KR970030899A - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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KR970030899A
KR970030899A KR1019960052061A KR19960052061A KR970030899A KR 970030899 A KR970030899 A KR 970030899A KR 1019960052061 A KR1019960052061 A KR 1019960052061A KR 19960052061 A KR19960052061 A KR 19960052061A KR 970030899 A KR970030899 A KR 970030899A
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layer
channel layer
electron supply
electron affinity
electron
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요시쯔구 야마모토
노리오 하야후지
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기다오까 다까시
미쓰비시 뎅끼 가부시끼가이샤
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Publication of KR970030899A publication Critical patent/KR970030899A/ko

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Abstract

반도체 장치는 InP기판과; 캐리어인 전자가 주행하는 채널층과; 채널층에 공급하는 Alx1Ga1-x1Asy1Pz1Sb1-y1-z1(0≤x1≤1, 0≤y1≤1, 0≤z1≤1) 전자공급층을 포함한다.
상기 전자공급층은 상기 채널층보다 작은 전자 친화력을 가지며, n형 불순물로 도핑되어 있다.
n형 AlGaAsPSb는 열적으로 안전하기 때문에, 그것의 전기적 특성은 350℃ 정도의 열처리에 의해서 변화되지 않아, 열적으로 안정되고, 제조공정중에 있더라도, 또한 동작중에 있더라도, 그 특성이 시간의 경과에 따라 거의 변화하지 않는 높은 신뢰성을 가지는 HEMT를 실현할 수 있다.
또한, 원하는 밴드구조를 가지는 전자공급층과 채널층으로 이루어지는 헤테로 구조를 높은 자유도를 기초로, 용이하게 형성할 수 있어, 디바이스설계의 자유도를 비약적으로 확대시킬 수 있다.

Description

반도체 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 실시예1에 의한 반도체 장치(HEMT)를 나타낸 단면도.

Claims (3)

  1. 반도체 기판과; 반도체 기판상에 배치된 AlxGa1-xAsyPzSb1-y-z(0≤x≤1, 0≤y≤1, 0≤z≤1)층을 구비한 것을 특징으로 하는 반도체 장치.
  2. 격자정수를 가지는 InP기판과; 전자 친화력을 가지며, 캐리어인 전자가 주행하는 채널층과; 상기 채널층에 전자를 공급하는 Alx1Ga1-x1Asy1Pz1Sb1-y1-z1(0≤x1≤1, 0≤y1≤1, 0≤z1≤1) 전자공급층을 구비하고, 상기 전자공급층은 상기 채널층의 전자 친화력보다 작은 전자 친화력을 가지며, n형 불순물로 도핑되어 있는 것을 특징으로 하는 반도체 장치.
  3. 레이저광을 발진하고, 에너지밴드갭을 가지는 활성층과; 이 활성층의 에너지밴드갭보다 에너지밴드갭이 큰 제1도전형의 Alx5Ga1-x5Asy5Pz5Sb1-y5-z5(0≤x5≤1, 0≤y5≤1, 0≤z5≤1) 하부클래드층과, 이 활성층의 에너지밴드갭보다 에너지밴드갭이 큰 상기 제1도전형과는 반대의 제2도전형의 Alx6Ga1-x6Asy6Pz6Sb1-y6-z6(0≤x6≤1, 0≤y6≤1, 0≤z6≤1) 상부클래드층을 구비하고, 상기 상하부클래드층의 사이에 활성층을 삽입하는 것을 특징으로 하는 반도체 레이저 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960052061A 1995-11-06 1996-11-05 반도체 장치 KR970030899A (ko)

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JP7287273A JPH09129865A (ja) 1995-11-06 1995-11-06 半導体装置
JP95-287273 1995-11-06

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JPH0654786B2 (ja) * 1984-12-27 1994-07-20 住友電気工業株式会社 ヘテロ接合半導体デバイス
JPH025438A (ja) * 1988-06-22 1990-01-10 Fujitsu Ltd 絶縁ゲート型電界効果トランジスタ
JPH0388340A (ja) * 1989-08-31 1991-04-12 Fujitsu Ltd 高電子移動度トランジスタ
EP0531550B1 (en) * 1991-03-28 1997-12-29 Asahi Kasei Kogyo Kabushiki Kaisha Field effect transistor
US5663583A (en) * 1995-06-06 1997-09-02 Hughes Aircraft Company Low-noise and power ALGaPSb/GaInAs HEMTs and pseudomorpohic HEMTs on GaAs substrate

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Publication number Publication date
TW310479B (ko) 1997-07-11
JPH09129865A (ja) 1997-05-16
EP0772243A1 (en) 1997-05-07
US5729030A (en) 1998-03-17

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