KR860000720A - 반도체 장치와 그 제조방법 - Google Patents

반도체 장치와 그 제조방법 Download PDF

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KR860000720A
KR860000720A KR1019850004198A KR850004198A KR860000720A KR 860000720 A KR860000720 A KR 860000720A KR 1019850004198 A KR1019850004198 A KR 1019850004198A KR 850004198 A KR850004198 A KR 850004198A KR 860000720 A KR860000720 A KR 860000720A
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layer
semiconductor device
minutes
manufacturing
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KR1019850004198A
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캄리벨 어탄 (외 3)
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오레그 이·엘버
아메리칸 텔리폰 앤드 텔레그라프 캄파니
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Publication of KR860000720A publication Critical patent/KR860000720A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/902—Capping layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/944—Shadow

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Led Devices (AREA)

Abstract

내용 없음

Description

반도체 장치와 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
도면은 본 발명의 일실시예에 따른 LED(발광다이오드)에 대한 개략적 횡단면도.
* 도면의 부호에 대한 설명
10:단결정기판 22,26:클래딩층 24:활성층 28:접촉편이층 30,32:접점 34:유전층 35:금속점착코팅 36:금속패드 38:결합층

Claims (16)

  1. In 기본 3족-5족 화합물 반도체층상에 저특정접촉 저항값의 전기 접점을 형성하는 단계를 포함하는 반도체 장치 제조방법으로서, (가) 상기 In 기본층상에 기본적으로 Pt만으로 이루어진 박층을 증착하고, (나) 환원분위기에서 약 450 내지 525℃의 온도로 약 5분 내지 30분동안 상기 층을 규화하는 단계를 포함하는 것을 특징으로 하는 반도체 장치 제조방법.
  2. 제1항에 있어서, Pt층의 두께가 약 100Å 내지 2000Å인것을 특징으로 하는 반도체 장치 제조방법.
  3. 제2항에 있어서, Pt층의 전자빔 증착에 의해 형성되는 것을 특징으로 하는 반도체 장치 제조방법.
  4. 제1항 내지 제3항에 있어서, In기본층은 P형 InGaAsP를 포함하는 것을 특징으로하는 반도체 장치 제조방법.
  5. 제1항 내지 제3항에 있어서, In기본층은 P형 InGaAs를 포함하는 것을 특징으로 하는 반도체 장치 제조방법.
  6. 제4항에 있어서, 특정접촉저항은 약 1×10-5Ωㆍ㎠이고, 상기 규화단계 (나)는 약 500℃에서약 15분 내지 약 30분 동안 발생하는 것을 특징으로 하는 반도체 장치 제조방법.
  7. 제1항내지 6항에 있어서, 상기 장치는 발광다이오드를 포함하는 것을 특징으로 하는 반도체 장치 제조방법
  8. 제1항 내지 제6항중 어느 항에 있어서, 상기 장치는 레이저를 포함하는 것으 특징으로 하는 반도체 장치 제조방법.
  9. In 기본 3족-5족 화합물 반도체층상에 저특정 접촉 저항값의 전기 접점을 포함하는 장치의 제조에 관한 제1항에 따른 방법으로서, (가) InGaAsP와 InGaAs 로 구성된 집단에서부터 선택된 P형 반도체 조성물로서 상기 In 기본층을 에피택셜법으로 성장시키고, (나) 샤도우 마스크를 통하여 상기 In 기본층의 제한된 부분상에 약 100내지 2000Å의 두께로 기본적으로 단지 Pt로만 이루어진 박층을 전자빔 증착시키며, (다) 휘발성 소자의 외부확산을 방지하기 위하여 상기 In 기본층을 씌우며, (라) 환원분위기에서 약 450 내지 525℃의 온도에서 약 5분 내지 30분동안 상기 층을 규화시키는 단계를 포함하는 것을 특징으로 하는 반도체 장치 제조방법.
  10. 제9항에 있어서, 상기 전기접점은 약 1 내지 2×10-5Ωㆍ㎠의 특정 접촉 저항값을 갖는 것을 특징으로 하는 반도체 장치 제조방법.
  11. 제10항에 있어서, 상기 저항값은 약 1×10-5Ωㆍ㎠이고, 규화단계 (라)는 약 500℃에서약 15분 내지 약 30분 동안 발생하는 것을 특징으로 하는 반도체 장치 제조방법.
  12. In 기본 3족-5조 화합물 반도체 몸체를 포함하는 반도체 장치로써, 기본적으로 단지 Pt로만 이루어진 박층을 포함하는 전기접점과, 사기 몸체를 상기 Pt층에 연결하고, 상기 몸체의 하나나 그 이상의 3족이나 5족 소자를 포함하는 Pt 화합물을 포함하는 접촉층을 구비하는 것을 특징으로 하는 반도체 장치.
  13. 제12항에 있어서, 상기 몸체는 InGaAsP를 포함하는 것을 특징으로 하는 반도체 장치.
  14. 제12항에 있어서, 상기 몸체는 InGaAs를 포함하는 것을 특징으로 하는 반도체 장치.
  15. 제12항에 있어서, 상기 층의 두께가 약 100 내지 2000Å인 것을 특징으로 하는 반도체 장치.
  16. 제12항 내지 제15항중 어느 항에 있어서, 전기 접점이 특정접촉저항은 약 2×10-5Ωㆍ㎠이하인 것을 특징으로 하는 반도체 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019850004198A 1984-06-15 1985-06-14 반도체 장치와 그 제조방법 KR860000720A (ko)

Applications Claiming Priority (2)

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US06/621,082 US4538342A (en) 1984-06-15 1984-06-15 Forming platinum contacts to in-based group III-V compound devices
US621082 1984-06-15

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Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60136788A (ja) * 1983-12-26 1985-07-20 日本ビクター株式会社 Ｌｅｄ平面パネルデイスプレイの製作法
US4855246A (en) * 1984-08-27 1989-08-08 International Business Machines Corporation Fabrication of a gaas short channel lightly doped drain mesfet
US4694311A (en) * 1985-05-22 1987-09-15 Trw Inc. Planar light-emitting diode
US4647320A (en) * 1985-05-22 1987-03-03 Trw Inc. Method of making a surface emitting light emitting diode
US5039578A (en) * 1986-06-24 1991-08-13 At&T Bell Laboratories Method for fabricating devices in III-V semiconductor substrates and devices formed thereby
JP2786063B2 (ja) * 1992-08-11 1998-08-13 日本電気株式会社 半導体光制御デバイス
US5472886A (en) * 1994-12-27 1995-12-05 At&T Corp. Structure of and method for manufacturing an LED
EP0757393A3 (en) * 1995-08-02 1999-11-03 Matsushita Electric Industrial Co., Ltd. Semiconductor light emitting element and method for fabricating the same
JP3399216B2 (ja) * 1996-03-14 2003-04-21 ソニー株式会社 半導体発光素子
US6833556B2 (en) 2002-08-12 2004-12-21 Acorn Technologies, Inc. Insulated gate field effect transistor having passivated schottky barriers to the channel
US7084423B2 (en) 2002-08-12 2006-08-01 Acorn Technologies, Inc. Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions
US7258373B2 (en) 2004-06-30 2007-08-21 Honda Motor Co., Ltd. Vehicle lock assembly
US9171883B2 (en) 2010-08-30 2015-10-27 Epistar Corporation Light emitting device
KR101898027B1 (ko) 2011-11-23 2018-09-12 아콘 테크놀로지스 인코포레이티드 계면 원자 단일층의 삽입에 의한 ⅳ족 반도체에 대한 금속 접점의 개선
US9620611B1 (en) 2016-06-17 2017-04-11 Acorn Technology, Inc. MIS contact structure with metal oxide conductor
WO2018094205A1 (en) 2016-11-18 2018-05-24 Acorn Technologies, Inc. Nanowire transistor with source and drain induced by electrical contacts with negative schottky barrier height
JP6608352B2 (ja) * 2016-12-20 2019-11-20 Ｄｏｗａエレクトロニクス株式会社 半導体発光素子およびその製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4287527A (en) * 1978-08-30 1981-09-01 Bell Telephone Laboratories, Incorporated Opto-electronic devices based on bulk crystals of complex semiconductors
US4414561A (en) * 1979-09-27 1983-11-08 Bell Telephone Laboratories, Incorporated Beryllium-gold ohmic contact to a semiconductor device
US4359485A (en) * 1981-05-01 1982-11-16 Bell Telephone Laboratories, Incorporated Radiation induced deposition of metal on semiconductor surfaces

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JPS6112070A (ja) 1986-01-20
US4538342A (en) 1985-09-03

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