JP2006351713A - 絶縁ゲート型半導体装置 - Google Patents
絶縁ゲート型半導体装置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 140
- 210000000746 body region Anatomy 0.000 claims abstract description 31
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- 230000015556 catabolic process Effects 0.000 abstract description 9
- 238000006731 degradation reaction Methods 0.000 abstract 1
- 238000011084 recovery Methods 0.000 description 24
- 238000000034 method Methods 0.000 description 18
- 238000004088 simulation Methods 0.000 description 12
- 238000005468 ion implantation Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 230000006866 deterioration Effects 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000033001 locomotion Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000008186 active pharmaceutical agent Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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- H01L29/063—Reduced surface field [RESURF] pn-junction structures
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- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
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Abstract
【解決手段】半導体装置100は,N+ ドレイン領域11上に位置し,P型コラム領域61とN型コラム領域62とを交互に配置することによってスーパージャンクション構造を構成するスーパージャンクション層1と,そのスーパージャンクション層1上に位置し,N- ドリフト領域12中にPフローティング領域51を内蔵するフローティング層2と,そのフローティング層2上に位置し,P- ボディ領域41内にN+ ソース領域31が形成された素子層3とを備えている。
【選択図】 図1
Description
2 フローティング層(第2半導体層)
3 素子層(第3半導体層)
11 N+ ドレイン領域(ドレイン領域)
12 N- ドリフト領域(ドリフト領域)
13 P中継領域(中継半導体領域)
21 トレンチ(トレンチ部)
22 ゲート電極(ゲート電極層)
23 堆積絶縁層(堆積絶縁層)
31 N+ ソース領域(ソース領域)
41 P- ボディ領域(ボディ領域)
51 Pフローティング領域(フローティング領域)
61 P型コラム領域(第2コラム群のコラム領域)
62 N型コラム領域(第1コラム群のコラム領域)
63 P型中継領域(中継コラム領域)
100 半導体装置(絶縁ゲート型半導体装置)
Claims (3)
- 主表面側に位置し第1導電型半導体であるソース領域と,裏面側に位置し第1導電型半導体であるドレイン領域とを備えた絶縁ゲート型半導体装置において,
第1導電型半導体である複数のコラム領域からなる第1コラム群と,第2導電型半導体である複数のコラム領域からなる第2コラム群と,第2導電型半導体であり前記第2コラム群の隣り合うコラム領域を繋ぎ合わせる中継コラム領域とを有し,前記第1コラム群のコラム領域と前記第2コラム領域のコラム領域とが幅方向に交互に配置され,前記ドレイン領域上に位置する第1半導体層と,
第1導電型半導体であるドリフト領域と,前記ドリフト領域に囲まれ第2導電型半導体であるフローティング領域と,前記ドリフト領域を貫通し第2導電型半導体である中継半導体領域とを有し,前記第1半導体層上に位置する第2半導体層と,
絶縁膜を挟んでゲート電極層と対面し,第2導電型半導体であるボディ領域を有し,前記ソース領域が前記ボディ領域内に配置され,前記第2半導体層上に位置する第3半導体層とを備え,
前記第2半導体層の中継半導体領域は,その上面が前記第3半導体層のボディ領域と繋がり,その下面が前記第1半導体層の第2コラム群のコラム領域もしくは中継コラム領域の少なくとも一方と繋がっていることを特徴とする絶縁ゲート型半導体装置。 - 請求項1に記載する絶縁ゲート型半導体装置において,
主表面に開口部が設けられ,前記第1半導体層を貫通するとともにその底部が前記第2半導体層のフローティング領域内に位置するトレンチ部を備えることを特徴とする絶縁ゲート型半導体装置。 - 請求項2に記載する絶縁ゲート型半導体装置において,
前記トレンチ部は,前記ソース領域を貫通し,
前記トレンチ部内には,
絶縁物を堆積してなる堆積絶縁層と,
前記堆積絶縁層上に位置するゲート電極層とが配設され,
前記堆積絶縁層の上端は,前記第3半導体層のボディ領域の下端よりも下方に位置することを特徴とする絶縁ゲート型半導体装置。
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JP2006351713A true JP2006351713A (ja) | 2006-12-28 |
JP4735067B2 JP4735067B2 (ja) | 2011-07-27 |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014207793A1 (ja) * | 2013-06-24 | 2014-12-31 | 株式会社日立製作所 | 半導体装置およびその製造方法 |
US9312330B2 (en) | 2009-07-15 | 2016-04-12 | Fuji Electric Co., Ltd. | Super-junction semiconductor device |
US9543428B2 (en) | 2012-06-13 | 2017-01-10 | Denso Corporation | Silicon carbide semiconductor device and method for producing the same |
CN108074963A (zh) * | 2016-11-16 | 2018-05-25 | 深圳尚阳通科技有限公司 | 超结器件及其制造方法 |
JP2021007129A (ja) * | 2019-06-28 | 2021-01-21 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004200441A (ja) * | 2002-12-19 | 2004-07-15 | Toyota Central Res & Dev Lab Inc | 半導体装置とその製造方法 |
JP2004311716A (ja) * | 2003-04-07 | 2004-11-04 | Toshiba Corp | 絶縁ゲート型半導体装置 |
JP2005101560A (ja) * | 2003-08-20 | 2005-04-14 | Denso Corp | 縦型半導体装置 |
-
2005
- 2005-06-14 JP JP2005174026A patent/JP4735067B2/ja not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004200441A (ja) * | 2002-12-19 | 2004-07-15 | Toyota Central Res & Dev Lab Inc | 半導体装置とその製造方法 |
JP2004311716A (ja) * | 2003-04-07 | 2004-11-04 | Toshiba Corp | 絶縁ゲート型半導体装置 |
JP2005101560A (ja) * | 2003-08-20 | 2005-04-14 | Denso Corp | 縦型半導体装置 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9312330B2 (en) | 2009-07-15 | 2016-04-12 | Fuji Electric Co., Ltd. | Super-junction semiconductor device |
US9543428B2 (en) | 2012-06-13 | 2017-01-10 | Denso Corporation | Silicon carbide semiconductor device and method for producing the same |
US9818860B2 (en) | 2012-06-13 | 2017-11-14 | Denso Corporation | Silicon carbide semiconductor device and method for producing the same |
WO2014207793A1 (ja) * | 2013-06-24 | 2014-12-31 | 株式会社日立製作所 | 半導体装置およびその製造方法 |
CN108074963A (zh) * | 2016-11-16 | 2018-05-25 | 深圳尚阳通科技有限公司 | 超结器件及其制造方法 |
JP2021007129A (ja) * | 2019-06-28 | 2021-01-21 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
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