KR870004502A - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR870004502A
KR870004502A KR1019860004893A KR860004893A KR870004502A KR 870004502 A KR870004502 A KR 870004502A KR 1019860004893 A KR1019860004893 A KR 1019860004893A KR 860004893 A KR860004893 A KR 860004893A KR 870004502 A KR870004502 A KR 870004502A
Authority
KR
South Korea
Prior art keywords
semiconductor devices
aluminum wiring
layers
psg
buried
Prior art date
Application number
KR1019860004893A
Other languages
English (en)
Other versions
KR900001659B1 (ko
Inventor
도요하루 오오하시
Original Assignee
미쓰비시 뎅기 가부시끼가이샤 내
시기 모리야
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 미쓰비시 뎅기 가부시끼가이샤 내, 시기 모리야 filed Critical 미쓰비시 뎅기 가부시끼가이샤 내
Publication of KR870004502A publication Critical patent/KR870004502A/ko
Application granted granted Critical
Publication of KR900001659B1 publication Critical patent/KR900001659B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528—Geometry or layout of the interconnection structure
    • H01L23/5283—Cross-sectional geometry
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

내용 없음

Description

반도체 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 1실시예의 단면도.
제2도는 제1도의 횡단면도.
* 도면의 주요부분에 대한 부호의 설명
1 : 하층 알루미늄배선 2 : PSG층
3 : 상층 알루미늄배선 4 : 반도체 기판
5 : 패시베이숀 막

Claims (1)

  1. 패시베이숀크랙을 발생한 때의 알루미늄배선의 절단을 방지하기 위하여 알루미늄배선을 상(2), 하(1)의 2층으로 나누고, 하층(1)을 PSG(3)내에 묻음과 동시에 이 2층의 알루미늄 배선(2)을 간격을 두고 연결하는 것을 특징으로 하는 반도체 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019860004893A 1985-10-16 1986-06-19 반도체 장치 KR900001659B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP231715 1985-10-16
JP60231715A JPS6290950A (ja) 1985-10-16 1985-10-16 半導体装置
JP60-231715 1985-10-16

Publications (2)

Publication Number Publication Date
KR870004502A true KR870004502A (ko) 1987-05-09
KR900001659B1 KR900001659B1 (ko) 1990-03-17

Family

ID=16927878

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019860004893A KR900001659B1 (ko) 1985-10-16 1986-06-19 반도체 장치

Country Status (4)

Country Link
JP (1) JPS6290950A (ko)
KR (1) KR900001659B1 (ko)
DE (1) DE3635259A1 (ko)
GB (1) GB2181894B (ko)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2584986B2 (ja) * 1987-03-10 1997-02-26 三菱電機株式会社 半導体装置の配線構造
JPS63283040A (ja) * 1987-05-15 1988-11-18 Toshiba Corp 半導体装置
EP0394520A1 (de) * 1989-04-26 1990-10-31 Richard Nicolaus Verfahren zum Abtrennen von Rollenmaterialabschnitten von einem Rollenmaterial sowie Vorrichtung zur Durchführung dieses Verfahrens
JPH05283467A (ja) * 1992-03-30 1993-10-29 Nec Corp 半導体集積回路装置
EP0953983A3 (en) * 1996-03-01 2005-10-05 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device with clamping circuit for preventing malfunction
EP0793176B1 (en) * 1996-03-01 1999-06-02 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device capable of preventing malfunction due to disconnection of word select line

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3518506A (en) * 1967-12-06 1970-06-30 Ibm Semiconductor device with contact metallurgy thereon,and method for making same
GB1596907A (en) * 1978-05-25 1981-09-03 Fujitsu Ltd Manufacture of semiconductor devices
JPS55120150A (en) * 1979-03-09 1980-09-16 Toshiba Corp Semiconductor device
DE3173506D1 (en) * 1980-09-22 1986-02-27 Toshiba Kk Semiconductor device and its manufacture
JPS594050A (ja) * 1982-06-30 1984-01-10 Fujitsu Ltd 半導体装置
US4617193A (en) * 1983-06-16 1986-10-14 Digital Equipment Corporation Planar interconnect for integrated circuits

Also Published As

Publication number Publication date
DE3635259A1 (de) 1987-04-16
GB2181894B (en) 1989-09-13
KR900001659B1 (ko) 1990-03-17
GB2181894A (en) 1987-04-29
JPS6290950A (ja) 1987-04-25
GB8624497D0 (en) 1986-11-19

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