KR840000987A - 반도체 스위칭 장치 - Google Patents
반도체 스위칭 장치 Download PDFInfo
- Publication number
- KR840000987A KR840000987A KR1019820003374A KR820003374A KR840000987A KR 840000987 A KR840000987 A KR 840000987A KR 1019820003374 A KR1019820003374 A KR 1019820003374A KR 820003374 A KR820003374 A KR 820003374A KR 840000987 A KR840000987 A KR 840000987A
- Authority
- KR
- South Korea
- Prior art keywords
- switching device
- semiconductor switching
- region
- elements
- common
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims 4
- 230000002457 bidirectional effect Effects 0.000 claims 1
- 230000015556 catabolic process Effects 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/747—Bidirectional devices, e.g. triacs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/87—Thyristor diodes, e.g. Shockley diodes, break-over diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1,4 및 5도는 본 발명에 따른 각종 실시예의 단면도.
Claims (1)
- 교대로 엇갈려 배열된 5개의 전도성 영역(17,13,14,15,18)을 포함한 제1부분과; 제1 및 제2주표면(11,12)를 가진 반도체 재질의 본체를 포함하는 반도체 스위칭 장치에 있어서, 3개의 영역소자중 한영역(13)이 5개의 영역소자중의 한 영역소자와 공통으로되어, 이 공통영역이 5개의 영역소자의 도통방향을 트리거시키는 게이트 소자로서 작용하게되는, 3개의 영역으로된 양방향성 전압감지파괴소자(20,19,13)를 포함하며, 상기 제1부분과 일체로 형성된 제2 부분을 또한 구비하여 특징으로 하는 반도체 스위칭 장치.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US288001 | 1981-07-29 | ||
US06/288,001 US4797720A (en) | 1981-07-29 | 1981-07-29 | Controlled breakover bidirectional semiconductor switch |
Publications (1)
Publication Number | Publication Date |
---|---|
KR840000987A true KR840000987A (ko) | 1984-03-26 |
Family
ID=23105332
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019820003374A KR840000987A (ko) | 1981-07-29 | 1982-07-28 | 반도체 스위칭 장치 |
Country Status (8)
Country | Link |
---|---|
US (1) | US4797720A (ko) |
EP (1) | EP0084050B1 (ko) |
JP (1) | JPS58501204A (ko) |
KR (1) | KR840000987A (ko) |
CA (1) | CA1189633A (ko) |
DE (1) | DE3275045D1 (ko) |
GB (1) | GB2104286B (ko) |
WO (1) | WO1983000582A1 (ko) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2574594B1 (fr) * | 1984-12-11 | 1987-01-16 | Silicium Semiconducteur Ssc | Structure integree de triac a commande par diac |
US4886762A (en) * | 1985-08-06 | 1989-12-12 | Motorola Inc. | Monolithic temperature compensated voltage-reference diode and method for its manufacture |
US4967256A (en) * | 1988-07-08 | 1990-10-30 | Texas Instruments Incorporated | Overvoltage protector |
US4999683A (en) * | 1988-12-30 | 1991-03-12 | Sanken Electric Co., Ltd. | Avalanche breakdown semiconductor device |
GB9127476D0 (en) * | 1991-12-30 | 1992-02-19 | Texas Instruments Ltd | A semiconductor integrated circuit |
GB9215017D0 (en) * | 1992-07-15 | 1992-08-26 | Texas Instruments Ltd | Solid state suppressor |
US5479031A (en) * | 1993-09-10 | 1995-12-26 | Teccor Electronics, Inc. | Four layer overvoltage protection device having buried regions aligned with shorting dots to increase the accuracy of overshoot voltage value |
FR2753837B1 (fr) * | 1996-09-25 | 1999-01-29 | Composant de protection a retournement bidirectionnel a claquage en surface | |
DE19849902A1 (de) * | 1998-10-29 | 2000-05-11 | Roland Sittig | Halbleiterbauelement |
FR2787637B1 (fr) * | 1998-12-18 | 2001-03-09 | Centre Nat Rech Scient | Structure peripherique pour dispositif monolithique de puissance |
GB9919764D0 (en) * | 1999-08-21 | 1999-10-27 | Koninkl Philips Electronics Nv | Thyristors and their manufacture |
US6333457B1 (en) * | 2000-08-29 | 2001-12-25 | Sunpower Corporation | Edge passivated silicon solar/photo cell and method of manufacture |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3196330A (en) * | 1960-06-10 | 1965-07-20 | Gen Electric | Semiconductor devices and methods of making same |
US3196329A (en) * | 1963-03-08 | 1965-07-20 | Texas Instruments Inc | Symmetrical switching diode |
US3275909A (en) * | 1963-12-19 | 1966-09-27 | Gen Electric | Semiconductor switch |
US3391310A (en) * | 1964-01-13 | 1968-07-02 | Gen Electric | Semiconductor switch |
US3346744A (en) * | 1964-02-07 | 1967-10-10 | Gen Electric | Power control circuits |
US3423650A (en) * | 1966-07-01 | 1969-01-21 | Rca Corp | Monolithic semiconductor microcircuits with improved means for connecting points of common potential |
US3475666A (en) * | 1966-08-15 | 1969-10-28 | Jearld L Hutson | Integrated semiconductor switch system |
US3524114A (en) * | 1968-02-29 | 1970-08-11 | Jearld L Hutson | Thyristor having sensitive gate turn-on characteristics |
US3907615A (en) * | 1968-06-28 | 1975-09-23 | Philips Corp | Production of a three-layer diac with five-layer edge regions having middle region thinner at center than edge |
US4032958A (en) * | 1972-12-29 | 1977-06-28 | Sony Corporation | Semiconductor device |
US3979820A (en) * | 1974-10-30 | 1976-09-14 | General Electric Company | Deep diode lead throughs |
US4079407A (en) * | 1975-04-07 | 1978-03-14 | Hutson Jearld L | Single chip electronic switching circuit responsive to external stimuli |
SE392783B (sv) * | 1975-06-19 | 1977-04-18 | Asea Ab | Halvledaranordning innefattande en tyristor och en felteffekttransistordel |
IT1061511B (it) * | 1975-07-03 | 1983-04-30 | Rca Corp | Transistore con protezione integrata |
JPS583386B2 (ja) * | 1975-10-11 | 1983-01-21 | 株式会社日立製作所 | ソウホウコウセイホトサイリスタ |
US4066483A (en) * | 1976-07-07 | 1978-01-03 | Western Electric Company, Inc. | Gate-controlled bidirectional switching device |
SE430450B (sv) * | 1979-04-03 | 1983-11-14 | Asea Ab | Tvapoligt overstromsskydd for inkoppling i en stromforande ledning |
DE2945380A1 (de) * | 1979-11-09 | 1981-05-21 | Siemens AG, 1000 Berlin und 8000 München | Triac mit einem mehrschichten-halbleiterkoerper |
JPS5680929A (en) * | 1979-12-04 | 1981-07-02 | Nippon Gakki Seizo Kk | Triggering circuit for two-way thyristor such as triac |
US4309715A (en) * | 1979-12-28 | 1982-01-05 | Bell Telephone Laboratories, Incorporated | Integral turn-on high voltage switch |
US4353025A (en) * | 1980-12-08 | 1982-10-05 | Hybrinetics, Inc. | Phase controlled voltage reducing circuit having line voltage compensation |
-
1981
- 1981-07-29 US US06/288,001 patent/US4797720A/en not_active Expired - Fee Related
-
1982
- 1982-06-23 CA CA000405782A patent/CA1189633A/en not_active Expired
- 1982-07-12 EP EP82902501A patent/EP0084050B1/en not_active Expired
- 1982-07-12 JP JP57502481A patent/JPS58501204A/ja active Pending
- 1982-07-12 DE DE8282902501T patent/DE3275045D1/de not_active Expired
- 1982-07-12 WO PCT/US1982/000921 patent/WO1983000582A1/en active IP Right Grant
- 1982-07-27 GB GB08221628A patent/GB2104286B/en not_active Expired
- 1982-07-28 KR KR1019820003374A patent/KR840000987A/ko unknown
Also Published As
Publication number | Publication date |
---|---|
GB2104286A (en) | 1983-03-02 |
CA1189633A (en) | 1985-06-25 |
EP0084050A4 (en) | 1984-03-01 |
EP0084050A1 (en) | 1983-07-27 |
GB2104286B (en) | 1985-05-09 |
EP0084050B1 (en) | 1987-01-07 |
DE3275045D1 (en) | 1987-02-12 |
WO1983000582A1 (en) | 1983-02-17 |
JPS58501204A (ja) | 1983-07-21 |
US4797720A (en) | 1989-01-10 |
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