KR890004401A - 알루미늄-실리콘 합금층을 갖는 반도체층 구조 - Google Patents

알루미늄-실리콘 합금층을 갖는 반도체층 구조 Download PDF

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Publication number
KR890004401A
KR890004401A KR1019880010768A KR880010768A KR890004401A KR 890004401 A KR890004401 A KR 890004401A KR 1019880010768 A KR1019880010768 A KR 1019880010768A KR 880010768 A KR880010768 A KR 880010768A KR 890004401 A KR890004401 A KR 890004401A
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KR
South Korea
Prior art keywords
aluminum
silicon
alloy layer
silicon alloy
layer
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Application number
KR1019880010768A
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English (en)
Inventor
기요시 와따나베
Original Assignee
야마모도 다꾸마
후지쓰 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 야마모도 다꾸마, 후지쓰 가부시끼가이샤 filed Critical 야마모도 다꾸마
Publication of KR890004401A publication Critical patent/KR890004401A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/47—Schottky barrier electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
    • H01L23/53223—Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

내용 없음

Description

알루미늄-실리콘 합금층을 갖는 반도체층구조
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 바람직한 실시예의 단면도, 제2도는 Al-Si합금층의 Si농도와 쇼트키 장벽높이의 관계를 도시한 도면, 제3도는 본 발명의 다른 바람직한 실시예의 단면도.

Claims (2)

  1. 실리콘 기판; 실리콘 기판상에 형성되며, 함유되는 실리콘의 농도가 10내지 75중량 퍼센트 범위내에 있는 알루미늄 및 실리콘의 합금층; 알루미늄-실리콘 합금층의 상부에 형성되는 장벽층; 및 장벽층의 상부에 형성되는 금속층으로 구성되는 것을 특징으로 하는 반도체층 구조.
  2. 실리콘 기판; 실리콘 기판상에 형성되며, 함유되는 실리콘의 농도가 10내지 75중량 퍼센트 범위내에 있는 알루미늄 및 실리콘의 제1합금층; 알루미늄 및 실리콘 합금층의 상부에 형성되는 장벽층; 및 장벽층의 상부에 형성되며 함유되는 알루미늄의 농도가 제1합금층에 함유된 알루미늄의 농도보다 큰 알루미늄의 제2합금층으로 구성되는 것을 특징으로 하는 반도체층 구조.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019880010768A 1987-08-28 1988-08-24 알루미늄-실리콘 합금층을 갖는 반도체층 구조 KR890004401A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP21283787 1987-08-28
JP?62-212837 1987-08-28

Publications (1)

Publication Number Publication Date
KR890004401A true KR890004401A (ko) 1989-04-21

Family

ID=16629169

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880010768A KR890004401A (ko) 1987-08-28 1988-08-24 알루미늄-실리콘 합금층을 갖는 반도체층 구조

Country Status (4)

Country Link
US (1) US4987562A (ko)
EP (1) EP0305296B1 (ko)
KR (1) KR890004401A (ko)
DE (1) DE3869519D1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101230762B1 (ko) * 2003-04-30 2013-02-06 크리 인코포레이티드 대향 표면들과 결합된 전기적 콘택들을 구비하는 활성영역을 갖는 발광소자 및 그 형성방법

Families Citing this family (19)

* Cited by examiner, † Cited by third party
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JP2680468B2 (ja) * 1989-07-01 1997-11-19 株式会社東芝 半導体装置および半導体装置の製造方法
JPH07109829B2 (ja) * 1989-11-20 1995-11-22 三菱電機株式会社 半導体装置の製造方法
JPH0430516A (ja) * 1990-05-28 1992-02-03 Canon Inc 半導体装置及びその製造方法
US5268329A (en) * 1990-05-31 1993-12-07 At&T Bell Laboratories Method of fabricating an integrated circuit interconnection
JP2598335B2 (ja) * 1990-08-28 1997-04-09 三菱電機株式会社 半導体集積回路装置の配線接続構造およびその製造方法
TW520072U (en) * 1991-07-08 2003-02-01 Samsung Electronics Co Ltd A semiconductor device having a multi-layer metal contact
JP3401843B2 (ja) * 1993-06-21 2003-04-28 ソニー株式会社 半導体装置における多層配線の形成方法
JPH0730095A (ja) * 1993-06-25 1995-01-31 Mitsubishi Electric Corp 半導体装置及びその製造方法
US5561083A (en) * 1994-12-29 1996-10-01 Lucent Technologies Inc. Method of making multilayered Al-alloy structure for metal conductors
KR970052186A (ko) * 1995-12-04 1997-07-29 김주용 반도체 소자 제조 방법
US6025264A (en) * 1998-02-09 2000-02-15 United Microelectronics Corp. Fabricating method of a barrier layer
US6121126A (en) * 1998-02-25 2000-09-19 Micron Technologies, Inc. Methods and structures for metal interconnections in integrated circuits
US6815303B2 (en) * 1998-04-29 2004-11-09 Micron Technology, Inc. Bipolar transistors with low-resistance emitter contacts
AU2003292462A1 (en) * 2002-12-23 2004-07-14 Agency For Science, Technology And Reasearch Electronic device and use thereof
JP2006024829A (ja) * 2004-07-09 2006-01-26 Toshiba Corp 半導体装置及びその製造方法
WO2011004469A1 (ja) * 2009-07-08 2011-01-13 トヨタ自動車株式会社 半導体装置とその製造方法
JP6269276B2 (ja) * 2014-04-11 2018-01-31 豊田合成株式会社 半導体装置、半導体装置の製造方法
JP6897141B2 (ja) * 2017-02-15 2021-06-30 株式会社デンソー 半導体装置とその製造方法
JP7027066B2 (ja) * 2017-08-24 2022-03-01 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法

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JPS5149767A (ja) * 1974-10-28 1976-04-30 Nissin Electric Co Ltd Isokei
US4316209A (en) * 1979-08-31 1982-02-16 International Business Machines Corporation Metal/silicon contact and methods of fabrication thereof
JPS58103168A (ja) * 1981-12-16 1983-06-20 Fujitsu Ltd 半導体装置
JPS59124765A (ja) * 1982-12-29 1984-07-18 Fujitsu Ltd 半導体装置
JPS59175763A (ja) * 1983-03-25 1984-10-04 Fujitsu Ltd 半導体装置
JPS6020568A (ja) * 1983-07-15 1985-02-01 Hitachi Ltd 半導体装置
JPS60187042A (ja) * 1984-03-06 1985-09-24 Seiko Epson Corp 半導体装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101230762B1 (ko) * 2003-04-30 2013-02-06 크리 인코포레이티드 대향 표면들과 결합된 전기적 콘택들을 구비하는 활성영역을 갖는 발광소자 및 그 형성방법

Also Published As

Publication number Publication date
DE3869519D1 (de) 1992-04-30
EP0305296A1 (en) 1989-03-01
EP0305296B1 (en) 1992-03-25
US4987562A (en) 1991-01-22

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