EP0368127A3 - High-voltage semiconductor device having a rectifying barrier, and method of fabrication - Google Patents

High-voltage semiconductor device having a rectifying barrier, and method of fabrication Download PDF

Info

Publication number
EP0368127A3
EP0368127A3 EP19890120211 EP89120211A EP0368127A3 EP 0368127 A3 EP0368127 A3 EP 0368127A3 EP 19890120211 EP19890120211 EP 19890120211 EP 89120211 A EP89120211 A EP 89120211A EP 0368127 A3 EP0368127 A3 EP 0368127A3
Authority
EP
European Patent Office
Prior art keywords
fabrication
semiconductor device
voltage semiconductor
rectifying barrier
rectifying
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP19890120211
Other versions
EP0368127A2 (en
EP0368127B1 (en
Inventor
Koji Ohtsuka
Hirokazu Goto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanken Electric Co Ltd
Original Assignee
Sanken Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanken Electric Co Ltd filed Critical Sanken Electric Co Ltd
Publication of EP0368127A2 publication Critical patent/EP0368127A2/en
Publication of EP0368127A3 publication Critical patent/EP0368127A3/en
Application granted granted Critical
Publication of EP0368127B1 publication Critical patent/EP0368127B1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/6609—Diodes
    • H01L29/66143—Schottky diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/095—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being Schottky barrier gate field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/47—Schottky barrier electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/47—Schottky barrier electrodes
    • H01L29/475—Schottky barrier electrodes on AIII-BV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/139—Schottky barrier
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/14—Schottky barrier contacts
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/934—Sheet resistance, i.e. dopant parameters

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
EP89120211A 1988-11-11 1989-10-31 High-voltage semiconductor device having a rectifying barrier, and method of fabrication Expired - Lifetime EP0368127B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP285048/88 1988-11-11
JP63285048A JPH0618276B2 (en) 1988-11-11 1988-11-11 Semiconductor device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
EP93115576.6 Division-Into 1993-09-27

Publications (3)

Publication Number Publication Date
EP0368127A2 EP0368127A2 (en) 1990-05-16
EP0368127A3 true EP0368127A3 (en) 1990-09-19
EP0368127B1 EP0368127B1 (en) 1994-08-17

Family

ID=17686493

Family Applications (2)

Application Number Title Priority Date Filing Date
EP89120211A Expired - Lifetime EP0368127B1 (en) 1988-11-11 1989-10-31 High-voltage semiconductor device having a rectifying barrier, and method of fabrication
EP19930115576 Withdrawn EP0579286A3 (en) 1988-11-11 1989-10-31 Method of fabricating a semiconductor device with schottky barrier

Family Applications After (1)

Application Number Title Priority Date Filing Date
EP19930115576 Withdrawn EP0579286A3 (en) 1988-11-11 1989-10-31 Method of fabricating a semiconductor device with schottky barrier

Country Status (5)

Country Link
US (2) US5081510A (en)
EP (2) EP0368127B1 (en)
JP (1) JPH0618276B2 (en)
KR (1) KR930004717B1 (en)
DE (1) DE68917558T2 (en)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5221638A (en) * 1991-09-10 1993-06-22 Sanken Electric Co., Ltd. Method of manufacturing a Schottky barrier semiconductor device
JPH05335489A (en) * 1992-06-02 1993-12-17 Nec Corp Semiconductor device
US5622877A (en) * 1993-03-02 1997-04-22 Ramot University Authority For Applied Research & Industrial Development Ltd. Method for making high-voltage high-speed gallium arsenide power Schottky diode
US5594237A (en) * 1995-02-24 1997-01-14 The Whitaker Corporation PIN detector having improved linear response
JP3123452B2 (en) * 1996-12-10 2001-01-09 富士電機株式会社 Schottky barrier diode
JP3287269B2 (en) 1997-06-02 2002-06-04 富士電機株式会社 Diode and manufacturing method thereof
US6379509B2 (en) * 1998-01-20 2002-04-30 3M Innovative Properties Company Process for forming electrodes
US6229193B1 (en) * 1998-04-06 2001-05-08 California Institute Of Technology Multiple stage high power diode
EP1145298A3 (en) * 1998-05-26 2002-11-20 Infineon Technologies AG Method for producing schottky diodes
US7135718B2 (en) * 2002-02-20 2006-11-14 Shindengen Electric Manufacturing Co., Ltd. Diode device and transistor device
US8901699B2 (en) 2005-05-11 2014-12-02 Cree, Inc. Silicon carbide junction barrier Schottky diodes with suppressed minority carrier injection
JP4730529B2 (en) * 2005-07-13 2011-07-20 サンケン電気株式会社 Field effect transistor
US7662698B2 (en) * 2006-11-07 2010-02-16 Raytheon Company Transistor having field plate
US9893192B2 (en) * 2013-04-24 2018-02-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6544264B2 (en) * 2016-02-23 2019-07-17 サンケン電気株式会社 Semiconductor device
DE102016013540A1 (en) * 2016-11-14 2018-05-17 3 - 5 Power Electronics GmbH III-V semiconductor diode
JP6558385B2 (en) * 2017-02-23 2019-08-14 トヨタ自動車株式会社 Manufacturing method of semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2090302A1 (en) * 1970-05-26 1972-01-14 Westinghouse Electric Corp

Family Cites Families (26)

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Publication number Priority date Publication date Assignee Title
US3599054A (en) * 1968-11-22 1971-08-10 Bell Telephone Labor Inc Barrier layer devices and methods for their manufacture
US3616380A (en) * 1968-11-22 1971-10-26 Bell Telephone Labor Inc Barrier layer devices and methods for their manufacture
US4157563A (en) * 1971-07-02 1979-06-05 U.S. Philips Corporation Semiconductor device
US3907617A (en) * 1971-10-22 1975-09-23 Motorola Inc Manufacture of a high voltage Schottky barrier device
JPS4941463A (en) * 1972-07-26 1974-04-18
JPS51126761A (en) * 1975-04-25 1976-11-05 Sony Corp Schottky barrier type semi-conductor unit
US4408216A (en) * 1978-06-02 1983-10-04 International Rectifier Corporation Schottky device and method of manufacture using palladium and platinum intermetallic alloys and titanium barrier for low reverse leakage over wide temperature range
US4312113A (en) * 1978-10-23 1982-01-26 Eaton Corporation Method of making field-effect transistors with micron and submicron gate lengths
US4312112A (en) * 1978-10-23 1982-01-26 Eaton Corporation Method of making field-effect transistors with micron and submicron gate lengths
US4310570A (en) * 1979-12-20 1982-01-12 Eaton Corporation Field-effect transistors with micron and submicron gate lengths
JPS57208178A (en) * 1981-06-18 1982-12-21 Fujitsu Ltd Semiconductor device
JPS5846631A (en) * 1981-09-16 1983-03-18 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and manufacture thereof
JPS5861763A (en) * 1981-10-09 1983-04-12 武笠　均 Feel sensor fire fighting apparatus
JPS59110173A (en) * 1982-12-15 1984-06-26 Fuji Electric Corp Res & Dev Ltd Schottky barrier diode
JPS59132661A (en) * 1983-01-20 1984-07-30 Matsushita Electronics Corp Schottky barrier type semiconductor device
JPS59220976A (en) * 1983-05-31 1984-12-12 Nec Home Electronics Ltd Schottky barrier diode
JPS59232467A (en) * 1983-06-16 1984-12-27 Toshiba Corp Schottky barrier diode with guard ring
JPS6020585A (en) * 1983-07-14 1985-02-01 Sanyo Electric Co Ltd Schottky barrier diode
US4899199A (en) * 1983-09-30 1990-02-06 International Rectifier Corporation Schottky diode with titanium or like layer contacting the dielectric layer
JPS60157268A (en) * 1984-01-26 1985-08-17 Rohm Co Ltd Schottky barrier diode
JPS60178670A (en) * 1984-02-24 1985-09-12 Nec Corp Schottky barrier diode
JPS61166164A (en) * 1985-01-18 1986-07-26 Sanyo Electric Co Ltd Schottky barrier semiconductor device
GB2176339A (en) * 1985-06-10 1986-12-17 Philips Electronic Associated Semiconductor device with schottky junctions
JPS6394673A (en) * 1986-10-09 1988-04-25 Sanken Electric Co Ltd Manufacture of schottky barrier semiconductor device
JPS6394674A (en) * 1986-10-09 1988-04-25 Sanken Electric Co Ltd Schottky barrier semiconductor device
JPH0817229B2 (en) * 1988-03-31 1996-02-21 サンケン電気株式会社 Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2090302A1 (en) * 1970-05-26 1972-01-14 Westinghouse Electric Corp

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN, vol. 8, no. 229 (E-273)[1666], 20th October 1984; & JP-A-59 110 173 (FUJI DENKI SOUGOU KENKYUSHO K.K.) 26-06-1984 *
PATENT ABSTRACTS OF JAPAN, vol. 9, no. 325 (E-368)[2048], 20th December 1985; & JP-A-60 157 268 (ROOMU K.K.) 17-08-1985 *

Also Published As

Publication number Publication date
EP0368127A2 (en) 1990-05-16
DE68917558D1 (en) 1994-09-22
EP0579286A2 (en) 1994-01-19
KR930004717B1 (en) 1993-06-03
JPH0618276B2 (en) 1994-03-09
EP0579286A3 (en) 1994-09-07
DE68917558T2 (en) 1995-04-20
KR900008668A (en) 1990-06-04
US5112774A (en) 1992-05-12
US5081510A (en) 1992-01-14
EP0368127B1 (en) 1994-08-17
JPH02130959A (en) 1990-05-18

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