JP4632672B2 - 太陽電池の製造方法 - Google Patents
太陽電池の製造方法 Download PDFInfo
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- JP4632672B2 JP4632672B2 JP2004028288A JP2004028288A JP4632672B2 JP 4632672 B2 JP4632672 B2 JP 4632672B2 JP 2004028288 A JP2004028288 A JP 2004028288A JP 2004028288 A JP2004028288 A JP 2004028288A JP 4632672 B2 JP4632672 B2 JP 4632672B2
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- receiving surface
- silicon substrate
- diffusion layer
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- 238000004519 manufacturing process Methods 0.000 title claims description 37
- 239000012535 impurity Substances 0.000 claims description 143
- 239000000758 substrate Substances 0.000 claims description 116
- 238000009792 diffusion process Methods 0.000 claims description 109
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 103
- 229910052710 silicon Inorganic materials 0.000 claims description 103
- 239000010703 silicon Substances 0.000 claims description 103
- 239000000463 material Substances 0.000 claims description 47
- 238000000034 method Methods 0.000 claims description 30
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 12
- 239000011574 phosphorus Substances 0.000 claims description 12
- 229910052698 phosphorus Inorganic materials 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 10
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 7
- 229910052796 boron Inorganic materials 0.000 claims description 7
- 239000000356 contaminant Substances 0.000 claims description 7
- 229910021478 group 5 element Inorganic materials 0.000 claims description 4
- 230000002265 prevention Effects 0.000 description 18
- 238000002161 passivation Methods 0.000 description 15
- 230000001681 protective effect Effects 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 238000005247 gettering Methods 0.000 description 9
- 239000000969 carrier Substances 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 229910001385 heavy metal Inorganic materials 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- 238000007650 screen-printing Methods 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000007772 electrode material Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000010306 acid treatment Methods 0.000 description 1
- 239000003929 acidic solution Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000004857 zone melting Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Development (AREA)
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Description
シリコン基板の受光面ではない方の面にp型電極とn型電極の両者を有する太陽電池(所謂裏面接合型太陽電池)の製造方法について、図1に基づき説明する。
シリコン基板の受光面ではない方の面にp型電極とn型電極の両者を有する太陽電池の別の製造方法について、図2に基づき説明する。
シリコン基板の受光面ではない方の面にp型電極とn型電極の両者を有する太陽電池の別の製造方法について、図3に基づき説明する。
Claims (4)
- シリコン基板の受光面ではない方の面にp型電極とn型電極の両者を有する太陽電池の製造方法であって、
前記シリコン基板の受光面側と受光面ではない方の面側とに対して同時に不純物拡散層を形成するステップと、
前記シリコン基板の受光面側の表面に対して、前記受光面側に形成された不純物拡散層の深さよりも深くなる深さまでエッチングすることにより前記受光面側に形成された不純物拡散層を除去するステップとを含み、
前記不純物拡散層を形成するステップは、前記シリコン基板の受光面ではない方の面側に対して、不純物を含むペースト材を塗布するとともに、不純物を含むガスを導入し、前記受光面側に形成される不純物拡散層により、前記シリコン基板に含まれる汚染物質を同時にゲッタリングするものであり、
前記不純物拡散層を除去するステップは、前記シリコン基板の受光面側に対して同時にテクスチャ処理を実行するものであることを特徴とする太陽電池の製造方法。 - 前記シリコン基板の受光面でない方の面側に対して、p型電極とn型電極の両者を形成するステップを含むことを特徴とする、請求項1記載の太陽電池の製造方法。
- 前記受光面側の不純物拡散層は、不純物としてリンまたは他のV族元素が拡散したものであることを特徴とする、請求項1記載の太陽電池の製造方法。
- 前記受光面側の不純物拡散層は、不純物としてホウ素または他のIII族元素が拡散したものであることを特徴とする、請求項1記載の太陽電池の製造方法。
Priority Applications (1)
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JP2004028288A JP4632672B2 (ja) | 2004-02-04 | 2004-02-04 | 太陽電池の製造方法 |
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JP2004028288A JP4632672B2 (ja) | 2004-02-04 | 2004-02-04 | 太陽電池の製造方法 |
Publications (2)
Publication Number | Publication Date |
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JP2005223080A JP2005223080A (ja) | 2005-08-18 |
JP4632672B2 true JP4632672B2 (ja) | 2011-02-16 |
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JP2004028288A Expired - Fee Related JP4632672B2 (ja) | 2004-02-04 | 2004-02-04 | 太陽電池の製造方法 |
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Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5201789B2 (ja) * | 2005-11-14 | 2013-06-05 | シャープ株式会社 | 太陽電池およびその製造方法 |
DE102006041424A1 (de) * | 2006-09-04 | 2008-03-20 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur simultanen Dotierung und Oxidation von Halbleitersubstraten und dessen Verwendung |
DE102007036921A1 (de) * | 2007-02-28 | 2008-09-04 | Centrotherm Photovoltaics Technology Gmbh | Verfahren zur Herstellung von Siliziumsolarzellen |
JP5277485B2 (ja) * | 2007-12-13 | 2013-08-28 | シャープ株式会社 | 太陽電池の製造方法 |
KR101010286B1 (ko) | 2008-08-29 | 2011-01-24 | 엘지전자 주식회사 | 태양 전지의 제조 방법 |
JP5029921B2 (ja) * | 2009-01-19 | 2012-09-19 | シャープ株式会社 | 太陽電池セルの製造方法 |
JP5889163B2 (ja) * | 2012-11-02 | 2016-03-22 | 三菱電機株式会社 | 光起電力装置およびその製造方法、光起電力モジュール |
DE102013218351A1 (de) * | 2013-09-13 | 2015-03-19 | Robert Bosch Gmbh | Verfahren zur Herstellung einer Solarzelle |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55158679A (en) * | 1979-05-29 | 1980-12-10 | Agency Of Ind Science & Technol | Manufacture of solar cell |
JPH10144945A (ja) * | 1996-11-12 | 1998-05-29 | Toyota Motor Corp | 太陽電池素子及びその製造方法 |
JP2000353706A (ja) * | 1999-06-10 | 2000-12-19 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
JP2001007369A (ja) * | 1999-06-25 | 2001-01-12 | Sanyo Electric Co Ltd | 半導体素子の製造方法 |
JP2002164556A (ja) * | 2000-11-27 | 2002-06-07 | Kyocera Corp | 裏面電極型太陽電池素子 |
-
2004
- 2004-02-04 JP JP2004028288A patent/JP4632672B2/ja not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55158679A (en) * | 1979-05-29 | 1980-12-10 | Agency Of Ind Science & Technol | Manufacture of solar cell |
JPH10144945A (ja) * | 1996-11-12 | 1998-05-29 | Toyota Motor Corp | 太陽電池素子及びその製造方法 |
JP2000353706A (ja) * | 1999-06-10 | 2000-12-19 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
JP2001007369A (ja) * | 1999-06-25 | 2001-01-12 | Sanyo Electric Co Ltd | 半導体素子の製造方法 |
JP2002164556A (ja) * | 2000-11-27 | 2002-06-07 | Kyocera Corp | 裏面電極型太陽電池素子 |
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JP2005223080A (ja) | 2005-08-18 |
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