JPS5458380A - Zener diode - Google Patents
Zener diodeInfo
- Publication number
- JPS5458380A JPS5458380A JP12450577A JP12450577A JPS5458380A JP S5458380 A JPS5458380 A JP S5458380A JP 12450577 A JP12450577 A JP 12450577A JP 12450577 A JP12450577 A JP 12450577A JP S5458380 A JPS5458380 A JP S5458380A
- Authority
- JP
- Japan
- Prior art keywords
- diode
- substrate
- wiring layer
- bump electrode
- dhs
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To establish the Zener diode of high reliability as for DHS(double heat sink), by providing the bump electrode via the wiring layer on the diode, through the provision of diode on the substrate at the output side of temperature compensation type diode.
CONSTITUTION: The region 2 being transistors T1 to T3, and the region 3 being resistor R1 to R4 and diodes D1 to D3 are formed on the n type substrate 1. At the location apart from those, the diode D4 is formed by placing the p layer 7. Opening window is made to the oxide film 4 on it, the wiring layer connected to the regions 2 and 3 is provided, Ag bump electrode 8 is made and it is covered with PSG 6. with this constitution, in evaporating the wiring layer 5, the evaporated metal is slightly diffused in the substrate, increasing the bonding force with the substrate and the bump electrode. The performance can be improved and the DHS Zener element with high reliability can be obtained
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12450577A JPS5458380A (en) | 1977-10-19 | 1977-10-19 | Zener diode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12450577A JPS5458380A (en) | 1977-10-19 | 1977-10-19 | Zener diode |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5458380A true JPS5458380A (en) | 1979-05-11 |
JPS6125220B2 JPS6125220B2 (en) | 1986-06-14 |
Family
ID=14887141
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12450577A Granted JPS5458380A (en) | 1977-10-19 | 1977-10-19 | Zener diode |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5458380A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59208787A (en) * | 1983-05-13 | 1984-11-27 | Hitachi Ltd | Equivalent zener diode |
US4567500A (en) * | 1981-12-01 | 1986-01-28 | Rca Corporation | Semiconductor structure for protecting integrated circuit devices |
US5066991A (en) * | 1989-12-26 | 1991-11-19 | Motorola, Inc. | Semiconductor diode and method |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5257780A (en) * | 1975-11-06 | 1977-05-12 | Mitsubishi Electric Corp | Semiconductor device |
JPS5265688A (en) * | 1975-11-25 | 1977-05-31 | Siemens Corp | Temperature compensating reference standard diode and method of producing same |
-
1977
- 1977-10-19 JP JP12450577A patent/JPS5458380A/en active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5257780A (en) * | 1975-11-06 | 1977-05-12 | Mitsubishi Electric Corp | Semiconductor device |
JPS5265688A (en) * | 1975-11-25 | 1977-05-31 | Siemens Corp | Temperature compensating reference standard diode and method of producing same |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4567500A (en) * | 1981-12-01 | 1986-01-28 | Rca Corporation | Semiconductor structure for protecting integrated circuit devices |
JPS59208787A (en) * | 1983-05-13 | 1984-11-27 | Hitachi Ltd | Equivalent zener diode |
US5066991A (en) * | 1989-12-26 | 1991-11-19 | Motorola, Inc. | Semiconductor diode and method |
Also Published As
Publication number | Publication date |
---|---|
JPS6125220B2 (en) | 1986-06-14 |
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