KR870002645A - 반도체장치의 제조방법 - Google Patents

반도체장치의 제조방법 Download PDF

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Publication number
KR870002645A
KR870002645A KR1019860005855A KR860005855A KR870002645A KR 870002645 A KR870002645 A KR 870002645A KR 1019860005855 A KR1019860005855 A KR 1019860005855A KR 860005855 A KR860005855 A KR 860005855A KR 870002645 A KR870002645 A KR 870002645A
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South Korea
Prior art keywords
melting point
high melting
point metal
gas
manufacturing
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KR1019860005855A
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English (en)
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KR900001654B1 (ko
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렘페이 나까다
Original Assignee
가부시끼가이샤 도오시바
와타리 스기이찌로
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Publication of KR870002645A publication Critical patent/KR870002645A/ko
Application granted granted Critical
Publication of KR900001654B1 publication Critical patent/KR900001654B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
    • H01L23/53223—Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

내용 없음

Description

반도체장치의 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1(c)도는 본 발명의 1실시예의 제작공정도.
제2(c)도는 다른 실시예의 제작공정도.
제4도는 W의 포화막 두께와 퇴적온도의 관계를 나타낸 측정데이터.
* 도면의 주요부분에 대한 부호의 설명
11 : P형 Si기판 12 : n+gid 확산층(전극 배선층)
13 : 산화막 14 : 접속구
15, 17 : W막 16 : Al 배선

Claims (3)

  1. 확산층 또는 전극 배선층(12)중 최소한 한쪽이 형성된 반도체기판(11)에 절연막(13)을 형성하는 공정과, 상기 절연막(13)에 상기 확산층 또는 전극배선층(12)에 대한 접속구(14)를 형성하는 공정, 상기 접속구(14)내에 선택기상성장법에 의해 고융점금속막(15)을 매립하는 공정, 매립된 고융점금속막(15)에 접속되는 배선(16)을 형성하는 공정을 구비한 반도체장치의 제조방법에 있어서, 상기 고융점금속막(15)의 선택기상성장공정은 최소한 성장초기의 조건으로서 기판온도 500∼600℃, 반응로 내의 압력 0.01∼1torr, 고융점 금속화합물 가스분압 0.001∼0.5torr로 설정된 것을 특징으로 하는 반도체 장치의 제조방법.
  2. 제1항에 있어서, 고융점 금속화합물가스가 불활성가스 또는 수소가스에 의해 희석된 고융점금속 불화물가스인 것을 특징으로 하는 반도체 장치의 제조방법.
  3. 제1항에 있어서, 고융점금속막(15)의 선택기상 성장공정은 금속불화물 가스와 불활성가스를 이용한 초기조건을 만족시키는 제1의 성장공정과, 이것에 있따라 금속불화물가스와 수소가스를 이용한 제2의 성장공정으로 된 것을 특징으로 하는 반도체 장치의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019860005855A 1985-08-02 1986-07-19 반도체장치의 제조방법 KR900001654B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP60170764A JPS6231116A (ja) 1985-08-02 1985-08-02 半導体装置の製造方法
JP60-170764 1985-08-02

Publications (2)

Publication Number Publication Date
KR870002645A true KR870002645A (ko) 1987-04-06
KR900001654B1 KR900001654B1 (ko) 1990-03-17

Family

ID=15910942

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019860005855A KR900001654B1 (ko) 1985-08-02 1986-07-19 반도체장치의 제조방법

Country Status (4)

Country Link
US (1) US5071789A (ko)
JP (1) JPS6231116A (ko)
KR (1) KR900001654B1 (ko)
DE (1) DE3625860A1 (ko)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5643310A (en) * 1979-09-19 1981-04-22 Sumitomo Naugatuck Co Ltd Production of copolymer latex
EP0319214A1 (en) * 1987-12-04 1989-06-07 AT&T Corp. Method for making semiconductor integrated circuits using selective tungsten deposition
FR2624304B1 (fr) * 1987-12-04 1990-05-04 Philips Nv Procede pour etablir une structure d'interconnexion electrique sur un dispositif semiconducteur au silicium
US5055423A (en) * 1987-12-28 1991-10-08 Texas Instruments Incorporated Planarized selective tungsten metallization system
EP0326956A3 (en) * 1988-02-02 1991-03-13 National Semiconductor Corporation Method for connecting devices on an integrated circuit substrate to a metallization layer
FR2630587A1 (fr) * 1988-04-22 1989-10-27 Philips Nv Procede pour etablir des contacts electriques de petites dimensions sur un dispositif semiconducteur
JPH01298765A (ja) * 1988-05-27 1989-12-01 Fujitsu Ltd 半導体装置及びその製造方法
US5202287A (en) * 1989-01-06 1993-04-13 International Business Machines Corporation Method for a two step selective deposition of refractory metals utilizing SiH4 reduction and H2 reduction
US5110760A (en) * 1990-09-28 1992-05-05 The United States Of America As Represented By The Secretary Of The Navy Method of nanometer lithography
KR950012918B1 (ko) * 1991-10-21 1995-10-23 현대전자산업주식회사 선택적 텅스텐 박막의 2단계 퇴적에 의한 콘택 매립방법
US5227336A (en) * 1991-12-27 1993-07-13 Small Power Communication Systems Research Laboratories Co., Ltd. Tungsten chemical vapor deposition method
JP3326698B2 (ja) * 1993-03-19 2002-09-24 富士通株式会社 集積回路装置の製造方法
DE4417966A1 (de) * 1994-05-21 1995-11-23 Fraunhofer Ges Forschung Verfahren zur modularen Kontaktierung mehrlagiger Halbleiterbauelemente
US5484747A (en) * 1995-05-25 1996-01-16 United Microelectronics Corporation Selective metal wiring and plug process
JPH0922896A (ja) * 1995-07-07 1997-01-21 Toshiba Corp 金属膜の選択的形成方法
JPH09139429A (ja) * 1995-11-10 1997-05-27 Nippon Steel Corp 半導体装置の製造方法
JPH1064848A (ja) * 1996-08-13 1998-03-06 Toshiba Corp 半導体装置の製造装置および製造方法
US8722417B2 (en) * 2003-04-28 2014-05-13 Invoy Technologies, L.L.C. Thermoelectric sensor for analytes in a fluid and related method

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS543480A (en) * 1977-06-09 1979-01-11 Fujitsu Ltd Manufacture of semiconductor device
JPS5948952B2 (ja) * 1981-03-23 1984-11-29 富士通株式会社 金属薄膜の形成方法
JPS5928360A (ja) * 1982-08-10 1984-02-15 Nec Corp 半導体装置の製造方法
JPS5961446A (ja) * 1982-09-30 1984-04-07 Toshiba Corp 超電導回転子の電磁ダンパ−シ−ルドおよびその製造方法
JPS5984576A (ja) * 1982-11-08 1984-05-16 Nec Corp 半導体装置の製造方法
JPS5963745A (ja) * 1983-06-06 1984-04-11 Nec Corp 半導体装置
JPS6050920A (ja) * 1983-08-30 1985-03-22 Toshiba Corp 半導体装置の製造方法
JPS60138940A (ja) * 1983-12-27 1985-07-23 Toshiba Corp 半導体装置の製造方法
JPS60186038A (ja) * 1984-03-05 1985-09-21 Fujitsu Ltd 半導体装置
JPS60229350A (ja) * 1984-04-27 1985-11-14 Toshiba Corp 半導体装置の製造方法
JPS615580A (ja) * 1984-06-19 1986-01-11 Toshiba Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS6231116A (ja) 1987-02-10
KR900001654B1 (ko) 1990-03-17
US5071789A (en) 1991-12-10
DE3625860A1 (de) 1987-02-12

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