JP6447927B2 - 太陽電池 - Google Patents
太陽電池 Download PDFInfo
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- JP6447927B2 JP6447927B2 JP2015559928A JP2015559928A JP6447927B2 JP 6447927 B2 JP6447927 B2 JP 6447927B2 JP 2015559928 A JP2015559928 A JP 2015559928A JP 2015559928 A JP2015559928 A JP 2015559928A JP 6447927 B2 JP6447927 B2 JP 6447927B2
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- 239000004065 semiconductor Substances 0.000 claims description 189
- 239000000758 substrate Substances 0.000 claims description 43
- 238000000034 method Methods 0.000 claims description 21
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 238000005530 etching Methods 0.000 claims description 9
- 239000010410 layer Substances 0.000 description 200
- 238000000926 separation method Methods 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000000969 carrier Substances 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 239000010953 base metal Substances 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT® solar cells; solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Description
10n…半導体基板
12…裏面
20n…第1半導体層
22i…i型非晶質半導体層
25n…n型非晶質半導体層
27…第1半導体層の端部
30p…第2半導体層
32i…i型非晶質半導体層
35p…p型非晶質半導体層
37…第2半導体層の端部
40…絶縁層
40a…絶縁層の傾斜面
41…エッチングペースト
41a…端部
50n…第1電極
50p…第2電極
52…透明電極層
52n…第1透明電極層
52p…第2透明電極層
55n…第1収集電極
55p…第2収集電極
60…分離溝
70n,70p…接続電極
R…境界領域
Rn…第1導電型領域
Rp…第2導電型領域
Claims (4)
- 受光面と裏面とを有する第1導電型または第2導電型の半導体基板と、
前記裏面上に形成される第1導電型を有する第1半導体層と、
前記裏面上に形成される第2導電型を有する第2半導体層と、
前記第1半導体層と電気的に接続された第1電極と、
前記第2半導体層と電気的に接続された第2電極と、
前記第1半導体層が設けられる第1導電型領域と前記第2半導体層が設けられる第2導電型領域の境界領域に設けられる絶縁層とを備える太陽電池であって、
前記絶縁層の前記第2導電型領域側の側面が、前記第2導電型領域に近づくにつれて厚みが薄くなるように傾斜した傾斜面を有しており、厚み方向に垂直でかつ前記第2導電型領域に向かう方向における前記傾斜面の幅が、前記傾斜面が形成されていない部分における前記絶縁層の厚みの100〜200倍の範囲内であり、
前記境界領域において、前記絶縁層は、前記第1半導体層の上に設けられており、前記絶縁層の上に前記第2半導体層が設けられている、太陽電池。 - 前記第1電極が、第1透明電極層と、前記第1透明電極層の上に形成される第1収集電極層とを有し、前記第2電極が、第2透明電極層と、前記第2透明電極層の上に形成される第2収集電極層とを有する、請求項1に記載の太陽電池。
- 前記境界領域において、前記第2透明電極層は、前記第2半導体層の上に設けられている、請求項2に記載の太陽電池。
- 太陽電池セルの製造方法であって、
半導体基板の裏面上に第1導電型を有する第1半導体層を形成する第1工程と、
前記第1半導体層の上に絶縁層を形成する第2工程と、
前記絶縁層の上にエッチングペーストを塗布し、前記絶縁層の一部を除去して前記第1半導体層の一部を露出させるとともに、前記絶縁層にその厚みが薄くなるように傾斜した傾斜面を形成する第3工程と、
前記第1半導体層の前記第3工程で露出した部分を除去して前記半導体基板の一部を露出させる第4工程と、
前記半導体基板の前記第4工程で露出した部分および前記絶縁層の前記傾斜面の上に、前記第1導電型とは異なる第2導電型を有する第2半導体層を形成する第5工程と、
前記半導体基板の前記第4工程で露出した部分および前記絶縁層の前記傾斜面の上であって、前記第2半導体層の上に、該第2半導体層と電気的に接続される第2電極を形成する工程と、を備える、太陽電池セルの製造方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014014603 | 2014-01-29 | ||
JP2014014603 | 2014-01-29 | ||
PCT/JP2015/052006 WO2015115360A1 (ja) | 2014-01-29 | 2015-01-26 | 太陽電池 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2015115360A1 JPWO2015115360A1 (ja) | 2017-03-23 |
JP6447927B2 true JP6447927B2 (ja) | 2019-01-09 |
Family
ID=53756934
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015559928A Expired - Fee Related JP6447927B2 (ja) | 2014-01-29 | 2015-01-26 | 太陽電池 |
Country Status (4)
Country | Link |
---|---|
US (1) | US10014420B2 (ja) |
JP (1) | JP6447927B2 (ja) |
DE (1) | DE112015000559T5 (ja) |
WO (1) | WO2015115360A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2021230227A1 (ja) * | 2020-05-13 | 2021-11-18 | 株式会社カネカ | 太陽電池および太陽電池製造方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003298078A (ja) * | 2002-03-29 | 2003-10-17 | Ebara Corp | 光起電力素子 |
JP5485060B2 (ja) | 2010-07-28 | 2014-05-07 | 三洋電機株式会社 | 太陽電池の製造方法 |
WO2012132655A1 (ja) * | 2011-03-25 | 2012-10-04 | 三洋電機株式会社 | 裏面接合型の光電変換素子及び裏面接合型の光電変換素子の製造方法 |
GB2491209B (en) * | 2011-05-27 | 2013-08-21 | Renewable Energy Corp Asa | Solar cell and method for producing same |
JP2013120863A (ja) * | 2011-12-08 | 2013-06-17 | Sharp Corp | 太陽電池の製造方法 |
JP6032911B2 (ja) * | 2012-03-23 | 2016-11-30 | シャープ株式会社 | 光電変換素子およびその製造方法 |
JP2015133341A (ja) * | 2012-04-27 | 2015-07-23 | パナソニック株式会社 | 裏面接合型太陽電池及びその製造方法 |
GB2503515A (en) * | 2012-06-29 | 2014-01-01 | Rec Cells Pte Ltd | A rear contact heterojunction solar cell |
-
2015
- 2015-01-26 WO PCT/JP2015/052006 patent/WO2015115360A1/ja active Application Filing
- 2015-01-26 JP JP2015559928A patent/JP6447927B2/ja not_active Expired - Fee Related
- 2015-01-26 DE DE112015000559.5T patent/DE112015000559T5/de not_active Withdrawn
-
2016
- 2016-07-27 US US15/220,394 patent/US10014420B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPWO2015115360A1 (ja) | 2017-03-23 |
US20160336464A1 (en) | 2016-11-17 |
US10014420B2 (en) | 2018-07-03 |
DE112015000559T5 (de) | 2016-12-15 |
WO2015115360A1 (ja) | 2015-08-06 |
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