161873A4/en not_active Withdrawn
- 2015-06-25 WO PCT/US2015/037820 patent/WO2015200716A1/en active Application Filing
- 2015-06-25 JP JP2016559970A patent/JP2017526155A/ja active Pending
- 2015-06-25 AU AU2015279726A patent/AU2015279726A1/en not_active Abandoned
- 2015-06-25 KR KR1020177002109A patent/KR20170023139A/ko unknown
- 2015-06-25 MX MX2016013204A patent/MX2016013204A/es unknown
- 2015-06-29 TW TW104120963A patent/TW201614854A/zh unknown
-
2016
- 2016-10-10 PH PH12016502014A patent/PH12016502014A1/en unknown
- 2016-12-23 CL CL2016003322A patent/CL2016003322A1/es unknown
-
2017
- 2017-10-13 US US15/783,276 patent/US20180040746A1/en not_active Abandoned
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012132995A1 (ja) * | 2011-03-25 | 2012-10-04 | 三洋電機株式会社 | 光電変換素子の製造方法 |
JP2013135155A (ja) * | 2011-12-27 | 2013-07-08 | Sharp Corp | 太陽電池の製造方法 |
US20130175648A1 (en) * | 2012-01-10 | 2013-07-11 | Hyun-Jong Kim | Photovoltaic device |
US20130247965A1 (en) * | 2012-03-23 | 2013-09-26 | Richard M. Swanson | Solar cell having an emitter region with wide bandgap semiconductor material |
JP2014022428A (ja) * | 2012-07-13 | 2014-02-03 | Sharp Corp | 太陽電池および太陽電池モジュール |
JP2014045187A (ja) * | 2012-08-28 | 2014-03-13 | Lg Electronics Inc | 太陽電池の製造方法 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019110192A (ja) * | 2017-12-18 | 2019-07-04 | 国立研究開発法人産業技術総合研究所 | 太陽電池 |
JP7148694B1 (ja) | 2021-08-26 | 2022-10-05 | 上海晶科緑能企業管理有限公司 | 太陽電池およびその製造方法、光起電力モジュール |
JP2023033253A (ja) * | 2021-08-26 | 2023-03-09 | 上海晶科緑能企業管理有限公司 | 太陽電池およびその製造方法、光起電力モジュール |
JP2023033029A (ja) * | 2021-08-26 | 2023-03-09 | 上海晶科緑能企業管理有限公司 | 太陽電池およびその製造方法、光起電力モジュール |
JP7284862B2 (ja) | 2021-08-26 | 2023-05-31 | 上海晶科緑能企業管理有限公司 | 太陽電池およびその製造方法、光起電力モジュール |
US12009446B2 (en) | 2021-08-26 | 2024-06-11 | Shanghai Jinko Green Energy Enterprise Management Co., Ltd. | Solar cell, method for producing same and solar cell module |
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US20180040746A1 (en) | 2018-02-08 |
MX2016013204A (es) | 2017-05-01 |
EP3161873A1 (en) | 2017-05-03 |
AU2015279726A1 (en) | 2016-10-27 |
US20150380574A1 (en) | 2015-12-31 |
EP3161873A4 (en) | 2017-05-17 |
KR20170023139A (ko) | 2017-03-02 |
WO2015200716A1 (en) | 2015-12-30 |
CN106663700A (zh) | 2017-05-10 |
CL2016003322A1 (es) | 2017-11-10 |
PH12016502014A1 (en) | 2017-02-06 |
US9825191B2 (en) | 2017-11-21 |
TW201614854A (en) | 2016-04-16 |
SG11201610601VA (en) | 2017-01-27 |
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