JP7272127B2 - 抵抗素子 - Google Patents
抵抗素子 Download PDFInfo
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- JP7272127B2 JP7272127B2 JP2019110578A JP2019110578A JP7272127B2 JP 7272127 B2 JP7272127 B2 JP 7272127B2 JP 2019110578 A JP2019110578 A JP 2019110578A JP 2019110578 A JP2019110578 A JP 2019110578A JP 7272127 B2 JP7272127 B2 JP 7272127B2
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- 239000010410 layer Substances 0.000 claims description 192
- 239000004065 semiconductor Substances 0.000 claims description 145
- 239000000758 substrate Substances 0.000 claims description 98
- 239000011229 interlayer Substances 0.000 claims description 32
- 230000000149 penetrating effect Effects 0.000 claims description 9
- 238000009413 insulation Methods 0.000 claims description 5
- 239000010408 film Substances 0.000 description 193
- 230000004888 barrier function Effects 0.000 description 53
- 238000004519 manufacturing process Methods 0.000 description 22
- 238000000034 method Methods 0.000 description 21
- 230000002093 peripheral effect Effects 0.000 description 18
- 230000004048 modification Effects 0.000 description 16
- 238000012986 modification Methods 0.000 description 16
- 229920002120 photoresistant polymer Polymers 0.000 description 16
- 230000010355 oscillation Effects 0.000 description 11
- 230000008569 process Effects 0.000 description 11
- 239000012535 impurity Substances 0.000 description 10
- 230000001681 protective effect Effects 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 239000010936 titanium Substances 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- 239000002131 composite material Substances 0.000 description 6
- 239000012071 phase Substances 0.000 description 6
- 238000000206 photolithography Methods 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 239000011574 phosphorus Substances 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910018125 Al-Si Inorganic materials 0.000 description 1
- 229910018182 Al—Cu Inorganic materials 0.000 description 1
- 229910018520 Al—Si Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910017758 Cu-Si Inorganic materials 0.000 description 1
- 229910017931 Cu—Si Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 150000003961 organosilicon compounds Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- -1 transition metal nitride Chemical class 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
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- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
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- H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
- H01L27/0676—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type comprising combinations of diodes, or capacitors or resistors
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Description
<抵抗素子>
本発明の第1実施形態に係る抵抗素子は、例えば絶縁ゲート型バイポーラトランジスタ(IGBT)等のスイッチング素子(主半導体素子)のゲートに接続されるゲート抵抗素子として適用される。
ここで、比較例に係る抵抗素子を説明する。比較例に係る抵抗素子は、図4に示すように、第1パッド形成電極5a及び第2パッド形成電極5bの直下に、半導体基板1と共にショットキーバリアダイオードを構成する第1並列コンタクト領域6h及び第2並列コンタクト領域6iを設けていない点が、図2に示した第1実施形態に係る抵抗素子と異なる。比較例に係る抵抗素子を主半導体素子のゲート抵抗素子として用いた場合には、主半導体素子のターンオン時とターンオフ時のゲート抵抗値が同じである。このため、短絡時の発振を抑制するためにゲート抵抗素子の抵抗値を大きくすると、ターンオフ時の定常的なスイッチング損失が増加するというトレードオフの関係がある。
図5Cは、図2に示すように第1実施形態に係る抵抗素子の左側の第1パッド形成電極5a直下に第1並列コンタクト領域6hを設けてショットキーバリアダイオードを形成するが、右側の第2パッド形成電極5b直下には並列コンタクト領域6iを設けない構成とした場合の、左側の第1抵抗層3a及び右側の第2抵抗層3bのそれぞれをゲート抵抗素子として使用した場合のゲート-エミッタ間電圧VGE、コレクタ-エミッタ間電圧VCE、コレクタ電流ICの経時的な変化を示す。
次に、図6~図16を参照しながら、第1実施形態に係る抵抗素子の製造方法の一例を説明する。なお、以下に述べる抵抗素子の製造方法や例示的に示した数値及び材料等は一例であり、特許請求の範囲に記載した趣旨の範囲であれば、この変形例を含めて、これ以外の種々の製造方法により実現可能であることは勿論である。
第1実施形態の第1変形例に係る抵抗素子は、図17及び図18に示すように、抵抗素子を構成している半導体チップの端部(チップ端部)に設けられるガードリング層5dの一部が分断されている点が、図1及び図2に示した第1実施形態に係る抵抗素子と異なる。ガードリング層5dの分断された箇所に、一対の第1パッド形成電極5a及び第2パッド形成電極5bの凸部で構成される延長部(第1延長部)5e及び他の延長部(第2延長部)5fが配置されている。第1延長部5e及び第2延長部5fの形状や配置位置は特に限定されないが、第1ボンディングワイヤ21及び第2ボンディングワイヤ22の接合位置の近傍に配置されることが好ましい。
第1実施形態の第2変形例に係る抵抗素子は、図19に示すように第1下層絶縁膜2a及び第2下層絶縁膜2b上に第1抵抗層3aと離間して、電位的に浮遊(フローティング)状態にある第1補助膜3cが配置されている点が、図17及び図18に示した第1変形例に係る抵抗素子と異なる。同様に、第1下層絶縁膜2a及び第2下層絶縁膜2b上に第2抵抗層3bと離間して、電位的に浮遊状態にある第2補助膜3dが配置されている点も、図17及び図18に示した第1変形例に係る抵抗素子と異なる。
第2実施形態に係る抵抗素子は、図20に示すように、半導体基板1と、半導体基板1上に配置された第1下層絶縁膜2a及び第2下層絶縁膜2bと、第1下層絶縁膜2a及び第2下層絶縁膜2bの上にそれぞれ配置された第1抵抗層3a及び第2抵抗層3bを備える点は、図2に示した第1実施形態に係る抵抗素子と共通する。更に、第2実施形態に係る抵抗素子は、第1下層絶縁膜2a、第2下層絶縁膜2b、第1抵抗層3a及び第2抵抗層3bを被覆するように配置された層間絶縁膜4と、層間絶縁膜4上に配置された一対の第1パッド形成電極5a及び第2パッド形成電極5b並びに中継配線5cを備える点は、図2に示した第1実施形態に係る抵抗素子と共通する。
上記のように、本発明は第1及び2実施形態によって記載したが、この開示の一部をなす論述及び図面は本発明を限定するものであると理解すべきではない。この開示から当業者には様々な代替実施形態、実施例及び運用技術が明らかとなろう。
2…絶縁膜
2a…第1下層絶縁膜
2b…第2下層絶縁膜
3…DOPOS層
3a…第1抵抗層
3b…第2抵抗層
3c,3d…補助膜
4…層間絶縁膜
4a,4b,4c,4d,4e,4f,4g,4h,4i…コンタクトホール
5…金属膜
5a…第1パッド形成電極
5b…第2パッド形成電極
5c…中継配線
5d…ガードリング層
5e,5f…延長部
6,6a,6b,6c,6d,6e,6f,6g,6h,6i…コンタクト領域
7…保護膜
9…対向電極
10,15…中央コンタクト領域
11,13…第1周辺コンタクト領域
12,14…第2周辺コンタクト領域
21,22…ボンディングワイヤ
100…インバータモジュール
D1~D12,D21~D32…ショットキーバリアダイオード
R1~R12,R21~R32…ゲート抵抗素子
TR1~TR12…半導体素子
Claims (7)
- 半導体基板と、
前記半導体基板上に設けられた下層絶縁膜と、
前記下層絶縁膜上に設けられた抵抗層と、
前記抵抗層を被覆する層間絶縁膜と、
前記層間絶縁膜上に配置され、前記抵抗層の一方の端部に第1端部側が接続され、前記第1端部側に対向する第2端部側が前記半導体基板に電気的にショットキー接触されるパッド形成電極と、
前記抵抗層の他方の端部に接続され、且つ前記半導体基板にオーミック接続される一端を有する中継配線と、
前記半導体基板下に設けられた対向電極と、
を備え、前記パッド形成電極と前記対向電極の間の抵抗値を用いることを特徴とする抵抗素子。 - 前記第2端部側が前記下層絶縁膜及び前記層間絶縁膜を貫通する基板コンタクト領域を介して前記半導体基板にショットキー接触されることを特徴とする請求項1に記載の抵抗素子。
- 前記パッド形成電極が、前記半導体基板の端部側に向かって延長される延長部を有し、
前記延長部が、前記層間絶縁膜を貫通する端部コンタクト領域を介して前記半導体基板にショットキー接触される
ことを特徴とする請求項1に記載の抵抗素子。 - 前記半導体基板の上部に、前記半導体基板よりも低比抵抗で前記半導体基板と同一導電型の中央コンタクト領域を更に備え、
当該中央コンタクト領域に前記中継配線の一端がオーミック接触される
ことを特徴とする請求項1~3のいずれか1項に記載の抵抗素子。 - 前記半導体基板は、n型の半導体基板であることを特徴とする請求項1~4のいずれか1項に記載の抵抗素子。
- 前記半導体基板は、p型の半導体基板であることを特徴とする請求項1~4のいずれか1項に記載の抵抗素子。
- 前記層間絶縁膜の下において、前記下層絶縁膜上の他の位置に前記抵抗層と離間して設けられ、前記中継配線の前記一端に対向する他端に電気的に接続される他の抵抗層と、
前記層間絶縁膜上に配置され、前記他の抵抗層に第3端部側が接続され、前記第3端部側に対向する第4端部側が前記半導体基板に電気的にショットキー接触される他のパッド形成電極と、
を更に備えることを特徴とする請求項1~6のいずれか1項に記載の抵抗素子。
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US11211377B2 (en) | 2021-12-28 |
US20200395355A1 (en) | 2020-12-17 |
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