JPS57208178A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS57208178A JPS57208178A JP9474681A JP9474681A JPS57208178A JP S57208178 A JPS57208178 A JP S57208178A JP 9474681 A JP9474681 A JP 9474681A JP 9474681 A JP9474681 A JP 9474681A JP S57208178 A JPS57208178 A JP S57208178A
- Authority
- JP
- Japan
- Prior art keywords
- film
- layer
- metal
- sbd
- wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 229910052751 metal Inorganic materials 0.000 abstract 7
- 239000002184 metal Substances 0.000 abstract 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 2
- 230000004888 barrier function Effects 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract 2
- 229910052721 tungsten Inorganic materials 0.000 abstract 2
- 239000010937 tungsten Substances 0.000 abstract 2
- 239000000956 alloy Substances 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 230000009257 reactivity Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
Abstract
PURPOSE:To suppress the thermal variation of a barrier height of an SBD (Schottky barrier diode) by interposing a metal film or an alloy film having less reactivity with an SBD forming contact metal and wiring metal layer between the contact metal and the wiring metal layer. CONSTITUTION:A Ti film 2, an aluminum wire layer 3 and a dioxided silicon film 4 are formed on a silicon substrate 1. A tungsten film 5 is interposed as a metal film of an intermediate layer between a Ti film 2 as an SBD forming contact metal and an aluminum layer 3 as a wiring layer. The mutual diffusion between the film 2 and the layer 3 is suppressed due to the interposition of the film 5. The tungsten film 5 seldom reacts with the film 2 and the layer 3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9474681A JPS57208178A (en) | 1981-06-18 | 1981-06-18 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9474681A JPS57208178A (en) | 1981-06-18 | 1981-06-18 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57208178A true JPS57208178A (en) | 1982-12-21 |
Family
ID=14118684
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9474681A Pending JPS57208178A (en) | 1981-06-18 | 1981-06-18 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57208178A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6342168A (en) * | 1986-08-08 | 1988-02-23 | インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン | Semiconductor device |
| US5081510A (en) * | 1988-11-11 | 1992-01-14 | Sanken Electric Co., Ltd. | High-voltage semiconductor device having a rectifying barrier, and method of fabrication |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5140879A (en) * | 1974-10-04 | 1976-04-06 | Hitachi Ltd | SHOTSUTOKI BARIADAIOODO |
-
1981
- 1981-06-18 JP JP9474681A patent/JPS57208178A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5140879A (en) * | 1974-10-04 | 1976-04-06 | Hitachi Ltd | SHOTSUTOKI BARIADAIOODO |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6342168A (en) * | 1986-08-08 | 1988-02-23 | インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン | Semiconductor device |
| US5081510A (en) * | 1988-11-11 | 1992-01-14 | Sanken Electric Co., Ltd. | High-voltage semiconductor device having a rectifying barrier, and method of fabrication |
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