KR900005606A - 반도체장치 - Google Patents
반도체장치Info
- Publication number
- KR900005606A KR900005606A KR1019890013712A KR890013712A KR900005606A KR 900005606 A KR900005606 A KR 900005606A KR 1019890013712 A KR1019890013712 A KR 1019890013712A KR 890013712 A KR890013712 A KR 890013712A KR 900005606 A KR900005606 A KR 900005606A
- Authority
- KR
- South Korea
- Prior art keywords
- source
- layer
- drain
- semiconductor device
- electrode
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims 2
- 239000000758 substrate Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0891—Source or drain regions of field-effect devices of field-effect transistors with Schottky gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 1실시예의 단면구성도,
제3도는 본 발명과 종래의 구성을 비교한 특성도이다.
Claims (1)
- 반절연성기판(31)에 형성된 제1도전형 동작층(32)과, 이 동작층(32)의 양측에 설치되고 제1도전형 저저항층으로 이루어진 소스와 드레인층(331,332), 상기 동작층(32)의 상부에 설치된 게이트전극(35), 상기 소스와 드레인층(331,332)의 상부에 각각 설치된 소스와 드레인전극((331,332)을 구비하여 구성되어, 상기 소스와 드레인층(331,332)간의 거리가 1.0㎛~2.0㎛이고, 상기 게이트전극(35)과 드레인층 (332)간의 거리가 0.5㎛~1.0㎛인 것을 특징으로 하는 반도체장치.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP88-239327 | 1988-09-24 | ||
| JP63239327A JPH0287533A (ja) | 1988-09-24 | 1988-09-24 | 半導体装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR900005606A true KR900005606A (ko) | 1990-04-14 |
Family
ID=17043073
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019890013712A KR900005606A (ko) | 1988-09-24 | 1989-09-23 | 반도체장치 |
Country Status (3)
| Country | Link |
|---|---|
| EP (1) | EP0364762A1 (ko) |
| JP (1) | JPH0287533A (ko) |
| KR (1) | KR900005606A (ko) |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57177566A (en) * | 1981-04-24 | 1982-11-01 | Nec Corp | Schottky barrier gate type field effect transistor |
| US4956308A (en) * | 1987-01-20 | 1990-09-11 | Itt Corporation | Method of making self-aligned field-effect transistor |
| DE3609274A1 (de) * | 1986-03-19 | 1987-09-24 | Siemens Ag | Verfahren zur herstellung eines selbstjustiert positionierten metallkontaktes |
-
1988
- 1988-09-24 JP JP63239327A patent/JPH0287533A/ja active Pending
-
1989
- 1989-09-22 EP EP89117517A patent/EP0364762A1/en not_active Ceased
- 1989-09-23 KR KR1019890013712A patent/KR900005606A/ko not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| EP0364762A1 (en) | 1990-04-25 |
| JPH0287533A (ja) | 1990-03-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| SUBM | Submission of document of abandonment before or after decision of registration |