KR920017184A - 반도체 장치의 제조방법 - Google Patents

반도체 장치의 제조방법 Download PDF

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Publication number
KR920017184A
KR920017184A KR1019920002246A KR920002246A KR920017184A KR 920017184 A KR920017184 A KR 920017184A KR 1019920002246 A KR1019920002246 A KR 1019920002246A KR 920002246 A KR920002246 A KR 920002246A KR 920017184 A KR920017184 A KR 920017184A
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South Korea
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barrier layer
oxide film
forming
manufacturing
semiconductor device
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KR1019920002246A
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KR960005038B1 (ko
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히데오 다카기
아키히로 요시다
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세키자와 스토무
후지쓰 가부시기가이샤
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Publication of KR920017184A publication Critical patent/KR920017184A/ko
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Publication of KR960005038B1 publication Critical patent/KR960005038B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
    • H01L23/53223—Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/147—Silicides

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

내용 없음

Description

반도체 장치의 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도 내지 제4도는 본 발명의 일시시예에 따른 제조방법의 단계를 설명하기위한 단면도, 제5도는 본 발명에서 사용되는 열처리 피네이스의 구조의 일예를 나타내는 단면도.

Claims (6)

  1. 반도체장치의 제조방법에 있어서, 최소한 하나의 금속으로 이루어진 장벽층을 반도체 기판의 표면상에 형성하고 그 표면이 산화될때 그 표면상에 산화막이 형성될수 있게 하는 단계와, 대기나 대기와 거의 동일한 성분을 갖는 분위기에서 상기 장벽층을 가열함으로써 상기 장벽층의 표면상에 터널 효과에 의해 전류를 통전시킬수 있을 정도의 두께를 가진 산화막을 형성하는 단계와, 알루미늄, 알루미늄 합금, 텅스텐, 금 및 구리중 어느 하나로 이루어진 도전층을 상기 산화막이 위에 형성된 상기 장벽층 상에 용착하는 단계와; 상기 도전층, 상기 산화막 및 상기 장벽층을 연속적으로 에칭함으로써 배선 패턴을 형성하는 단계를 포함하는 것을 특징으로 하는 반도체 장치 제조방법.
  2. 제1항에 있어서, 상기 장벽층은 고융점 금속질화물을 포함하는 것을 특징으로 하는 반도체 장치 제조방법.
  3. 제1항에 있어서, 상기 장벽층은 금속 규소막을 포함한 것을 특징으로 하는 반도체 장치 제조방법.
  4. 반도체장치의 제조방법에 있어서, 최소한 하나의 금속으로 이루어진 장벽층을 반도체 기판의 표면상에 형성하고 그 표면이 산화될때 그 표면상에 산화막이 형성될 수 있게 하는 단계와, 산화성 화학물질 내에 상기 장벽층을 침전시킴으로써 상기 장벽층의 표면상에 터널효과에 의해 전류를 통전시킬수 있을 정도의 두께를 가진 산화막을 형성하는 단계와, 알루미늄, 알루미늄 합금, 텅스텐, 금 및 구리중 어느 하나로 이루어진 도전층을 상기 산화막이 위에 형성된 상기 장벽측 상에 용착하는 단계와; 상기 도전층, 상기 산화막 및 상기 장벽층을 연속적으로 에칭함으로써 배선 패턴을 형성하는 단계를 포함하는 것을 특징으로 하는 반도체 장치 제조방법.
  5. 제4항에 있어서, 상기 장벽층은 고융점 금속질화물을 포함하는 것을 특징으로 하는 반도체 장치 제조방법.
  6. 제4항에 있어서, 상기 장벽층은 금속 규소막을 포함하는 것을 특징으로 하는 반도체 장치 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019920002246A 1991-02-14 1992-02-14 반도체 장치의 제조방법 KR960005038B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP3020605A JPH04259242A (ja) 1991-02-14 1991-02-14 半導体装置の製造方法
JP91-020605 1991-02-14
JP91-20605 1991-02-14

Publications (2)

Publication Number Publication Date
KR920017184A true KR920017184A (ko) 1992-09-26
KR960005038B1 KR960005038B1 (ko) 1996-04-18

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Country Status (4)

Country Link
US (1) US5236869A (ko)
EP (1) EP0499249A3 (ko)
JP (1) JPH04259242A (ko)
KR (1) KR960005038B1 (ko)

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KR100472259B1 (ko) * 2001-03-28 2005-03-08 샤프 가부시키가이샤 접착특성 및 트렌치 충전특성을 향상시키는 구리 증착전의 배리어금속 표면처리방법

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KR100472259B1 (ko) * 2001-03-28 2005-03-08 샤프 가부시키가이샤 접착특성 및 트렌치 충전특성을 향상시키는 구리 증착전의 배리어금속 표면처리방법

Also Published As

Publication number Publication date
KR960005038B1 (ko) 1996-04-18
EP0499249A3 (en) 1993-02-24
EP0499249A2 (en) 1992-08-19
JPH04259242A (ja) 1992-09-14
US5236869A (en) 1993-08-17

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