JP4176734B2 - トレンチmosfet - Google Patents
トレンチmosfet Download PDFInfo
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- JP4176734B2 JP4176734B2 JP2005112645A JP2005112645A JP4176734B2 JP 4176734 B2 JP4176734 B2 JP 4176734B2 JP 2005112645 A JP2005112645 A JP 2005112645A JP 2005112645 A JP2005112645 A JP 2005112645A JP 4176734 B2 JP4176734 B2 JP 4176734B2
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- 229910052751 metal Inorganic materials 0.000 claims description 70
- 239000002184 metal Substances 0.000 claims description 70
- 239000004065 semiconductor Substances 0.000 claims description 64
- 238000009792 diffusion process Methods 0.000 claims description 34
- 239000012535 impurity Substances 0.000 claims description 24
- 239000004020 conductor Substances 0.000 claims description 21
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 14
- 239000010410 layer Substances 0.000 description 370
- 230000015572 biosynthetic process Effects 0.000 description 12
- 238000000034 method Methods 0.000 description 11
- 230000002829 reductive effect Effects 0.000 description 11
- 230000002441 reversible effect Effects 0.000 description 9
- 239000000758 substrate Substances 0.000 description 8
- 230000008569 process Effects 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 5
- 230000008901 benefit Effects 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 description 2
- HEZMWWAKWCSUCB-PHDIDXHHSA-N (3R,4R)-3,4-dihydroxycyclohexa-1,5-diene-1-carboxylic acid Chemical compound O[C@@H]1C=CC(C(O)=O)=C[C@H]1O HEZMWWAKWCSUCB-PHDIDXHHSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 230000002401 inhibitory effect Effects 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910021339 platinum silicide Inorganic materials 0.000 description 2
- 238000010992 reflux Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000009191 jumping Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Description
Claims (4)
- トレンチゲート構造を有するゲート電極と、
前記ゲート電極を取り囲むように形成されたゲート絶縁膜と、
前記トレンチの上部において前記ゲート電極に前記ゲート絶縁膜を介して対向して形成されたn型拡散層と、
前記トレンチの前記上部より下の部位において前記ゲート電極に前記ゲート絶縁膜を介して対向して形成されたp型ベース層と、
前記トレンチの前記下の部位よりさらに下の部位において前記ゲート電極に前記ゲート絶縁膜を介して対向して位置するn型エピタキシャル層と、
前記トレンチの深さ方向と平行に前記トレンチから離間して前記n型拡散層および前記p型ベース層を貫通し前記n型エピタキシャル層に達するように形成された金属層と、
前記p型ベース層と前記金属層とに接触するように位置する前記p型ベース層より高不純物濃度のp型層とを具備し、
前記p型ベース層の最深部の深さが、前記トレンチの深さおよび前記金属層の深さより深いこと
を特徴とするトレンチMOSFET。 - トレンチ(第1のトレンチ)ゲート構造を有するゲート電極と、
前記ゲート電極を取り囲むように形成されたゲート絶縁膜と、
前記第1のトレンチの上部において前記ゲート電極に前記ゲート絶縁膜を介して対向して形成されたn型拡散層と、
前記第1のトレンチの前記上部より下の部位において前記ゲート電極に前記ゲート絶縁膜を介して対向して形成されたp型ベース層と、
前記第1のトレンチに前記p型ベース層を介して対向して位置し、側壁面に絶縁膜を、底面にp型半導体層をそれぞれ有し、かつ導電体層が埋め込み形成されている第2のトレンチと、
前記第1のトレンチの前記下の部位よりさらに下の部位において前記ゲート電極に前記ゲート絶縁膜を介して対向して位置し、かつ前記第2のトレンチの前記p型ベース層が位置する側とは反対側にも位置するn型エピタキシャル層と、
前記第2のトレンチの前記p型ベース層が位置する側とは反対側の部位の前記n型エピタキシャル層の上面に接触形成された金属層と
を具備することを特徴とするトレンチMOSFET。 - 前記第2のトレンチの前記導電体層が、p型多結晶シリコンであることを特徴とする請求項2記載のトレンチMOSFET。
- トレンチゲート構造を有するゲート電極と、
前記ゲート電極を取り囲むように形成されたゲート絶縁膜と、
前記トレンチの上部において前記ゲート電極に前記ゲート絶縁膜を介して対向して形成されたn型拡散層と、
前記トレンチの前記上部より下の部位において前記ゲート電極に前記ゲート絶縁膜を介して対向して形成されたp型ベース層と、
前記トレンチに前記p型ベース層を介して対向しかつ該トレンチより深くまで達して形成されたp型半導体層と、
前記トレンチの前記下の部位よりさらに下の部位において前記ゲート電極に前記ゲート絶縁膜を介して対向して位置し、かつ前記p型半導体層の前記p型ベース層が位置する側とは反対側にも位置するn型エピタキシャル層と、
前記p型半導体層の前記p型ベース層が位置する側とは反対側の部位の前記n型エピタキシャル層の上面に接触形成された金属層と
を具備することを特徴とするトレンチMOSFET。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005112645A JP4176734B2 (ja) | 2004-05-14 | 2005-04-08 | トレンチmosfet |
US11/127,224 US7230297B2 (en) | 2004-05-14 | 2005-05-12 | Trench-gated MOSFET including schottky diode therein |
US11/740,045 US7564097B2 (en) | 2004-05-14 | 2007-04-25 | Trench-gated MOSFET including schottky diode therein |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004145265 | 2004-05-14 | ||
JP2005112645A JP4176734B2 (ja) | 2004-05-14 | 2005-04-08 | トレンチmosfet |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005354037A JP2005354037A (ja) | 2005-12-22 |
JP4176734B2 true JP4176734B2 (ja) | 2008-11-05 |
Family
ID=35374390
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005112645A Expired - Fee Related JP4176734B2 (ja) | 2004-05-14 | 2005-04-08 | トレンチmosfet |
Country Status (2)
Country | Link |
---|---|
US (2) | US7230297B2 (ja) |
JP (1) | JP4176734B2 (ja) |
Families Citing this family (35)
Publication number | Priority date | Publication date | Assignee | Title |
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JP4913336B2 (ja) * | 2004-09-28 | 2012-04-11 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US8362547B2 (en) | 2005-02-11 | 2013-01-29 | Alpha & Omega Semiconductor Limited | MOS device with Schottky barrier controlling layer |
US7948029B2 (en) | 2005-02-11 | 2011-05-24 | Alpha And Omega Semiconductor Incorporated | MOS device with varying trench depth |
US7285822B2 (en) | 2005-02-11 | 2007-10-23 | Alpha & Omega Semiconductor, Inc. | Power MOS device |
US8093651B2 (en) | 2005-02-11 | 2012-01-10 | Alpha & Omega Semiconductor Limited | MOS device with integrated schottky diode in active region contact trench |
US8283723B2 (en) * | 2005-02-11 | 2012-10-09 | Alpha & Omega Semiconductor Limited | MOS device with low injection diode |
US7671439B2 (en) * | 2005-02-11 | 2010-03-02 | Alpha & Omega Semiconductor, Ltd. | Junction barrier Schottky (JBS) with floating islands |
US7446374B2 (en) * | 2006-03-24 | 2008-11-04 | Fairchild Semiconductor Corporation | High density trench FET with integrated Schottky diode and method of manufacture |
JP4412344B2 (ja) * | 2007-04-03 | 2010-02-10 | 株式会社デンソー | 半導体装置およびその製造方法 |
JP4564514B2 (ja) * | 2007-05-18 | 2010-10-20 | 株式会社東芝 | 半導体装置 |
JP4492735B2 (ja) | 2007-06-20 | 2010-06-30 | 株式会社デンソー | 半導体装置及び半導体装置の製造方法 |
JP5083885B2 (ja) * | 2007-11-20 | 2012-11-28 | 日本インター株式会社 | Jbsおよびmosfet |
JP2010045123A (ja) * | 2008-08-11 | 2010-02-25 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
JP5612256B2 (ja) | 2008-10-16 | 2014-10-22 | 株式会社東芝 | 半導体装置 |
US8969950B2 (en) * | 2008-12-23 | 2015-03-03 | Alpha & Omega Semiconductor, Inc. | Integrated MOSFET-Schottky diode device with reduced source and body Kelvin contact impedance and breakdown voltage |
JP2010238738A (ja) * | 2009-03-30 | 2010-10-21 | Toshiba Corp | 半導体装置および半導体装置の製造方法 |
US7800170B1 (en) * | 2009-07-31 | 2010-09-21 | Alpha & Omega Semiconductor, Inc. | Power MOSFET device with tungsten spacer in contact hole and method |
US8222678B2 (en) * | 2009-08-17 | 2012-07-17 | Excelliance Mos Corporation | Semiconductor structure |
US8368140B2 (en) * | 2009-12-03 | 2013-02-05 | Diodes Incorporated | Trench MOS device with Schottky diode and method for manufacturing same |
US7994001B1 (en) * | 2010-05-11 | 2011-08-09 | Great Power Semiconductor Corp. | Trenched power semiconductor structure with schottky diode and fabrication method thereof |
JP5616720B2 (ja) * | 2010-08-30 | 2014-10-29 | セイコーインスツル株式会社 | 半導体装置およびその製造方法 |
JP5872766B2 (ja) * | 2010-12-10 | 2016-03-01 | ローム株式会社 | 半導体装置および半導体パッケージ |
TWI415173B (zh) * | 2011-05-19 | 2013-11-11 | Anpec Electronics Corp | 低米勒電容之超級接面功率電晶體製造方法 |
JP6253885B2 (ja) * | 2013-01-07 | 2017-12-27 | ルネサスエレクトロニクス株式会社 | 縦型パワーmosfet |
JP5939448B2 (ja) * | 2013-04-30 | 2016-06-22 | 日産自動車株式会社 | 半導体装置及びその製造方法 |
US9741851B2 (en) * | 2013-05-13 | 2017-08-22 | Alpha And Omega Semiconductor Incorporated | Trench junction barrier controlled Schottky |
JP6104743B2 (ja) * | 2013-07-18 | 2017-03-29 | 株式会社豊田中央研究所 | ショットキーダイオードを内蔵するfet |
JP6135364B2 (ja) * | 2013-07-26 | 2017-05-31 | 住友電気工業株式会社 | 炭化珪素半導体装置およびその製造方法 |
JP2015056492A (ja) | 2013-09-11 | 2015-03-23 | 株式会社東芝 | 半導体装置 |
KR102046663B1 (ko) * | 2013-11-04 | 2019-11-20 | 매그나칩 반도체 유한회사 | 반도체 소자 및 그 제조방법 |
JP6222706B2 (ja) * | 2015-07-23 | 2017-11-01 | ローム株式会社 | 半導体装置および半導体パッケージ |
US9935188B2 (en) | 2016-07-22 | 2018-04-03 | Pakal Technologies Llc | Insulated gate turn-off device with turn-off Schottky-Barrier MOSFET |
JP7059556B2 (ja) | 2017-10-05 | 2022-04-26 | 富士電機株式会社 | 半導体装置 |
US10777689B1 (en) | 2019-10-18 | 2020-09-15 | Hong Kong Applied Science and Technology Research Institute Company, Limited | Silicon-carbide shielded-MOSFET embedded with a trench Schottky diode and heterojunction gate |
WO2022096088A1 (en) | 2020-11-04 | 2022-05-12 | Hitachi Energy Switzerland Ag | Power field-effect transistor and manufacturing method |
Family Cites Families (9)
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JPS61247156A (ja) * | 1985-04-25 | 1986-11-04 | Canon Inc | フアクシミリ装置 |
JPH0693512B2 (ja) | 1986-06-17 | 1994-11-16 | 日産自動車株式会社 | 縦形mosfet |
US6049108A (en) * | 1995-06-02 | 2000-04-11 | Siliconix Incorporated | Trench-gated MOSFET with bidirectional voltage clamping |
JPH09102602A (ja) | 1995-10-05 | 1997-04-15 | Nippon Telegr & Teleph Corp <Ntt> | Mosfet |
JP3938964B2 (ja) * | 1997-02-10 | 2007-06-27 | 三菱電機株式会社 | 高耐圧半導体装置およびその製造方法 |
JP3409244B2 (ja) | 1998-02-26 | 2003-05-26 | 株式会社豊田中央研究所 | 半導体装置 |
US6433396B1 (en) * | 1999-10-05 | 2002-08-13 | International Rectifier Corporation | Trench MOSFET with integrated schottky device and process for its manufacture |
US6593620B1 (en) | 2000-10-06 | 2003-07-15 | General Semiconductor, Inc. | Trench DMOS transistor with embedded trench schottky rectifier |
JP2003017701A (ja) | 2001-07-04 | 2003-01-17 | Denso Corp | 半導体装置 |
-
2005
- 2005-04-08 JP JP2005112645A patent/JP4176734B2/ja not_active Expired - Fee Related
- 2005-05-12 US US11/127,224 patent/US7230297B2/en active Active
-
2007
- 2007-04-25 US US11/740,045 patent/US7564097B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20050258479A1 (en) | 2005-11-24 |
JP2005354037A (ja) | 2005-12-22 |
US7230297B2 (en) | 2007-06-12 |
US7564097B2 (en) | 2009-07-21 |
US20070194372A1 (en) | 2007-08-23 |
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