KR970023857A - 알루미늄 배선부를 갖는 반도체 장치 및 그 제조방법 - Google Patents

알루미늄 배선부를 갖는 반도체 장치 및 그 제조방법 Download PDF

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KR970023857A
KR970023857A KR1019960046188A KR19960046188A KR970023857A KR 970023857 A KR970023857 A KR 970023857A KR 1019960046188 A KR1019960046188 A KR 1019960046188A KR 19960046188 A KR19960046188 A KR 19960046188A KR 970023857 A KR970023857 A KR 970023857A
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aluminum
titanium
semiconductor device
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고이치 구스야마
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하나와 요시카즈
닛산 지도샤 가부시키가이샤
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Abstract

알루미늄 배선을 (111) 방향 티탄 알루미늄막과 (111) 방향 알루미늄막 내지는 (111) 방향 티탄 알루미늄막과 (111) 방향 알루미늄 합금막의 2층 구조로 함으로써, 일렉트로 마이그레이션(electro migration) 내성이 높은 고 (111) 방향의 알루미늄 배선을 갖는 신뢰성이 높은 반도체 장치 및 제조 방법을 제공한다.
반도체 기판상에 절연막을 통하여 (111) 방향을 가지는 티탄 알루미늄막과, 이 티탄 알루미늄막상에 에피택셜 성장(epitaxial growth)시킨 (111) 방향을 가지는 알루미늄막, 또는 알루미늄 합금막으로 이루어지는 도체층을 형성한 알루미늄 배선부를 갖는 반도체 장치를 제공한다. 이러한 구조로 함으로써, 알쿠미늄배선의 일렉트로 마이그레이션 내성을 향상시킬 수 있어서, 신뢰성이 높은 반도체 장치의 배선 구조를 실현할 수 있다.

Description

알루미늄 배선부를 갖는 반도체 장치 및 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
도1은 본 발명의 제1실시 형태로 예시한 반도체 장치의 알루미늄 배선 구조의 일례를 도시하는 모식도.

Claims (7)

  1. 반도체 기판상에 절연막을 통하여 적어도 (111) 방향을 가지는 티탄 알루미늄막과, 이 티탄 알루미늄막상에 에피택셜 성장한 (111) 방향을 가지는 알루미늄막, 또는 알루미늄 합금막으로 이루어지는 도체층을 형성한 것을 특징으로 하는 알루미늄 배선부를 갖는 반도체 장치.
  2. 제1항에 있어서, 절연막과 티탄 알루미늄막 사이에 티탄막을 설치한 것을 특징으로 하는 알루미늄 배선부를 갖는 반도체 장치.
  3. 제1항에 있어서, 절연막과 티탄 알루미늄막 사이에 질화 티탄막으로 이루어지는 단층막 또는 질화 티탄막과 티탄막으로 이루어지는 2층막을 설치한 것을 특징으로 하는 알루미늄 배선부를 갖는 반도체 장치.
  4. 제2항에 있어서, 절연막과 티탄 알루미늄막 사이에 질화 티탄막으로 이루어지는 단층막 또는 질화 티탄막과 티탄막으로 이루어지는 2층막을 설치한 것을 특징으로 하는 알루미늄 배선부를 갖는 반도체 장치.
  5. 알루미늄 배선부를 갖는 반도체 장치의 제조 방법에 있어서, 반도체 기판상에 절연막을 형성하는 공정과, 상기 절연막상에 직접 또는 티탄막을 통하여 (111) 방향을 가지는 티탄 알루미늄막을 형성하는 공정과, 상기 티탄 알루미늄막상에 (111) 방향을 가지는 알루미늄막, 또는 알루미늄 합금막을 에피택셜 성장시키는 공정을 적어도 포함하는 것을 특징으로 하는 알루미늄 배선부를 갖는 반도체 장치의 제조 방법.
  6. 알루미늄 배선부를 갖는 반도체 장치의 제조 방법에 있어서, 반도체 기판상에 절연막을 형성하는 공정과, 상기 절연막상에 티탄막을 형성하는 공정과, 상기 티탄막상에 기판온도 260℃이상으로 알루미늄막을 형성함으로써 상기 티탄막과 알루미늄막을 합금화 반응시켜 (111) 방향을 가지는 티탄 알루미늄막을 형성하는 공정과, 상기 티탄 알루미늄막상에 (111) 방향을 가지는 알루미늄막 또는 알루미늄 합금을 에피택셜 성장시키는 공정을 적어도 포함하는 것을 특징으로 하는 알루미늄 배선부를 갖는 반도체 장치의 제조 방법.
  7. 알루미늄 배선부를 갖는 반도체 장치의 제조 방법에 있어서, 반도체 기판상에 절연막을 형성하는 공정과 상기 절연막상에 질화 티탄막 또는 질화 티탄막과 티탄막으로 이루어지는 2층막을 형성하는 공정과, 상기 질화 티탄막 또는 질화 티탄막과 티탄막으로 이루어지는 2층막상에 (111) 방향을 가지는 티탄 알루미늄막을 형성하는 공정과 상기 티탄 알루미늄막상에 (111) 방향을 가지는 알루미늄막 또는 알루미늄 합금막을 에피택셜 성장시키는 공정을 적어도 포함하는 것을 특징으로 하는 알루미늄 배선부를 갖는 반도체 장치의 제조 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960046188A 1995-10-17 1996-10-16 알루미늄 배선부를 갖는 반도체 장치 및 그 제조방법 KR970023857A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP7268172A JPH09115829A (ja) 1995-10-17 1995-10-17 アルミニウム配線部を有する半導体装置およびその製造方法
JP95-268172 1995-10-17

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GB9621415D0 (en) 1996-12-04
DE19642740A1 (de) 1997-04-24
GB2306774B (en) 1997-12-17
US5869901A (en) 1999-02-09
GB2306774A (en) 1997-05-07
JPH09115829A (ja) 1997-05-02

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