JP5734447B2 - 光起電力装置の製造方法および光起電力装置 - Google Patents
光起電力装置の製造方法および光起電力装置 Download PDFInfo
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Description
図1−1は、本発明の実施の形態1にかかる光起電力装置である太陽電池の裏面構造を模式的に示す平面図である。図1−2は、本発明の実施の形態1にかかる光起電力装置である太陽電池の断面構造を模式的に示す図であり、図1−1の線分A−A’における要部断面図である。
図4は、本発明の実施の形態2にかかる光起電力装置である太陽電池の断面構造を模式的に示す要部断面図である。実施の形態2にかかる太陽電池を裏面側から見た構造パターンは図1−1と同様である。図4は、図1−2に対応する要部断面図である。実施の形態2にかかる太陽電池は、p型半導体接合領域5B以外の構成は実施の形態1にかかる太陽電池と同じ構成を有する。図4において、実施の形態1にかかる太陽電池と同じ部材については同じ符号を付すことで、詳細な説明を省略する。
1a 溝部
1b 凸部領域
1c 溝部
1d 第1溝部
1e 第2溝部
2 テクスチャー
3 パッシベーション膜
4 反射防止膜
5 p型半導体層
5A p型半導体接合領域
5B p型半導体接合領域
6 n型半導体層
6A n型半導体接合領域
7 透明導電膜
8 透明導電膜
9 p型電極
10 n型電極
101 保護膜
102 エッチングペースト
103 保護用レジスト
201 保護用レジスト
202 保護用レジスト
Claims (11)
- 第1導電型または第2導電型の結晶系半導体基板の一面側に凹部を形成して凹凸構造を形成する第1工程と、
前記凹凸構造の凹部内を含む前記結晶系半導体基板の一面側に第1導電型の半導体膜を形成する第2工程と、
前記第1導電型の半導体膜が形成された前記凹部内にエッチングペーストを塗布して、前記凹部内の第1導電型の半導体膜をエッチング除去して前記凹部の表面を露出させるとともに前記凹凸構造の凸部上に前記第1導電型の半導体膜を残して前記凸部上に前記第1導電型の半導体膜と前記結晶系半導体基板との第1半導体接合領域を形成する第3工程と、
前記エッチングペーストを除去する第4工程と、
前記露出した前記凹部内に第2導電型の半導体膜を形成して前記凹部内に前記第2導電型の半導体膜と前記結晶系半導体基板との第2半導体接合領域を形成する第5工程と、
を含むことを特徴とする光起電力装置の製造方法。 - 前記第5工程は、
前記凹部内を含む前記結晶系半導体基板の一面側に第2導電型の半導体膜を形成する工程と、
前記第2導電型の半導体膜が形成された前記凹部内に保護レジストを形成して、前記保護レジストをエッチングマスクに用いて前記凹部内に前記第2導電型の半導体膜を残すとともに前記凸部上の前記第2導電型の半導体膜をエッチング除去する工程と、
を有すること、
を特徴とする請求項1に記載の光起電力装置の製造方法。 - 前記第5工程の後に、
前記凸部上の前記第1導電型の半導体膜上に電極を形成する工程と、
前記凹部内の前記第2導電型の半導体膜上に電極を形成する工程と、
を有することを特徴とする請求項1または2に記載の光起電力装置の製造方法。 - 前記凹部の深さが5μm〜100μmの範囲であり、エッチングペーストの塗布厚が前記凹部の深さ以下であること、
を特徴とする請求項1〜3のいずれか1つに記載の光起電力装置の製造方法。 - 前記第1工程では、前記凹部として第1凹部の底面部における幅方向の内側に前記第1凹部よりも細幅の第2凹部を形成した2段凹部を形成し、
前記第2工程では、前記2段凹部内を含む前記結晶系半導体基板の一面側に第1導電型の半導体膜と第1透明導電膜とをこの順で形成し、
前記第3工程では、前記2段凹部内にエッチングペーストを塗布して、前記2段凹部内の前記第1導電型の半導体膜と前記第1透明導電膜とをエッチング除去して前記2段凹部の表面を露出させるとともに前記凸部上に前記第1導電型の半導体膜と前記第1透明導電膜とを残して前記凸部上に前記第1導電型の半導体膜と前記結晶系半導体基板との第1半導体接合領域を形成し、
前記第5工程では、
前記2段凹部内を含む前記結晶系半導体基板の一面側に第2導電型の半導体膜と第2透明導電膜を形成し、
前記第2凹部内に第1保護レジストを形成して、前記第1保護レジストをエッチングマスクに用いて前記第2凹部内に前記第2透明導電膜を残すとともに前記第1凹部内および前記凸部上の前記第2透明導電膜をエッチング除去し、
前記第2凹部内に第1保護レジストを残存させた状態で前記第1凹部内に第2保護レジストを形成して、前記第2保護レジストをエッチングマスクに用いて前記凸部上の前記第2導電型の半導体膜をエッチング除去するとともに前記第1凹部内および前記第2凹部内に前記第2導電型の半導体膜を残して前記凹部内に前記第2導電型の半導体膜と前記結晶系半導体基板との第2半導体接合領域を形成すること、
を特徴とする請求項1に記載の光起電力装置の製造方法。 - 前記第5工程の後に、
前記凸部上の前記第1透明導電膜上に電極を形成する工程と、
前記凹部内の前記第1透明導電膜上に電極を形成する工程と、
を有することを特徴とする請求項5に記載の光起電力装置の製造方法。 - 前記2段凹部の深さが5μm〜100μmの範囲であり、エッチングペーストの厚みが前記凹部の深さ以下であること、
を特徴とする請求項5または6に記載の光起電力装置の製造方法。 - 前記第1保護レジストの厚みが前記第2凹部の深さ以下であり、
前記第2保護レジストの厚みが前記第1凹部の深さ以下であること、
を特徴とする請求項5〜7のいずれか1つに記載の光起電力装置の製造方法。 - 前記凹部と前記凸部とが交互に且つ略同一方向に平行に延在するように前記凹部を形成すること、
を特徴とする請求項1〜8のいずれか1つに記載の光起電力装置の製造方法。 - 前記結晶系半導体基板の一面側に対するレーザー照射により前記凹部を形成すること、
を特徴とする請求項1〜9のいずれか1つに記載の光起電力装置の製造方法。 - 第1導電型または第2導電型の結晶系半導体基板の凸部と凹部を有する面に異なる種類の半導体接合が形成された光起電力装置であって、
前記凹部が、第1凹部の底面部における幅方向の内側に前記第1凹部よりも細幅の第2凹部が形成された2段凹部であり、
前記凸部上に第1導電型の半導体膜と第1透明導電膜とがこの順で積層されて前記第1導電型の半導体膜と前記結晶系半導体基板との第1半導体接合領域が形成され、
前記第1凹部内および前記第2凹部内に第2導電型の半導体膜が形成されて前記第2導電型の半導体膜と前記結晶系半導体基板との第2半導体接合領域が形成され、
前記第2凹部内に形成された前記第2導電型の半導体膜上に第2透明導電膜が形成され、
前記第1導電型の半導体膜および前記第1透明導電膜と、前記第2凹部内の前記第2透明導電膜とが電気的に絶縁されていること、
を特徴とする光起電力装置。
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