KR890001178A - 초전도재의 배선을 가지는 반도체장치 - Google Patents

초전도재의 배선을 가지는 반도체장치 Download PDF

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Publication number
KR890001178A
KR890001178A KR1019880005422A KR880005422A KR890001178A KR 890001178 A KR890001178 A KR 890001178A KR 1019880005422 A KR1019880005422 A KR 1019880005422A KR 880005422 A KR880005422 A KR 880005422A KR 890001178 A KR890001178 A KR 890001178A
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South Korea
Prior art keywords
semiconductor device
wiring layer
semiconductor
metal
contacts
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KR1019880005422A
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English (en)
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KR920005540B1 (ko
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마사오 다꾸찌
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야마모도 다꾸마
후지쓰 가부시끼가이샤
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Publication of KR890001178A publication Critical patent/KR890001178A/ko
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Publication of KR920005540B1 publication Critical patent/KR920005540B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53285—Conductive materials containing superconducting materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

내용 없음

Description

초전도재의 배선을 가지는 반도체장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 그 위에 초전도재의 총 배선을 가지는 반도체장치의 단면도.
제2도는 그 위에 초전도재의 총 배선을 가지는 다른 반도체장치의 단면도.
제3도는 본 발명의 원리를 모식적으로 설명하는 도.

Claims (10)

  1. 그 위에 다수의 반도체 영역들을 형성한 반도체 기판과, 절연막에 의하여 상기 반도체 기판과 절연되는, 초전도체로 된 배선층과, 상기 반도체 영역을 상기 초전도 배선층에 접속하기 위하여 상기 반도체 영역중의 하나 위에 있고, 적어도 상기 배선층의 측벽에서 콘택트하는, 보통 금속으로된 전극과로 이루어져 있는 반도체장치.
  2. 제1항에 있어서, 상기 배선층이 주로 상기 배선층의 증착 평면에 평행한 방향에서 이방성 초전도체인 반도체장치.
  3. 제1항에 있어서, 상기 전극이 상기 배선층상에 있는 창 호올의 내벽에서 상기 배선층에 콘택트하는 반도체장치.
  4. 제1항 내지 제3항에 있어서, 상기 초전도체가 산화금속을 함유하는 반도체장치.
  5. 제4항에 있어서, 상기 초전도체가 산화구리를 함유하는 반도체장치.
  6. 제1항 내지 제5항에 있어서, 상기 보통 금속 전극의 재료가 알루미늄, 금-게루미늄 합금, 티타늄 및 텅스텐의 그룹으로부터 선택되는 반도체장치.
  7. 제6항에 있어서, 상기 전극은, 상기 반도체영역 또는 절연층에서 실리콘과 상기 보통 금속과의 반응을 방지하는 바리어 금속을 경유하여 상기 배선층에 콘택트하는 반도체장치.
  8. 제7항에 있어서, 상기 바리어 금속의 재료가 티타늄, 몰리브덴 및 티타늄 니트리드의 그룹으로부터 선택되는 반도체장치.
  9. 제1항 내지 제8항에 있어서, 산화마그네슘 막은 이산화실리콘으로된 상기 절연막상에 형성되어 있고, 상기 배선층에 콘택트하는 반도체장치.
  10. 제1항 내지 제9항에 있어서, 보통 금속으로된 배선층을 더 포함하는 반도체장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019880005422A 1987-06-18 1988-05-10 초전도체의 배선을 가지는 반도체 장치 KR920005540B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP?62-150248 1987-06-18
JP62150248A JPS63314850A (ja) 1987-06-18 1987-06-18 半導体装置
JP62-150248 1987-06-18

Publications (2)

Publication Number Publication Date
KR890001178A true KR890001178A (ko) 1989-03-18
KR920005540B1 KR920005540B1 (ko) 1992-07-06

Family

ID=15492796

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880005422A KR920005540B1 (ko) 1987-06-18 1988-05-10 초전도체의 배선을 가지는 반도체 장치

Country Status (5)

Country Link
US (1) US5001108A (ko)
EP (1) EP0295708B1 (ko)
JP (1) JPS63314850A (ko)
KR (1) KR920005540B1 (ko)
DE (1) DE3887926D1 (ko)

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CN1017110B (zh) * 1987-08-13 1992-06-17 株式会社半导体能源研究所 一种超导器件
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JPH01218045A (ja) * 1988-02-26 1989-08-31 Nec Corp 半導体装置
US4998157A (en) * 1988-08-06 1991-03-05 Seiko Epson Corporation Ohmic contact to silicon substrate
EP0439750B1 (en) * 1990-02-01 1997-03-19 International Business Machines Corporation Semiconductor superconductor integrated circuit technology
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JP4010334B2 (ja) * 2005-06-30 2007-11-21 セイコーエプソン株式会社 集積回路装置及び電子機器
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Also Published As

Publication number Publication date
EP0295708A2 (en) 1988-12-21
EP0295708A3 (en) 1989-09-06
EP0295708B1 (en) 1994-02-23
US5001108A (en) 1991-03-19
DE3887926D1 (de) 1994-03-31
KR920005540B1 (ko) 1992-07-06
JPS63314850A (ja) 1988-12-22

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