JP4425917B2 - 太陽電池セルおよびその製造方法 - Google Patents
太陽電池セルおよびその製造方法 Download PDFInfo
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- JP4425917B2 JP4425917B2 JP2006519668A JP2006519668A JP4425917B2 JP 4425917 B2 JP4425917 B2 JP 4425917B2 JP 2006519668 A JP2006519668 A JP 2006519668A JP 2006519668 A JP2006519668 A JP 2006519668A JP 4425917 B2 JP4425917 B2 JP 4425917B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 36
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 130
- 229910052782 aluminium Inorganic materials 0.000 claims description 130
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 130
- 229910052709 silver Inorganic materials 0.000 claims description 130
- 239000004332 silver Substances 0.000 claims description 130
- 239000000758 substrate Substances 0.000 claims description 79
- 238000006243 chemical reaction Methods 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 62
- 229910052710 silicon Inorganic materials 0.000 description 61
- 239000010703 silicon Substances 0.000 description 61
- 229910045601 alloy Inorganic materials 0.000 description 30
- 239000000956 alloy Substances 0.000 description 30
- 238000010304 firing Methods 0.000 description 18
- 230000015572 biosynthetic process Effects 0.000 description 16
- 238000009792 diffusion process Methods 0.000 description 16
- 238000007639 printing Methods 0.000 description 15
- 238000000034 method Methods 0.000 description 13
- 239000004065 semiconductor Substances 0.000 description 10
- 239000000839 emulsion Substances 0.000 description 9
- 230000007547 defect Effects 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 150000002739 metals Chemical class 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 238000007650 screen-printing Methods 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 230000002950 deficient Effects 0.000 description 4
- 238000010248 power generation Methods 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 235000011121 sodium hydroxide Nutrition 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000002003 electrode paste Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Description
11 シリコン基板
13 n型拡散層
13a n型拡散層
14 p+層
15 反射防止膜
17 アルミニウム電極
17a アルミニウムペースト層
19 裏面銀電極
19a 銀ペースト層
21 表面銀電極
21a 銀ペースト層
23 合金部
25 メッシュ
27 乳剤
29 マスク枠
31 アルミニウム電極と裏面銀電極との重なり領域
33 アルミニウム電極と裏面銀電極との重なり領域およびその周辺領域
図1−1〜図1−3は、本発明の実施の形態1にかかる太陽電池セルの概略構成を示す図であり、図1−1は実施の形態1にかかる太陽電池セルの概略構成を示す断面図である。また、図1−2は実施の形態1にかかる太陽電池セルの表面側(受光面側)の概略構成を示す平面図であり、図1−3は実施の形態1にかかる太陽電池セルの裏面側(受光面に相対する面側)の概略構成を示す平面図である。なお、図1−1は図1−3の線分A−Aにおける断面図である。
実施の形態2においては、本発明にかかる太陽電池セルの他の形態について説明する。上述した実施の形態1においては、アルミニウム電極17が一様に同じ厚みを有する場合について説明したが、本発明においてはアルミニウム電極17は必ずしも一様に同じ厚みを有する必要はない。
Claims (4)
- 光電変換機能を有する基板と、
前記基板の一面側に設けられた第一電極と、
前記基板の他面側に設けられた第二電極と、
前記基板の他面側に、前記基板の面内方向において外縁部が前記第二電極と重なって設けられ、前記第二電極から出力を取り出すための第三電極と、
を備えた太陽電池セルであって、
前記第二電極の厚みが前記第三電極の厚みよりも大であり、且つ前記第二電極の厚みと前記第三電極の厚みとの差が10μm以上30μm以下であり、さらに前記第二電極において、前記第三電極と重なる部分の厚みのみが前記第三電極の厚みよりも大であること、
を特徴とする太陽電池セル。 - 前記第二電極が、アルミニウム電極であり、
前記第三電極が、銀電極であること、
を特徴とする請求項1に記載の太陽電池セル。 - 光電変換機能を有する基板の一面側に第一電極を形成する第一電極形成工程と、
前記基板の他面側に第二電極を形成する第二電極工程と、
前記基板の他面側に、前記基板の面内方向において外縁部が前記第二電極と重なるように前記第二電極から出力を取り出すための第三電極を形成する第三電極工程と、
を含む太陽電池セルの製造方法であって、
前記第二電極の厚みを前記第三電極の厚みよりも大とし、且つ前記第二電極の厚みと前記第三電極の厚みとの差を10μm以上30μm以下とし、さらに前記第二電極における該第二電極と前記第三電極とが重なる重なり部の厚みのみを前記第三電極の厚みよりも大きくすること
を特徴とする太陽電池セルの製造方法。 - 前記第二電極が、アルミニウム電極であり、
前記第三電極が、銀電極であること、
を特徴とする請求項3に記載の太陽電池セルの製造方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2005/021783 WO2007060744A1 (ja) | 2005-11-28 | 2005-11-28 | 太陽電池セルおよびその製造方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009206182A Division JP2009290235A (ja) | 2009-09-07 | 2009-09-07 | 太陽電池セルおよびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2007060744A1 JPWO2007060744A1 (ja) | 2009-05-07 |
JP4425917B2 true JP4425917B2 (ja) | 2010-03-03 |
Family
ID=38066986
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006519668A Active JP4425917B2 (ja) | 2005-11-28 | 2005-11-28 | 太陽電池セルおよびその製造方法 |
Country Status (7)
Country | Link |
---|---|
US (2) | US7910823B2 (ja) |
EP (1) | EP1887632B1 (ja) |
JP (1) | JP4425917B2 (ja) |
CN (1) | CN100490183C (ja) |
DE (1) | DE602005026059D1 (ja) |
ES (1) | ES2357665T3 (ja) |
WO (1) | WO2007060744A1 (ja) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2149155B9 (en) | 2007-05-07 | 2012-04-25 | Georgia Tech Research Corporation | Formation of high quality back contact with screen-printed local back surface field |
NL1034513C2 (nl) * | 2007-10-12 | 2009-04-15 | Otb Groep B V | Werkwijze voor het vervaardigen van een photovoltaïsche cel en een photovoltaïsche cel verkregen met een dergelijke werkwijze. |
US20090286349A1 (en) * | 2008-05-13 | 2009-11-19 | Georgia Tech Research Corporation | Solar cell spin-on based process for simultaneous diffusion and passivation |
US8207444B2 (en) * | 2008-07-01 | 2012-06-26 | Sunpower Corporation | Front contact solar cell with formed electrically conducting layers on the front side and backside |
KR101135591B1 (ko) * | 2009-03-11 | 2012-04-19 | 엘지전자 주식회사 | 태양 전지 및 태양 전지 모듈 |
US7910393B2 (en) | 2009-06-17 | 2011-03-22 | Innovalight, Inc. | Methods for forming a dual-doped emitter on a silicon substrate with a sub-critical shear thinning nanoparticle fluid |
DE102009056308A1 (de) * | 2009-11-30 | 2011-06-01 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Metallisch kontaktiertes Substrat sowie Verfahren zu dessen Herstellung |
US8535971B2 (en) * | 2010-02-12 | 2013-09-17 | Heraeus Precious Metals North America Conshohocken Llc | Method for applying full back surface field and silver busbar to solar cell |
JP5349523B2 (ja) * | 2011-03-31 | 2013-11-20 | 三菱電機株式会社 | 太陽電池の製造方法 |
KR101714780B1 (ko) * | 2011-06-08 | 2017-03-09 | 엘지전자 주식회사 | 태양전지 모듈 |
JP2013165160A (ja) * | 2012-02-10 | 2013-08-22 | Shin Etsu Chem Co Ltd | 太陽電池の製造方法及び太陽電池 |
KR101349454B1 (ko) * | 2012-03-05 | 2014-01-10 | 엘지이노텍 주식회사 | 태양광 발전장치 |
KR20130117345A (ko) * | 2012-04-17 | 2013-10-25 | 헤레우스 프레셔스 메탈즈 노스 아메리카 콘쇼호켄 엘엘씨 | 태양 전지 접촉을 위한 전도성 후막 페이스트용 텔루륨 무기 반응 시스템 |
CN104428899B (zh) * | 2012-06-06 | 2017-10-03 | 日本麦可罗尼克斯股份有限公司 | 固态型二次电池的电极结构 |
US20150155401A1 (en) * | 2012-06-12 | 2015-06-04 | Heraeus Precious Metals North America Conshohocken Llc | Electroconductive paste with adhesion enhancer |
US9312406B2 (en) | 2012-12-19 | 2016-04-12 | Sunpower Corporation | Hybrid emitter all back contact solar cell |
DE102013111748A1 (de) * | 2013-10-24 | 2015-04-30 | Hanwha Q Cells Gmbh | Solarmodul und Solarmodulherstellungsverfahren |
CN105489664A (zh) * | 2015-12-03 | 2016-04-13 | 中国电子科技集团公司第十八研究所 | 太阳电池的制备方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5118362A (en) | 1990-09-24 | 1992-06-02 | Mobil Solar Energy Corporation | Electrical contacts and methods of manufacturing same |
EP0542961B1 (en) * | 1991-06-11 | 1998-04-01 | Ase Americas, Inc. | Improved solar cell and method of making same |
US5178685A (en) | 1991-06-11 | 1993-01-12 | Mobil Solar Energy Corporation | Method for forming solar cell contacts and interconnecting solar cells |
US5320684A (en) | 1992-05-27 | 1994-06-14 | Mobil Solar Energy Corporation | Solar cell and method of making same |
JP3349370B2 (ja) * | 1996-11-12 | 2002-11-25 | シャープ株式会社 | 太陽電池セル |
JPH10335267A (ja) | 1997-05-30 | 1998-12-18 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
JP3957461B2 (ja) | 2001-01-22 | 2007-08-15 | シャープ株式会社 | 太陽電池セルおよびその製造方法 |
JP2003273378A (ja) | 2002-03-15 | 2003-09-26 | Kyocera Corp | 太陽電池素子 |
JP2003273379A (ja) * | 2002-03-15 | 2003-09-26 | Kyocera Corp | 太陽電池素子 |
JP3968000B2 (ja) | 2002-11-26 | 2007-08-29 | 京セラ株式会社 | 太陽電池素子の形成方法 |
JP4401158B2 (ja) | 2003-12-16 | 2010-01-20 | シャープ株式会社 | 太陽電池の製造方法 |
US7494607B2 (en) * | 2005-04-14 | 2009-02-24 | E.I. Du Pont De Nemours And Company | Electroconductive thick film composition(s), electrode(s), and semiconductor device(s) formed therefrom |
-
2005
- 2005-11-28 ES ES05809119T patent/ES2357665T3/es active Active
- 2005-11-28 JP JP2006519668A patent/JP4425917B2/ja active Active
- 2005-11-28 EP EP05809119A patent/EP1887632B1/en not_active Not-in-force
- 2005-11-28 CN CNB2005800137728A patent/CN100490183C/zh active Active
- 2005-11-28 DE DE602005026059T patent/DE602005026059D1/de active Active
- 2005-11-28 WO PCT/JP2005/021783 patent/WO2007060744A1/ja active Application Filing
- 2005-11-28 US US11/597,108 patent/US7910823B2/en not_active Expired - Fee Related
-
2011
- 2011-02-09 US US13/023,910 patent/US8450602B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
ES2357665T3 (es) | 2011-04-28 |
CN101107719A (zh) | 2008-01-16 |
EP1887632A1 (en) | 2008-02-13 |
US20070256733A1 (en) | 2007-11-08 |
US20110126901A1 (en) | 2011-06-02 |
CN100490183C (zh) | 2009-05-20 |
US7910823B2 (en) | 2011-03-22 |
DE602005026059D1 (de) | 2011-03-03 |
JPWO2007060744A1 (ja) | 2009-05-07 |
EP1887632A4 (en) | 2010-01-20 |
EP1887632B1 (en) | 2011-01-19 |
US8450602B2 (en) | 2013-05-28 |
WO2007060744A1 (ja) | 2007-05-31 |
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