KR890001178A - 초전도재의 배선을 가지는 반도체장치 - Google Patents

초전도재의 배선을 가지는 반도체장치 Download PDF

Info

Publication number
KR890001178A
KR890001178A KR1019880005422A KR880005422A KR890001178A KR 890001178 A KR890001178 A KR 890001178A KR 1019880005422 A KR1019880005422 A KR 1019880005422A KR 880005422 A KR880005422 A KR 880005422A KR 890001178 A KR890001178 A KR 890001178A
Authority
KR
South Korea
Prior art keywords
semiconductor device
wiring layer
semiconductor
metal
contacts
Prior art date
Application number
KR1019880005422A
Other languages
English (en)
Other versions
KR920005540B1 (ko
Inventor
마사오 다꾸찌
Original Assignee
야마모도 다꾸마
후지쓰 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 야마모도 다꾸마, 후지쓰 가부시끼가이샤 filed Critical 야마모도 다꾸마
Publication of KR890001178A publication Critical patent/KR890001178A/ko
Application granted granted Critical
Publication of KR920005540B1 publication Critical patent/KR920005540B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53285—Conductive materials containing superconducting materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

내용 없음

Description

초전도재의 배선을 가지는 반도체장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 그 위에 초전도재의 총 배선을 가지는 반도체장치의 단면도.
제2도는 그 위에 초전도재의 총 배선을 가지는 다른 반도체장치의 단면도.
제3도는 본 발명의 원리를 모식적으로 설명하는 도.

Claims (10)

  1. 그 위에 다수의 반도체 영역들을 형성한 반도체 기판과, 절연막에 의하여 상기 반도체 기판과 절연되는, 초전도체로 된 배선층과, 상기 반도체 영역을 상기 초전도 배선층에 접속하기 위하여 상기 반도체 영역중의 하나 위에 있고, 적어도 상기 배선층의 측벽에서 콘택트하는, 보통 금속으로된 전극과로 이루어져 있는 반도체장치.
  2. 제1항에 있어서, 상기 배선층이 주로 상기 배선층의 증착 평면에 평행한 방향에서 이방성 초전도체인 반도체장치.
  3. 제1항에 있어서, 상기 전극이 상기 배선층상에 있는 창 호올의 내벽에서 상기 배선층에 콘택트하는 반도체장치.
  4. 제1항 내지 제3항에 있어서, 상기 초전도체가 산화금속을 함유하는 반도체장치.
  5. 제4항에 있어서, 상기 초전도체가 산화구리를 함유하는 반도체장치.
  6. 제1항 내지 제5항에 있어서, 상기 보통 금속 전극의 재료가 알루미늄, 금-게루미늄 합금, 티타늄 및 텅스텐의 그룹으로부터 선택되는 반도체장치.
  7. 제6항에 있어서, 상기 전극은, 상기 반도체영역 또는 절연층에서 실리콘과 상기 보통 금속과의 반응을 방지하는 바리어 금속을 경유하여 상기 배선층에 콘택트하는 반도체장치.
  8. 제7항에 있어서, 상기 바리어 금속의 재료가 티타늄, 몰리브덴 및 티타늄 니트리드의 그룹으로부터 선택되는 반도체장치.
  9. 제1항 내지 제8항에 있어서, 산화마그네슘 막은 이산화실리콘으로된 상기 절연막상에 형성되어 있고, 상기 배선층에 콘택트하는 반도체장치.
  10. 제1항 내지 제9항에 있어서, 보통 금속으로된 배선층을 더 포함하는 반도체장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019880005422A 1987-06-18 1988-05-10 초전도체의 배선을 가지는 반도체 장치 KR920005540B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP?62-150248 1987-06-18
JP62-150248 1987-06-18
JP62150248A JPS63314850A (ja) 1987-06-18 1987-06-18 半導体装置

Publications (2)

Publication Number Publication Date
KR890001178A true KR890001178A (ko) 1989-03-18
KR920005540B1 KR920005540B1 (ko) 1992-07-06

Family

ID=15492796

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880005422A KR920005540B1 (ko) 1987-06-18 1988-05-10 초전도체의 배선을 가지는 반도체 장치

Country Status (5)

Country Link
US (1) US5001108A (ko)
EP (1) EP0295708B1 (ko)
JP (1) JPS63314850A (ko)
KR (1) KR920005540B1 (ko)
DE (1) DE3887926D1 (ko)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0282012A3 (en) * 1987-03-09 1989-09-13 Semiconductor Energy Laboratory Co., Ltd. Superconducting semiconductor device
US5274268A (en) * 1987-04-01 1993-12-28 Semiconductor Energy Laboratory Co., Ltd. Electric circuit having superconducting layered structure
CA1336149C (en) * 1987-07-06 1995-07-04 Saburo Tanaka Superconducting thin film and a method for preparing the same
JPH079905B2 (ja) * 1987-07-15 1995-02-01 シャープ株式会社 半導体装置の配線方法
CN1017110B (zh) * 1987-08-13 1992-06-17 株式会社半导体能源研究所 一种超导器件
US4837609A (en) * 1987-09-09 1989-06-06 American Telephone And Telegraph Company, At&T Bell Laboratories Semiconductor devices having superconducting interconnects
JPH01218045A (ja) * 1988-02-26 1989-08-31 Nec Corp 半導体装置
US4998157A (en) * 1988-08-06 1991-03-05 Seiko Epson Corporation Ohmic contact to silicon substrate
DE69030247D1 (de) * 1990-02-01 1997-04-24 Ibm Halbleiter-Supraleiter integrierte Schaltungstechnik
US5119706A (en) * 1990-02-12 1992-06-09 Ehrhardt Tool And Machine Company, Inc. Machine process for chamfering of precision pieces having non-linear edges device therefor
US5084437A (en) * 1990-02-28 1992-01-28 Westinghouse Electric Corp. Method for making high-current, ohmic contacts between semiconductors and oxide superconductors
EP0482556A1 (en) * 1990-10-22 1992-04-29 Nec Corporation Polysilicon resistance element and semiconductor device using the same
CA2054597C (en) * 1990-10-31 1997-08-19 Hiroshi Inada Superconducting circuit and a process for fabricating the same
US5418216A (en) * 1990-11-30 1995-05-23 Fork; David K. Superconducting thin films on epitaxial magnesium oxide grown on silicon
US5134117A (en) * 1991-01-22 1992-07-28 Biomagnetic Technologies, Inc. High tc microbridge superconductor device utilizing stepped edge-to-edge sns junction
CA2062709C (en) * 1991-03-11 1997-06-24 So Tanaka Superconducting thin film having at least one isolated superconducting region formed of oxide superconductor material and method for manufacturing the same
WO1992020108A1 (en) * 1991-05-08 1992-11-12 Superconductor Technologies, Inc. Multichip interconnect module including superconductive materials
JP2547935B2 (ja) * 1992-04-30 1996-10-30 インターナショナル・ビジネス・マシーンズ・コーポレイション 半導体集積回路の相互接続構造の形成方法
US5356474A (en) * 1992-11-27 1994-10-18 General Electric Company Apparatus and method for making aligned Hi-Tc tape superconductors
US5438022A (en) 1993-12-14 1995-08-01 At&T Global Information Solutions Company Method for using low dielectric constant material in integrated circuit fabrication
DE69518242T2 (de) * 1994-06-03 2001-01-25 E.I. Du Pont De Nemours And Co., Wilmington Fluorploymer-schutzschicht für hochtemperatursupraleitende schicht und photostruktur davon
US5854132A (en) * 1994-11-29 1998-12-29 Advanced Micro Devices, Inc. Method for exposing photoresist
JP2001028425A (ja) * 1999-07-15 2001-01-30 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP4495426B2 (ja) * 2003-08-29 2010-07-07 独立行政法人科学技術振興機構 超伝導膜およびその製造方法
DE10353110B4 (de) * 2003-11-12 2006-02-16 Delta Engineering Gmbh Aktorplattform zur Führung von medizinischen Instrumenten bei minimal invasiven Interventionen
JP4186970B2 (ja) * 2005-06-30 2008-11-26 セイコーエプソン株式会社 集積回路装置及び電子機器
JP4661400B2 (ja) * 2005-06-30 2011-03-30 セイコーエプソン株式会社 集積回路装置及び電子機器
JP4151688B2 (ja) * 2005-06-30 2008-09-17 セイコーエプソン株式会社 集積回路装置及び電子機器
JP4010335B2 (ja) * 2005-06-30 2007-11-21 セイコーエプソン株式会社 集積回路装置及び電子機器
JP4010336B2 (ja) * 2005-06-30 2007-11-21 セイコーエプソン株式会社 集積回路装置及び電子機器
JP4010334B2 (ja) * 2005-06-30 2007-11-21 セイコーエプソン株式会社 集積回路装置及び電子機器
US20070001984A1 (en) * 2005-06-30 2007-01-04 Seiko Epson Corporation Integrated circuit device and electronic instrument
JP4830371B2 (ja) 2005-06-30 2011-12-07 セイコーエプソン株式会社 集積回路装置及び電子機器
JP4586739B2 (ja) * 2006-02-10 2010-11-24 セイコーエプソン株式会社 半導体集積回路及び電子機器
US9865795B1 (en) * 2016-09-30 2018-01-09 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Process for fabrication of superconducting vias for electrical connection to groundplane in cryogenic detectors

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2543741B1 (fr) * 1983-03-16 1985-06-14 Comp Generale Electricite Procede de fabrication de supraconducteurs
JPH0648733B2 (ja) * 1984-01-25 1994-06-22 株式会社日立製作所 極低温用半導体装置
JPS60189268A (ja) * 1984-03-08 1985-09-26 Fujitsu Ltd 半導体装置
JPS616882A (ja) * 1984-06-21 1986-01-13 Agency Of Ind Science & Technol 超電導集積回路の端子電極とその製造方法
JPS61164271A (ja) * 1985-01-17 1986-07-24 Nec Corp 電界効果型トランジスタの製造方法
JPH0710007B2 (ja) * 1985-03-04 1995-02-01 株式会社日立製作所 超電導トランジスタ集積回路
JPS63308975A (ja) * 1987-06-11 1988-12-16 Toshiba Corp 電流制御素子
JPH079905B2 (ja) * 1987-07-15 1995-02-01 シャープ株式会社 半導体装置の配線方法
CN1017110B (zh) * 1987-08-13 1992-06-17 株式会社半导体能源研究所 一种超导器件
US4837609A (en) * 1987-09-09 1989-06-06 American Telephone And Telegraph Company, At&T Bell Laboratories Semiconductor devices having superconducting interconnects
NL8800857A (nl) * 1988-04-05 1989-11-01 Philips Nv Inrichting en werkwijze voor het vervaardigen van een inrichting.

Also Published As

Publication number Publication date
DE3887926D1 (de) 1994-03-31
JPS63314850A (ja) 1988-12-22
KR920005540B1 (ko) 1992-07-06
EP0295708B1 (en) 1994-02-23
EP0295708A3 (en) 1989-09-06
EP0295708A2 (en) 1988-12-21
US5001108A (en) 1991-03-19

Similar Documents

Publication Publication Date Title
KR890001178A (ko) 초전도재의 배선을 가지는 반도체장치
KR880004551A (ko) 반도체 장치
KR890007386A (ko) 반도체 장치 및 그 제조방법
KR920020620A (ko) 반도체 집적회로장치의 배선접속구조 및 그 제조방법
KR970023857A (ko) 알루미늄 배선부를 갖는 반도체 장치 및 그 제조방법
KR900017136A (ko) 반도체장치
KR880013239A (ko) 반도체소자의 접속구멍형성 방법
KR900019264A (ko) 분리 금속 플레이트 캐패시터 및 이의 제조방법
KR920017184A (ko) 반도체 장치의 제조방법
KR890004401A (ko) 알루미늄-실리콘 합금층을 갖는 반도체층 구조
KR900005589A (ko) 반도체 집적회로 장치 및 그 제조방법
KR940010276A (ko) 반도체소자의 금속배선
KR890012363A (ko) 반도체 소자 제조방법
KR840002162A (ko) 반도체 장치(半導體裝置)
GB1243247A (en) Ohmic contact and electrical interconnection system for electronic devices
KR910019178A (ko) 반도체 접촉 구조 및 그 접촉 방법
KR870004504A (ko) 반도체 장치 및 그 제조방법
KR960027004A (ko) 반도체 장치의 측면콘택 형성방법
KR930022523A (ko) 반도체장치
KR950012701A (ko) 박막 저항체를 갖는 반도체 장치
KR970008418A (ko) 에칭으로부터 비아 홀을 보호하기 위한 보호층을 포함하는 반도체 장치
KR970072313A (ko) 반도체 금속박막의 배선방법
KR870007567A (ko) 반도체장치의 제조방법
KR980005554A (ko) 반도체 소자의 금속 배선 형성방법
KR890008963A (ko) 반도체 장치의 접속구조

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E902 Notification of reason for refusal
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20040624

Year of fee payment: 13

LAPS Lapse due to unpaid annual fee